Abstract: A pulse position modulation circuit includes a delay path that includes a plurality of delay devices coupled in series with each other, a clock being passed through the plurality of delay devices, and a switching circuit that changes a time by which the clock is delayed in each of the plurality of delay devices according to input data.

Abstract: A power amplifier includes a main amplifier, an auxiliary amplifier, and a control circuit. The main amplifier is configured to amplify input power, and the auxiliary amplifier is configured to amplify the input power when the input power exceeds a certain level. The control circuit, which is provided between a source of the main amplifier and a ground, is configured to control a source potential of the main amplifier so as to increase the source potential when the input power reaches at least a certain value.

Abstract: A detector circuit includes a first inverter including an input node coupled via a first capacitor to a transmission path for transmitting an AC signal, the first inverter outputting an output voltage in accordance with power of the AC signal, wherein the output voltage increases with increasing temperature, a second inverter including an input node coupled to the transmission path, the second inverter outputting an output voltage in accordance with power of the AC signal, wherein the output voltage decreases with increasing temperature, a third capacitor including one electrode coupled to either an output electrode of the first inverter or an output node of the second inverter, a first resistor coupled between the output node of the first inverter and an output node of the detector circuit, and a second resistor coupled between the output node of the second inverter and the output node of the detector circuit.

Abstract: A phase shifter includes a first variable amplifier circuit configured to receive and amplify a first signal having a first phase; and a second variable amplifier circuit configured to receive and amplify a second signal having a second phase different from the first phase. The phase shifter is configured to generate an output signal having a desired phase by phase combination of an output of the first variable amplifier circuit and an output of the second variable amplifier circuit, and the first variable amplifier circuit and the second variable amplifier circuit each includes a plurality of amplifier circuit units. The amplifier circuit unit includes a first transistor with a grounded gate and a second transistor with a grounded source, and gains of the first variable amplifier circuit and the second variable amplifier circuit are specified according to the number of amplifier circuit units to be activated.

Abstract: A gas sensor including a first layer including copper (I) bromide, and a second layer, which is disposed on the first layer, and is a p-type semiconductor that is different from the copper (I) bromide, wherein one of the first layer and the second layer is more preferentially in contact with detection-target gas than the other.

Abstract: A phase shifter includes a first variable amplifier circuit configured to receive and amplify a first signal having a first phase; and a second variable amplifier circuit configured to receive and amplify a second signal having a second phase different from the first phase. The phase shifter is configured to generate an output signal having a desired phase by phase combination of an output of the first variable amplifier circuit and an output of the second variable amplifier circuit, and the first variable amplifier circuit and the second variable amplifier circuit each includes a plurality of amplifier circuit units. The amplifier circuit unit includes a first transistor with a grounded gate and a second transistor with a grounded source, and gains of the first variable amplifier circuit and the second variable amplifier circuit are specified according to the number of amplifier circuit units to be activated.

Abstract: A power amplifier includes a main amplifier, an auxiliary amplifier, and a control circuit. The main amplifier is configured to amplify input power, and the auxiliary amplifier is configured to amplify the input power when the input power exceeds a certain level. The control circuit, which is provided between a source of the main amplifier and a ground, is configured to control a source potential of the main amplifier so as to increase the source potential when the input power reaches at least a certain value.

Abstract: A gas sensor includes a p-type semiconductor layer that contains a compound of copper or silver and contacts with detection target gas, a first electrode that is a Schottky electrode to the p-type semiconductor layer, a high-resistance layer that is provided between the p-type semiconductor layer and the first electrode and has resistance higher than that of each of the p-type semiconductor layer and the first electrode, and a second electrode that is an ohmic electrode to the p-type semiconductor layer.

Abstract: A phase shift circuitry includes: a signal generation circuitry that receives an input signal, and outputs four signals different in phase from each other by 90 degrees based on the input signal, the four signals includes a first signal and a second signal; four variable amplifier circuitry that each includes a transistor, and amplify the four signals individually, with amplification factors based on control voltages supplied to gates of the transistors, the four variable amplifier circuitry include a first amplifier amplifies the first signal by a first control voltage and a second amplifier amplifies the second signal by a second control voltage; a synthetic circuitry that synthesizes output signals of the four variable amplifier circuitry, and outputs a synthesized signal; and a control circuitry supplies voltages, that are equal to or higher than the gate threshold value, to the first amplifier and the second amplifier.

Abstract: A phase shift circuitry includes: a signal generation circuitry that receives an input signal, and outputs four signals different in phase from each other by 90 degrees based on the input signal, the four signals includes a first signal and a second signal; four variable amplifier circuitry that each includes a transistor, and amplify the four signals individually, with amplification factors based on control voltages supplied to gates of the transistors, the four variable amplifier circuitry include a first amplifier amplifies the first signal by a first control voltage and a second amplifier amplifies the second signal by a second control voltage; a synthetic circuitry that synthesizes output signals of the four variable amplifier circuitry, and outputs a synthesized signal; and a control circuitry supplies voltages, that are equal to or higher than the gate threshold value, to the first amplifier and the second amplifier.

Abstract: An electronic device includes: a substrate; a first all-solid-state secondary cell provided on the substrate, the first all-solid-state secondary cell including a first electrode layer, a solid electrolyte layer, and a second electrode layer; a first transistor including a first source drain, a second source drain electrically connected to the second electrode layer, and a first gate electrode; a first terminal electrically connected to the first electrode layer; a second terminal to control a potential of the first gate electrode; a third terminal electrically connected to the first source drain; and a sealing layer covering the first all-solid-state secondary cell and the first transistor, wherein the first terminal, the second terminal, and the third terminal are exposed on an upper surface of the sealing layer.

Abstract: A gas sensor including a first layer including copper (I) bromide, and a second layer, which is disposed on the first layer, and is a p-type semiconductor that is different from the copper (I) bromide, wherein one of the first layer and the second layer is more preferentially in contact with detection-target gas than the other.

Abstract: A gas sensor, which includes a solid electrolyte layer including positive charge carriers to which detection-target gas coordinates, an electrode arranged on part of a plane of the solid electrolyte layer, and a unit configured to accelerate movements of the positive charge carriers.

Abstract: An electronic device includes: a substrate; a first all-solid-state secondary cell provided on the substrate, the first all-solid-state secondary cell including a first electrode layer, a solid electrolyte layer, and a second electrode layer; a first transistor including a first source drain, a second source drain electrically connected to the second electrode layer, and a first gate electrode; a first terminal electrically connected to the first electrode layer; a second terminal to control a potential of the first gate electrode; a third terminal electrically connected to the first source drain; and a sealing layer covering the first all-solid-state secondary cell and the first transistor, wherein the first terminal, the second terminal, and the third terminal are exposed on an upper surface of the sealing layer.

Abstract: The electronic device includes a heat generator 54, a heat radiator 58, and a heat radiation material 56 disposed between the heat generator 54 and the heat radiator 58 and including a plurality of linear structures 12 of carbon atoms and a filling layer 14 formed of a thermoplastic resin and disposed between the plurality of linear structures 12.

Abstract: The sheet structure includes a plurality of linear structures of carbon atoms, a filling layer filled in gaps between the linear structures for supporting the plurality of linear structures, and a coating film formed over at least one ends of the plurality of linear structures and having a thermal conductivity of not less than 1 W/m·K.

Abstract: The sheet structure includes a plurality of linear structure bundles 12 each of which comprises a plurality of linear structures of carbon atoms arranged, spaced from each other at a first gap and which are arranged at a second gap which is larger than the first gap; and a filling layer 14 filled in the first gap and the second gap and supporting the plurality of linear structure bundles 12.

Abstract: The sheet structure includes a plurality of linear structure bundles including a plurality of linear structures of carbon atoms arranged at a first gap, and arranged at a second gap larger than the first gap, a graphite layer formed in a region between the plurality of linear structure bundles and connected to the plurality of linear structure bundles, and a filling layer filled in the first gap and the second gap and retaining the plurality of linear structure bundles and the graphite layer.

Abstract: The sheet structure includes a plurality of linear structure bundles including a plurality of linear structures of carbon atoms arranged at a first gap, and arranged at a second gap larger than the first gap, a graphite layer formed in a region between the plurality of linear structure bundles and connected to the plurality of linear structure bundles, and a filling layer filled in the first gap and the second gap and retaining the plurality of linear structure bundles and the graphite layer.

Abstract: The sheet structure includes a plurality of linear structure bundles including a plurality of linear structures of carbon atoms arranged at a first gap, and arranged at a second gap larger than the first gap, a graphite layer formed in a region between the plurality of linear structure bundles and connected to the plurality of linear structure bundles, and a filling layer filled in the first gap and the second gap and retaining the plurality of linear structure bundles and the graphite layer.