Abstract: A method of manufacturing a thin film transistor array panel is provided, which includes: depositing an amorphous silicon layer on an insulating substrate; converting the amorphous silicon layer to a polysilicon layer by a plurality of laser shots using a mask; forming a gate insulating layer on the polysilicon layer; forming a plurality of gate lines on the gate insulating layer; forming a first interlayer insulating layer on the gate lines; forming a plurality of data lines on the first interlayer insulating layer; forming a second interlayer insulating layer on the data lines; and forming a plurality of pixel electrodes on the second interlayer insulating layer, wherein the mask comprises a plurality of transmitting areas and a plurality of blocking areas arranged in a mixed manner.

Abstract: The present invention relates to the use of a dibenzocyclooctane lignan derivative of the following general formula (I) for treatment of neurodegenerative disorders: wherein R1 is H or C1-4 lower alkyl; R2, R3, R4 and R5 are respectively H, OH, C1-4 lower alkyl, C1-4 lower alkoxy, or R2 and R3 or R4 and R5 are respectively combined to form the group of —OCH2O—. Pharmaceutical preparations containing the dibenzocyclooctane lignan derivative as the active ingredient also are disclosed.

Abstract: The invention relates to pharmaceutical preparations containing a dibenzocyclooctane lignan derivative for prevention and treatment of neurodegenerative disease.