Abstract: A hydrogen water generator includes a water supply part including a water supply passage including an inlet and an outlet; a water tank coupled to the outlet for receiving and storing water supplied to the inlet; an electrode module coupled to the water tank for generating hydrogen to generate hydrogen water in the water tank; and a water outlet for discharging the hydrogen water stored in the water tank. The water supply passage includes a delayed discharge outlet which is a portion of the water supply passage having a smallest cross-sectional area of a flow path in the water supply passage.

Abstract: A treadmill may include two separate left and right belts rotating around two sets of rollers, four legs having an adjustable height via air suspension to customize an inclination of the treadmill, a thermoelectric assembly, a fragrance assembly having a rotating fragrance cartridge to emit various smells toward a user of the treadmill, a display on which exercise programs are played, and an attachment module having a dispensing tray on which treats are dispensed. A handle of the treadmill may have a sensor to sense a height and front-rear position, and a belt divider provided between the left and right belts may have position or proximity sensors to sense a left-right position. An inclination of the treadmill may be automatically adjusted according to positions detected by the sensors, and the fragrance assembly, attachment module, and inclination may be automatically operated in accordance with an exercise program played on the display.

Abstract: A hydrogen water generator includes a hydrogen water discharger including a water outlet, a seating unit disposed under the water outlet and forming a seating surface, a water container seatable on the seating surface and including an opening at an upper end of the water container, and a first magnetic body at a lower end of the water container, and the seating unit including a second magnetic body. When the water container is seated on the seating surface, the first magnetic body and the second magnetic body are attractable to each other to position the water container with respect to the water outlet.

Abstract: Example semiconductor devices and methods for fabricating a semiconductor device are disclosed. An example device may include a substrate, a first semiconductor pattern spaced apart from the substrate, a first antioxidant pattern extending along a bottom surface of the first semiconductor pattern and spaced apart from the substrate, and a field insulating film on the substrate. The insulating film may cover at least a part of a side wall of the first semiconductor pattern. The first antioxidant pattern may include a first semiconductor material film doped with a first impurity.

Abstract: A hydrogen water generator includes a water tank for receiving and storing water, an electrode module coupled to the water tank for generating hydrogen water, a movable water discharger, a transfer tube for transferring the hydrogen water from the water tank to the movable water discharger, a sensor, and a controller. The controller moves the movable water discharger from an original position to a height with respect to a water container based on a sensing by the sensor.

Abstract: A display apparatus includes: a first substrate having a front surface and a rear surface; a first display layer disposed on the front surface of the first substrate, the first display layer configured to emit light in a front direction; a second display layer disposed on the rear surface of the first substrate, the second display layer configured to emit light in a rear direction; and a pressure sensor disposed on the rear surface of the first substrate, the pressure sensor configured to sense a pressure of a touch of a user.

Abstract: A method includes forming an active pattern on a substrate, the active pattern comprising first semiconductor patterns and second semiconductor patterns, which are alternately stacked, forming a capping pattern on a top surface and a sidewall of the active pattern, performing a deposition process on the capping pattern to form an insulating layer, and forming a sacrificial gate pattern intersecting the active pattern on the insulating layer. The capping pattern has a crystalline structure and is in physical contact with sidewalls of the first semiconductor patterns and sidewalls of the second semiconductor patterns.

Abstract: An aspect of the present invention relates to a high-strength steel, having excellent fracture initiation resistance and fracture propagation arrestability at low temperature.

Abstract: A semiconductor device including an active region extending in a first direction on a substrate; channel layers vertically spaced apart on the active region; a gate structure extending in a second direction and intersecting the active region, the gate structure surrounding the channel layers; a source/drain region on the active region in contact with the channel layers; and a contact plug connected to the source/drain region, wherein the source/drain region includes a first epitaxial layer on side surfaces of the channel layers and including a first impurity; a second epitaxial layer on the first epitaxial layer and including the first impurity and a second impurity; and a third epitaxial layer on the second epitaxial layer and including the first impurity, and in a horizontal sectional view, the second epitaxial layer includes a peripheral portion having a thickness in the first direction that increases along the second direction.

Abstract: Example semiconductor devices and methods for fabricating a semiconductor device are disclosed. An example device may include a substrate, a first semiconductor pattern spaced apart from the substrate, a first antioxidant pattern extending along a bottom surface of the first semiconductor pattern and spaced apart from the substrate, and a field insulating film on the substrate. The insulating film may cover at least a part of a side wall of the first semiconductor pattern. The first antioxidant pattern may include a first semiconductor material film doped with a first impurity.

Abstract: A display apparatus includes: a first substrate having a front surface and a rear surface; a first display layer disposed on the front surface of the first substrate, the first display layer configured to emit light in a front direction; a second display layer disposed on the rear surface of the first substrate, the second display layer configured to emit light in a rear direction; and a pressure sensor disposed on the rear surface of the first substrate, the pressure sensor configured to sense a pressure of a touch of a user.

Abstract: A diode display includes a substrate having a first island and a second island spaced apart from each other, a first pixel disposed on the first island, and a second pixel disposed on the second island. The first pixel includes a first base layer, a first transistor on the first base layer, a first light emitting element electrically connected to the first transistor, and a first encapsulation layer covering the first light emitting element. The second pixel includes a second base layer, a second transistor on the second base layer, a second light emitting element connected to the second transistor, and a second encapsulation layer covering the second light emitting element.

Abstract: A semiconductor device includes a substrate including a fin-type active region, the fin-type active region extending in a first direction; a plurality of channel layers on the fin-type active region, the plurality of channel layers including an uppermost channel layer, a lowermost channel layer, and an intermediate channel layer isolated from direct contact with each other in a direction perpendicular to an upper surface of the substrate; a gate electrode surrounding the plurality of channel layers and extending in a second direction intersecting the first direction; a gate insulating film between the plurality of channel layers and the gate electrode; and source/drain regions electrically connected to the plurality of channel layers. In a cross section taken in the second direction, the uppermost channel layer has a width greater than a width of the intermediate channel layer.

Abstract: A method includes forming an active pattern on a substrate, the active pattern comprising first semiconductor patterns and second semiconductor patterns, which are alternately stacked, forming a capping pattern on a top surface and a sidewall of the active pattern, performing a deposition process on the capping pattern to form an insulating layer, and forming a sacrificial gate pattern intersecting the active pattern on the insulating layer. The capping pattern has a crystalline structure and is in physical contact with sidewalls of the first semiconductor patterns and sidewalls of the second semiconductor patterns.

Abstract: A diode display includes a substrate having a first island and a second island spaced apart from each other, a first pixel disposed on the first island, and a second pixel disposed on the second island. The first pixel includes a first base layer, a first transistor on the first base layer, a first light emitting element electrically connected to the first transistor, and a first encapsulation layer covering the first light emitting element. The second pixel includes a second base layer, a second transistor on the second base layer, a second light emitting element connected to the second transistor, and a second encapsulation layer covering the second light emitting element.

Abstract: The present invention relates to a steel material for pressure vessels, offshore structures and the like and, more specifically, to a high-strength steel material having excellent low-temperature strain aging impact properties and a method for manufacturing same.