Abstract: A three-dimensional woven active fiber composite is disclosed. The composite includes a plurality of actuating fibers configured in a three-dimensional arrangement. The composite further includes a plurality of conductive wire electrodes that are woven through the plurality of actuating fibers. The electrodes may be configured into two dimensional electrode mats that are spaced apart along the length of the composite. Filler fibers may be used between adjacent electrode mats to help reinforce the composite. A sleeve member can also be used to help provide compressive containment for the actuating fibers and conductive wire electrodes.

Abstract: A microcondenser device for an evaporative emission control system includes a housing having an inlet for receiving fuel vapor and a condensation outlet for discharging condensed fuel vapor, and a porous element disposed in the housing and fluidly interposed between the inlet and the condensation outlet for absorbing the fuel vapor received through the inlet. The microcondenser device further includes a thermoelectric element in thermal contact with the porous element for removing heat from the fuel vapor absorbed by the porous element to condense the fuel vapor.

Abstract: A high-power and high-efficiency light emitting device with emission wavelength (?peak) ranging from 280 nm to 360 nm is fabricated. The new device structure uses non-polar or semi-polar AlInN and AlInGaN alloys grown on a non-polar or semi-polar bulk GaN substrate.

Abstract: A yellow Light Emitting Diode (LED) with a peak emission wavelength in the range 560-580 nm is disclosed. The LED is grown on one or more III-nitride-based semipolar planes and an active layer of the LED is composed of indium (In) containing single or multi-quantum well structures. The LED quantum wells have a thickness in the range 2-7 nm. A multi-color LED or white LED comprised of at least one semipolar yellow LED is also disclosed.

Abstract: A yellow Light Emitting Diode (LED) with a peak emission wavelength in the range 560-580 nm is disclosed. The LED is grown on one or more III-nitride-based semipolar planes and an active layer of the LED is composed of indium (In) containing single or multi-quantum well structures. The LED quantum wells have a thickness in the range 2-7 nm. A multi-color LED or white LED comprised of at least one semipolar yellow LED is also disclosed.

Abstract: A three-dimensional woven active fiber composite is disclosed. The composite includes a plurality of actuating fibers configured in a three-dimensional arrangement. The composite further includes a plurality of conductive wire electrodes that are woven through the plurality of actuating fibers. The electrodes may be configured into two dimensional electrode mats that are spaced apart along the length of the composite. Filler fibers may be used between adjacent electrode mats to help reinforce the composite. A sleeve member can also be used to help provide compressive containment for the actuating fibers and conductive wire electrodes.

Abstract: A method of fabricating an (Al, In, Ga)N based optoelectronic device, comprising forming an n-type ohmic contact on an (Al, In, Ga)N surface of the device, wherein the surface comprises an Nitrogen face (N-face) and a N-rich face of the (Al, In, Ga)N, the n-type contact is on the N-face and the N-rich face, and the current spreading of the n-type ohmic contact is enhanced by a combination of a lower and a higher contact resistance on the surface.

Abstract: A method for reduction of efficiency droop using an (Al, In, Ga)N/AlxIn1-xN superlattice electron blocking layer (SL-EBL) in nitride based light emitting diodes.

Abstract: A yellow Light Emitting Diode (LED) with a peak emission wavelength in the range 560-580 nm is disclosed. The LED is grown on one or more III-nitride-based semipolar planes and an active layer of the LED is composed of indium (In) containing single or multi-quantum well structures. The LED quantum wells have a thickness in the range 2-7 nm. A multi-color LED or white LED comprised of at least one semipolar yellow LED is also disclosed.

Abstract: A high-power and high-efficiency light emitting device with emission wavelength (?peak) ranging from 280 nm to 360 nm is fabricated. The new device structure uses non-polar or semi-polar AlInN and AlInGaN alloys grown on a non-polar or semi-polar bulk GaN substrate.

Abstract: A high-power and high-efficiency light emitting device with emission wavelength (?peak) ranging from 280 nm to 360 nm is fabricated. The new device structure uses non-polar or semi-polar AlInN and AlInGaN alloys grown on a non-polar or semi-polar bulk GaN substrate.

Abstract: A microcondenser device for an evaporative emission control system associated with an internal combustion engine includes a housing having a lower wall and at least one side wall extending upward from the lower wall. The lower wall and the at least one side wall together defining a chamber in the housing. A thermoelectric element is supported by the at least one side wall in spaced relation relative to the lower wall. An inlet is defined in the housing for admitting fuel vapor into the chamber. A condensation outlet is defined in the housing for discharging liquid fuel that is condensed from the fuel vapor in the chamber. A porous heat sink element is received in the chamber for absorbing the fuel vapor admitted through the inlet. The porous heat sink element is in conductive thermal contact with the thermoelectric element.

Abstract: A cholesteric display may be formed, in some embodiments, using a single display element to produce multi-colors for display. A cholesteric material may be sandwiched between a pair of substrates, each associated with pairs of opposed electrodes that are arranged in general transversely to the optical axis of incident light. The first pair of electrodes produce one of two liquid crystal states and result in the reflection of light of a particular wavelength. Light of other wavelengths may be reflected when a second pair (or set) of opposed electrodes, arranged in general transversely, also to the optical axis of incident light, are biased appropriately. So does a third pair (or set) of electrodes. A black and white color display may be generated from a single display element by modulating the pitch length of the cholesteric material within each pairs (or sets).

Abstract: A high-power and high-efficiency light emitting device with emission wavelength (?peak) ranging from 280 nm to 360 nm is fabricated. The new device structure uses non-polar or semi-polar AlInN and AlInGaN alloys grown on a non-polar or semi-polar bulk GaN substrate.

Abstract: A cholesteric display may be formed, in some embodiments, using a single display element to produce multi-colors for display. A cholesteric material may be sandwiched between a pair of substrates, each associated with pairs of opposed electrodes that are arranged in general transversely to the optical axis of incident light. The first pair of electrodes produce one of two liquid crystal states and result in the reflection of light of a particular wavelength. Light of other wavelengths may be reflected when a second pair (or set) of opposed electrodes, arranged in general transversely, also to the optical axis of incident light, are biased appropriately. So does a third pair (or set) of electrodes. A black and white color display may be generated from a single display element by modulating the pitch length of the cholesteric material within each pairs (or sets).

Abstract: A III-nitride optoelectronic device comprising a light emitting diode (LED) or laser diode with a peak emission wavelength longer than 500 nm. The III-nitride device has a dislocation density, originating from interfaces between an indium containing well layer and barrier layers, less than 9×109 cm?2. The III-nitride device is grown with an interruption time, between growth of the well layer and barrier layers, of more than 1 minute.

Abstract: A yellow Light Emitting Diode (LED) with a peak emission wavelength in the range 560-580 nm is disclosed. The LED is grown on one or more III-nitride-based semipolar planes and an active layer of the LED is composed of indium (In) containing single or multi-quantum well structures. The LED quantum wells have a thickness in the range 2-7 nm. A multi-color LED or white LED comprised of at least one semipolar yellow LED is also disclosed.

Abstract: A cholesteric display may be formed, in some embodiments, using a single display element to produce multi-colors for display. A cholesteric material may be sandwiched between a pair of substrates, each associated with pairs of opposed electrodes that are arranged in general transversely to the optical axis of incident light. The first pair of electrodes produce one of two liquid crystal states and result in the reflection of light of a particular wavelength. Light of other wavelengths may be reflected when a second pair (or set) of opposed electrodes, arranged in general transversely, also to the optical axis of incident light, are biased appropriately. So does a third pair (or set) of electrodes. A black and white color display may be generated from a single display element by modulating the pitch length of the cholesteric material within each pairs (or sets).

Abstract: A canisterless evaporative emission control system for an internal combustion engine includes a fuel tank for the internal combustion engine wherein vaporized fuel is generated and a microcondenser device for processing the vaporized fuel received from the fuel tank. An inlet passageway establishes fluid communication between the fuel tank and the microcondenser device for delivering the vaporized fuel from the fuel tank to the microcondenser device.

Abstract: A canisterless evaporative emission control system for an internal combustion engine includes a fuel tank for the internal combustion engine wherein vaporized fuel is generated and a microcondenser device for processing the vaporized fuel received from the fuel tank. An inlet passageway establishes fluid communication between the fuel tank and the microcondenser device for delivering the vaporized fuel from the fuel tank to the microcondenser device.