Patents by Inventor In-bok Baek
In-bok Baek has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8403087Abstract: An outer rotor-type motor of the present invention comprises a stator block, a stator, a main cooling part, an outer rotor and an outer housing. The stator block is formed in the shape of a cylinder with a rear end closed. The stator block is installed on a shaft passing through a central portion of the rear end thereof. The stator is fixedly installed on an outer circumferential surface of the stator block. The main cooling portion is provided on an inner circumferential surface of the stator block to lower temperature of a corresponding portion. The outer rotor rotatably installed at an outside of the stator and the outer housing has a circumferential portion fixed to a front circumferential portion of the outer rotor.Type: GrantFiled: May 26, 2008Date of Patent: March 26, 2013Inventors: Gwang-Ju Park, Byung-Gill Ha, Byung-Ju Kang, Do-Hyung Kim, Qyu-Bok Baek, Sung-Min Park, Ki-Yong Ue
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Publication number: 20120299077Abstract: A semiconductor device includes a substrate including a first region and a second region, a gate group disposed in the first region of the substrate, the gate group including a plurality of cell gate patterns and at least one selection gate pattern, a first gate pattern disposed in the second region of the substrate, a group spacer covering a top surface and a side surface of the gate group, the group spacer having a first inflection point, and a first pattern spacer covering a top surface and a side surface of the first gate pattern, the first pattern spacer having a second inflection point.Type: ApplicationFiled: March 6, 2012Publication date: November 29, 2012Inventors: Jae-Hwang SIM, Jae-Bok Baek
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Patent number: 8263964Abstract: Provided are three-dimensional (3D) nanodevices including 3D nanostructures. The 3D nanodevice includes at least one nanostructure, each nanostructure including an oscillation portion floating over a substrate and support portions for supporting both lengthwise end portions of the oscillation portion, supports disposed on the substrate to support the support portions of each of the nanostructures, at least one controller disposed at an upper portion of the substrate, a lower portion of the substrate, or both the upper and lower portions of the substrate to control each of the nanostructures, and a sensing unit disposed on each of the oscillation portions to sense an externally supplied adsorption material. Thus, unlike in a typical planar device, generation of impurities between a nanodevice and a substrate can be reduced, and mechanical vibration can be caused.Type: GrantFiled: May 19, 2008Date of Patent: September 11, 2012Assignee: Electronics and Telecommunications Research InstituteInventors: Han Young Yu, Byung Hoon Kim, An Soon Kim, In Bok Baek, Chil Seong Ah, Jong Heon Yang, Chan Woo Park, Chang Geun Ahn
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Patent number: 8241939Abstract: A method for manufacturing a biosensor includes forming a silicon nanowire channel, etching a first conductivity-type single crystalline silicon layer which is a top layer of a Silicon-On-Insulator (SOI) substrate to form a first conductivity-type single crystalline silicon line pattern, doping both sidewalls of the first conductivity-type single crystalline silicon line pattern with impurities of a second conductivity-type opposite to the first conductivity-type to form a second conductivity-type channel, forming second conductivity-type pads for forming electrodes at both ends of the first conductivity-type single crystalline silicon line pattern, forming, in an undoped region of the first conductivity-type single crystalline silicon line pattern, a first electrode for applying a reverse-bias voltage to insulate the first conductivity-type single crystalline silicon line pattern and the second conductivity-type channel from each other, and forming second electrodes for applying a bias voltage across the secType: GrantFiled: July 24, 2008Date of Patent: August 14, 2012Assignee: Electronics and Telecommunications Research InstituteInventors: Chan Woo Park, Chang Geun Ahn, Jong Heon Yang, In Bok Baek, Chil Seong Ah, Han Young Yu, An Soon Kim, Tae Youb Kim, Moon Gyu Jang, Myung Sim Jun
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Patent number: 8182582Abstract: Provided are gas storage medium, a gas storage apparatus having the same and a method thereof. The gas storage medium includes a plurality of material layers each having a variable valence, wherein each of the material layers includes redundant electrons that are not participated in chemical bonding.Type: GrantFiled: December 6, 2007Date of Patent: May 22, 2012Assignee: Electronics and Telecommunications Research InstituteInventors: Han-Young Yu, Ansoon Kim, Jong-Heon Yang, In-Bok Baek, Chang-Geun Ahn, Chil-Seong Ah, Chan-Woo Park, Seongjae Lee, Taehyoung Zyung
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Patent number: 8169006Abstract: Provided is a bio-sensor chip. The bio-sensor chip includes a sensing part, a board circuit part, a channel part, and a cover. In the sensing part, a target material and a detection material interact with each other to detect the target material. The board circuit part is electrically connected to the sensing part. The channel part provides a solution material containing the target material into the sensing part. The cover is coupled to the board circuit part to cover the channel part and the sensing part.Type: GrantFiled: September 16, 2009Date of Patent: May 1, 2012Assignee: Electronics and Telecommunications Research InstituteInventors: Taeyoub Kim, Jong-Heon Yang, Chang-Geun Ahn, Chan Woo Park, Chil Seong Ah, Ansoon Kim, In Bok Baek, Gun Yong Sung, Seon Hee Park
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Patent number: 8163240Abstract: A detection device and system are provided. The detection device includes a detection capacitor and a Field Effect Transistor (FET). The detection capacitor has a reactive material layer reacting to a specific functional group in a fluid, and first and second electrodes disposed on the both surfaces of an insulating layer, and the FET has a source electrode connected with the second electrode, a gate electrode connected with the first electrode, and a drain electrode. Here, the insulating layer of the detection capacitor is thicker than a gate insulating layer of the FET.Type: GrantFiled: June 13, 2008Date of Patent: April 24, 2012Assignee: Electronics and Telecommunications Research InstituteInventors: Chang Geun Ahn, Chan Woo Park, Jong Heon Yang, In Bok Baek, Chil Seong Ah, Han Young Yu, An Soon Kim, Tae Youb Kim, Moon Gyu Jang, Seon Hee Park
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Patent number: 8119430Abstract: Provided are a method of manufacturing a semiconductor nanowire sensor device and a semiconductor nanowire sensor device manufactured according to the method. The method includes preparing a first conductive type single crystal semiconductor substrate, forming a line-shaped first conductive type single crystal pattern from the first conductive type single crystal semiconductor substrate, forming second conductive type epitaxial patterns on both sidewalls of the first conductive type single crystal pattern, and forming source and drain electrodes at both ends of the second conductive type epitaxial patterns.Type: GrantFiled: June 30, 2009Date of Patent: February 21, 2012Assignee: Electronics and Telecommunications Research InstituteInventors: Chan-Woo Park, Chang-Geun Ahn, Jong-Heon Yang, In-Bok Baek, Chil-Seong Ah, An-Soon Kim, Tae-Youb Kim, Gun-Yong Sung, Seon-Hee Park
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Publication number: 20110194976Abstract: A detection device and system are provided. The detection device includes a detection capacitor and a Field Effect Transistor (FET). The detection capacitor has a reactive material layer reacting to a specific functional group in a fluid, and first and second electrodes disposed on the both surfaces of an insulating layer, and the FET has a source electrode connected with the second electrode, a gate electrode connected with the first electrode, and a drain electrode. Here, the insulating layer of the detection capacitor is thicker than a gate insulating layer of the FET.Type: ApplicationFiled: June 13, 2008Publication date: August 11, 2011Applicant: Electronics and Telecommunications Research InstituteInventors: Chang Geun Ahn, Chan Woo Park, Jong Heon Yang, In Bok Baek, Chil Seong Ah, Han Young Yu, An Soon Kim, Tae Youb Kim, Moon Gyu Jang, Seon Hee Park
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Publication number: 20110193052Abstract: Provided are three-dimensional (3D) nanodevices including 3D nanostructures. The 3D nanodevice includes at least one nanostructure, each nanostructure including an oscillation portion floating over a substrate and support portions for supporting both lengthwise end portions of the oscillation portion, supports disposed on the substrate to support the support portions of each of the nanostructures, at least one controller disposed at an upper portion of the substrate, a lower portion of the substrate, or both the upper and lower portions of the substrate to control each of the nanostructures, and a sensing unit disposed on each of the oscillation portions to sense an externally supplied adsorption material. Thus, unlike in a typical planar device, generation of impurities between a nanodevice and a substrate can be reduced, and mechanical vibration can be caused.Type: ApplicationFiled: May 19, 2008Publication date: August 11, 2011Applicant: Electronics and Telecommunications Research InstitInventors: Han Young Yu, Byung Hoon Kim, An Soon Kim, In Bok Baek, Chil Seong Ah, Jong Heon Yang, Chan Woo Park, Chang Geun Ahn
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Publication number: 20110180856Abstract: Provided is a sensing device, which includes a reactive material layer (260) responding to a specific functional group in a fluid, a sensing capacitor (B) including first and second electrodes disposed on and under an insulating layer (230), the first electrode being disposed under the reactive material layer (260), and a field effect transistor including a gate electrode connected with the first electrode of the sensing capacitor. Here, the reactive material layer (260) is formed in a conductive three-dimensional structure to widen a surface area. Thus, the sensing device may have high sensitivity by maximizing a capacitor sharing effect and a change in voltage amount applied to a gate, which may be caused by widening a surface area of the conductive three-dimensional structure with respect to the fluid flow.Type: ApplicationFiled: May 27, 2009Publication date: July 28, 2011Applicant: Electronics and Telecommunications Research InstituteInventors: Chang Geun Ahn, Chan Woo Park, Jong Heon Yang, In Bok Baek, Chil Seong Ah, An Soon Kim, Tae Youb Kim, Gun Yong Sung
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Publication number: 20110165557Abstract: Provided are an apparatus and method for detecting biomolecules. The apparatus includes a FET having a substrate, a source electrode, a drain electrode, a channel region between the source and drain electrodes, and probe molecules fixed to the channel region, wherein the source and drain electrodes are separated on the substrate, a microfluid supplier selectively supplying one of a reference buffer solution of low ionic concentration and a reaction solution of high ionic concentration containing target molecules, to the channel region of the FET to which the probe molecules are fixed, and a biomolecule detector detecting the target molecules by measuring a first current value of the channel region of the FET, and a second current value of the channel region of the FET to which the target molecules and the probe molecules that bind to each other in the reaction solution of high ionic concentration are fixed.Type: ApplicationFiled: November 20, 2008Publication date: July 7, 2011Applicant: Electronics and Telecommunications Research InstituteInventors: Chil-Seong Ah, Ansoon Kim, Chan-Woo Park, Chang-Geun Ahn, Jong-Heon Yang, In-Bok Baek, Taeyoub Kim, HyeKyoung Yang, Gun-Yong Sung, Seon-Hee Park, Han-Young Yu, Moon-Gyu Jang
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Publication number: 20110139637Abstract: Provided are a method and apparatus for measuring an isoelectric point using a field effect transistor. The method includes providing a field effect transistor including a substrate, source and drain electrodes disposed on the substrate and spaced apart from each other, and a channel region between the source and drain electrodes, providing a first electrolyte solution having a first concentration to the channel region of the field effect transistor and measuring a first current value of the channel region between the source and drain electrodes, providing a second electrolyte solution having a second concentration greater than the first concentration and measuring a second current value of the channel region between the source and drain electrodes, and determining as the isoelectric point of the field effect transistor or a material disposed on the field effect transistor using a difference between the first and second current values.Type: ApplicationFiled: December 16, 2008Publication date: June 16, 2011Applicant: Electronics and Telecommunications Research InstituteInventors: Chil Seong Ah, Ansoon Kim, Chan Woo Park, Chang-Geun Ahn, Jong-Heon Yang, In Bok Baek, Taeyoub Kim, Gun Yong Sung, Seon-Hee Park, Han Young Yu
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Patent number: 7947585Abstract: Provided is a method of manufacturing a semiconductor device in which properties of photoresist through a lithography process are changed to form a dummy structure, and the structure is applied to a process of forming a gate electrode.Type: GrantFiled: December 4, 2006Date of Patent: May 24, 2011Assignee: Electronics and Telecommunications Research InstituteInventors: In Bok Baek, Seong Jae Lee, Jong Heon Yang, Chang Geun Ahn, Han Young Yu, Ki Ju Im
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Patent number: 7893466Abstract: Provided are a semiconductor Field-Effect Transistor (FET) sensor and a method of fabricating the same. The method includes providing a semiconductor substrate, forming a sensor structure having a fin-shaped structure on the semiconductor substrate, injecting ions for electrical ohmic contact into the sensor structure, and depositing a metal electrode on the sensor structure, immobilizing a sensing material to be specifically combined with a target material onto both sidewall surfaces of the fin-shaped structure, and forming a passage on the sensor structure such that the target material passes through the fin-shaped structure.Type: GrantFiled: August 20, 2008Date of Patent: February 22, 2011Assignee: Electronics and Telecommunications Research InstituteInventors: Jong Heon Yang, In Bok Baek, Chang Geun Ahn, Chan Woo Park, An Soon Kim, Han Young Yu, Chil Seong Ah, Tae Youb Kim, Myung Sim Jun, Moon Gyu Jang
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Publication number: 20110031803Abstract: An outer rotor-type motor of the present invention comprises a stator block, a stator, a main cooling part, an outer rotor and an outer housing. The stator block is formed in the shape of a cylinder with a rear end closed. The stator block is installed on a shaft passing through a central portion of the rear end thereof. The stator is fixedly installed on an outer circumferential surface of the stator block. The main cooling portion is provided on an inner circumferential surface of the stator block to lower temperature of a corresponding portion. The outer rotor rotatably installed at an outside of the stator and the outer housing has a circumferential portion fixed to a front circumferential portion of the outer rotor.Type: ApplicationFiled: May 26, 2008Publication date: February 10, 2011Inventors: Gwang-Ju Park, Byung-Gill Ha, Byung-Ju Kang, Do-Hyung Kim, Qyu-Bok Baek, Sung-Min Park, Ki-Yong Ue
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Publication number: 20110017613Abstract: Provided are gas storage medium, a gas storage apparatus having the same and a method thereof. The gas storage medium includes a plurality of material layers each having a variable valence, wherein each of the material layers includes redundant electrons that are not participated in chemical bonding.Type: ApplicationFiled: December 6, 2007Publication date: January 27, 2011Applicant: ELECTRONICS AND TELECOMMUNICAITONS RESEARCH INSTITUTEInventors: Han-Young Yu, Ansoon Kim, Jong-Heon Yang, In-Bok Baek, Chang-Geun Ahn, Chil-Seong Ah, Chan-Woo Park, Seongjae Lee, Taehyoung Zyung
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Patent number: 7750378Abstract: Provided are a field effect transistor and a method of fabricating the same, wherein the field effect transistor is formed which has a hyperfine channel length by employing a technique for forming a sidewall spacer and adjusting the deposition thickness of a thin film. In the field effect transistor of the present invention, a source junction and a drain junction are thin, and the overlap between the source and the gate and between the drain and the gate is prevented, thereby lowering parasitic resistance. Further, the gate electric field is easily introduced to the drain extending region, so that the carrier concentration is effectively controlled in the channel at the drain. Also, the drain extending region is formed to be thinner than the source, so that the short channel characteristic is excellent.Type: GrantFiled: April 10, 2006Date of Patent: July 6, 2010Assignee: Electronics and Telecommunications Research InstituteInventors: Won-ju Cho, Chang-geun Ahn, Ki-ju Im, Jong-heon Yang, In-bok Baek, Seong-jae Lee
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Publication number: 20100143887Abstract: Provided are a biosensor and a method for detecting biomolecules by using the biosensor. The biosensor includes a detection unit and a fluid channel. The detection unit is disposed on a substrate and has a surface to which detection target molecules binding specifically to probe molecules are immobilized. The fluid channel is configured to provide an analysis solution containing the probe molecules to the detection target molecules. The probe molecules bind specifically to the target molecules and the detection target molecules.Type: ApplicationFiled: September 1, 2009Publication date: June 10, 2010Applicant: Electronics and Telecommunications Research InstituteInventors: Ansoon KIM, Chil Seong AH, Chan Woo PARK, Jong-Heon YANG, Chang-Geun AHN, Taeyoub KIM, In Bok BAEK, Wanjoong KIM, Gun Yong SUNG, Seon Hee PARK
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Publication number: 20100141280Abstract: A biosensor reader and a biosensor reader system are provided. The biosensor reader has a field-effect transistor (FET) biosensor attached thereto, and the FET biosensor includes between electrodes a probe channel to which probe materials are immobilized. The biosensor reader analyzes an electrical conductivity change of the probe channel caused by the binding between the probe material and a target material contained in an analysis solution. The biosensor reader includes a measurement module and an output module. The measurement module connects the probe channel electrically to a reference resistance with a fixed resistance value by the attachment of the FET biosensor, measures a reference voltage drop across the reference resistance and a channel voltage drop across the probe channel, and analyzes an electrical conductivity change of the probe channel from the reference voltage drop and the channel voltage drop.Type: ApplicationFiled: September 25, 2009Publication date: June 10, 2010Applicant: Electronics and Telecommunications Research InstituteInventors: Jong-Heon YANG, Taeyoub KIM, Ansoon KIM, Chan Woo PARK, In Bok BAEK, Chil Seong AH, Chang-Geun AHN, Gun Yong SUNG, Seon Hee PARK