Abstract: Proposed is a precursor composition for forming a metal film including a zirconium compound represented by any one of Chemical Formulas 1 to 3 and a hafnium compound represented by any one of Chemical Formulas 4 to 6.

Abstract: In the case of a gas in which several gases are mixed, a type and concentration of the gas may be incorrectly measured when measured using only an optical band-pass filter. The invention of the present application is directed to providing a technology in which a plurality of broadband band-pass filters having overlapping regions are provided to calculate a magnitude of absorption for each wavelength band for light passing through each broadband band-pass filter, thereby identifying the presence of a gas of interest and the presence of a gas other than the gas of interest.

Abstract: Provided is a door lock. The door lock includes a door lock body installed on a door and having an opening/closing device; a memory to store a door lock identifier including a door recognition code and a door lock ID corresponding to the door recognition code; an antenna to sequentially receive a first RF signal and a second RF signal from a reader; and a control unit configured to transmit the door recognition code to the reader and configured to determine whether the door lock ID provided from the door lock management server through the reader matches the previously assigned door lock ID of the door lock identifier to control the opening/closing device.

Abstract: A resin matrix composition is provided in the present invention. The resin matrix composition includes an epoxy resin, a polysulfone engineering plastic, a modified polyetherimide and an amine curing agent. The modified polyetherimide is formed from a nucleophilic compound and polyetherimide. The nucleophilic compound has a nucleophile such as hydroxyl group, sulfhydryl group, carboxyl group and/or amine group. Therefore, a resin matrix with two phase separation of island phase and co-continuous phase is formed. The resin matrix can have both great flexural strength and toughness. Moreover, the resin matrix has suitable viscosity, such that it is appropriate for impregnating carbon fiber to produce prepreg and carbon fiber composites.

Abstract: A memory device, and a method of operating the memory device, includes a memory block in which a plurality of cell pages are coupled to each of word lines. The memory device also includes a peripheral circuit configured to adjust a time point at which a verify voltage is applied to a selected word line among the word lines according to an order of performing a program operation during a verify operation of a selected cell page. The memory device further includes a control logic circuit configured to transmit, to the peripheral circuit, an operation code for adjusting a time point at which the verify voltage is output.

Abstract: Proposed is a precursor composition for forming a metal film including a zirconium compound represented by any one of Chemical Formulas 1 to 3 and a hafnium compound represented by any one of Chemical Formulas 4 to 6.

Abstract: A precursor solution for thin-film deposition including a functional solvent selected from among liquid alkene and liquid alkyne capable of dissolving a metal halide at room temperature and a metal halide dissolved in the functional solvent and existing as a liquid at room temperature, thereby solving problems caused by halogen gas generated in a chamber during a deposition process and improving the uniformity of the thickness of a thin film.

Abstract: A precursor solution for thin-film deposition including a functional solvent selected from among liquid alkene and liquid alkyne capable of dissolving a metal halide at room temperature and a metal halide dissolved in the functional solvent and existing as a liquid at room temperature, thereby solving problems caused by halogen gas generated in a chamber during a deposition process and improving the uniformity of the thickness of a thin film.

Abstract: Disclosed herein is an apparatus and method for measuring a specific soil resistance for distribution grounding by a three-electrode method. The apparatus uses three electrodes to measure a specific soil resistance as well as an earth resistance based on a three-electrode method in specific soil resistance measurement that is the most basic but likely to be overlooked in a practical distribution work.

Abstract: A method includes: disposing a filter into a body of wastewater containing active sludge, the filter including a supporting member having an outlet, and a filter media enclosing the supporting member and supported by the supporting member so as to have a predetermined firm shape, the filter media including a non-woven substrate and a fibrous filtering layer attached to the non-woven substrate and having a pore diameter ranging from 0.001 to 15 ?m and a layer thickness ranging from 10 to 200 ?m, the fibrous filtering layer being made from fibers having a fiber diameter ranging from 20 to 1000 nm; and driving the wastewater to pass through the filter using a pump connected to the outlet of the supporting member of the filter.

Abstract: A wastewater treating system includes: a vessel defining a vessel space therein, the vessel space being partitioned into an activated sludge zone that is adapted to receive waste water and a body of an activated sludge therein, and a coarse filtering zone that is disposed downstream of and that is in fluid communication with the activated sludge zone for receiving bio-treated wastewater from the activated sludge zone; and a bed of biomass carriers colonized with microorganisms and disposed in the coarse filtering zone for further bio-treating the bio-treated wastewater from the activated sludge zone and for separating coarse suspended solids from the bio-treated wastewater in the coarse filtering zone.

Abstract: A brushless permanent magnet motor with unequal-width slots and its manufacturing method completes a design of a regular motor with equal-width slots, employs a single-layer centralized winding, increasing the width equally on left and right sides of a first type of teeth wound with a coil until a width Wt3 of a tooth tip equals to a width Wp of a magnetic pole, such that the stator slot opening shifts towards a second type of teeth with no coil, increasing a width of a first type of teeth with a coil equally on left and right sides until a coil pitch equals to a width Wp of a magnetic pole or a motor angle equals to 180°, and decreasing a width Wt2 of a second type of teeth with no coil equally on both left and right sides until a slot area Sa2 is greater than the original slot area Sa1 of a regular motor with equal-width slots to improve the motor efficiency and reliability for a variable speed operation.

Abstract: Provided is a picker for use in a handler, including at least one picker base, a row of nozzles provided to each of the picker base, and a detecting unit, provided to one side of each of the nozzle, for detecting if a packaged chip exists in a carrying hole on a user tray. The picker is capable of detecting if the packaged chip exists in a first row of the carrying holes on the user tray. And the picker is capable of placing the packaged chips into the first row of the carrying holes on the user tray and at the same time detecting if the packaged chip exists in a second row of the carrying holes on the user tray, when existence of the packaged chip is not detected on the first row of the carrying holes on the user tray.

Abstract: A method includes: disposing a filter into a body of wastewater containing active sludge, the filter including a supporting member having an outlet, and a filter media enclosing the supporting member and supported by the supporting member so as to have a predetermined firm shape, the filter media including a non-woven substrate and a fibrous filtering layer attached to the non-woven substrate and having a pore diameter ranging from 0.001 to 15 ?m and a layer thickness ranging from 10 to 200 ?m, the fibrous filtering layer being made from fibers having a fiber diameter ranging from 20 to 1000 nm; and driving the wastewater to pass through the filter using a pump connected to the outlet of the supporting member of the filter.

Abstract: A wastewater treating system includes: a vessel defining a vessel space therein, the vessel space being partitioned into an activated sludge zone that is adapted to receive waste water and a body of an activated sludge therein, and a coarse filtering zone that is disposed downstream of and that is in fluid communication with the activated sludge zone for receiving bio-treated wastewater from the activated sludge zone; and a bed of biomass carriers colonized with microorganisms and disposed in the coarse filtering zone for further bio-treating the bio-treated wastewater from the activated sludge zone and for separating coarse suspended solids from the bio-treated wastewater in the coarse filtering zone.

Abstract: A method for reducing a gate length bias is disclosed. The method utilizes an additional blanket ion implantation process to adjust the etching property of the undoped conductive layer. According to the present invention, a polysilicon layer is used to form NMOS and PMOS gate electrodes so that the gate length bias between the NMOS gate electrodes and the PMOS gate electrodes can be effectively reduced.

Abstract: The method for forming high voltage device combined with a mixed mode process use an un-doped polysilicon layer instead of the conventional polysilicon layer. In the high resistance area, the ion implant is not used until the source region and the drain region are formed. A resistor is formed by etching oxide-nitride-oxide layer and performing ion implant process by using BF2 radical to the un-doped polysilicon layer to control the resistance. Then multitudes of contact are formed, wherein the high dosage of BF2 implant would reduce resistance between contacts and resistor.

Abstract: A method for forming a high resistance resistor with an integrated high voltage device process is disclosed. First and second field oxide areas are formed on a substrate and an undoped first polysilicon layer is deposited. A first photoresist layer having a resistor pattern is formed on the first field oxide area and a first ion implant process is performed with the first photoresist layer as a mask which is then removed and an oxide nitride oxide (ONO) layer is formed on the first polysilicon layer. The ONO layer and the first polysilicon layer are etched to form a resistor on the first field oxide area and a first electrode of a capacitor on the second field oxide area. A second polysilicon layer is formed on the capacitor ONO layer as a second electrode of the capacitor. A second photoresist layer is formed on the substrate, the resistor and the capacitor and has an opening pattern to expose the resistor. The ONO layer is removed from the resistor.

Abstract: The present invention provides a method for integrating the fabrication of a sensor and a high voltage devices. The N conductive type sensor has a P conductive type doped region in the substrate of the sensor active region to effectively reduce the leakage at edges of the field oxide. Furthermore, there are the P conductive type field and the P conductive type well used as isolations for the sensor and these isolations can prevent blooming. Between these isolations, high voltage devices can be simultaneously formed thereon.

Abstract: A method for forming enhanced field oxide (FOX) region of low voltage devices in a high voltage process is disclosed. The method includes providing a semiconductor structure comprising a substrate, two field oxide regions on the substrate, a well between the two field oxide regions in the substrate and a silicon nitride layer between the two field oxide regions above the well. As a key step, nitrogen is implanted into the semiconductor structure, and the silicon nitride layer is then removed. Then, a gate oxide layer on the well and silicon oxynitride layer on the field oxide regions are all formed in-situ.