Abstract: A broad-band linear amplifier circuit includes a driver amplifier to produce a first amplified radio frequency (RF) signal in a first single RF band in response to a first input RF signal and to produce a second amplified RF signal in a second single RF band in response to a second input RF signal. The first single RF band and the second single RF band reside in a broad band that has a bandwidth more than two times a bandwidth of the first single RF band or the second single RF band. A sensing circuit can sense a power, a gain, or a phase of the first output RF signal and the second output RF signal, and to produce a sensing signal. A gain control circuit controls gain variation of the driver amplifier in response to the sensing signal.

Abstract: A linear amplifier circuit includes a multi-stage power amplifier that can amplify an input signal to produce an output signal, and a gain feedback control circuit coupled with the output and the input of the multi-stage power amplifier. An adjacent-channel leakage feedback control circuit can detect the output signal at the output of the multi-stage power amplifier and reduce adjacent-channel leakage in the output signal over an output power range based on the detected output signal.

Abstract: A substantially rectangular shaped power amplifier module includes a power amplifier for amplifying radio frequency signals, a bias control terminal and a power sensing terminal disposed on the same side of the power amplifier module, an input terminal and a ground terminal disposed on the same side of the power amplifier module, and an output terminal and one or more power supply terminals disposed on the same side of the power amplifier module.

Abstract: A linear amplifier circuit includes a first matching circuit that receives a first signal and to produce a first impedance matched signal, a first power amplifier that produces a first amplified signal in response to the first impedance matched signal under the control of a first bias signal, a second power amplifier that produces a second amplified signal in response to the first impedance matched signal under the control of a second bias signal, a biasing circuit that produces the first bias signal and the second bias signal. The first power amplifier can be activated by the first biasing signal when the power of the output signal is to exceed a first threshold value. The second power amplifier can be activated by the second biasing signal when the power of the output signal is below a second threshold value. A second matching circuit configured to receive the first amplified signal and the second amplified signal, and to produce an output signal.

Abstract: Systems and methods are disclosed for a device having one or more power amplifier and/or LNA circuits positioned on the amplifier module.

Abstract: A broad-band linear amplifier circuit includes a driver amplifier to produce a first amplified radio frequency (RF) signal in a first single RF band in response to a first input RF signal and to produce a second amplified RF signal in a second single RF band in response to a second input RF signal. The first single RF band and the second single RF band reside in a broad band that has a bandwidth more than two times a bandwidth of the first single RF band or the second single RF band. A sensing circuit can sense a power, a gain, or a phase of the first output RF signal and the second output RF signal, and to produce a sensing signal. A gain control circuit controls gain variation of the driver amplifier in response to the sensing signal.

Abstract: A substantially rectangular shaped power amplifier module includes a power amplifier for amplifying radio frequency signals, a bias control terminal and a power sensing terminal disposed on the same side of the power amplifier module, an input terminal and a ground terminal disposed on the same side of the power amplifier module, and an output terminal and one or more power supply terminals disposed on the same side of the power amplifier module.

Abstract: A linear amplifier circuit includes a first matching circuit that receives a first signal and to produce a first impedance matched signal, a first power amplifier that produces a first amplified signal in response to the first impedance matched signal under the control of a first bias signal, a second power amplifier that produces a second amplified signal in response to the first impedance matched signal under the control of a second bias signal, a biasing circuit that produces the first bias signal and the second bias signal. The first power amplifier can be activated by the first biasing signal when the power of the output signal is to exceed a first threshold value. The second power amplifier can be activated by the second biasing signal when the power of the output signal is below a second threshold value. A second matching circuit configured to receive the first amplified signal and the second amplified signal, and to produce an output signal.

Abstract: A radio frequency (RF) module provides first and second power amplifiers configured to produce first and second amplified RF signals at first and second output RF terminals, respectively; and first and second arrays of pads positioned opposite each other, the first array including the first output RF terminal and the second array including the second output RF terminal. The module also provides two reserve terminals that can be connected to capacitors, inductors, sensors for RF linearity, or can be left unconnected.

Abstract: A system of compatible modules includes a radio frequency (RF) module with a power amplifier configured to produce an amplified RF signal at an output RF terminal; and a first row of pads and a first column of pads intersecting at a corner pad of the module, and wherein the corner pad is coupled to the output RF terminal.

Abstract: An ammplifier circuit includes a first power amplifier that can produce a first amplified signal in response to a first input signal in a first frequency band, and a second power amplifier that can produce a second amplified signal in response to a second input signal in a second frequency band. A center frequency of the second frequency band is higher than the a center frequency of frequency band A control circuit can turn on or turn off the first power amplifier and configured to turn on or turn off the second power amplifier. A shunting circuit is coupled to an output of the second power amplifier. The shunting circuit can attentuate harmonic signals from the first frequency band under the control of the control circuit.

Abstract: A power amplifier can amplify an input radio frequency signal to produce an output radio frequency signal in response to a bias control signal. A programmable digital control unit produces the bias control signal and to transmit the bias control signal to the power amplifier.

Abstract: An integrated power amplifier (PA) module formed on a substrate includes a first cluster of transistor cells positioned in a first portion of the substrate; a second cluster of transistor cells positioned in a second portion of the substrate and spaced apart from the first portion; and a combiner coupled to the first and second clusters to combine the output of the first and second clusters.

Abstract: Systems and methods are disclosed to transmit and receive radio frequency (RF) signals by providing a plurality of high gain, highly directional antennas on a multi-layer printed circuit board; using a processor to gate RF signals from each antenna and to select an antenna transmission pattern based on antenna turned on or the combination of a number of antennas turned on, among others.

Abstract: Systems and methods are disclosed for a wireless communications device for receiving wireless electronic signals including first wireless electronic signals at a first frequency and second wireless electronic signals at a second frequency. The wireless communications device includes an antenna adapted to convert the wireless electronic signals into input electronic signals, and an amplifier coupled to the antenna, said amplifier being capable of amplifying the input electronic signals to produce amplified electronic signals and a diplexer adapted to receive the amplified electronic signals and selectively output one of the first electronic signals at the first frequency and the second electronic signals at the second frequency.

Abstract: A radio frequency (RF) module includes a first substrate adapted to receive passive circuits; and a second substrate adapted to receive active circuits, the first and second substrates electrically coupled through pads positioned on opposing surfaces of the first and second substrate.

Abstract: An integrated power amplifier (PA) module formed on a substrate includes a first cluster of transistor cells positioned in a first portion of the substrate; a second cluster of transistor cells positioned in a second portion of the substrate and spaced apart from the first portion; and a combiner coupled to the first and second clusters to combine the output of the first and second clusters.

Abstract: Systems and methods are disclosed for a frequency filtering circuit for wireless communications that includes a first resonator circuit comprising a first transmission line and a first capacitor coupled to the first transmission line and a second resonator circuit in parallel to the first resonator circuit, said second resonator circuit comprising a second transmission line and a second capacitor coupled to the second transmission line. A coupling circuit couples the first resonator circuit and the second resonator circuit.

Abstract: An amplifier circuit for amplifying radio frequency signals includes a radio frequency power amplifier to receive an input radio frequency signal and to output an amplified radio frequency signal; one or more sensors coupled to the radio frequency power amplifier to provide a closed-loop feedback signal; and a power sensor coupled to the amplified radio frequency signal.

Abstract: Systems and methods are disclosed for sharing a network with two switching devices forming a single pole double throw (SPDT) switch. Two SPDT switches can also be used in a double pole double throw (DPDT) configuration that shares a network, thus reducing component count and die size.