Patents by Inventor In H. Kim

In H. Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • THERMOPLASTIC POLYURETHANE COMPOSITION
    Publication number: 20220340751
    Abstract: The invention relates to an article made from a thermoplastic polyurethane composition having that has high flex modulus, low density, and is capable of withstanding repeated cyclic deformation. The thermoplastic polyurethane composition is formed from the reaction product of a polyol component, which includes a blend of a polyether polyol, such as poly(tetramethylene ether glycol), and polybutadiene diol, a diisocyanate component, and a chain extender component.
    Type: Application
    Filed: September 10, 2020
    Publication date: October 27, 2022
    Applicant: Lubrizol Advanced Materials, Inc.
    Inventors: Vahab Solouki Bonab, Kenneth H. Kim, Aditi Shankar
  • SURGICAL APPARATUS
    Publication number: 20220338893
    Abstract: The disclosure provides a surgical apparatus comprising: a steerable member that is bendable and comprises a plurality of bending segments with channels therein; and a plurality of bending actuation wires that are arranged to pass through the steerable member and cause the steerable member to bend, the steerable member comprising at least one outwardly opening lumen through which the bending actuation wires pass.
    Type: Application
    Filed: June 30, 2022
    Publication date: October 27, 2022
    Inventors: Daniel H. KIM, Dong Suk SHIN, Taeho JANG, Yongman PARK
  • GUIDEWIRE CONTROLLER CASSETTE AND USING METHOD THEREOF
    Publication number: 20220313962
    Abstract: Provided herein as a guidewire controller cassette for positioning a guidewire within a patient body, including a housing having an interior space; a translational module received within the interior space and having an entry side, an opposed exit side and a lateral wall being disposed therebetween, the translational module comprising a first guidewire path extending between the entry side and the exit side and configured to move the guidewire translationally along the first guidewire path; and a rotational module received within the interior space and mounted at the lateral wall, the rotational module comprising an opening for receiving the proximal end of the guidewire, a rotating axis allowing the proximal end of the guidewire being rotated thereabout, and a second guidewire path which is a loop path extending out from the opening to the entry side.
    Type: Application
    Filed: March 30, 2022
    Publication date: October 6, 2022
    Inventors: Daniel H. KIM, Dong Suk SHIN
  • Germanium-silicon-tin (GeSiSn) heterojunction bipolar transistor devices
    Patent number: 11456374
    Abstract: The methods of manufacture of GeSiSn heterojunction bipolar transistors, which include light emitting transistors and transistor lasers and photo-transistors and their related structures are described herein. Other embodiments are also disclosed herein.
    Type: Grant
    Filed: May 28, 2019
    Date of Patent: September 27, 2022
    Inventor: Matthew H. Kim
  • Apparatuses and methods including memory cells, digit lines, and sense amplifiers
    Patent number: 11450377
    Abstract: Apparatuses and methods including memory cells, digit lines, and sense amplifiers are described. An example apparatus includes a pair of digit lines including first and second digit lines, a sense amplifier coupled to the pair of digit lines and configured to amplify a voltage difference between the first and second digit lines when activated, and a plurality of memory cells. A memory cell of the plurality of memory cells includes a first node coupled to the first digit line and includes a second node coupled to the second digit line. The memory cell of the plurality of memory cells is configured to store a respective voltage and/or charge at a respective cell node and couple the respective voltage and/or charge to the first node when activated.
    Type: Grant
    Filed: July 29, 2020
    Date of Patent: September 20, 2022
    Assignee: Micron Technology, Inc.
    Inventor: Tae H. Kim
  • Doors with adaptive positioning
    Patent number: 11446989
    Abstract: Doors on a vehicle may be controlled by a door positioning system that moves the doors freely and fluidly relative to the body of the vehicle. The doors may include front and rear doors on each side of the vehicle. The door positioning system may control the movement and positioning of each door using a door mechanism coupled between the door and the body of the vehicle. The door positioning system may determine a position or path of motion for each door based on sensor data and user input. The door positioning system may issue corresponding control signals to actuators in the door mechanism to position the door accordingly. For example, the front door may slide open at an angle to accommodate an angled tire. Front and rear doors may open in opposite directions to create a large, unobstructed space for passengers to enter and exit the vehicle.
    Type: Grant
    Filed: August 16, 2019
    Date of Patent: September 20, 2022
    Assignee: Apple Inc.
    Inventors: Matthew L. Brown, Phillip Michael Hobson, John Raff, Sung H. Kim, Russell C. Mead, Jr., Ronald J. Smith
  • Vertical access line multiplexor
    Patent number: 11443780
    Abstract: An access line multiplexor can be formed under vertically stacked tiers of memory cells. The multiplexor can include a first transistor coupled to a vertical access line, to a horizontal access line, and to a second transistor. The second transistor can be coupled to a power supply. The transistors can be n-type metal oxide semiconductor transistors.
    Type: Grant
    Filed: February 10, 2021
    Date of Patent: September 13, 2022
    Assignee: Micron Technology, Inc.
    Inventors: Yuan He, Beau D. Barry, Tae H. Kim, Christopher J. Kawamura
  • MULTIPLEXORS UNDER AN ARRAY OF MEMORY CELLS
    Publication number: 20220277784
    Abstract: A sense amplifier can be formed outside of/horizontally adjacent to an array of vertically stacked tiers of memory cells. Memory cells can be sensed via multiplexors formed under the array that can operate to couple vertical sense lines (to which the memory cells are coupled) to horizontal sense lines (to which the sense amplifier is coupled).
    Type: Application
    Filed: May 17, 2022
    Publication date: September 1, 2022
    Inventors: Yuan He, Tae H. Kim
  • Processes For Reducing Environmental Availability Of Environmental Pollutants
    Publication number: 20220274145
    Abstract: This invention provides processes for reducing the environmental availability of one or more environmental pollutants in solids, liquids, and combinations of solids and liquids.
    Type: Application
    Filed: September 16, 2020
    Publication date: September 1, 2022
    Inventors: Qunhui Zhou, Se H. Kim, Jon E. Miller, Sascha J. Welz, Zhongxin Ge
  • METHODS OF MANUFACTURE OF ADVANCED WAFER BONDED HETEROJUNCTION BIPOLAR TRANSISTORS
    Publication number: 20220278228
    Abstract: Methods of manufacturing heterojunction bipolar transistors are described herein. An exemplary method can include providing an emitter/base stack comprising a substrate, a base over the substrate, and/or an emitter over the base. The exemplary method further can include forming a collector. The exemplary method also can include wafer bonding the base to the collector. Other embodiments are also disclosed herein.
    Type: Application
    Filed: May 9, 2022
    Publication date: September 1, 2022
    Inventor: Matthew H. Kim
  • Processes For Reducing Environmental Availability of Environmental Pollutants
    Publication number: 20220274089
    Abstract: This invention provides processes for reducing the environmental availability of one or more environmental pollutants in solids, liquids, and combinations of solids and liquids.
    Type: Application
    Filed: September 16, 2020
    Publication date: September 1, 2022
    Inventors: Qunhui Zhou, Se H. Kim, Jon E. Miller, Sascha J. Welz
  • Surgical apparatus
    Patent number: 11419691
    Abstract: The disclosure provides a surgical apparatus comprising: a steerable member that is bendable and comprises a plurality of bending segments with channels therein; and a plurality of bending actuation wires that are arranged to pass through the steerable member and cause the steerable member to bend, the steerable member comprising at least one outwardly opening lumen through which the bending actuation wires pass.
    Type: Grant
    Filed: June 28, 2018
    Date of Patent: August 23, 2022
    Assignees: THE BOARD OF REGENTS OF THE UNIVERSITY OF TEXAS SYSTEM, COLUBRISMX, INC.
    Inventors: Daniel H. Kim, Dong Suk Shin, Taeho Jang, Yongman Park, Jeihan Lee, Hongmin Kim, Kihoon Nam, Seokyung Han
  • METHODS OF FORMING AN ELECTRONIC DEVICE COMPRISING DEUTERIUM-CONTAINING DIELECTRIC MATERIALS AND RELATED ELECTRONIC DEVICES AND SYSTEMS
    Publication number: 20220262919
    Abstract: A method of forming an electronic device comprising forming an initial dielectric material comprising silicon-hydrogen bonds. A deuterium source gas and an oxygen source gas are reacted to produce deuterium species, and the initial dielectric material is exposed to the deuterium species. Deuterium of the deuterium species is incorporated into the initial dielectric material to form a deuterium-containing dielectric material. Additional methods are also disclosed, as are electronic devices and systems comprising the deuterium-containing dielectric material.
    Type: Application
    Filed: February 16, 2021
    Publication date: August 18, 2022
    Inventors: Manzar Siddik, Terry H. Kim, Kyubong Jung
  • Systems and methods for level down shifting drivers
    Patent number: 11417391
    Abstract: A memory device includes a level down shifting driver circuit. The level down shifting driver circuit include input circuitry having at least one input port, and a cross-junction circuitry electrically coupled to the input circuitry and configured to receive a first signal from the input circuitry to drive one or more devices included in the cross-junction circuitry. The level down shifting driver circuit further includes an output drive circuitry electrically coupled to the cross-junction circuitry and configured to receive a second signal from the cross-junction circuitry, wherein the output drive circuitry comprises an output line configured to deliver a first voltage output based on a first input voltage received by the input circuitry, and a second voltage output based on a second input voltage received by the input circuitry.
    Type: Grant
    Filed: August 28, 2020
    Date of Patent: August 16, 2022
    Assignee: Micron Technology, Inc.
    Inventor: Tae H. Kim
  • VERTICAL ACCESS LINE MULTIPLEXOR
    Publication number: 20220254388
    Abstract: An access line multiplexor can be formed under vertically stacked tiers of memory cells. The multiplexor can include a first transistor coupled to a vertical access line, to a horizontal access line, and to a second transistor. The second transistor can be coupled to a power supply. The transistors can be n-type metal oxide semiconductor transistors.
    Type: Application
    Filed: February 10, 2021
    Publication date: August 11, 2022
    Inventors: Yuan He, Beau D. Barry, Tae H. Kim, Christopher J. Kawamura
  • SUB WORD LINE DRIVER
    Publication number: 20220254405
    Abstract: Methods, systems, and devices for driving word lines using sub word line drivers are described. A memory array may include a plurality of sub-arrays arranged with gaps in between. Word lines may be arranged across multiple sub-arrays and drive access transistors that are used to selectively access rows (e.g., rows of memory cells) within the sub-arrays. In some examples, signals applied to selection devices driving the word lines may be over-driven for a duration at or near the desired transitions of the word line, and some signals may be driven to a relatively high level for a duration around the high and low transitions of a global row line. Whether a signal is over driven or driven to a relatively high level may depend on the type or types of transistors used in each word line driver.
    Type: Application
    Filed: March 17, 2022
    Publication date: August 11, 2022
    Inventors: Tae H. Kim, Brenton P. Van Leeuwen
  • SENSING SCHEME FOR A MEMORY WITH SHARED SENSE COMPONENTS
    Publication number: 20220254397
    Abstract: Methods, systems, and devices for sensing a memory with shared sense components are described. A device may activate a word line and a plate line each coupled with a set of memory cells, where each memory cell of the set of memory cells is coupled with a respective digit line of a set of digit lines. The device may activate a set of switching components to couple each digit line of the set of digit lines with a respective sense component of a set of sense components, where each switching component of the set of switching components is coupled with a respective memory cell of the set of memory cells. The device may sense the set of memory cells based on activating the word line and the plate line and based on coupling the set of digit lines with the set of sense components.
    Type: Application
    Filed: February 9, 2021
    Publication date: August 11, 2022
    Inventors: Yuan He, Tae H. Kim, Scott James Demer
  • Multiplexors under an array of memory cells
    Patent number: 11386948
    Abstract: A sense amplifier can be formed outside of/horizontally adjacent to an array of vertically stacked tiers of memory cells. Memory cells can be sensed via multiplexors formed under the array that can operate to couple vertical sense lines (to which the memory cells are coupled) to horizontal sense lines (to which the sense amplifier is coupled).
    Type: Grant
    Filed: February 10, 2021
    Date of Patent: July 12, 2022
    Assignee: Micron Technology, Inc.
    Inventors: Yuan He, Tae H. Kim
  • Multiplexor for a semiconductor device
    Patent number: 11380387
    Abstract: A memory device can comprise an arrays of memory cells comprising a plurality of vertically stacked tiers of memory cells, a respective plurality of horizontal access lines coupled to each of the plurality of tiers of memory cells, and a plurality of vertical sense lines coupled to each of the plurality of tiers of memory cells. The array of memory cells can further comprise a plurality of multiplexors each coupled to a respective vertical sense line, wherein each of the plurality of multiplexors includes a first portion and a second portion, the first portion is coupled to the array of memory cells and the second portion is formed on a substrate material. The array of memory cells can further comprise a semiconductor under the array (SuA) circuitry comprising a plurality of sense amplifiers, each sense amplifier coupled to a respective subset of the plurality of multiplexors.
    Type: Grant
    Filed: March 23, 2021
    Date of Patent: July 5, 2022
    Assignee: Micron Technology, Inc.
    Inventors: Yuan He, Tae H. Kim
  • Eyeglasses
    Patent number: D961657
    Type: Grant
    Filed: September 30, 2020
    Date of Patent: August 23, 2022
    Assignee: Oakley, Inc.
    Inventors: Joon H. Kim, Nicolas Adolfo Garfias