Abstract: A semiconductor memory device includes a memory cell array, a tag information register, a refresh control circuit and a DQ pin. The memory cell array includes multiple memory cells divided into first cells and second cells according to corresponding data retention times. The tag information register stores refresh cycle information for each wordline connected to the first cells and the second cells. The refresh control circuit is configured to generate a refresh enable signal and a refresh address based on the refresh cycle information. The DQ pin is configured to output the refresh enable signal, the refresh address and data stored in the memory cell array.

Abstract: A vertical memory device includes a channel, a ground selection line (GSL), word lines and a string selection line (SSL). The channel extends in a first direction substantially perpendicular to a top surface of a substrate, and a thickness of the channel is different according to height. The GSL, the word lines and the SSL are sequentially formed on a sidewall of the channel in the first direction and spaced apart from each other.

Abstract: An advertisement service system includes an advertisement application service providing module to provide an advertisement application service to a publisher, in which the advertisement application service provides the publisher online access to manage operation of an advertisement resource belonging to the publisher; an opened transaction service providing module to provide an opened transaction service that enables advertisement resource of the publisher to be transacted between the publisher and an advertiser or an advertisement agency; and an advertisement reporting module to provide a report about the advertisement resource executed by the advertisement application service providing module.

Abstract: A vertical NAND flash memory device includes a substrate having a face and a string of serially connected flash memory cells on the substrate. A first flash memory cell is adjacent the face, and a last flash memory cell is remote from the face. The flash memory cells include repeating layer patterns that are stacked on the face, and a pillar that extends through the series of repeating layer patterns. The pillar includes at least one oblique wall. At least two of the series of repeating layer patterns in the string are of different thicknesses. Other vertical microelectronic devices and related fabrication methods are also described.

Abstract: A vertical NAND flash memory device includes a substrate having a face and a string of serially connected flash memory cells on the substrate. A first flash memory cell is adjacent the face, and a last flash memory cell is remote from the face. The flash memory cells include repeating layer patterns that are stacked on the face, and a pillar that extends through the series of repeating layer patterns. The pillar includes at least one oblique wall. At least two of the series of repeating layer patterns in the string are of different thicknesses. Other vertical microelectronic devices and related fabrication methods are also described.

Abstract: A semiconductor memory device includes: a semiconductor region extending vertically from a first region of a substrate; a plurality of gate electrodes disposed on the first region of the substrate in a vertical direction, but separated from each other along a sidewall of the semiconductor region; a gate dielectric layer disposed between the semiconductor region and the plurality of gate electrodes; a substrate contact electrode extending vertically from the impurity-doped second region of the substrate; and an insulating region formed as an air gap between the substrate contact electrode and at least one of the plurality of gate electrodes.

Abstract: Non-volatile memory devices are provided including a control gate electrode on a substrate; a charge storage insulation layer between the control gate electrode and the substrate; a tunnel insulation layer between the charge storage insulation layer and the substrate; a blocking insulation layer between the charge storage insulation layer and the control gate electrode; and a material layer between the tunnel insulation layer and the blocking insulation layer, the material layer having an energy level constituting a bottom of a potential well.

Abstract: A vertical non-volatile memory device is structured/fabricated to include a substrate, groups of memory cell strings each having a plurality of memory transistors distributed vertically so that the memory throughout multiple layers on the substrate, integrated word lines coupled to sets of the memory transistors, respectively, and stacks of word select lines. The memory transistors of each set are those transistors, of one group of the memory cell strings, which are disposed in the same layer above the substrate. The word select lines are respectively connected to the integrated word lines.

Abstract: A multi-chip package structure can include a first package that includes a first circuit board that includes a lower surface including a first circuit pattern thereon and an upper surface, that is opposite the lower surface, and includes an upper pad layer thereon. The multi-chip package structure can further include at least one processor chip that is mounted on the lower surface of the first circuit board. A second package can be mounted on the first package and can include a second circuit board including an upper surface that includes a second circuit pattern thereon and a lower surface, which is opposite the upper surface, which can includes a lower pad layer thereon that is electrically connected to the upper pad layer of the first circuit board. At least one memory chip can be laminated and molded on the upper surface of the second package.

Abstract: A non-volatile memory device having a vertical structure includes a NAND string having a vertical structure. The NAND string includes a plurality of memory cells, and at least one pair of first selection transistors arranged to be adjacent to a first end of the plurality of memory cells. A plurality of word lines are coupled to the plurality of memory cells of the NAND string. A first selection line is commonly connected to the at least one pair of first selection transistors of the NAND string.

Abstract: A vertical NAND flash memory device includes a substrate having a face and a string of serially connected flash memory cells on the substrate. A first flash memory cell is adjacent the face, and a last flash memory cell is remote from the face. The flash memory cells include repeating layer patterns that are stacked on the face, and a pillar that extends through the series of repeating layer patterns. The pillar includes at least one oblique wall. At least two of the series of repeating layer patterns in the string are of different thicknesses. Other vertical microelectronic devices and related fabrication methods are also described.

Abstract: Disclosed is a method for fabricating a CuInS2 thin film by metal-organic chemical vapor deposition (MOCVD). The method comprises fabricating a copper thin film by depositing an asymmetric copper precursor on a substrate by MOCVD and fabricating a CuInS2 thin film by depositing an indium-sulfur-containing precursor on the copper thin film by MOCVD. The method enables fabrication of a CuInS2 thin film with a constant composition even under vacuum as well as an argon (Ar) atmosphere. Disclosed is further a CuInS2 thin film fabricated by the method. Disclosed is further a method for fabricating an In2S3 thin film for a window of a solar cell via deposition of an indium-sulfur-containing precursor on the CuInS2 thin film by MOCVD. Disclosed further is an In2S3 thin film fabricated by the method. The In2S3 thin film is useful for a substitute for CdS conventionally used for windows of solar cells and contributes to simplification in fabrication process of solar cells.

Abstract: An integrated circuit die is provided having a body portion having a singulation side and a pedestal portion extending from the body portion and having a singulation side coplanar with the singulation side of the body portion.

Abstract: An electrode tip dresser is disclosed which can dress a pair of electrode tips to a usable state while achieving a desired accuracy of a tip surface of each electrode tip including an angular portion at a peripheral edge of the tip surface, without separating each electrode tip from a welding gun. The electrode tip dresser includes a holder which is rotatable about a common axis of electrode tips, a pair of support shafts which are held by the holder, are arranged in parallel in an approach direction of the electrode tips, and extend in a direction orthogonal to the approach direction, and a pair of dressing rollers which are rotatably supported by the support shafts, respectively, to dress the electrode tips to a usable state.

Abstract: An integrated circuit package system is provided including providing a substrate having a first surface and second surface; mounting interconnects to the first surface; mounting integrated circuit dies to the first surface; embedding the interconnects and the integrated circuit die within an encapsulant on the substrate and leaving top portions of the interconnects exposed; attaching solder balls to the second surface; and singulating the substrate and the encapsulant into a plurality of integrated circuit packages.

Abstract: An integrated circuit package system is provided including forming a leadframe structure having a encapsulant space provided predominantly inside the leadframe structure and attaching a die to the leadframe structure in the encapsulant space inside the leadframe structure. The system further includes electrically connecting the die to the leadframe structure and injecting encapsulant into the encapsulant space to form the integrated circuit package system.

Abstract: A fabrication method of a self-aligned ferroelectric gate transistor using a buffer layer of high etching selectivity is disclosed. A stacked structure is formed with a buffer layer with high etching selectivity inserted between a silicon substrate and a ferroelectric layer, and etching is performed on a portion where a source and a drain will be formed and then stopped at the buffer layer, thereby fabricating a self-aligned ferroelectric gate transistor without damage to the silicon thin film, and thus, an integration degree of a chip can be improved.

Abstract: A method for fabricating a large die package with a leadframe having leads and a paddle is provided. An interposer is attached onto the leadframe with the interposer extending over at least a portion of the paddle and at least a portion of the leads of the leadframe. The interposer is insulated from the leads. A die is attached to the interposer.

Abstract: A method of manufacturing a semiconductor package includes providing a substrate having a plurality of contacts with solder bump contact areas that are unmasked. A plurality of underfill bumps is formed on the plurality of contacts selectively in the solder bump contact areas. A die having a plurality of solder bumps is positioned on the substrate so the plurality of solder bumps is substantially vertically aligned with the plurality of underfill bumps. The plurality of solder bumps is pressed into the plurality of underfill bumps until the plurality of solder bumps contacts the plurality of contacts. The plurality of solder bumps is reflowed. The die, the plurality of solder bumps, and the plurality of contacts are encapsulated to expose a lower surface of the plurality of contacts.

Abstract: Stacked package assemblies include first and second stacked packages, each having at least one die affixed to, and electrically interconnected with, a die attach side of the package substrate. One package is inverted in relation to the other; that is, the die attach sides of the package substrates face one another, and the “land” sides of the substrates face away from one another. Z-interconnection of the packages is by wire bonds connecting the first and second package substrates. The assembly is encapsulated in such a way that both the second package substrate (one side of the assembly) and a portion of the first package substrate (on the opposite side of the assembly) are exposed, so that second level interconnection and interconnection with additional components may be made. In some embodiments the first package is a chip scale package, and the second package is a land grid array package.