Abstract: A semiconductor device may include a calibration circuit and an output circuit. The calibration circuit may perform a calibration operation for setting a resistance value of the output circuit. The calibrations circuit may perform the calibration operation by being coupled, through a signal transmission line, to a reference resistor provided in another semiconductor device.

Abstract: A transmitting device includes a calibration circuit and a transmission circuit. The calibration circuit generates calibration codes by performing a calibration operation. The calibration circuit also generates compensation calibration codes by increasing or decreasing values of the calibration codes according to whether a number of codes among the calibration codes having a predetermined level is greater than or equal to a threshold value. The transmission circuit drives a signal transmission line based on an input signal and the compensation calibration codes.

Abstract: A semiconductor device may include a calibration circuit and an output circuit. The calibration circuit may perform a calibration operation for setting a resistance value of the output circuit. The calibrations circuit may perform the calibration operation by being coupled, through a signal transmission line, to a reference resistor provided in another semiconductor device.

Abstract: A data transmission circuit includes a data bus inversion encoding circuit configured to compare previous output data and current output data, invert or non-invert the current output data to control the number of data transitions; and transmitters configured to drive signal transmission lines based on outputs of the data bus inversion encoding circuit.

Abstract: A circuit may include a transmitter for generating a signal indicative of input data, an on-chip channel for transmitting the signal from the transmitter, and a receiver comprising a receiving terminal that has a negative resistance value as input resistance of the receiving terminal, the receiver generating a signal indicative of recovered data based on the transmitted signal through the on-chip channel. The circuit may recycle a portion of charge stored in the on-chip channel using charge recycling, and the charge recycling is associated with the negative resistance value of the input resistance.

Abstract: A serializer may be provided. The serializer may include a first data output circuit and a second data output circuit. The first data output circuit may provide first data to an output node in synchronization with a first phase clock and a second phase clock. The second data output circuit may provide second data to the output node in synchronization with the second phase clock and a third phase clock. The first data output circuit may perform a precharge operation or an emphasis operation for the second data output circuit, in synchronization with a third phase clock.

Abstract: A data transmission and reception system may include: a data transmission apparatus configured to generate N Tx signals having discrete levels using N binary data, and output the N Tx signals to N single-ended signal lines, respectively, where N is a natural number equal to or larger than 2; and a data reception apparatus configured to receive the N Tx signals transmitted in parallel through the single-ended signal lines, and restore the N binary data by comparing the received N Tx signals to each other.

Abstract: A transmission device may include a main driver configured to drive an output node based on an input signal, and may generate an output signal with multiple levels. The transmission device may include a variable emphasis driver configured to drive the output node with various driving forces based on transition information of the input signal.

Abstract: A composition for forming a silica based layer includes a silicon-containing compound including polysilazane, polysiloxazane, or a combination thereof and one or more kinds of solvent, and having a turbidity increasing rate of less than or equal to about 0.13.

Abstract: A system includes a data transmission unit, a termination resistor and a data reception unit. The data transmission unit may drive a data transmission line based on data, and drive the data transmission line to a voltage level corresponding to a termination voltage during a specified operation period. The termination resistor may be coupled between the data transmission line and a termination node. The data reception unit may receive a signal transmitted through the data transmission line.

Abstract: A serializer may be provided. The serializer may include a first data output circuit and a second data output circuit. The first data output circuit may provide first data to an output node in synchronization with a first phase clock and a second phase clock. The second data output circuit may provide second data to the output node in synchronization with the second phase clock and a third phase clock. The first data output circuit may perform a precharge operation or an emphasis operation for the second data output circuit, in synchronization with a third phase clock.

Abstract: A system includes a data transmission unit, a termination resistor and a data reception unit. The data transmission unit may drive a data transmission line based on data, and drive the data transmission line to a voltage level corresponding to a termination voltage during a specified operation period. The termination resistor may be coupled between the data transmission line and a termination node. The data reception unit may receive a signal transmitted through the data transmission line.

Abstract: A semiconductor apparatus may include a receiver circuit and a termination circuit. The receiver circuit may be coupled to a receiving node, and configured to receive a signal transmitted through a signal transmission line. The termination circuit may be configured to be turned on to set a resistance value of the receiving node in a transition period of the signal, and turned off in a stabilization period of the signal.

Abstract: A data transmission and reception system may include: a data transmission apparatus configured to generate N Tx signals having discrete levels using N binary data, and output the N Tx signals to N single-ended signal lines, respectively, where N is a natural number equal to or larger than 2; and a data reception apparatus configured to receive the N Tx signals transmitted in parallel through the single-ended signal lines, and restore the N binary data by comparing the received N Tx signals to each other.

Abstract: A data transmission device may include a calibration circuit and an output driver. The calibration circuit may generate a pull-up calibration voltage and a pull-down calibration voltage. The resistance value of the output driver may be changed based on the pull-up calibration voltage and the pull-down calibration voltage.

Abstract: An impedance calibration device for a semiconductor device includes a process sensor that detects a process condition for the semiconductor device and outputs a process signal, a temperature monitoring sensor that detects a temperature of the semiconductor device and outputs a temperature signal, a converter that converts the process signal and the temperature signal into a digital signal, and a code generation circuit that generates and outputs a driving code for controlling a level of a voltage at an output node according to the digital signal of the converter and a data signal. The impedance calibration device further includes an output driver that pulls up or pulls down the voltage at the output node according to the driving code.

Abstract: A serializer may be provided. The serializer may include a first data output circuit and a second data output circuit. The first data output circuit may provide first data to an output node in synchronization with a first phase clock and a second phase clock. The second data output circuit may provide second data to the output node in synchronization with the second phase clock and a third phase clock. The first data output circuit may perform a precharge operation or an emphasis operation for the second data output circuit, in synchronization with a third phase clock.

Abstract: A receiver circuit may be provided. The receiver circuit may include a delay circuit and a synchronization circuit. The delay circuit may variably delay a data strobe signal based on a delay select signal. The synchronization circuit may generate internal data from data in synchronization with the variably delayed data strobe signal.

Abstract: A polymer includes a structural unit represented by Chemical Formula 1 and an organic layer composition including the same. wherein in Chemical Formula 1, A is a carbon cyclic group including at least one hetero atom, B is one of groups in Group 1, where Ar1 to Ar4, R11 to R14, L and m are as defined in the specification and * is a linking point.

Abstract: A data transmission and reception system may include: a data transmission apparatus configured to generate N Tx signals having discrete levels using N binary data, and output the N Tx signals to N single-ended signal lines, respectively, where N is a natural number equal to or larger than 2; and a data reception apparatus configured to receive the N Tx signals transmitted in parallel through the single-ended signal lines, and restore the N binary data by comparing the received N Tx signals to each other.