Abstract: Semiconductor devices and methods for fabricating the semiconductor devices are disclosed. In some implementations, a semiconductor device includes first and second conductive layers spaced apart from each other, and a memory cell interposed between the first and second conductive layers. The memory cell includes a first selector layer, a second selector layer spaced apart from the first selector layer, and an insulating layer interposed between the first selector layer and the second selector layer.

Abstract: There are provided a system and a method for setting a synchronization agent. A system for setting an optimal synchronization agent according to a workload according to an embodiment includes: a data integration device configured to integrate and store data which is collected through a collection agent; an agent management server configured to manage the collection agent that periodically polls data from a data source and transmits the data to the data integration device; and an agent setting automation device configured to set an optimal agent set value related to collection and transmission of data of the collection agent.

Abstract: There are provided a method and a system for selecting an optimal synchronization broker for each workload. A system for selecting an optimal synchronization broker for each workload according to an embodiment includes: a storage unit including a database that contains specialist recommendation information including information on a correct protocol that is recommended by a specialist with respect to a service specification and data transmission requirements; and a processor configured to determine an optimal in-bound protocol and an optimal out-bound protocol according to the data transmission requirements through a decision tree model that is trained by using the specialist recommendation information as training data.

Abstract: A handheld pressing and steaming appliance includes: an upper arm; a lower arm attached at one end to an end of the upper arm; a steam generation unit mounted on the upper arm; a water reservoir located in the upper arm and/or the lower arm; a water pump fluidly connected to the water reservoir and to the steam generation unit; a heating plate mounted near a free end of the upper arm and including a plurality of first exhaust holes that are in fluid communication with the steam generation unit; and a bearing plate mounted on the lower arm at a free end thereof, the bearing plate including a plurality of second exhaust holes. The appliance is movable between open and closed positions. In the closed the second exhaust holes are substantially aligned with the first exhaust holes, such that steam exhausted from the first exhaust holes also passes through the second exhaust holes.

Abstract: Provided is a method for electrowinning neodymium compound. The method includes providing a fluoride-based electrolyte through an opening defined in an electrolytic bath including a cathode and an anode. The method includes providing granules, each including a neodymium compound and having at least one cavity defined therein, through the opening defined in the electrolytic bath. The method includes dissolving at least a portion of the granule in a molten salt of the fluoride-based electrolyte. The method also includes reducing neodymium at the cathode. The cavity is defined inside or on the surface of the granule, and the apparent density of the granules is lower than the density of the molten salt. The method proposed has an improved process compared to those of the related art.

Abstract: A processor-implemented method includes generating a preprocessed infrared (IR) image by performing first preprocessing based on an IR image including an object; generating a preprocessed depth image by performing second preprocessing based on a depth image including the object; and determining whether the object is a genuine object based on the preprocessed IR image and the preprocessed depth image

Abstract: A handheld pressing and steaming appliance includes: an upper arm; a lower arm attached at one end to an end of the upper arm; a steam generation unit mounted on the upper arm; a water reservoir located in the upper arm and/or the lower arm; a water pump fluidly connected to the water reservoir and to the steam generation unit; a heating plate mounted near a free end of the upper arm and including a plurality of first exhaust holes that are in fluid communication with the steam generation unit; and a bearing plate mounted on the lower arm at a free end thereof, the bearing plate including a plurality of second exhaust holes. The appliance is movable between open and closed positions. In the closed the second exhaust holes are substantially aligned with the first exhaust holes, such that steam exhausted from the first exhaust holes also passes through the second exhaust holes.

Abstract: A handheld pressing and steaming appliance includes: an upper arm; a lower arm attached at one end to an end of the upper arm; a steam generation unit mounted on the upper arm; a water reservoir located in the upper arm and/or the lower arm; a water pump fluidly connected to the water reservoir and to the steam generation unit; a heating plate mounted near a free end of the upper arm and including a plurality of first exhaust holes that are in fluid communication with the steam generation unit; and a bearing plate mounted on the lower arm at a free end thereof, the bearing plate including a plurality of second exhaust holes. The appliance is movable between open and closed positions. In the closed the second exhaust holes are substantially aligned with the first exhaust holes, such that steam exhausted from the first exhaust holes also passes through the second exhaust holes.

Abstract: An electronic device may include a semiconductor memory structured to include a plurality of memory cells, wherein each of the plurality of memory cells may comprise: a first electrode layer; a second electrode layer; and a selection element layer disposed between the first electrode layer and the second electrode layer to electrically couple or decouple an electrical connection between the first electrode layer and the second electrode layer based on a magnitude of an applied voltage or an applied current with respect to a threshold magnitude, wherein the selection element layer has a dopant concentration profile which decreases from an interface between the selection element layer and the first electrode layer toward an interface between the selection element layer and the second electrode layer.

Abstract: A semiconductor device may include: a plurality of first conductive lines extending in a first direction; a plurality of second conductive lines extending in a second direction; a plurality of memory cells respectively disposed at intersection regions between the first conductive lines and the second conductive lines; and a layer formed between each memory cell and at least one of a first conductive line and an intersecting second conductive line between which the memory cell is located, wherein the layer includes a conductive material that is capable of generating a void to create an open circuit by electromigration when a current applied to the layer through the first conductive line and the second conductive line exceeds a threshold current and is electrically conductive when the current applied to the layer through the first conductive line and the second conductive line is below the threshold current.

Abstract: A processor-implemented method includes: generating a preprocessed infrared (IR) image by performing first preprocessing based on an IR image including an object; generating a preprocessed depth image by performing second preprocessing based on a depth image including the object; and determining whether the object is a genuine object based on the preprocessed IR image and the preprocessed depth image.

Abstract: A driver circuit for operating a memory cell, adapted to be coupled to at least one memory cell through a respective output node, said driver circuit including: a first circuit for supplying the memory cell with a first read reference voltage through the output node; a second circuit for supplying the memory cell with a second read reference voltage through the output node; and a third circuit for controlling an operation of the second circuit, wherein a range of the second read reference voltage at the output node is wider than a range of the first read reference voltage at the output node during a read operation on the memory cell.

Abstract: Proposed is a probe head having a probe card for performing a circuit inspection of a wafer. More particularly, proposed are a probe head and a probe card having the probe head, the probe head having a guide plate. The guide plate has a guide hole and a shield portion composed of a metal material positioned at the periphery of the guide hole, thereby blocking signal interference that may be occurred between adjacent probes.

Abstract: A semiconductor device may include: a plurality of first conductive lines extending in a first direction; a plurality of second conductive lines spaced apart from the first conductive lines and extending in a second direction intersecting the first direction; and a plurality of memory cells respectively disposed to overlap intersection regions of the plurality of the first conductive lines and the plurality of the second conductive lines; and a layer structured to include an insulating material containing metal ions and formed between each memory cell and at least one of a first conductive line and a second conductive line that intersects with each other at a memory cell.

Abstract: Disclosed are a method of operating a selector device, a method of operating a nonvolatile memory apparatus to which the selector device is applied, an electronic circuit device including the selector device, and a nonvolatile memory apparatus. The method of operating the selector device controls access to a memory element, and includes providing the selector device including a switching layer and first and second electrodes disposed on both surfaces of the switching layer, which includes an insulator and a metal element, and applying a multi-step voltage pulse to the switching layer via the first and second electrodes to adjust a threshold voltage of the selector device, the multi-step voltage pulse including a threshold voltage control pulse and an operating voltage pulse. The operating voltage pulse has a magnitude for turning on the selector device, and the threshold voltage control pulse has a lower magnitude lower than the operating voltage pulse.

Abstract: A user authentication method and a user authentication apparatus acquire an input image including a frontalized face of a user, calculate a confidence map including confidence values, for authenticating the user, corresponding to pixels with values maintained in a depth image of the frontalized face of the user among pixels included in the input image, extract a second feature vector from a second image generated based on the input image and the confidence map, acquire a first feature vector corresponding to an enrolled image, and perform authentication of the user based on a correlation between the first feature vector and the second feature vector.

Abstract: We provide plasmonic structures having optical responses that are sensitive to mechanical input(s). Such plasmon resonances can be made sufficiently sensitive to deformation to enable this approach. These structures can be used in active devices, such as an optical metasurface controlled by one or more acoustic inputs, or in passive devices such as an acoustic sensor or mechanical force sensor.

Abstract: Proposed are an inductor and a manufacturing method thereof. More particularly, proposed are an inductor capable of mass production by simplifying the manufacturing process while satisfying the needs for miniaturization and low resistance, and a manufacturing method thereof.

Abstract: Operating a selector device that controls access of a signal to a memory element may comprise applying a main operating voltage pulse and a refresh voltage pulse to the selector device. The refresh voltage pulse and main operating voltage pulse have opposite polarities. A magnitude of the main operating voltage pulse is greater than or equal to a threshold voltage for turning on the selector device, and a maximum magnitude of the refresh voltage pulse is less than the threshold voltage. The refresh voltage pulse reduces a difference between the threshold voltage and a turn-off voltage of the selector device, and may be applied immediately before or immediately after the main operating voltage pulse. An electronic circuit may include the selector device and a driving circuit for apply the pulses. A nonvolatile memory may include the driving circuit and a plurality of nonvolatile memory elements each including a selector device.