Patents by Inventor Imad Yousif
Imad Yousif has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20140262044Abstract: Embodiments of the present invention generally relate to an apparatus for processing substrates having improved magnetic shielding. One embodiment of the present invention provides a plasma processing chamber having an RF match, a plasma source and a plasma region defined between a chamber ceiling and a substrate support. At least one of the RF match, plasma source and plasma region is shielded from any external magnetic field with a shielding material that has a relative magnetic permeability ranging from about 20,000 to about 200,000. As a result, the inherent process non-uniformities of the hardware may be reduced effectively without the overlaid non-uniformities from external factors such as earth's geomagnetic field.Type: ApplicationFiled: March 4, 2014Publication date: September 18, 2014Inventors: IMAD YOUSIF, SAMER BANNA, WAHEB BISHARA, ALVARO GARCIA DE GORORDO
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Publication number: 20140087561Abstract: Embodiments of the present invention provide an apparatus for transferring substrates and confining a processing environment in a chamber. One embodiment of the present invention provides a hoop assembly for using a processing chamber. The hoop assembly includes a confinement ring defining a confinement region therein, and three or more lifting fingers attached to the hoop. The three or more lifting fingers are configured to support a substrate outside the inner volume of the confinement ring.Type: ApplicationFiled: February 29, 2012Publication date: March 27, 2014Applicant: APPLIED MATERIALS, INC.Inventors: Jared Ahmad Lee, Martin Jeff Salinas, Paul B. Reuter, Imad Yousif, Aniruddha Pal
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Publication number: 20130334199Abstract: Embodiments of the present invention provide an apparatus heating and supporting a substrate in a processing chamber. One embodiment of the present invention provides a substrate support assembly. The substrate support assembly includes a heated plate having a substrate supporting surface on a front side and a cantilever arm extending from a backside of the heated plate. The heated plate is configured to support and heat a substrate on the substrate supporting surface. The cantilever arm has a first end attached to the heated plate near a central axis of the heated plate, and a second end extending radially outwards from the central axis.Type: ApplicationFiled: February 9, 2012Publication date: December 19, 2013Applicant: APPLIED MATERIALS, INC.Inventors: Imad Yousif, Martin Jeffrey Salinas, Paul B. Reuter, Aniruddha Pal, Jared Ahmad Lee
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Publication number: 20130337655Abstract: Embodiments of the present invention provide a dual load lock chamber capable of processing a substrate. In one embodiment, the dual load lock chamber includes a chamber body defining a first chamber volume and a second chamber volume isolated from one another. Each of the lower and second chamber volumes is selectively connectable to two processing environments through two openings configured for substrate transferring. The dual load lock chamber also includes a heated substrate support assembly disposed in the second chamber volume. The heated substrate support assembly is configured to support and heat a substrate thereon. The dual load lock chamber also includes a remote plasma source connected to the second chamber volume for supplying a plasma to the second chamber volume.Type: ApplicationFiled: February 29, 2012Publication date: December 19, 2013Applicant: APPLIED MATERIALS, INC.Inventors: Jared Ahmad Lee, Martin Jeffrey Salinas, Paul B. Reuter, Imad Yousif, Aniruddha Pal
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Publication number: 20130284287Abstract: Substrate supports for use in process chambers having limited physical space for configuring chamber components are disclosed. In some embodiments, a substrate support may include a body having a support surface; a utilities feed coupled to the body and comprising a second portion coupled to and extending laterally away from the body beyond a diameter of the body, and first portion coupled to the second portion and extending perpendicularly away from the body; and a cover plate movably disposable beneath and with respect to the body between a first position disposed completely beneath the body, and a second position wherein the cover plate is disposed over the first portion of the utilities feed and includes a first portion disposed beneath the body, and wherein the first portion has a curved edge having a radius equal to the distance from a central axis of the support surface to the curved edge.Type: ApplicationFiled: April 26, 2013Publication date: October 31, 2013Applicant: APPLIED MATERIALS, INC.Inventors: PAUL BENJAMIN REUTER, MARTIN JEFFREY SALINAS, JARED AHMAD LEE, IMAD YOUSIF
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Publication number: 20130206594Abstract: Correction of skew in plasma etch rate distribution is performed by tilting the overhead RF source power applicator about a tilt axis whose angle is determined from skew in processing data. Complete freedom of movement is provided by incorporating exactly three axial motion servos supporting a floating plate from which the overhead RF source power applicator is suspended.Type: ApplicationFiled: March 4, 2013Publication date: August 15, 2013Inventors: Kenneth S. Collins, Andrew Nguyen, Martin Jeffrey Salinas, Imad Yousif, Ming Xu
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Patent number: 8414736Abstract: Correction of skew in plasma etch rate distribution is performed by tilting the overhead RF source power applicator about a tilt axis whose angle is determined from skew in processing data. Complete freedom of movement is provided by incorporating exactly three axial motion servos supporting a floating plate from which the overhead RF source power applicator is suspended.Type: GrantFiled: May 25, 2010Date of Patent: April 9, 2013Assignee: Applied Materials, Inc.Inventors: Kenneth S. Collins, Andrew Nguyen, Martin Jeffrey Salinas, Imad Yousif, Ming Xu
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Patent number: 8329593Abstract: Polymer is removed from the backside of a wafer held on a support pedestal in a reactor using an arcuate side gas injection nozzle extending through the reactor side wall with a curvature matched to the wafer edge and supplied with plasma by-products from a remote plasma source.Type: GrantFiled: December 12, 2007Date of Patent: December 11, 2012Assignee: Applied Materials, Inc.Inventors: Imad Yousif, Anchel Sheyner, Ajit Balakrishna, Nancy Fung, Ying Rui, Martin Jeffrey Salinas, Walter R. Merry, Shahid Rauf
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Publication number: 20120222813Abstract: Embodiments of the present disclosure generally relate to vacuum processing chambers having different pumping requirements and connected to a shared pumping system through a single foreline. In one embodiment, the vacuum processing chambers include a high conductance pumping conduit and a low conductance pumping conduit coupled to a single high conductance foreline. In another embodiment, a plurality of unbalanced chamber groups may be connected to a common pumping system by a final foreline.Type: ApplicationFiled: February 29, 2012Publication date: September 6, 2012Applicant: APPLIED MATERIALS, INC.Inventors: Aniruddha Pal, Martin Jeffrey Salinas, Jared Ahmad Lee, Paul B. Reuter, Imad Yousif
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Patent number: 8092605Abstract: A method and apparatus for confining a plasma are provided herein. In one embodiment, an apparatus for confining a plasma includes a substrate support and a magnetic field forming device for forming a magnetic field proximate a boundary between a first region disposed at least above the substrate support, where a plasma is to be formed, and a second region, where the plasma is to be selectively restricted. The magnetic field has b-field components perpendicular to a direction of desired plasma confinement that selectively restrict movement of charged species of the plasma from the first region to the second region dependent upon the process conditions used to form the plasma.Type: GrantFiled: November 28, 2006Date of Patent: January 10, 2012Assignee: Applied Materials, Inc.Inventors: Steven C. Shannon, Masao Drexel, James A. Stinnett, Ying Rui, Ying Xiao, Roger A. Lindley, Imad Yousif
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Patent number: 7967996Abstract: A process is provided for removing polymer from a backside of a workpiece and/or photoresist from a front side of the workpiece. For backside polymer removal, the wafer is positioned near the ceiling to above a localized or remote plasma source having a side outlet through the sidewall of the chamber, and backside polymer is removed by rotating the workpiece while flowing plasma by-products from the side outlet to the wafer backside. For front side photoresist removal, the wafer is positioned away from the ceiling and below the side outlet of the localized plasma source, and front side photoresist is remove by rotating the workpiece while flowing plasma by-products from the side outlet to the wafer front side.Type: GrantFiled: May 8, 2007Date of Patent: June 28, 2011Assignee: Applied Materials, Inc.Inventors: Kenneth S. Collins, Hiroji Hanawa, Andrew Nguyen, Shahid Rauf, Ajit Balakrishna, Valentin N. Todorow, Kartik Ramaswamy, Martin Jeffrey Salinas, Imad Yousif, Walter R. Merry, Ying Rui, Michael R. Rice
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Publication number: 20110120505Abstract: Embodiments of the present invention provide apparatus and method for front side protection while processing side and backside of a substrate. One embodiment of the present invention provides a showerhead configured to provide a purge gas to a front side of a substrate during a backside etch processing. The showerhead comprises a body configured to be disposed over the front side of the substrate. The body has a process surface configured to face the front side of the substrate. The process surface has an outer circular region, a central region, a middle region between the outer central region and the central region. The first plurality of holes are distributed in the outer circular region and configured to direct the purge gas towards an edge area of the front side of the substrate. No gas delivery hole is distributed within a substantial portion of the middle region.Type: ApplicationFiled: January 31, 2011Publication date: May 26, 2011Applicant: APPLIED MATERIALS, INC.Inventors: IMAD YOUSIF, Ying Rui, Nancy Fung, Martin Jeffrey Salinas, Ajit Balakrishna, Anchel Sheyner, Shahid Rauf, Walter R. Merry
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Publication number: 20110048644Abstract: Correction of skew in plasma etch rate distribution is performed by tilting the overhead RF source power applicator about a tilt axis whose angle is determined from skew in processing data. Complete freedom of movement is provided by incorporating exactly three axial motion servos supporting a floating plate from which the overhead RF source power applicator is suspended.Type: ApplicationFiled: May 25, 2010Publication date: March 3, 2011Applicant: Applied Materials, Inc.Inventors: Kenneth S. Collins, Andrew Nguyen, Martin Jeffrey Salinas, Imad Yousif, Ming Xu
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Patent number: 7879183Abstract: Embodiments of the present invention provide apparatus and method for front side protection while processing side and backside of a substrate. One embodiment of the present invention provides a showerhead configured to provide a purge gas to a front side of a substrate during a backside etch processing. The showerhead comprises a body configured to be disposed over the front side of the substrate. The body has a process surface configured to face the front side of the substrate. The process surface has an outer circular region, a central region, a middle region between the outer central region and the central region. The first plurality of holes are distributed in the outer circular region and configured to direct the purge gas towards an edge area of the front side of the substrate. No gas delivery hole is distributed within a substantial portion of the middle region.Type: GrantFiled: February 27, 2008Date of Patent: February 1, 2011Assignee: Applied Materials, Inc.Inventors: Imad Yousif, Ying Rui, Nancy Fung, Martin Jeffrey Salinas, Ajit Balakrishna, Anchel Sheyner, Shahid Rauf, Walter R. Merry
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Publication number: 20090277874Abstract: A method and an apparatus for removing polymer from a substrate are provided. In one embodiment, an apparatus utilized to remove polymer from a substrate includes a processing chamber having a chamber wall and a chamber lid defining a process volume, a substrate support assembly disposed in the processing chamber, a remote plasma source coupled to the processing chamber through an outlet port formed through the processing chamber, the outlet port having an opening pointing toward an periphery region of a substrate disposed on the substrate support assembly, and a substrate supporting surface of the substrate support assembly that substantially electrically floats the substrate disposed thereon relative to the substrate support assembly.Type: ApplicationFiled: April 30, 2009Publication date: November 12, 2009Applicant: APPLIED MATERIALS, INC.Inventors: Ying Rui, Imad Yousif, Daniel Hoffman
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Publication number: 20090214798Abstract: Embodiments of the present invention provide apparatus and method for front side protection while processing side and backside of a substrate. One embodiment of the present invention provides a showerhead configured to provide a purge gas to a front side of a substrate during a backside etch processing. The showerhead comprises a body configured to be disposed over the front side of the substrate. The body has a process surface configured to face the front side of the substrate. The process surface has an outer circular region, a central region, a middle region between the outer central region and the central region. The first plurality of holes are distributed in the outer circular region and configured to direct the purge gas towards an edge area of the front side of the substrate. No gas delivery hole is distributed within a substantial portion of the middle region.Type: ApplicationFiled: February 27, 2008Publication date: August 27, 2009Inventors: IMAD YOUSIF, Ying Rui, Nancy Fung, Martin Jeffrey Salinas, Ajit Balakrishna, Anchel Sheyner, Shahid Rauf, Walter R. Merry
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Patent number: 7552736Abstract: A process is provided for removing polymer from a backside of a workpiece. The process includes supporting the workpiece on the backside in a vacuum chamber while leaving at least a peripheral annular portion of the backside exposed. The process further includes confining gas flow at the edge of the workpiece within a gap at the edge of the workpiece on the order of about 1% of the diameter of the chamber, the gap defining a boundary between an upper process zone containing the wafer front side and a lower process zone containing the wafer backside. The process also includes providing a polymer etch precursor gas underneath the backside edge of the workpiece and applying RF power to a region underlying the backside edge of the workpiece to generate a first plasma of polymer etch species concentrated in an annular ring concentric with and underneath the backside edge of the workpiece.Type: GrantFiled: March 14, 2007Date of Patent: June 30, 2009Assignee: Applied Materials, Inc.Inventors: Kenneth S. Collins, Hiroji Hanawa, Andrew Nguyen, Ajit Balakrishna, David Palagashvili, James P. Cruse, Jennifer Y. Sun, Valentin N. Todorov, Shahid Rauf, Kartik Ramaswamy, Gerhard M. Schneider, Imad Yousif, Martin Jeffrey Salinas
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Publication number: 20090156013Abstract: Polymer is removed from the backside of a wafer held on a support pedestal in a reactor using an arcuate side gas injection nozzle extending through the reactor side wall with a curvature matched to the wafer edge and supplied with plasma by-products from a remote plasma source.Type: ApplicationFiled: December 12, 2007Publication date: June 18, 2009Inventors: Imad Yousif, Anchel Sheyner, Ajit Balakrishna, Nancy Fung, Ying Rui, Martin Jeffrey Salinas, Walter R. Merry, Shahid Rauf
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Publication number: 20080179007Abstract: A reactor is provided for removing polymer from a backside of a workpiece. The reactor includes a vacuum chamber having a ceiling, a floor and a cylindrical side wall. The reactor further includes workpiece support apparatus within the chamber configured for a workpiece to be placed thereon with its front side facing the ceiling. The support apparatus is configured to leave at least an annular periphery of the backside of the workpiece exposed. A confinement member defines a narrow gap with an outer edge of the workpiece, the narrow gap being on the order of about 1% of the workpiece diameter, the narrow gap corresponding to a boundary dividing the chamber between an upper process zone and a lower process zone, the reactor further comprising a vacuum pump coupled to the lower process zone.Type: ApplicationFiled: March 14, 2007Publication date: July 31, 2008Inventors: KENNETH S. COLLINS, Hiroji Hanawa, Andrew Nguyen, Ajit Balakrishna, David Palagashvili, James P. Cruse, Jennifer Y. Sun, Valentin N. Todorow, Shahid Rauf, Kartik Ramaswamy, Gerhard M. Schneider, Imad Yousif, Martin Jeffrey Salinas
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Patent number: D699692Type: GrantFiled: January 19, 2012Date of Patent: February 18, 2014Assignee: Applied Materials, Inc.Inventor: Imad Yousif