Patents by Inventor In-bok Baek
In-bok Baek has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11961551Abstract: A bitline sense amplifier including: an amplifier which is connected between a first sensing bitline and a second sensing bitline, and detects and amplifies a voltage difference between a first bitline and a second bitline in response to a first control signal and a second control signal; and an equalizer which is connected between a first supply line through which the first control signal is supplied and a second supply line through which the second control signal is supplied, and pre-charges the first bitline and the second bitline with a precharge voltage in response to an equalizing control signal, wherein the equalizer includes an equalizing enable transistor in which a source terminal is connected to the first supply line and performs equalizing in response to the equalizing control signal.Type: GrantFiled: January 27, 2022Date of Patent: April 16, 2024Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Soo Bong Chang, Young-Il Lim, Bok-Yeon Won, Seok Jae Lee, Dong Geon Kim, Myeong Sik Ryu, In Seok Baek, Kyoung Min Kim, Sang Wook Park
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Publication number: 20240120274Abstract: A semiconductor device a first fin-shaped pattern provided at a first surface of a substrate and extending in a second direction, a first source/drain pattern disposed on the first fin-shaped pattern and connected thereto, a first source/drain contact disposed on the first source/drain pattern and connected thereto, a buried conductive pattern extending through the substrate and connected to the first source/drain contact, a contact connection via disposed between the first source/drain contact and the buried conductive pattern. The contact connection via is directly connected to the first source/drain contact and a back wiring line disposed on a second surface of the substrate and connected to the buried conductive pattern. A width of the contact connection via increases as the contact connection via extends away from the second surface. A width of the first source/drain contact decreases as the first source/drain contact extends away from the second surface of the substrate.Type: ApplicationFiled: June 30, 2023Publication date: April 11, 2024Inventors: Eui Bok LEE, Rak Hwan KIM, Jong Min BAEK, Moon Kyun SONG
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Publication number: 20240113160Abstract: A semiconductor device include a substrate including a plurality of protrusions protruding from an upper surface thereof and arranged two-dimensionally in a first direction and a second direction intersecting each other, a first trench provided between the protrusions in the first direction, and a second trench provided between the protrusions in the second direction, a first device isolation layer filling the first trench, gate patterns disposed on the protrusions in the second direction, upper surfaces of the protrusions exposed at both sides of the gate patterns, respectively, and a second device isolation layer filling a space between the gate patterns in the second direction and the second trench, and each of the gate patterns has a first sidewall adjacent to the second trench and aligned with an inner wall of the second trench.Type: ApplicationFiled: April 19, 2023Publication date: April 4, 2024Applicant: Samsung Electronics Co., Ltd.Inventors: Juseong MIN, Kyeonghoon PARK, Jae-Bok BAEK, Donghyuck JANG, Jeehoon HAN, Taeyoon HONG
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Publication number: 20230039511Abstract: A semiconductor device includes a lower insulating film that includes a first and second trenches on a substrate, a first wiring in the first trench, a second wiring in the second trench, a capping insulating film including an insulating recess portion and an insulating liner portion, an upper insulating film on the capping insulating film, and an upper contact that penetrates the capping insulating film and connects to the first wiring, The insulating recess portion is in the second trench and the insulating liner portion extends along an upper surface of the lower insulating film. The upper contact includes a contact recess portion in the first trench, an extended portion connected to the contact recess portion, and a plug portion connected to the extended portion inside the upper insulating film. A width of the extended portion is greater than a width of the plug portion.Type: ApplicationFiled: April 26, 2022Publication date: February 9, 2023Applicant: Samsung Electronics Co., Ltd.Inventors: Ju Seong MIN, Jae-Bok BAEK, Jee Hoon HAN
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Publication number: 20220328511Abstract: A three-dimensional semiconductor memory device includes a first substrate, a peripheral circuit structure with peripheral transistors on the first substrate, a second substrate on the peripheral circuit structure, a lower insulating layer in contact with a side surface of the second substrate, a top surface of the lower insulating layer having a concave profile, a first stack on the second substrate, the first stack including repeatedly alternating first interlayer dielectric layers and gate electrodes, and a first mold structure on the lower insulating layer, the first mold structure including repeatedly alternating sacrificial layers and second interlayer dielectric layers, and a top surface of the first mold structure being at a level lower than a topmost surface of the first stack.Type: ApplicationFiled: December 3, 2021Publication date: October 13, 2022Inventors: Giyong CHUNG, Jae-Bok BAEK, Jaeryong SIM, Jeehoon HAN
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Patent number: 11146075Abstract: One exemplary embodiment provides a charging and discharging control apparatus for an energy storage apparatus, the charging and discharging control apparatus including: a charging and discharging controlling unit configured to control a charging and discharging current amount of the energy storage apparatus according to a droop curve; a communication unit configured to receive state information from the energy storage apparatus; and a droop curve adjusting unit configured to adjust a characteristic value of the droop curve according to the state information.Type: GrantFiled: October 9, 2019Date of Patent: October 12, 2021Assignee: KOREA INSTITUTE OF ENERGY RESEARCHInventors: Su Yong Chae, Sea Seung Oh, Hak Geun Jeong, Jong Bok Baek, Soo Bin Han, Suk In Park
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Publication number: 20210157289Abstract: The present disclosure relates to a multifunctional energy storage system in which one energy storage system is capable of performing a plurality of functions and an operating method thereof.Type: ApplicationFiled: June 11, 2020Publication date: May 27, 2021Applicant: Korea Institute of Energy ResearchInventors: Jong Bok BAEK, Kuk Yeol BAE, Mo Se KANG, Sea Seung OH, Su Yong CHAE, Seon Ri HONG, Hak Geun JEONG
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Publication number: 20210104896Abstract: One exemplary embodiment provides a charging and discharging control apparatus for an energy storage apparatus, the charging and discharging control apparatus including: a charging and discharging controlling unit configured to control a charging and discharging current amount of the energy storage apparatus according to a droop curve; a communication unit configured to receive state information from the energy storage apparatus; and a droop curve adjusting unit configured to adjust a characteristic value of the droop curve according to the state information.Type: ApplicationFiled: October 9, 2019Publication date: April 8, 2021Applicant: Korea Institute of Energy ResearchInventors: Su Yong CHAE, Sea Seung Oh, Hak Geun Jeong, Jong Bok Baek, Soo Bin Han, Suk In Park
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Patent number: 10031545Abstract: A power conversion system including: a first power conversion module configured to change a current (first module current) supplied to an output node, to monitor efficiency of the power conversion system according to the change in the first module current, and to determine a setting value of the first module current to increase the efficiency; and a second power conversion module configured to control a current (second module current) supplied to the output node according to a voltage (output voltage) formed at the output node.Type: GrantFiled: July 13, 2017Date of Patent: July 24, 2018Assignee: KOREA INSTITUTE OF ENERGY RESEARCHInventors: Su Yong Chae, Jong Bok Baek, Seung Weon Yu, Gyu Duk Kim, Suk In Park
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Patent number: 9650238Abstract: A vibration device including a supporting portion formed to cover both ends of a vibration region, and a method of manufacturing the vibration device are provided. The vibration device may include a lower substrate on which an insulating layer is formed, an upper substrate connected onto the insulating layer, and including a vibration region that vibrates and that is separated from the lower substrate by at least a predetermined distance, and a supporting portion formed to cover both ends of the vibration region, to support the vibration region.Type: GrantFiled: September 2, 2014Date of Patent: May 16, 2017Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: In Bok Baek, Han Young Yu, Yark Yeon Kim, Young Jun Kim, Chang Geun Ahn, Yong Sun Yoon, Bong Kuk Lee, Ji Eun Lim, Won Ick Jang
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Patent number: 9379122Abstract: A memory device includes an array of floating gate memory cells. Adjacent memory cells are separated by a plurality of air gaps that electrically decouple respective active regions of adjacent memory cells from one another. Additionally, the air gaps electrically decouple an active region of a memory cell from a floating gate of an adjacent memory cell.Type: GrantFiled: January 20, 2015Date of Patent: June 28, 2016Assignee: Samsung Electronics Co., Ltd.Inventors: Jin-Hyun Shin, Jae-Bok Baek
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Publication number: 20160054168Abstract: Provided is an apparatus for sensing a fuel level, and more particularly, an apparatus for sensing a fuel level that is installed in a fuel tank of a vehicle to sense the fuel level. The apparatus for sensing a fuel level may improve reliability of the sensing of the level because a pipe is vertically installed in the fuel tank and an ultrasonic wave sensor is provided to a lower end of an interior of the pipe to measure the level of the fuel by an ultrasonic wave, and a filter is installed in a fuel inflow and outflow hole formed in the pipe and prevents an inflow of foreign materials into the pipe, thereby making it possible to more accurately sense the level of the fuel.Type: ApplicationFiled: August 24, 2015Publication date: February 25, 2016Inventors: Se Jin Kim, Suk Min Yun, Sun Bok Baek, In Seok Sohn
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Publication number: 20150371996Abstract: A memory device includes an array of floating gate memory cells. Adjacent memory cells are separated by a plurality of air gaps that electrically decouple respective active regions of adjacent memory cells from one another. Additionally, the air gaps electrically decouple an active region of a memory cell from a floating gate of an adjacent memory cell.Type: ApplicationFiled: January 20, 2015Publication date: December 24, 2015Inventors: Jin-Hyun Shin, Jae-Bok Baek
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Publication number: 20150061455Abstract: A vibration device including a supporting portion formed to cover both ends of a vibration region, and a method of manufacturing the vibration device are provided. The vibration device may include a lower substrate on which an insulating layer is formed, an upper substrate connected onto the insulating layer, and including a vibration region that vibrates and that is separated from the lower substrate by at least a predetermined distance, and a supporting portion formed to cover both ends of the vibration region, to support the vibration region.Type: ApplicationFiled: September 2, 2014Publication date: March 5, 2015Inventors: In Bok BAEK, Han Young YU, Yark Yeon KIM, Young Jun KIM, Chang Geun AHN, Yong Sun YOON, Bong Kuk LEE, Ji Eun LIM, Won Ick JANG
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Publication number: 20140179096Abstract: A semiconductor device includes a substrate including a first region and a second region, a gate group disposed in the first region of the substrate, the gate group including a plurality of cell gate patterns and at least one selection gate pattern, a first gate pattern disposed in the second region of the substrate, a group spacer covering a top surface and a side surface of the gate group, the group spacer having a first inflection point, and a first pattern spacer covering a top surface and a side surface of the first gate pattern, the first pattern spacer having a second inflection point.Type: ApplicationFiled: February 27, 2014Publication date: June 26, 2014Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jae-Hwang SIM, Jae-Bok BAEK
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Patent number: 8680602Abstract: A semiconductor device includes a substrate including a first region and a second region, a gate group disposed in the first region of the substrate, the gate group including a plurality of cell gate patterns and at least one selection gate pattern, a first gate pattern disposed in the second region of the substrate, a group spacer covering a top surface and a side surface of the gate group, the group spacer having a first inflection point, and a first pattern spacer covering a top surface and a side surface of the first gate pattern, the first pattern spacer having a second inflection point.Type: GrantFiled: March 6, 2012Date of Patent: March 25, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Jae-Hwang Sim, Jae-Bok Baek
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Patent number: 8628650Abstract: Provided are a method and apparatus for measuring an isoelectric point using a field effect transistor. The method includes providing a field effect transistor including a substrate, source and drain electrodes disposed on the substrate and spaced apart from each other, and a channel region between the source and drain electrodes, providing a first electrolyte solution having a first concentration to the channel region of the field effect transistor and measuring a first current value of the channel region between the source and drain electrodes, providing a second electrolyte solution having a second concentration greater than the first concentration and measuring a second current value of the channel region between the source and drain electrodes, and determining the isoelectric point of the field effect transistor or a material disposed on the field effect transistor using a difference between the first and second current values.Type: GrantFiled: December 16, 2008Date of Patent: January 14, 2014Assignee: Electronics and Telecommunications Research InstituteInventors: Chil Seong Ah, Ansoon Kim, Chan Woo Park, Chang-Geun Ahn, Jong-Heon Yang, In Bok Baek, Taeyoub Kim, Gun Yong Sung, Seon-Hee Park, Han Young Yu
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Patent number: 8529750Abstract: Provided are an apparatus and method for detecting biomolecules. The apparatus includes a FET having a substrate, a source electrode, a drain electrode, a channel region between the source and drain electrodes, and probe molecules fixed to the channel region, wherein the source and drain electrodes are separated on the substrate, a microfluid supplier selectively supplying one of a reference buffer solution of low ionic concentration and a reaction solution of high ionic concentration containing target molecules, to the channel region of the FET to which the probe molecules are fixed, and a biomolecule detector detecting the target molecules by measuring a first current value of the channel region of the FET, and a second current value of the channel region of the FET to which the target molecules and the probe molecules that bind to each other in the reaction solution of high ionic concentration are fixed.Type: GrantFiled: November 20, 2008Date of Patent: September 10, 2013Assignee: Electronics and Telecommunications Research InstituteInventors: Chil-Seong Ah, Ansoon Kim, Chan-Woo Park, Chang-Geun Ahn, Jong-Heon Yang, In-Bok Baek, Taeyoub Kim, HyeKyoung Yang, Gun-Yong Sung, Seon-Hee Park, Han-Young Yu, Moon-Gyu Jang
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Patent number: 8426900Abstract: Provided is a sensing device, which includes a reactive material layer (260) responding to a specific functional group in a fluid, a sensing capacitor (B) including first and second electrodes disposed on and under an insulating layer (230), the first electrode being disposed under the reactive material layer (260), and a field effect transistor including a gate electrode connected with the first electrode of the sensing capacitor. Here, the reactive material layer (260) is formed in a conductive three-dimensional structure to widen a surface area. Thus, the sensing device may have high sensitivity by maximizing a capacitor sharing effect and a change in voltage amount applied to a gate, which may be caused by widening a surface area of the conductive three-dimensional structure with respect to the fluid flow.Type: GrantFiled: May 27, 2009Date of Patent: April 23, 2013Assignee: Electronics and Telecommunications Research InstituteInventors: Chang Geun Ahn, Chan Woo Park, Jong Heon Yang, In Bok Baek, Chil Seong Ah, An Soon Kim, Tae Youb Kim, Gun Yong Sung
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Patent number: 8403087Abstract: An outer rotor-type motor of the present invention comprises a stator block, a stator, a main cooling part, an outer rotor and an outer housing. The stator block is formed in the shape of a cylinder with a rear end closed. The stator block is installed on a shaft passing through a central portion of the rear end thereof. The stator is fixedly installed on an outer circumferential surface of the stator block. The main cooling portion is provided on an inner circumferential surface of the stator block to lower temperature of a corresponding portion. The outer rotor rotatably installed at an outside of the stator and the outer housing has a circumferential portion fixed to a front circumferential portion of the outer rotor.Type: GrantFiled: May 26, 2008Date of Patent: March 26, 2013Inventors: Gwang-Ju Park, Byung-Gill Ha, Byung-Ju Kang, Do-Hyung Kim, Qyu-Bok Baek, Sung-Min Park, Ki-Yong Ue