Abstract: A lithium secondary battery includes a cathode including a cathode active material, and an anode facing the cathode. The cathode active material includes a lithium composite oxide particle having a nickel molar ratio of 0.8 or more among elements other than lithium and oxygen, and a reversible lithium-titanium oxide selectively present in a charging region of 4.1 V or more and less than 4.3 V. Life-span stability is improved by the reversible lithium-titanium oxide at a high-voltage region.

Abstract: The cathode active material for a lithium secondary battery according to embodiments of the present invention includes lithium-transition metal composite oxide particles including a plurality of primary particles, and the lithium-transition metal composite oxide particles have a lithium-potassium-containing portion formed between the primary particles. Thereby, it is possible to improve life-span properties and capacity properties by preventing the layer structure deformation of the primary particles and removing residual lithium.

Abstract: Disclosed are a novel rebamipide prodrug, a method for preparing the same, and use thereof. Also, a pharmaceutical composition comprising the novel rebamipide prodrug as an active ingredient is provided. The rebamipide prodrug is increased 25-fold in absorption rate compared to rebamipide itself, and can be applied to the prophylaxis or therapy of gastric ulcer, acute gastritis, chronic gastritis, xerophthalmia, cancer, osteoarthritis, rheumatoid arthritis, or obesity.

Abstract: A method of manufacturing a cathode active material for a lithium secondary battery according to embodiments of the present invention includes performing a first heat treatment on a first mixture of a transition metal precursor and a lithium precursor at a first calcination temperature to obtain a preliminary lithium-transition metal composite oxide particle; and performing a second heat treatment on a second mixture obtained by adding the lithium precursor to the preliminary lithium-transition metal composite oxide particle at a second calcination temperature which is lower than the first calcination temperature to form a lithium-transition metal composite oxide particle.

Abstract: An electronic device includes a body including a first portion and a second portion, a display including a first display area and a second display area, and a processor embedded inside the body. The first portion and the second portion rotate about a rotation axis. The first display area is disposed in the first portion. The second display area is disposed in the second portion. The processor is configured to execute a plurality of applications in the first display area by a first division line in a state where the body is folded by rotation of the first portion and the second portion and to execute the plurality of applications in the first display area and the second display area by a second division line parallel to the rotation axis in a state where the body is unfolded by the rotation of the first portion and the second portion.

Abstract: A cathode active material for a lithium secondary battery includes a lithium-transition metal composite oxide particle having a lattice strain (?) of 0.18 or less, which is calculated. by applying Williamson-Hall method defined by Equation 1 to XRD peaks measured through XRD analysis, and having an XRD peak intensity ratio of 8.9% or less, which is defined by Equation 2. By controlling the lattice strain and XRD peak intensity ratio of the lithium-transition metal composite oxide particle, a lithium secondary battery with improved life-span characteristics as well as output characteristics is provided.

Abstract: A lithium secondary battery includes a cathode including a cathode active material including a lithium-transition metal composite oxide particle having a crystal grain size of greater than 500 nm measured through X-ray diffraction (XRD) analysis, and an anode disposed to face the cathode. The present invention provides a lithium secondary battery having improved life-span characteristics while suppressing gas generation due to crack of the particles by controlling the crystal grain size of the lithium-transition metal composite oxide particles.

Abstract: A cathode active material for a lithium secondary battery including a lithium-transition metal composite oxide particle is provided. A crystal grain size of the lithium-transition metal composite oxide particle measured by an XRD analysis is 250 nm or more, and an XRD peak intensity ratio of the lithium-transition metal composite oxide particle is 9.8% or less. A lithium secondary battery including the lithium-transition metal composite oxide particle and having improved life-span and rate capability is provided.

Abstract: A three-dimensional semiconductor memory device includes a substrate, an electrode structure including electrodes vertically stacked on the substrate and each having a pad portion, electrode separation structures penetrating the electrode structure and apart from each other in a second direction, and contact plugs coupled to the pad portions. The contact plugs comprise first contact plugs and second contact plugs apart in the second direction from the first contact plugs. The electrode separation structures comprise a first electrode separation between the first and second contact plugs. The first contact plugs are apart in the second direction at a first distance from the first electrode separation structure. The second contact plugs are apart in the second direction from the first electrode separation structure at a second distance, different from the first distance.

Abstract: Three-dimensional (3D) semiconductor memory devices and methods of manufacturing the same are provided. Three-dimensional (3D) semiconductor memory devices may include a substrate including a cell array region and a connection region, a lower stack structure including a plurality of lower electrodes vertically stacked on the substrate, the lower stack structure having a first stair step structure extending in a first direction on the connection region and a second stair step structure extending in a second direction substantially perpendicular to the first direction on the connection region, and a plurality of intermediate stack structures vertically stacked on the lower stack structure. Each of the intermediate stack structures includes a plurality of intermediate electrodes vertically stacked and has a third stair step structure extending in the second direction on the connection region.

Abstract: A vertical memory device includes a channel, gate lines, and a cutting pattern, respectively, on a substrate. The channel extends in a first direction substantially perpendicular to an upper surface of the substrate. The gate lines are spaced apart from each other in the first direction. Each of the gate lines surrounds the channel and extends in a second direction substantially parallel to the upper surface of the substrate. The cutting pattern includes a first cutting portion extending in the first direction and cutting the gate lines, and a second cutting portion crossing the first cutting portion and merged with the first cutting portion.

Abstract: A method for auto-scaling at least one web server and at least one WAS (Web Application Server) is provided. The method includes a WAS administrating server grouping, as a first service group, both at least one first web server and at least one first WAS, which are connected with each other to provide a first application service, and grouping, as a second service group, both at least one second web server and at least one second WAS, which are connected with each other to provide a second application service, to thereby create at least two groups each of which includes at least its corresponding pair of web server and WAS, and the WAS administrating server allowing each of the grouped pairs of the web servers and the WAS's to be scaled out or scaled in, independently, by a process of scaling-out or scaling-in.

Abstract: A vertical memory device includes a channel, gate lines, and a cutting pattern, respectively, on a substrate. The channel extends in a first direction substantially perpendicular to an upper surface of the substrate. The gate lines are spaced apart from each other in the first direction. Each of the gate lines surrounds the channel and extends in a second direction substantially parallel to the upper surface of the substrate. The cutting pattern includes a first cutting portion extending in the first direction and cutting the gate lines, and a second cutting portion crossing the first cutting portion and merged with the first cutting portion.

Abstract: An electronic device includes a body including a first portion and a second portion, a display including a first display area and a second display area, and a processor embedded inside the body. The first portion and the second portion rotate about a rotation axis. The first display area is disposed in the first portion. The second display area is disposed in the second portion. The processor is configured to execute a plurality of applications in the first display area by a first division line in a state where the body is folded by rotation of the first portion and the second portion and to execute the plurality of applications in the first display area and the second display area by a second division line parallel to the rotation axis in a state where the body is unfolded by the rotation of the first portion and the second portion.

Abstract: A vertical memory device includes a channel, gate lines, and a cutting pattern, respectively, on a substrate. The channel extends in a first direction substantially perpendicular to an upper surface of the substrate. The gate lines are spaced apart from each other in the first direction. Each of the gate lines surrounds the channel and extends in a second direction substantially parallel to the upper surface of the substrate. The cutting pattern includes a first cutting portion extending in the first direction and cutting the gate lines, and a second cutting portion crossing the first cutting portion and merged with the first cutting portion.

Abstract: A method for connecting webservers and web application servers (WAS's) is provided. The method includes steps of: (a) a WAS admin server, while managing multiple existing WAS managed servers and communicating with multiple existing webservers, if a new webserver except the multiple existing webservers or a new WAS managed server except the multiple existing WAS managed servers is determined as being operated, receiving connection state information of the new webserver or that of the new WAS managed server; and (b) the WAS admin server delivering the connection state information of the new webserver or that of the new WAS to the multiple existing WAS managed servers and the multiple existing webservers.

Abstract: An electronic device and a control method therefor are disclosed. The disclosed electronic device includes an input part, a communication part, a processor, and a memory, wherein the memory may include instructions for controlling the communication part such that the processor requests identification information including a call word for using an artificial intelligence assistant function to another electronic device when an event for requesting configuration of a first mode in which the artificial intelligence assistant function of the other electronic device can be used occurs, for controlling the communication part to receive the identification information from the other electronic device through the communication part in response to the request, and transmit a user command to the other electronic device based on the identification information if the user command is received during operation of the first mode of the artificial intelligence assistant.

Abstract: A three-dimensional semiconductor memory device includes a substrate, an electrode structure including electrodes vertically stacked on the substrate and each having a pad portion, electrode separation structures penetrating the electrode structure and apart from each other in a second direction, and contact plugs coupled to the pad portions. The contact plugs comprise first contact plugs and second contact plugs apart in the second direction from the first contact plugs. The electrode separation structures comprise a first electrode separation between the first and second contact plugs. The first contact plugs are apart in the second direction at a first distance from the first electrode separation structure. The second contact plugs are apart in the second direction from the first electrode separation structure at a second distance, different from the first distance.

Abstract: Three-dimensional (3D) semiconductor memory devices and methods of manufacturing the same are provided. Three-dimensional (3D) semiconductor memory devices may include a substrate including a cell array region and a connection region, a lower stack structure including a plurality of lower electrodes vertically stacked on the substrate, the lower stack structure having a first stair step structure extending in a first direction on the connection region and a second stair step structure extending in a second direction substantially perpendicular to the first direction on the connection region, and a plurality of intermediate stack structures vertically stacked on the lower stack structure. Each of the intermediate stack structures includes a plurality of intermediate electrodes vertically stacked and has a third stair step structure extending in the second direction on the connection region.

Abstract: A controlling method of an electronic device is provided. The method includes receiving a search request for a searching object device from a terminal device, broadcasting a pre-defined search signal in response to the search request, in response to a response signal being received from an external device in response to the pre-defined search signal, analyzing a pattern of the received response signal and determining whether the external device is the searching object device, and in response to the external device being determined as the searching object device, transmitting intensity information of the received response signal to the terminal device to determine a position of the external device which is determined as the searching object device.