Patents by Inventor Ikuo Fujiwara
Ikuo Fujiwara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20200301129Abstract: According to an embodiment, a semiconductor device includes a first actuator, a second actuator, a first frame provided between the first actuator and the second actuator, a first connection member connecting the first actuator and the first frame to each other, a second connection member connecting the first actuator and the first frame to each other at a position different from a position at which the first connection member connects the first actuator and the first frame to each other, a third connection member connecting the second actuator and the first frame to each other, a fourth connection member connecting the second actuator and the first frame to each other at a position different from a position at which the third connection member connects the second actuator and the first frame to each other.Type: ApplicationFiled: August 27, 2019Publication date: September 24, 2020Applicant: Kabushiki Kaisha ToshibaInventors: Honam KWON, Koichi Ishii, Ikuo Fujiwara, Kazuhiro Suzuki
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Publication number: 20200295217Abstract: A photodetector according to the present embodiment includes a plurality of light detectors. Each light detector has a first semiconductor layer of a first conductive type and a second semiconductor layer of a second conductive type different from the first conductive type, in which the first semiconductor layer and the second semiconductor layer constitute a PN junction. The photodetector further includes a quench resistor that is optically transmissive and connected to the second semiconductor layer.Type: ApplicationFiled: August 28, 2019Publication date: September 17, 2020Applicant: Kabushiki Kaisha ToshibaInventors: Masaki ATSUTA, Kazuhiro SUZUKI, Ikuo FUJIWARA, Honam KWON, Keita SASAKI, Yuki NOBUSA
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Publication number: 20200256778Abstract: The molecule detecting apparatus of an embodiment includes a light source 31, a fluorescent layer 42 emitting different fluorescence depending on the kind of a target molecule 60 captured when being irradiated with light from the light source 31, a photodetector 32 configured to detect fluorescence, and the photodetector 32 is an array of avalanche photodiodes operating in Geiger mode.Type: ApplicationFiled: August 30, 2019Publication date: August 13, 2020Applicant: Kabushiki Kaisha ToshibaInventors: Honam KWON, Ikuo FUJIWARA, Kazuhiro SUZUKI, Keita SASAKI, Yuki NOBUSA, Yasushi SHINJO
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Publication number: 20200091360Abstract: In one embodiment, a photo detection element includes a first region of a first conductivity type, a second region of a second conductivity type, a third region of the first conductivity type provided between the second region and the first region, and a plurality of structure bodies of the first conductivity type which are provided between the first region and the third region separately in a second direction crossing with a first direction from the third region toward the second region.Type: ApplicationFiled: March 6, 2019Publication date: March 19, 2020Applicant: Kabushiki Kaisha ToshibaInventors: Yuki NOBUSA, Ikuo FUJIWARA, Kazuhiro SUZUKI
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Publication number: 20200088852Abstract: In one embodiment, a photo detection element includes a first region of a first conductivity type, a second region of a second conductivity type, a third region of the first conductivity type provided between the first region and the second region, a fourth region of the second conductivity type provided so as to surround a periphery of the second region, in a direction crossing with a direction from the first region toward the second region, and a fifth region of the first conductivity type provided between the first region and the fourth region.Type: ApplicationFiled: March 7, 2019Publication date: March 19, 2020Applicant: Kabushiki Kaisha ToshibaInventors: Ikuo FUJIWARA, Yuki NOBUSA, Honam KWON, Keita SASAKI, Kazuhiro SUZUKI
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Publication number: 20200025934Abstract: In one embodiment, a photo detector includes a plurality of photo detection elements, a plurality of trenches each provided among a plurality of the photo detection elements, and a wiring provided between the two photo detection elements out of the plurality of photo detection elements to electrically connect to the two photo detection elements. The trenches surround the 2·m (m is a positive integer) photo detection elements including the two photo detection elements. And the two photo detection elements are lined in a direction orthogonal to an extending direction of the metal layer for electrical connection.Type: ApplicationFiled: February 28, 2019Publication date: January 23, 2020Applicant: Kabushiki Kaisha ToshibaInventors: Honam KWON, Kazuhiro SUZUKI, Ikuo FUJIWARA, Keita SASAKI, Yuki NOBUSA
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Patent number: 10401218Abstract: An photodetection device according to an embodiment includes: a pixel including at least one cell, the at least one cell including an avalanche photodiode and a resistor connected in series to the avalanche photodiode; a voltage source configured to apply voltage to the cell of the pixel; and a temperature detecting circuit including a temperature detecting element configured to detect a temperature of the pixel, wherein the temperature detecting element includes: a photodiode having the same structure as the avalanche photodiode; and a light shielding structure disposed on an upper surface of the photodiode.Type: GrantFiled: September 13, 2017Date of Patent: September 3, 2019Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Ikuo Fujiwara, Yuki Nobusa, Honam Kwon, Kazuhiro Suzuki
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Publication number: 20190165198Abstract: A photodetector includes a first semiconductor layer and a second semiconductor layer provided on the first semiconductor layer and detecting light. The first semiconductor layer has a cavity portion for reflecting incident light.Type: ApplicationFiled: February 1, 2019Publication date: May 30, 2019Applicant: Kabushiki Kaisha ToshibaInventors: Honam KWON, Toshiya YONEHARA, Hitoshi YAGI, Ikuo FUJIWARA, Kazuhiro SUZUKI
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Patent number: 10263128Abstract: A photodetector includes a structure that converts ultraviolet light into visible light; and a photodetection element that detects the visible light converted by the structure, wherein the structure is provided on the photodetection element and protrudes in a predetermined shape on a side opposite to the photodetection element.Type: GrantFiled: February 26, 2018Date of Patent: April 16, 2019Assignee: Kabushiki Kaisha ToshibaInventors: Honam Kwon, Ikuo Fujiwara, Keita Sasaki, Yuki Nobusa, Kazuhiro Suzuki
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Publication number: 20190088691Abstract: A photodetector includes a first cell converting incident light into electric charges; and a second cell converting incident light into electric charges; wherein the first cell includes a first semiconductor layer and a second semiconductor layer provided to be closer to a light incident side than the first semiconductor layer, wherein the second cell includes a third semiconductor layer and a fourth semiconductor layer provided to be closer to a light incident side than the third semiconductor layer, wherein a first interface between the third semiconductor layer and the fourth semiconductor layer is located to be closer to the light incident side than a second interface between the first semiconductor layer and the second semiconductor layer.Type: ApplicationFiled: March 6, 2018Publication date: March 21, 2019Applicant: Kabushiki Kaisha ToshibaInventors: Yuki NOBUSA, Ikuo Fujiwara, Kazuhiro Suzuki
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Publication number: 20190074388Abstract: A photodetector includes a structure that converts ultraviolet light into visible light; and a photodetection element that detects the visible light converted by the structure, wherein the structure is provided on the photodetection element and protrudes in a predetermined shape on a side opposite to the photodetection element.Type: ApplicationFiled: February 26, 2018Publication date: March 7, 2019Applicant: Kabushiki Kaisha ToshibaInventors: Honam KWON, Ikuo Fujiwara, Keita Sasaki, Yuki Nobusa, Kazuhiro Suzuki
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Publication number: 20180266881Abstract: An photodetection device according to an embodiment includes: a pixel including at least one cell, the at least one cell including an avalanche photodiode and a resistor connected in series to the avalanche photodiode; a voltage source configured to apply voltage to the cell of the pixel; and a temperature detecting circuit including a temperature detecting element configured to detect a temperature of the pixel, wherein the temperature detecting element includes: a photodiode having the same structure as the avalanche photodiode; and a light shielding structure disposed on an upper surface of the photodiode.Type: ApplicationFiled: September 13, 2017Publication date: September 20, 2018Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Ikuo FUJIWARA, Yuki Nobusa, Honam Kwon, Kazuhiro Suzuki
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Patent number: 9667893Abstract: According to an embodiment, a noise removing device includes a first difference detector and a second difference detector. The first difference detector detects a difference between a first reset signal at a first timing and a second reset signal at a second timing after a predetermined period of time has elapsed from the first timing. The second difference detector subtracts the difference detected by the first difference detector from a main signal between the first reset signal and the second reset signal, and outputs a subtraction result.Type: GrantFiled: November 3, 2014Date of Patent: May 30, 2017Assignee: Kabushiki Kaisha ToshibaInventors: Shunsuke Kimura, Hideyuki Funaki, Ikuo Fujiwara
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Patent number: 9331125Abstract: According to one embodiment, a solid-state imaging device includes: a first inorganic photoelectric converter; a semiconductor substrate that includes a light-receiving face to which light is to be incident and a circuit-formed surface on which a circuit including a readout circuit is formed, the light-receiving face facing the first inorganic photoelectric converter, the semiconductor substrate including a second inorganic photoelectric converter thereinside; and a first part including a microstructure arranged between the first inorganic photoelectric converter and the second inorganic photoelectric converter.Type: GrantFiled: November 28, 2014Date of Patent: May 3, 2016Assignee: Kabushiki Kaisha ToshibaInventors: Takashi Miyazaki, Ikuo Fujiwara, Hideyuki Funaki
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Patent number: 9177989Abstract: A solid state imaging device according to an embodiment includes a photo detector arranged two-dimensionally in a semiconductor substrate, a readout circuit provided in the semiconductor substrate, a first photoelectric conversion layer provided above the photo detector, a plurality of first metal dots provided above the first photoelectric conversion layer, a second photoelectric conversion layer provided above the first metal dots, and a plurality of second metal dots provided above the second photoelectric conversion layer.Type: GrantFiled: March 13, 2013Date of Patent: November 3, 2015Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Ikuo Fujiwara, Hideyuki Funaki, Kenji Todori, Akira Fujimoto, Tsutomu Nakanishi, Kenji Nakamura
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Publication number: 20150270314Abstract: According to one embodiment, a solid-state imaging device includes: a first inorganic photoelectric converter; a semiconductor substrate that includes a light-receiving face to which light is to be incident and a circuit-formed surface on which a circuit including a readout circuit is formed, the light-receiving face facing the first inorganic photoelectric converter, the semiconductor substrate including a second inorganic photoelectric converter thereinside; and a first part including a microstructure arranged between the first inorganic photoelectric converter and the second inorganic photoelectric converter.Type: ApplicationFiled: November 28, 2014Publication date: September 24, 2015Applicant: Kabushiki Kaisha ToshibaInventors: Takashi MIYAZAKI, Ikuo FUJIWARA, Hideyuki FUNAKI
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Publication number: 20150136952Abstract: According to an embodiment, a noise removing device includes a first difference detector and a second difference detector. The first difference detector detects a difference between a first reset signal at a first timing and a second reset signal at a second timing after a predetermined period of time has elapsed from the first timing. The second difference detector subtracts the difference detected by the first difference detector from a main signal between the first reset signal and the second reset signal, and outputs a subtraction result.Type: ApplicationFiled: November 3, 2014Publication date: May 21, 2015Applicant: Kabushiki Kaisha ToshibaInventors: Shunsuke KIMURA, Hideyuki FUNAKI, Ikuo FUJIWARA
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Publication number: 20140284593Abstract: According to one embodiment, a semiconductor device includes a substrate having an upper surface, a foundation insulating layer provided on the upper surface, and a thin film transistor. The thin film transistor includes a first gate electrode, first, second and third insulating layers, a semiconductor layer, and first and second conductive layers. The first gate electrode is provided on a portion of the foundation insulating layer. The first insulating layer covers the first gate electrode and the foundation insulating layer. The second insulating layer is provided on the first insulating layer, and has first, second and third portions. The semiconductor layer contacts the second insulating layer on the third portion, and has fourth, fifth portions and sixth portions. The first conductive layer contacts the fourth portion. The second conductive layer contacts the fifth portion. The third insulating layer covers a portion of the semiconductor layer.Type: ApplicationFiled: February 5, 2014Publication date: September 25, 2014Applicant: Kabushiki Kaisha ToshibaInventors: Shintaro Nakano, Tomomasa Ueda, Ikuo Fujiwara, Hajime Yamaguchi
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Publication number: 20140285671Abstract: An infrared imaging module according to an embodiment includes: an infrared imaging element including a semiconductor substrate having a recessed portion, and a pixel portion formed on the recessed portion, the pixel portion converting infrared rays to electrical signals; and a lid including a lens portion facing the pixel portion, and a flat plate portion surrounding the lens portion, the flat plate portion being bonded to the semiconductor substrate.Type: ApplicationFiled: March 11, 2014Publication date: September 25, 2014Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Koichi ISHII, Hideyuki FUNAKI, Ikuo FUJIWARA, Hiroto HONDA
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Publication number: 20140285691Abstract: A solid state imaging device according to an embodiment includes: a pixel array including a plurality of pixel blocks on a first surface of a semiconductor substrate, each pixel block having a first to third pixels each having a photoelectric conversion element, the first pixel having a first filter with a higher transmission to a light in a first wavelength range, the second pixel having a second filter with a higher transmission to a light in a second wavelength range having a complementary color to a color of the light in the first wavelength range, and the third pixel having a third filter transmitting lights in a wavelength range including the first and second wavelength ranges; a readout circuit reading signal charges from the first to the third pixels; and a signal processing circuit processing the signal charges.Type: ApplicationFiled: March 12, 2014Publication date: September 25, 2014Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Hiroto HONDA, Yoshitaka EGAWA, Ikuo FUJIWARA