Patents by Inventor In Hwan Doh

In Hwan Doh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11803223
    Abstract: An open channel solid state drive includes a flash memory including a first block and a controller which controls the flash memory, the controller receiving write data and a physical address of the first block from a host and attempting a write of the data in the first block. The controller generates first data which is not written in the first block among the write data when a power-off occurs during writing attempt. The write data includes the first data and second data already written in the first block. The controller determines whether successive writing of the first data in the first block is possible or impossible. If the successive writing is possible, the controller successively writes the data in the first block. If the successive writing is impossible, the host or the controller writes the first data and the second data in a second block of the flash memory.
    Type: Grant
    Filed: September 13, 2021
    Date of Patent: October 31, 2023
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Dae Ok Kim, In Hae Kang, Min Seok Ko, Yang Woo Roh, In Hwan Doh, Jong Won Lee, Se Jeong Jang
  • Publication number: 20220269602
    Abstract: A storage device includes a non-volatile memory including a plurality of memory blocks. The storage device performs an alignment operation in response to receipt of an align command. The alignment operation converts a received logical address of a logical segment into a physical address and allocates the physical address to a physical block address corresponding to a free block. The storage device is further configured to performs a garbage collection in units of the physical block address that indicates one memory block.
    Type: Application
    Filed: May 10, 2022
    Publication date: August 25, 2022
    Inventors: Byoung-Geun KIM, In-Hwan DOH, Joo-Young HWANG, Seung-Uk SHIN, Min-Seok KO, Jae-Yoon CHOI
  • Patent number: 11341043
    Abstract: A storage device includes a non-volatile memory including a plurality of memory blocks. The storage device performs an alignment operation in response to receipt of an align command. The alignment operation converts a received logical address of a logical segment into a physical address and allocates the physical address to a physical block address corresponding to a free block. The storage device is further configured to performs a garbage collection in units of the physical block address that indicates one memory block.
    Type: Grant
    Filed: August 16, 2019
    Date of Patent: May 24, 2022
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Byoung-Geun Kim, In-Hwan Doh, Joo-Young Hwang, Seung-Uk Shin, Min-Seok Ko, Jae-Yoon Choi
  • Publication number: 20210405724
    Abstract: An open channel solid state drive includes a flash memory including a first block and a controller which controls the flash memory, the controller receiving write data and a physical address of the first block from a host and attempting a write of the data in the first block. The controller generates first data which is not written in the first block among the write data when a power-off occurs during writing attempt. The write data includes the first data and second data already written in the first block. The controller determines whether successive writing of the first data in the first block is possible or impossible. If the successive writing is possible, the controller successively writes the data in the first block. If the successive writing is impossible, the host or the controller writes the first data and the second data in a second block of the flash memory.
    Type: Application
    Filed: September 13, 2021
    Publication date: December 30, 2021
    Inventors: DAE OK KIM, In Hae Kang, Min Seok Ko, Yang Woo Roh, In Hwan Doh, Jong Won Lee, Se Jeong Jang
  • Patent number: 11126238
    Abstract: An open channel solid state drive includes a flash memory including a first block and a controller which controls the flash memory, the controller receiving write data and a physical address of the first block from a host and attempting a write of the data in the first block. The controller generates first data which is not written in the first block among the write data when a power-off occurs during writing attempt. The write data includes the first data and second data already written in the first block. The controller determines whether successive writing of the first data in the first block is possible or impossible. If the successive writing is possible, the controller successively writes the data in the first block. If the successive writing is impossible, the host or the controller writes the first data and the second data in a second block of the flash memory.
    Type: Grant
    Filed: September 30, 2019
    Date of Patent: September 21, 2021
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Dae Ok Kim, In Hae Kang, Min Seok Ko, Yang Woo Roh, In Hwan Doh, Jong Won Lee, Se Jeong Jang
  • Patent number: 11010071
    Abstract: A solid state drive includes: a plurality of non-volatile memories, each of the non-volatile memories connected to a channel, the channel connected to at least one way connected to a die; a host interface which receives stream data and stream information from a host; and a resource allocator which allocates the stream data to super blocks of the plurality of non-volatile memories on the basis of the stream information. A super block includes a unit super block, and the unit super block includes a block of a first die corresponding to a first channel and connected to a plurality of the ways connected to the first channel. The stream data may include stream groups, and the stream information may include the number of streams included in a stream group. A performance factor of a stream or stream group an extent size of a stream, and an allocation position of the stream, may also be included in the stream information.
    Type: Grant
    Filed: February 4, 2019
    Date of Patent: May 18, 2021
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Min Seok Ko, Joo Young Hwang, In Hwan Doh, Chul Lee, Jae Yoon Choi
  • Patent number: 10824564
    Abstract: An operation method of a memory controller which is configured to control a nonvolatile memory device includes receiving a command from the outside, calculating a delay time based on a currently available write buffer, a previously available write buffer, and a reference value, and processing the command based on the delay time.
    Type: Grant
    Filed: June 13, 2018
    Date of Patent: November 3, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Yu-hun Jun, Sil Wan Chang, Heechul Chae, Seontaek Kim, In Hwan Doh
  • Publication number: 20200183474
    Abstract: An open channel solid state drive includes a flash memory including a first block and a controller which controls the flash memory, the controller receiving write data and a physical address of the first block from a host and attempting a write of the data in the first block. The controller generates first data which is not written in the first block among the write data when a power-off occurs during writing attempt. The write data includes the first data and second data already written in the first block. The controller determines whether successive writing of the first data in the first block is possible or impossible. If the successive writing is possible, the controller successively writes the data in the first block. If the successive writing is impossible, the host or the controller writes the first data and the second data in a second block of the flash memory.
    Type: Application
    Filed: September 30, 2019
    Publication date: June 11, 2020
    Inventors: DAE OK KIM, IN HAE KANG, MIN SEOK KO, YANG WOO ROH, IN HWAN DOH, JONG WON LEE, SE JEONG JANG
  • Patent number: 10671287
    Abstract: A method of operating a storage device to perform a garbage collection operation on a nonvolatile memory device having a plurality of memory blocks, the storage device configured to operate based on a multi-stream scheme such that a plurality of data is written into the plurality of memory blocks based on which of a plurality of streams is associated with the plurality of data. The method may include selecting at least two memory blocks among the plurality of memory blocks as victim memory blocks such that the victim memory blocks are configured to store data associated with a same stream of the plurality of streams; and performing the garbage collection operation on the victim memory blocks.
    Type: Grant
    Filed: August 23, 2018
    Date of Patent: June 2, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: In-Hwan Doh, Byung-Hei Jun, Joo-Young Hwang
  • Patent number: 10671524
    Abstract: A method of operating a data storage device includes programming non-fully programmed memory blocks at a point in time when a reference time elapses from a point in time when each of the memory blocks is physically erased, acquiring a first interval and a second interval, calculating a disturb index based on the first interval and the second interval, selecting a victim block for garbage collection based on the disturb index, and copying valid page data of the victim block into a free block. The first interval is defined by a point in time when each of the memory blocks is physically erased and a point in time when each of the memory blocks is fully programmed. The second interval is an interval during which a fully programmed state is maintained after a point in time when each of the memory blocks is fully programmed.
    Type: Grant
    Filed: October 29, 2018
    Date of Patent: June 2, 2020
    Assignee: Samsung Electronics Co,. Ltd.
    Inventors: Sangkwon Moon, Seung-Yeon Lee, Heewon Lee, In Hwan Doh, NamWook Kang
  • Publication number: 20200159656
    Abstract: A storage device includes a non-volatile memory including a plurality of memory blocks. The storage device performs an alignment operation in response to receipt of an align command. The alignment operation converts a received logical address of a logical segment into a physical address and allocates the physical address to a physical block address corresponding to a free block. The storage device is further configured to performs a garbage collection in units of the physical block address that indicates one memory block.
    Type: Application
    Filed: August 16, 2019
    Publication date: May 21, 2020
    Inventors: Byoung-Geun Kim, In-Hwan Doh, Joo-Young Hwang, Seung-Uk Shin, Min-Seok Ko, Jae-Yoon Choi
  • Patent number: 10657041
    Abstract: In a data management method for a storage device, the storage device includes a nonvolatile memory device including a plurality of memory blocks. A TRIM-after-COPY command is received from an external host such that a data compaction operation is performed on a first storage region. Valid data stored in the first storage region are internally copied into a second storage region based on the TRIM-after-COPY command. A TRIM operation is performed based on the TRIM-after-COPY command to update a logical-to-physical address mapping table and a valid page bitmap.
    Type: Grant
    Filed: July 17, 2018
    Date of Patent: May 19, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: In-Hwan Doh, Joo-Young Hwang
  • Patent number: 10572402
    Abstract: A storage device includes a memory device; and a controller configured to fetch a command from a host, the command indicating a logical address, process the command based on the logical address, and receive, from a first replica storage device, an acknowledgment signal indicating that the command has been processed by the first replica storage device.
    Type: Grant
    Filed: April 27, 2018
    Date of Patent: February 25, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Kumar Satish, Jupyung Lee, In Hwan Doh, JooYoung Hwang
  • Publication number: 20200012444
    Abstract: A solid state drive including: a plurality of non-volatile memories, each of the non-volatile memories including a channel, the channel including at least one way connected to a die; a host interface which receives stream data and stream information from a host; and a resource allocator which allocates the stream data to super blocks of the plurality of non-volatile memories on the basis of the stream information, wherein a first super block includes a first unit super block, and the first unit super block includes a block of a first die corresponding to a first channel and connected to a plurality of ways included in the first channel.
    Type: Application
    Filed: February 4, 2019
    Publication date: January 9, 2020
    Inventors: Min Seok Ko, Joo Young Hwang, In Hwan Doh, Chul Lee, Jae Yoon Choi
  • Patent number: 10409715
    Abstract: In an operating method of a memory controller, the memory controller includes a logical-to-logical (L2L) mapping table including mapping information between a first logical area and a second logical area and a logical-to-physical (L2P) mapping table including mapping information between the second logical area and a physical area of a memory device. The operating method includes receiving a first logical address of the first logical area and a first command for changing the L2L mapping table to access first data stored in the memory device through the first logical address, detecting a second logical address of the second logical area mapped to a physical address of the physical area in which the first data is stored, in response to the first command, and changing the L2L mapping table to map the first logical address to the second logical address.
    Type: Grant
    Filed: April 10, 2017
    Date of Patent: September 10, 2019
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sung-Hwan Bae, Chan-Ik Park, Hyun-Jin Choi, Seong-Jun Ahn, In-Hwan Doh
  • Publication number: 20190163621
    Abstract: In a data management method for a storage device, the storage device includes a nonvolatile memory device including a plurality of memory blocks. A TRIM-after-COPY command is received from an external host such that a data compaction operation is performed on a first storage region. Valid data stored in the first storage region are internally copied into a second storage region based on the TRIM-after-COPY command. A TRIM operation is performed based on the TRIM-after-COPY command to update a logical-to-physical address mapping table and a valid page bitmap.
    Type: Application
    Filed: July 17, 2018
    Publication date: May 30, 2019
    Inventors: IN-HWAN DOH, JOO-YOUNG HWANG
  • Publication number: 20190146679
    Abstract: A method of operating a storage device to perform a garbage collection operation on a nonvolatile memory device having a plurality of memory blocks, the storage device configured to operate based on a multi-stream scheme such that a plurality of data is written into the plurality of memory blocks based on which of a plurality of streams is associated with the plurality of data. The method may include selecting at least two memory blocks among the plurality of memory blocks as victim memory blocks such that the victim memory blocks are configured to store data associated with a same stream of the plurality of streams; and performing the garbage collection operation on the victim memory blocks.
    Type: Application
    Filed: August 23, 2018
    Publication date: May 16, 2019
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: In-Hwan DOH, Byung-Hei JUN, Joo-Young HWANG
  • Publication number: 20190087332
    Abstract: An operation method of a memory controller which is configured to control a nonvolatile memory device includes receiving a command from the outside, calculating a delay time based on a currently available write buffer, a previously available write buffer, and a reference value, and processing the command based on the delay time.
    Type: Application
    Filed: June 13, 2018
    Publication date: March 21, 2019
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Yu-hun JUN, SIL WAN CHANG, Heechul CHAE, SEONTAEK KIM, In Hwan DOH
  • Publication number: 20190087362
    Abstract: A storage device includes a memory device; and a controller configured to fetch a command from a host, the command indicating a logical address, process the command based on the logical address, and receive, from a first replica storage device, an acknowledgment signal indicating that the command has been processed by the first replica storage device.
    Type: Application
    Filed: April 27, 2018
    Publication date: March 21, 2019
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Kumar SATISH, Jupyung LEE, In Hwan DOH, JooYoung HWANG
  • Publication number: 20190065363
    Abstract: A method of operating a data storage device includes programming non-fully programmed memory blocks at a point in time when a reference time elapses from a point in time when each of the memory blocks is physically erased, acquiring a first interval and a second interval, calculating a disturb index based on the first interval and the second interval, selecting a victim block for garbage collection based on the disturb index, and copying valid page data of the victim block into a free block. The first interval is defined by a point in time when each of the memory blocks is physically erased and a point in time when each of the memory blocks is fully programmed. The second interval is an interval during which a fully programmed state is maintained after a point in time when each of the memory blocks is fully programmed.
    Type: Application
    Filed: October 29, 2018
    Publication date: February 28, 2019
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Sangkwon MOON, Seung-Yeon Lee, Heewon Lee, In Hwan Doh, NamWook KANG