Patents by Inventor Ikuhiro Yamamura
Ikuhiro Yamamura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240128286Abstract: A solid-state image pickup device includes a plurality of pixels, a pixel connection section, and a pixel reset section. The plurality of pixels each include a photoelectric conversion section that generates a charge according to irradiated light, a charge holding section that holds the generated charge, and a signal generation section that generates as an image signal a signal according to the held charge. The pixel connection section conducts between charge holding sections of the plurality of pixels and thereby allows each of the charge holding sections of the plurality of pixels to hold the charge that has been generated by the photoelectric conversion section of one pixel of the plurality of pixels. The pixel reset section discharges and resets the charge of the respective charge holding sections of the plurality of pixels when the pixel connection section conducts between the respective charge holding sections of the plurality of pixels.Type: ApplicationFiled: December 21, 2023Publication date: April 18, 2024Applicant: SONY GROUP CORPORATIONInventors: Takashi ABE, Ikuhiro YAMAMURA
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Patent number: 11916089Abstract: A solid-state image pickup device includes a plurality of pixels, a pixel connection section, and a pixel reset section. The plurality of pixels each include a photoelectric conversion section that generates a charge according to irradiated light, a charge holding section that holds the generated charge, and a signal generation section that generates as an image signal a signal according to the held charge. The pixel connection section conducts between charge holding sections of the plurality of pixels and thereby allows each of the charge holding sections of the plurality of pixels to hold the charge that has been generated by the photoelectric conversion section of one pixel of the plurality of pixels. The pixel reset section discharges and resets the charge of the respective charge holding sections of the plurality of pixels when the pixel connection section conducts between the respective charge holding sections of the plurality of pixels.Type: GrantFiled: September 23, 2021Date of Patent: February 27, 2024Assignee: SONY GROUP CORPORATIONInventors: Takashi Abe, Ikuhiro Yamamura
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Publication number: 20220102452Abstract: A display apparatus includes: a first semiconductor substrate that includes a light emitting unit and a first drive circuit, the first drive circuit driving the light emitting unit; and a second semiconductor substrate that includes a second drive circuit to be electrically connected to the first drive circuit, the second semiconductor substrate being bonded to the first semiconductor substrate.Type: ApplicationFiled: September 18, 2019Publication date: March 31, 2022Inventor: Ikuhiro Yamamura
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Publication number: 20220013558Abstract: A solid-state image pickup device includes a plurality of pixels, a pixel connection section, and a pixel reset section. The plurality of pixels each include a photoelectric conversion section that generates a charge according to irradiated light, a charge holding section that holds the generated charge, and a signal generation section that generates as an image signal a signal according to the held charge. The pixel connection section conducts between charge holding sections of the plurality of pixels and thereby allows each of the charge holding sections of the plurality of pixels to hold the charge that has been generated by the photoelectric conversion section of one pixel of the plurality of pixels. The pixel reset section discharges and resets the charge of the respective charge holding sections of the plurality of pixels when the pixel connection section conducts between the respective charge holding sections of the plurality of pixels.Type: ApplicationFiled: September 23, 2021Publication date: January 13, 2022Applicant: SONY GROUP CORPORATIONInventors: Takashi ABE, Ikuhiro YAMAMURA
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Patent number: 11152405Abstract: A solid-state image pickup device includes a plurality of pixels, a pixel connection section, and a pixel reset section. The plurality of pixels each include a photoelectric conversion section that generates a charge according to irradiated light, a charge holding section that holds the generated charge, and a signal generation section that generates as an image signal a signal according to the held charge. The pixel connection section conducts between charge holding sections of the plurality of pixels and thereby allows each of the charge holding sections of the plurality of pixels to hold the charge that has been generated by the photoelectric conversion section of one pixel of the plurality of pixels. The pixel reset section discharges and resets the charge of the respective charge holding sections of the plurality of pixels when the pixel connection section conducts between the respective charge holding sections of the plurality of pixels.Type: GrantFiled: April 3, 2017Date of Patent: October 19, 2021Assignee: SONY CORPORATIONInventors: Takashi Abe, Ikuhiro Yamamura
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Publication number: 20210217787Abstract: The present disclosure relates to an imaging device and an electronic device that make it possible to obtain a better pixel signal. A photoelectric conversion part that converts received light into a charge, and a holding part that holds a charge transferred from the photoelectric conversion part are provided, the photoelectric conversion part and the holding part are formed in a semiconductor substrate having a predetermined thickness, and the holding part is formed with a thickness that is half or less of the predetermined thickness. A charge capturing region that captures a charge is further provided on a light incident side of a region where the holding part is formed. A light shielding part that shields light is formed between the photoelectric conversion part and the charge capturing region. The present technology is applicable to an imaging device.Type: ApplicationFiled: March 30, 2021Publication date: July 15, 2021Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Yoshimichi KUMAGAI, Takashi ABE, Ryoto YOSHITA, Ikuhiro YAMAMURA
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Patent number: 10991734Abstract: The present disclosure relates to an imaging device and an electronic device that make it possible to obtain a better pixel signal. A photoelectric conversion part that converts received light into a charge, and a holding part that holds a charge transferred from the photoelectric conversion part are provided, the photoelectric conversion part and the holding part are formed in a semiconductor substrate having a predetermined thickness, and the holding part is formed with a thickness that is half or less of the predetermined thickness. A charge capturing region that captures a charge is further provided on a light incident side of a region where the holding part is formed. A light shielding part that shields light is formed between the photoelectric conversion part and the charge capturing region. The present technology is applicable to an imaging device.Type: GrantFiled: March 9, 2018Date of Patent: April 27, 2021Assignee: Sony Semiconductor Solutions CorporationInventors: Yoshimichi Kumagai, Takashi Abe, Ryoto Yoshita, Ikuhiro Yamamura
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Publication number: 20200013808Abstract: The present disclosure relates to an imaging device and an electronic device that make it possible to obtain a better pixel signal. A photoelectric conversion part that converts received light into a charge, and a holding part that holds a charge transferred from the photoelectric conversion part are provided, the photoelectric conversion part and the holding part are formed in a semiconductor substrate having a predetermined thickness, and the holding part is formed with a thickness that is half or less of the predetermined thickness. A charge capturing region that captures a charge is further provided on a light incident side of a region where the holding part is formed. A light shielding part that shields light is formed between the photoelectric conversion part and the charge capturing region. The present technology is applicable to an imaging device.Type: ApplicationFiled: March 9, 2018Publication date: January 9, 2020Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Yoshimichi KUMAGAI, Takashi ABE, Ryoto YOSHITA, Ikuhiro YAMAMURA
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Publication number: 20190280029Abstract: A solid-state image pickup device includes a plurality of pixels, a pixel connection section, and a pixel reset section. The plurality of pixels each include a photoelectric conversion section that generates a charge according to irradiated light, a charge holding section that holds the generated charge, and a signal generation section that generates as an image signal a signal according to the held charge. The pixel connection section conducts between charge holding sections of the plurality of pixels and thereby allows each of the charge holding sections of the plurality of pixels to hold the charge that has been generated by the photoelectric conversion section of one pixel of the plurality of pixels. The pixel reset section discharges and resets the charge of the respective charge holding sections of the plurality of pixels when the pixel connection section conducts between the respective charge holding sections of the plurality of pixels.Type: ApplicationFiled: April 3, 2017Publication date: September 12, 2019Applicant: SONY CORPORATIONInventors: Takashi ABE, Ikuhiro YAMAMURA
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Patent number: 9450003Abstract: A solid-state imaging device including a photoelectric conversion element operable to generate electric charge according to the amount of incident light and to accumulate the electric charge in the inside thereof, an electric-charge holding region in which the electric charge generated through photoelectric conversion by the photoelectric conversion element is held until read out, and a transfer gate having a complete transfer path through which the electric charge accumulated in the photoelectric conversion element is completely transferred into the electric-charge holding region, and an intermediate transfer path through which the electric charge generated by the photoelectric conversion element during an exposure period and being in excess of a predetermined charge amount is transferred into the electric-charge holding region. The complete transfer path and the intermediate transfer path are formed in different regions.Type: GrantFiled: January 30, 2015Date of Patent: September 20, 2016Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Yusuke Oike, Takahiro Kawamura, Shinya Yamakawa, Ikuhiro Yamamura, Takashi Machida, Yasunori Sogoh, Naoki Saka
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Patent number: 9060145Abstract: Disclosed herein is a solid-state image taking apparatus, includes: a pixel array section including unit pixels laid out two-dimensionally to form a matrix to serve as unit pixels each employing an opto-electric conversion device, a transfer transistor, a first electric-charge accumulation section, a read transistor, a second electric-charge accumulation section, a reset transistor, and an amplification transistor; a driving section; and a correction section.Type: GrantFiled: February 22, 2011Date of Patent: June 16, 2015Assignee: Sony CorporationInventors: Akihiko Kato, Tadayuki Taura, Ikuhiro Yamamura, Shinichi Yoshimura, Yusuke Oike
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Publication number: 20150137188Abstract: A solid-state imaging device including a photoelectric conversion element operable to generate electric charge according to the amount of incident light and to accumulate the electric charge in the inside thereof, an electric-charge holding region in which the electric charge generated through photoelectric conversion by the photoelectric conversion element is held until read out, and a transfer gate having a complete transfer path through which the electric charge accumulated in the photoelectric conversion element is completely transferred into the electric-charge holding region, and an intermediate transfer path through which the electric charge generated by the photoelectric conversion element during an exposure period and being in excess of a predetermined charge amount is transferred into the electric-charge holding region. The complete transfer path and the intermediate transfer path are formed in different regions.Type: ApplicationFiled: January 30, 2015Publication date: May 21, 2015Inventors: Yusuke Oike, Takahiro Kawamura, Shinya Yamakawa, Ikuhiro Yamamura, Takashi Machida, Yasunori Sogoh, Naoki Saka
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Patent number: 8952432Abstract: Disclosed herein is a solid-state imaging device including a photoelectric conversion element operable to generate electric charge according to the amount of incident light and to accumulate the electric charge in the inside thereof, an electric-charge holding region in which the electric charge generated through photoelectric conversion by the photoelectric conversion element is held until read out, and a transfer gate having a complete transfer path through which the electric charge accumulated in the photoelectric conversion element is completely transferred into the electric-charge holding region, and an intermediate transfer path through which the electric charge generated by the photoelectric conversion element during an exposure period and being in excess of a predetermined charge amount is transferred into the electric-charge holding region. The complete transfer path and the intermediate transfer path are formed in different regions.Type: GrantFiled: March 17, 2011Date of Patent: February 10, 2015Assignee: Sony CorporationInventors: Yusuke Oike, Takahiro Kawamura, Shinya Yamakawa, Ikuhiro Yamamura, Takashi Machida, Yasunori Sogoh, Naoki Saka
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Patent number: 8519456Abstract: A solid-state image pickup device in which electric charges accumulated in a photodiode conversion element are transferred to a second diffusion layer through a first diffusion layer.Type: GrantFiled: September 28, 2010Date of Patent: August 27, 2013Assignee: Sony CorporationInventors: Atsushi Masagaki, Ikuhiro Yamamura
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Patent number: 8211740Abstract: To arrange diffusion-inhibitory films 5a, 5b, and 5c for inhibiting the diffusion of a wiring material absent in a region on or above a light receiving unit 2, the diffusion-inhibitory films 5a, 5b, and 5c formed on a region above the light receiving unit 2 are selectively removed. Alternatively, the diffusion-inhibitory films are arranged only on top surfaces of wirings 4a, 4b, and 4c, and only a passivation film 12 and interlayer insulating films 3a, 3b, and 3c are arranged in the region on or above the light receiving unit 2. Thus, with less interface between different insulation films and less reflection of incident light in an incident region, the incident light 13 highly efficiently passes through these insulating films and comes into the light receiving unit 2. The light receiving unit 2 can thereby receive a sufficient quantity of the incident light 13.Type: GrantFiled: February 9, 2010Date of Patent: July 3, 2012Assignee: Sony CorporationInventor: Ikuhiro Yamamura
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Publication number: 20120154656Abstract: A solid-state imaging element is disclosed which includes: a pixel array portion configured to have a plurality of unit pixels arrayed two-dimensionally, the unit pixels being furnished with a photoelectric conversion portion, a transfer section, and a reset section, the transfer section being configured to transfer electrical charges accumulated in the photoelectric conversion portion to a charge retention portion, the reset section being configured to reset the electrical charges of the charge retention portion; and a drive control section configured to control the driving of the unit pixels; wherein the drive control section controls the driving of the unit pixels in such a manner that prior to the charge transfer by the transfer section, the reset section resets the electrical charges of the charge retention portion in increments of a plurality of rows of the unit pixels, the plurality of rows being not adjacent to one another.Type: ApplicationFiled: December 6, 2011Publication date: June 21, 2012Applicant: SONY CORPORATIONInventors: Yusuke OIKE, Takafumi TAKATSUKA, Ikuhiro YAMAMURA
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Publication number: 20110241079Abstract: Disclosed herein is a solid-state imaging device including a photoelectric conversion element operable to generate electric charge according to the amount of incident light and to accumulate the electric charge in the inside thereof, an electric-charge holding region in which the electric charge generated through photoelectric conversion by the photoelectric conversion element is held until read out, and a transfer gate having a complete transfer path through which the electric charge accumulated in the photoelectric conversion element is completely transferred into the electric-charge holding region, and an intermediate transfer path through which the electric charge generated by the photoelectric conversion element during an exposure period and being in excess of a predetermined charge amount is transferred into the electric-charge holding region. The complete transfer path and the intermediate transfer path are formed in different regions.Type: ApplicationFiled: March 17, 2011Publication date: October 6, 2011Applicant: SONY CORPORATIONInventors: Yusuke Oike, Takahiro Kawamura, Shinya Yamakawa, Ikuhiro Yamamura, Takashi Machida, Yasunori Sogoh, Naoki Saka
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Publication number: 20110221940Abstract: Disclosed herein is a solid-state image taking apparatus, includes: a pixel array section including unit pixels laid out two-dimensionally to form a matrix to serve as unit pixels each employing an opto-electric conversion device, a transfer transistor, a first electric-charge accumulation section, a read transistor, a second electric-charge accumulation section, a reset transistor, and an amplification transistor; a driving section; and a correction section.Type: ApplicationFiled: February 22, 2011Publication date: September 15, 2011Applicant: Sony CorporationInventors: Akihiko Kato, Tadayuki Taura, Ikuhiro Yamamura, Shinichi Yoshimura, Yusuke Oike
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Publication number: 20110079832Abstract: A solid-state image pickup device includes: a semiconductor substrate; and a plurality of pixel circuits formed on the semiconductor substrate; each of the plurality of pixel circuits formed on the semiconductor substrate including a photoelectric conversion element, a first buried gate electrode formed adjacent to the photoelectric conversion element, a second buried gate electrode formed away from each of the photoelectric conversion element and the first buried gate electrode, a first diffusion layer formed between the first buried gate electrode and the second buried gate electrode, and a second diffusion layer formed between the first buried gate electrode and the second buried gate electrode away from the first diffusion layer so as to overlap the first diffusion layer; wherein electric charges accumulated in the photodiode conversion element are transferred to the second diffusion layer through the first diffusion layer.Type: ApplicationFiled: September 28, 2010Publication date: April 7, 2011Applicant: SONY CORPORATIONInventors: Atsushi Masagaki, Ikuhiro Yamamura
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Patent number: 7759712Abstract: To arrange diffusion-inhibitory films 5a, 5b, and 5c for inhibiting the diffusion of a wiring material absent in a region on or above a light receiving unit 2, the diffusion-inhibitory films 5a, 5b, and 5c formed on a region above the light receiving unit 2 are selectively removed. Alternatively, the diffusion-inhibitory films are arranged only on top surfaces of wirings 4a, 4b, and 4c, and only a passivation film 12 and interlayer insulating films 3a, 3b, and 3c are arranged in the region on or above the light receiving unit 2. Thus, with less interface between different insulation films and less reflection of incident light in an incident region, the incident light 13 highly efficiently passes through these insulating films and comes into the light receiving unit 2. The light receiving unit 2 can thereby receive a sufficient quantity of the incident light 13.Type: GrantFiled: November 30, 2006Date of Patent: July 20, 2010Assignee: Sony CorporationInventor: Ikuhiro Yamamura