Abstract: Disclosed are a semiconductor manufacturing process capable of preventing residues from remaining, preventing a pattern from collapsing, controlling selectivity, and optimizing surface roughness, a semiconductor device manufactured through the semiconductor manufacturing process, and a substrate processing apparatus configured to perform the semiconductor manufacturing process. The semiconductor manufacturing process is performed to remove an oxide-nitride-oxide (ONO) layer formed on an outer side of a vertical layer in a horizontal space between a substrate and a base layer in a semiconductor pattern.

Abstract: Disclosed are a substrate processing apparatus and a substrate processing method. The substrate processing apparatus includes a chamber including a processing space defined therein, a substrate support unit configured to support a substrate in the processing space, a microwave unit configured to supply microwaves to the processing space, a window member disposed below the microwave unit and configured to transmit the microwaves supplied from the microwave unit, a heat transfer plate disposed in the processing space so as to be spaced a predetermined distance from the window member and configured to be heated by the microwaves supplied to the processing space and to transfer heat to the substrate, and a controller configured to control the microwave unit.

Abstract: Disclosed are a substrate treating apparatus and a fluid supply unit that reduce the outer diameter while preventing condensation from occurring even without wrapping a pipe supplying a refrigerant with a heat insulating material. The substrate treating apparatus includes: a process chamber having a treatment space for treating a substrate; an inner pipe connected to the process chamber and for supplying a heat exchange fluid to an interior of the process chamber; a cooler connected to the inner pipe, and for cooling the heat exchange fluid and supplying the cooled heat exchange fluid to the inner pipe; an outer pipe disposed on an outer side of the inner pipe while surrounding the inner pipe to form a suction space between the inner pipe and the outer pipe; an intake part connected to the suction space, and for sucking the suction space; and a spacing maintaining part disposed in the suction space, and for maintaining a spacing distance between the inner pipe and the outer pipe.

Abstract: A camera includes a lens barrel, a holder, a filter disposed in the holder, a circuit board having an aperture, a reinforcing member including a first region corresponding to the aperture and a second region in which the circuit board is disposed, and an image sensor disposed in the first region of the reinforcing member. The first region of the reinforcing member includes a protruding part protruding farther than the second region of the reinforcing member. The image sensor is disposed on the upper surface of the protruding part.

Abstract: Disclosed is a hydrogen sensor having an integrated structure, the sensor being usable even in poor conditions, having a greatly reduced volume, minimizing the influence of humidity, and facilitating mass production thereof at low cost.

Abstract: A camera includes a lens barrel, a holder, a filter disposed in the holder, a circuit board having an aperture, a reinforcing member including a first region corresponding to the aperture and a second region in which the circuit board is disposed, and an image sensor disposed in the first region of the reinforcing member. The first region of the reinforcing member includes a protruding part protruding farther than the second region of the reinforcing member. The image sensor is disposed on the upper surface of the protruding part.

Abstract: A camera includes a lens barrel, a holder, a filter disposed in the holder, a circuit board having an aperture, a reinforcing member including a first region corresponding to the aperture and a second region in which the circuit board is disposed, and an image sensor disposed in the first region of the reinforcing member. The first region of the reinforcing member includes a protruding part protruding farther than the second region of the reinforcing member. The image sensor is disposed on the upper surface of the protruding part.

Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a chamber having an inner space; a separation unit provided at the inner space and configured to be combined with the chamber to divide the inner space into a plurality of treating spaces and a transfer space; a plurality of support units provided at each of the plurality of treating spaces and configured to support a substrate; a plurality of gas supply units provided at each of the plurality of treating spaces and configured to supply a process gas to the substrate supported on the plurality of support units; and a transfer unit provided at the transfer space and configured to transfer the substrate between the plurality of treating spaces.

Abstract: A lens system for LiDAR is proposed. The lens system includes: a lens part comprising a plurality of lenses to converge light provided from the light source; and a filter part included in the lens part and configured to transmit the light having a specific wavelength or the light belonging to a specific wavelength band, wherein the filter part is arranged at a specific position of the lens part such that an angle of light incident on the filter part is between 0 and 25 degrees. Accordingly, the lens system for lidar with high efficiency, high resolution, and high performance is provided by arranging the filter part at the position where the angle of light incident inside the lens part composed of the plurality of lenses is minimized.

Abstract: A camera includes a lens barrel, a holder, a filter disposed in the holder, a circuit board having an aperture, a reinforcing member including a first region corresponding to the aperture and a second region in which the circuit board is disposed, and an image sensor disposed in the first region of the reinforcing member. The first region of the reinforcing member includes a protruding part protruding farther than the second region of the reinforcing member. The image sensor is disposed on the upper surface of the protruding part.

Abstract: An embodiment comprises: a lens barrel; a holder; a filter disposed in the holder; a circuit board having an aperture; a reinforcing member including a first region corresponding to the aperture and a second region in which the circuit board is disposed; and an image sensor disposed in the first region of the reinforcing member, wherein the first region of the reinforcing member includes a protruding part protruding farther than the second region of the reinforcing member, and the image sensor is disposed on the upper surface of the protruding part.

Abstract: An embodiment comprises: a lens barrel; a holder; a filter disposed in the holder; a circuit board having an aperture; a reinforcing member including a first region corresponding to the aperture and a second region in which the circuit board is disposed; and an image sensor disposed in the first region of the reinforcing member, wherein the first region of the reinforcing member includes a protruding part protruding farther than the second region of the reinforcing member, and the image sensor is disposed on the upper surface of the protruding part.

Abstract: In a method of processing a thin layer according to an embodiment, a substrate having a processing target layer is provided into a polishing module of a thin layer processing apparatus. A chemical mechanical polishing process using a polishing slurry is performed on the processing target layer. The substrate is cleaned using a cleaning slurry.

Abstract: Implementations of the disclosed technology provide an electronic device including a semiconductor memory and a method for fabricating the same, in which processes are easily performed and the characteristics of a variable resistance element are improved. An electronic device according to an implementation of the disclosed technology is an electronic device including a semiconductor memory, wherein the semiconductor memory includes: a substrate; a conductive contact plug formed over the first conductive layer and including a stack of a conductive low-resistance structure and a conductive planarizing layer; and a variable resistance pattern coupled to the contact plug, wherein the low-resistance structure comprises a diffusion barrier layer, a low-resistance material layer and a gap-fill layer.

Abstract: A method of manufacturing a semiconductor device includes forming a stacked structure including at least one interconnection pattern layer and at least one contact plug on over a substrate, forming an interlayer insulation material layer over an uppermost interconnection pattern layer or an uppermost contact plug of the stacked structure, patterning the interlayer insulation layer to form an interlayer insulation layer including one or more openings that expose the uppermost interconnection pattern layer or the uppermost contact plug, forming a metal nitride thin film along a surface of a resulting structure of the interlayer insulation layer, forming a metal thin film over the metal nitride thin film by filling at least the remaining portions of the one or more openings after the metal nitride thin film is formed, and planarizing the metal thin film and the metal nitride thin film using chemical mechanical polishing.

Abstract: An electronic device is provided. An electronic device according to an implementation of the disclosed technology is an electronic device including a semiconductor memory, wherein the semiconductor memory includes: a substrate including a first region in which a plurality of memory cells are disposed and a second region adjacent to the first region; a first interlayer insulating layer disposed over the substrate; a plurality of first memory cells penetrating through the first interlayer insulating layer in the first region, an uppermost portion of each memory cell of the first memory cells having a first conductive carbon-containing pattern; and a first insulating carbon-containing pattern located over the first interlayer insulating layer in the second region.

Abstract: In a method of processing a thin layer according to an embodiment, a substrate having a processing target layer is provided into a polishing module of a thin layer processing apparatus. A chemical mechanical polishing process using a polishing slurry is performed on the processing target layer. The substrate is cleaned using a cleaning slurry.

Abstract: An electronic device is provided. An electronic device according to an implementation of the disclosed technology is an electronic device including a semiconductor memory, wherein the semiconductor memory includes: a substrate including a first region in which a plurality of memory cells are disposed and a second region adjacent to the first region; a first interlayer insulating layer disposed over the substrate; a plurality of first memory cells penetrating through the first interlayer insulating layer in the first region, an uppermost portion of each memory cell of the first memory cells having a first conductive carbon-containing pattern; and a first insulating carbon-containing pattern located over the first interlayer insulating layer in the second region.

Abstract: A method for fabricating an electronic device including a semiconductor memory includes: forming a memory layer over a substrate; forming a memory element by selectively etching the memory layer, wherein forming the memory element includes forming an etching residue on a sidewall of the memory element, the etching residue including a first metal; and forming a spacer by implanting oxygen and a second metal into the etching residue, the spacer including a compound of the first metal-oxygen-the second metal, the second metal being different from the first metal.

Abstract: Implementations of the disclosed technology provide an electronic device including a semiconductor memory and a method for fabricating the same, in which processes are easily performed and the characteristics of a variable resistance element are improved. An electronic device according to an implementation of the disclosed technology is an electronic device including a semiconductor memory, wherein the semiconductor memory includes: a substrate; a conductive contact plug formed over the first conductive layer and including a stack of a conductive low-resistance structure and a conductive planarizing layer; and a variable resistance pattern coupled to the contact plug, wherein the low-resistance structure comprises a diffusion barrier layer, a low-resistance material layer and a gap-fill layer.