Abstract: An amplifier circuit for amplifying radio frequency signals having temperature compensation and bias compensation includes a radio frequency power amplifier that receives an input radio frequency signal and outputs an amplified radio frequency signal, and a first transistor performing as a detector diode with its collector and base connected. The base of the first transistor receives the amplified radio frequency signal from the power amplifier, a second DC bias input signal from a regulated DC source, and a third power-sensing signal. The amplifier circuit further includes a second transistor to amplify the DC component of the RF signal from the base of the first transistor. The base of the second transistor is coupled to the base of the first transistor. The collector of the second transistor outputs the power-sensing signal, which is coupled to the regulated DC source through a resistor.

Abstract: A power amplifier module for amplifying radio frequency signals includes first and second radio frequency power amplifiers each including one or more semiconductor transistors, adapted to receive an input radio frequency signal and a processed power-sensing control signal, and to output an amplified radio frequency signal; first and second power-sensing circuits each coupled to said first and second radio frequency power amplifiers and adapted to receive each amplified radio frequency signal and to output the power-sensing control signal; and control logic that receives and processes the power-sensing control signals, and outputs a processed power-sensing control signal in response to each quality or magnitude of each amplified radio frequency signal.

Abstract: Systems and methods are disclosed for a frequency filtering circuit for wireless communications that includes a first resonator circuit comprising a first transmission line and a first capacitor coupled to the first transmission line and a second resonator circuit in parallel to the first resonator circuit, said second resonator circuit comprising a second transmission line and a second capacitor coupled to the second transmission line. A coupling circuit couples the first resonator circuit and the second resonator circuit.

Abstract: Systems and methods are disclosed for sharing a network with two switching devices forming a single pole double throw (SPDT) switch. Two SPDT switches can also be used in a double pole double throw (DPDT) configuration that shares a network, thus reducing component count and die size.

Abstract: A power amplifier module for amplifying radio frequency signals includes first and second radio frequency power amplifiers with one or more semiconductor transistors, adapted to receive an input radio frequency signal and a processed power-sensing control signal and to output an amplified radio frequency signal; first and second power-sensing circuits each coupled to said first and second radio frequency power amplifiers and adapted to receive each amplified radio frequency signal and to output the power-sensing control signal; and control logic that receives and processes the power-sensing control signals, and outputs a processed power-sensing control signal in response to each quality or magnitude of each amplified radio frequency signal.

Abstract: Systems and methods are disclosed for a device having one or more power amplifier and/or LNA circuits positioned on the amplifier module.

Abstract: A power amplifier module for amplifying radio frequency signals includes first, second, third and fourth corner ground pads positioned at each corner of the power amplifier module; one or more radio frequency input pads positioned between the first and second corner ground pads; one or more radio frequency output pads positioned between the third and fourth corner ground pads; and one or more power amplifier circuits centrally positioned on the power amplifier module.

Abstract: Systems and methods are disclosed for a device having one or more active substrates comprising substantially transistors or diodes formed thereon; one of more passive substrate comprising substantially inductors, capacitors or resistors formed thereon; a plurality of bonding pads positioned on the active and passive substrates; and bonding wires connected to the bonding pads.

Abstract: A power amplifier module for amplifying radio frequency signals includes a radio frequency power amplifier including one or more semiconductor transistors, adapted to receive an input radio frequency signal and power control signals, and to output an amplified radio frequency signal. The power amplifier module is integrated with input and output impedance matching networks and a power sensor that is adapted to receive the amplified radio frequency signal and to output a signal indicating the power output level of the power amplifier module. The power amplifier module also includes control logic in accordance to at least one of the qualities and the power level of the amplified radio frequency signal.

Abstract: A power amplifier module for amplifying radio frequency signals includes a radio frequency power amplifier including one or more semiconductor transistors, adapted to receive an input radio frequency signal and power control signals, and to output an amplified radio frequency signal. The power amplifier module is integrated with input and output impedance matching networks and a power sensor that is adapted to receive the amplified radio frequency signal and to output a signal indicating the power output level of the power amplifier module. The power amplifier module also includes control logic in accordance to at least one of the qualities and the power level of the amplified radio frequency signal.

Abstract: A power amplifier module for amplifying radio frequency signals includes first and second radio frequency power amplifiers with one or more semiconductor transistors, adapted to receive an input radio frequency signal and a processed power-sensing control signal and to output an amplified radio frequency signal; first and second power-sensing circuits each coupled to said first and second radio frequency power amplifiers and adapted to receive each amplified radio frequency signal and to output the power-sensing control signal; and control logic that receives and processes the power-sensing control signals, and outputs a processed power-sensing control signal in response to each quality or magnitude of each amplified radio frequency signal.

Abstract: A power amplifier module for amplifying radio frequency signals includes a radio frequency power amplifier including one or more semiconductor transistors, adapted to receive an input radio frequency signal and power control signals, and to output an amplified radio frequency signal. The power amplifier module is integrated with input and output impedance matching networks and a power sensor that is adapted to receive the amplified radio frequency signal and to output a signal indicating the power output level of the power amplifier module. The power amplifier module also includes control logic in accordance to at least one of the qualities and the power level of the amplified radio frequency signal.

Abstract: A power amplifier module for amplifying radio frequency signals includes first, second, third and fourth corner ground pads positioned at each corner of the power amplifier module; a radio frequency input pad positioned between the first and second corner ground pads; a radio frequency output pad positioned between the third and fourth corner ground pads; and a power amplifier circuit centrally positioned on the power amplifier module, the power amplifier having an input coupled to the radio frequency input pad and an output coupled to the radio frequency output pad.

Abstract: Systems and methods are disclosed for a device with an active substrate comprising substantially transistors or diodes formed thereon, the active substrate having at least a power amplifier formed thereon; a passive substrate comprising substantially inductors, capacitors or resistors formed thereon; a plurality of bonding pads positioned on the active and passive substrates; and bonding wires connected to the bonding pads.

Abstract: An amplifier circuit for amplifying radio frequency signals having temperature compensation and bias compensation includes a radio frequency power amplifier that receives an input radio frequency signal and outputs an amplified radio frequency signal, and a first transistor performing as a detector diode with its collector and base connected. The base of the first transistor receives the amplified radio frequency signal from the power amplifier, a second DC bias input signal from a regulated DC source, and a third power-sensing signal. The amplifier circuit further includes a second transistor to amplify the DC component of the RF signal from the base of the first transistor. The base of the second transistor is coupled to the base of the first transistor. The collector of the second transistor outputs the power-sensing signal, which is coupled to the regulated DC source through a resistor.

Abstract: A power amplifier module for amplifying radio frequency signals includes first, second, third and fourth corner ground pads positioned at each corner of the power amplifier module; a radio frequency input pad positioned between the first and second corner ground pads; a radio frequency output pad positioned between the third and fourth corner ground pads; and a power amplifier circuit centrally positioned on the power amplifier module, the power amplifier having an input coupled to the radio frequency input pad and an output coupled to the radio frequency output pad.

Abstract: A power amplifier module for amplifying radio frequency signals includes a radio frequency power amplifier including one or more semiconductor transistors, adapted to receive an input radio frequency signal and power control signals, and to output an amplified radio frequency signal. The power amplifier module is integrated with input and output impedance matching networks and a power sensor that is adapted to receive the amplified radio frequency signal and to output a signal indicating the power output level of the power amplifier module. The power amplifier module also includes control logic in accordance to at least one of the qualities and the power level of the amplified radio frequency signal.

Abstract: A power amplifier module for amplifying radio frequency signals includes a radio frequency power amplifier including one or more semiconductor transistors, adapted to receive an input radio frequency signal and power control signals, and to output an amplified radio frequency signal. The power amplifier module is integrated with input and output impedance matching networks and a power sensor that is adapted to receive the amplified radio frequency signal and to output a signal indicating the power output level of the power amplifier module. The power amplifier module also includes control logic in accordance to at least one of the qualities and the power level of the amplified radio frequency signal.

Abstract: An amplifier circuit for amplifying radio frequency signals having temperature compensation and bias compensation includes a radio frequency power amplifier that receives an input radio frequency signal and outputs an amplified radio frequency signal, and a first transistor performing as a detector diode with its collector and base connected. The base of the first transistor receives the amplified radio frequency signal from the power amplifier, a second DC bias input signal from a regulated DC source, and a third power-sensing signal. The amplifier circuit further includes a second transistor to amplify the DC component of the RF signal from the base of the first transistor. The base of the second transistor is coupled to the base of the first transistor. The collector of the second transistor outputs the power-sensing signal, which is coupled to the regulated DC source through a resistor.