Abstract: A method for forming a metal wiring layer in a semiconductor device using a dual damascene process is provided. A stopper layer, an interlayer insulating layer, and a hard mask layer are sequentially formed on a semiconductor substrate having a conductive layer. A first photoresist pattern that comprises a first opening having a first width is formed on the hard mask layer. The hard mask layer and portions of the interlayer insulating layer are etched using the first photoresist pattern as an etching mask, thereby forming a partial via hole having the first width. The first photoresist pattern is removed. An organic material layer is coated on the semiconductor substrate having the partial via hole is formed to fill the partial via hole with the organic material layer. A second photoresist pattern that comprises a second opening aligned with the partial via hole and having a second width greater than the first width is formed on the coated semiconductor substrate.

Abstract: A semiconductor device having improved metal line structure has a first dielectric layer formed on a semiconductor substrate, a metal film pattern formed on the first dielectric layer, an interface protection layer on the metal film pattern, and a second dielectric layer on the interface protection layer, wherein the second dielectric layer contains a reactive material, e.g., fluorine, which is prevented by the interface protection layer from diffusing to the metal film pattern and reacting with the metal in the metal film pattern to form a damage film, e.g., metal fluoride, which is a highly resistive material that, if formed on the semiconductor device, would reduce the reliability of the metal film pattern and thus reduce the reliability of the semiconductor device as a whole.

Abstract: A method of forming an interconnection line in a semiconductor device is provided. A first etching stopper is formed on a lower conductive layer which is formed on a semiconductor substrate. A first interlayer insulating layer is formed on the first etching stopper. A second etching stopper is formed on the first interlayer insulating layer. A second interlayer insulating layer is formed on the second etching stopper. The second interlayer insulating layer, the second etching stopper, and the first interlayer insulating layer are sequentially etched using the first etching stopper as an etching stopping point to form a via hole aligned with the lower conductive layer. A protective layer is formed to protect a portion of the first etching stopper exposed at the bottom of the via hole. A portion of the second interlayer insulating layer adjacent to the via hole is etched using the second etching stopper as an etching stopping point to form a trench connected to the via hole. The protective layer is removed.

Abstract: A micromirror driver for simultaneously and independently controlling a resonant frequency and an amplitude of a micromirror. A micromirror having a plurality of grooves is supported in rotation by an elastic body. Base electrodes having a comb shape are affixed to the grooves and along an edge of the micromirror. A plurality of driver electrodes also having a comb shape are respectively engaged with the base electrodes in a gear like arrangement to electrostatically interact with the micromirror in response to applied voltages. An amplitude and a frequency of the micromirror are controlled by varying a magnitude or a waveform of one or more electrode voltages or by varying a phase between voltages applied to at least two electrodes. Accordingly, greater driving forces, a larger rotation angle of the micromirror, and independent control of amplitude and resonant frequency of the micromirror are obtained.

Abstract: The present invention generally relates to a multimedia browsing system, and more particularly, to a method for generating a synthetic key frame, which allows a video stream to be efficiently summarized while being searched and filtered based upon the summarization. The present invention generates the synthetic key frame based upon video text by calculating an importance measure of text areas extracted from the video image and using only those text areas having the importance measures of at least a predetermined value.

Abstract: An apparatus for driving a capillary discharge plasma display panel having first and second substrates spaced apart, a plurality of pairs of first and second electrodes arranged between the first and second substrates, a dielectric layer formed between the first and second electrodes, at least one capillary in the dielectric layer between the each pair of the first and second electrodes for generating a capillary discharge, the apparatus includes a plurality of cells selectively discharging to glow defined by the pairs of the first and second electrodes, and an address circuit for applying a triangular pulse waveform during a sustain period to stabilize the capillary discharge.

Abstract: A method for inputting secret information by using and information processing system which comprises means for detecting events and display means, is provided. The method comprises the displaying at least two characters separately on the display means, displaying screen multi-pointers comprising at least tow screen pointers separately on screen of the display means, moving at least two screen pointers on the screen of the display means, and recording information associated with the screen multi-pointers in response to the second event detected by the detecting means.

Abstract: A device that is hermetically sealed at a wafer level or a method of hermetically sealing a device, which is sensitive to high temperatures or affected by heating cycles. Semiconductor devices are formed on a wafer. A lid wafer is formed. Adhesives are formed in a predetermined position over the wafer and/or the lid wafer. The wafer and the lid wafer are sealed by the adhesives at the wafer level. The sealing may be performed at a low temperature using a solder to protect the devices sensitive to heat. The sealed devices are diced into individual chips. In the wafer level hermetic sealing method, a sawing operation is performed after the devices are sealed. Therefore, the overall processing time is reduced, devices are protected from the effects of moisture or particles, and devices having a moving structure, such as MEMS devices, are more easily handled.

Abstract: The present invention relates to a method of managing application processor in a mobile communication HLR system. Also, an object of the present invention is to provide a processor management method for a mobile communication HLR system that performs an appropriate process by analyzing a state of an application processor when there is no response from the application processor with respect to a health check message. Another object of the present invention is to provide a processor management for a mobile communication HLR system that minimizes a system malfunction time due to an overload, when a state of an application processor is determined to be an overload state, by analyzing the overload to thereby obtain detailed information and performing an overload recovering function corresponding to the obtained information.

Abstract: An integrated circuit device is manufactured by forming a pattern on a substrate. The pattern may include two or more mesa regions. The pattern and the substrate are coated with a spin on glass layer and then the spin on glass layer is dissolved so that the spin on glass layer is recessed from upper surfaces of the mesa regions opposite the substrate. Before dissolving the spin on glass layer, a thermal treatment may be applied to remove a solvent from the spin on glass layer.

Abstract: A method of fabricating a semiconductor device having a low dielectric constant is disclosed. According to the method, a silicon oxycarbide layer is formed, treated with plasma, and patterned. The silicon oxycarbide layer is formed by a coating method or a CVD method such as a PECVD method. Treating the silicon oxycarbide layer with plasma is performed by supplying at least one gas selected from a group of He, H2, N2O, NH3, N2, O2 and Ar. It is desirable that plasma be applied at the silicon oxycarbide layer in a PECVD device by an in situ method after forming the silicon oxycarbide layer. In a case in which a capping layer is further stacked and patterned, it is desirable to treat with H2-plasma. Even in a case in which an interlayer insulation is formed of the silicon oxycarbide layer and a coating layer of an organic polymer group for a dual damascene process, it is desirable to perform the plasma treatment before forming the coating layer.

Abstract: The present invention relates to a method for detecting position of a BLDC (Brushless Direct Current) motor which is capable of decreasing position detecting errors by detecting accurately a crossing time point of a back electromotive force and reference potential by using. a phase voltage outputted from the BLDC motor regardless of an ON/OFF operation of a PWM (Pulse Width Modufation) signal inputted to the BLDC motor, accordingly the present invention can stably operate the BLDC motor, lower power consumption and noise of an equipment installed the BLDC motor stably operating.

Abstract: A micro-mirror device and associated method, the device including a substrate, address electrodes provided on the substrate, and a micro-mirror facing the substrate and spaced a predetermined distance from the substrate. The micro-mirror device is adapted so that the slope of the micro-mirror can be adjusted by electrostatic attraction forces between the address electrodes and the micro-mirror. The micro-mirror device further includes auxiliary electrodes formed on and projected from the substrate. The upper portions of the auxiliary electrodes are disposed in the vicinity of the micro-mirror, so that distances between the micro-mirror and the auxiliary electrodes can remain small, even when the micro-mirror is inclined by electrostatic attraction forces in one direction. Accordingly, restoration of the micro-mirror is enhanced by electrostatic attraction forces of the auxiliary electrodes.

Abstract: An integrated circuit device includes a substrate that has a pattern formed thereon. The pattern may have two or more mesa regions. A spin on glass insulation layer is disposed between the pair of mesa regions and a second insulation layer is disposed on the spin on glass insulation layer, at least partially in the gap between the mesas, to form a composite insulation layer. The second insulation layer may be SiO2, SiN, and/or SiON. The spin on glass may be polysilazane, hydro silsesquioxane, silicate, and/or methyl silsesquioxane.

Abstract: An integrated circuit device is manufactured by forming a pattern on a substrate. The pattern may include two or more mesa regions. The pattern and the substrate are coated with a spin on glass layer and then the spin on glass layer is dissolved so that the spin on glass layer is recessed from upper surfaces of the mesa regions opposite the substrate. Before dissolving the spin on glass layer, a thermal treatment may be applied to remove a solvent from the spin on glass layer.

Abstract: The present invention relates to a system for searching and browsing multimedia, and more particularly, to a video skimming method and apparatus which is capable of summarizing the full content of a subject video data within a short time and rapidly moving to a desired section by skimming the content of the video based on scenes and shots formed by shot clustering and shot segmentation. The video skimming apparatus selects scenes to be reproduced and scenes to be skipped based on content-based video skimming, and then continuously reproducing a pertinent section in a shot of the scene or partially reproducing the same by utilizing a skipping technique.

Abstract: The present invention discloses a plasma display panel device and a method of fabricating the same including first and second substrates, a first electrode on the first substrate, a second electrode on the second substrate, a tape material on the second substrate including the second electrode, a plurality of third electrodes completely buried in the tape material, a plurality of barrier ribs connecting the first and second substrates formed on the second substrate, a UV-visible conversion layer on the second substrate including the second substrate between the barrier ribs, and a discharge chamber where discharge occurs between the first and second substrates, wherein the discharge chamber faces toward the second electrode through a single row of one or more capillaries formed in the tape material.

Abstract: A method for planarizing an interlayer dielectric layer formed on a semiconductor substrate having a step, using wet etch, by depositing first and second layers on the semiconductor substrate and selectively curing the second layer in the lower area using electron beams (E-beams). The second layer, e.g., an SOG layer formed of HSQ, has a lower etch rate during the wet etch in the cured area, to thereby easily planarize the substrate of the interlayer dielectric layer.

Abstract: There is provided a small and light ozone generating apparatus capable of producing ozone with much less consumption of electric power. The present invention comprises a pulse generator for generating high-voltage pulses and a discharge chamber for inducing electrical discharge in response to the high-voltage pulses. The pulse generator includes an LC circuit for compressing square wave signals and generating impulses. The use of impulse greatly reduces electric power consumption and volume of ozone generating apparatus. Electrical discharge takes place between an electrode plate and grounded chamber wall. A sheet of oxide dielectric covers the chamber wall to prevent corrosion of chamber wall.

Abstract: A hydraulic control system for a continuously variable transmission includes a pressure regulator, a shift controller, a forward/reverse controller, and a torque converter operation controller. The pressure regulator includes a primary regulator valve for regulating hydraulic pressure supplied from an oil pump, a first solenoid valve, a secondary regulator valve, and a solenoid supply valve. The shift controller includes a shift ratio control valve, and a second solenoid valve controlling the shift ratio control valve. The forward/reverse controller includes a pressure control valve, a third solenoid valve controlling the pressure control valve, a manual valve, and first and second friction elements acting respectively as forward and reverse operational elements. The torque converter operation controller includes a torque converter feed valve receiving hydraulic pressure from the pressure regulator, a lock-up clutch control valve, and a fourth solenoid valve controlling the lock-up clutch control valve.