Abstract: A body for a vehicle is proposed. The body includes an A pillar upper member supporting a front glass of the vehicle, an A pillar lower member disposed under the A pillar upper member and extending in a vertical direction of the vehicle, a cowl cross member extending in a width direction of the vehicle, and a joint provided on a front side of a vehicle cockpit, provided between a lower end of the A pillar upper member, an upper end of the A pillar lower member, and an end of the cowl cross member, and connected to each of the lower end of the A pillar upper member, the upper end of the A pillar lower member, and the end of the cowl cross member to form a load path.

Abstract: The present disclosure relates to a simulation apparatus for secondary battery production. The simulation apparatus for secondary battery production comprises a memory configured to store at least one instruction and at least one processor configured to execute the at least one instruction stored in the memory to perform operations including: receiving information related to a user account of a user who uses a simulation apparatus related to secondary battery production; executing an apparatus operating unit including a 3D coater related to secondary battery production, a facility operating unit including a plurality of adjustment parameters for determining operation of the 3D coater, and a quality checking unit including quality information related to quality of a material produced by the 3D coater when information related to the user account is received.

Abstract: A glass stress test method includes breaking a glass, analyzing a shape of a crack of a broken portion of the glass in a plan view, finding a breakage origin of the glass based on the shape of the crack in the plan view, analyzing a cross-section of the breakage origin, and calculating a stress of the glass based on a cross-sectional analysis result of the breakage origin. The stress of the glass is calculated as a value proportional to a floor constant defined by a condition of a floor surface disposed when the glass is broken.

Abstract: An antenna device includes a dielectric layer disposed on a ground plane; a first patch antenna pattern disposed on the dielectric layer; first and second feed vias feeding an RF signal to the first patch antenna pattern; a first feed pattern connected to the first feed via, and coupled to the first patch antenna pattern; and a second feed pattern connected to the second feed via and coupled to the first patch antenna pattern. The first patch antenna pattern includes a first edge in parallel with a first direction, and a second edge in parallel with a second direction. The first feed pattern is disposed near the second edge, the second feed pattern is disposed near the first edge, and a first width of the first feed pattern measured in a second direction is different from a second width of the second feed pattern measured in the first direction.

Abstract: A microelectronic system may include a microelectronic component having electrically conductive elements exposed at a first surface thereof, a socket mounted to a first surface of the microelectronic component and including a substrate embedded therein, one or more microelectronic elements each having active semiconductor devices therein and each having element contacts exposed at a front face thereof, and a plurality of socket pins mounted to and extending above the substrate, the socket pins being ground shielded coaxial socket pins. The one or more microelectronic elements may be disposed at least partially within a recess defined within the socket. The socket may have a land grid array comprising top surfaces of the plurality of the socket pins or electrically conductive pads mounted to corresponding ones of the socket pins, and the element contacts of the one or more microelectronic elements may be pressed into contact with the land grid array.

Abstract: The present invention introduces a plasma etching method and apparatus. The plasma etching method may include forming a photoresist pattern on a target etching layer, hardening the surface of the photoresist pattern by exposing to a first plasma generated from a first discharge gas containing a reforming gas including carbon (C) and sulfur (S) and sequentially annealing, and etching the target etching layer with a second plasma generated from a second discharge gas using the surface-hardened photoresist pattern as a mask.

Abstract: The present disclosure relates to a method for carrying out dose delivery quality assurance for high-precision radiation treatment, in which parameters affecting a pass rate of dose delivery quality assurance can be derived through regression analysis, which is a known statistical analysis method, and a pass rate prediction model capable of predicting each parameter and the pass rate of dose delivery quality assurance can be derived, and accordingly, it can be predicted in advance whether dose delivery quality assurance will be passed according to the parameters through the above prediction model, without repeatedly carrying out dose delivery quality assurance according to a patient's treatment plan, and as a result, the efficiency of dose delivery quality assurance can be enhanced, and the time or capacity required for such quality assurance is reduced, such that radiation treatment for an actual patient can be quickly and precisely carried out.

Abstract: The present disclosure relates to a simulation apparatus for secondary battery production.

Abstract: The present invention relates to a method of manufacturing polycrystalline silicon ingot using a crucible in which an oxygen exhaust passage is formed by single crystal or polycrystalline rods, the method including the steps of: manufacturing the single crystal or polycrystalline silicon rods each having the shape of a quadrilateral pillar; putting the single crystal or polycrystalline quadrilateral pillar-shaped silicon rods into the crucible in such a manner as to be arranged close to one another along the inner peripheral surface of the crucible to thus form a space portion inside the single crystal or polycrystalline silicon rods, into which silicon chunks are put, and the oxygen exhaust passages between the inner peripheral surface of the crucible and the respective surfaces of the single crystal or polycrystalline silicon rods oriented toward the inner peripheral surface of the crucible; putting the silicon chunks into the space portion of the crucible; and melting and crystallizing the silicon chunks.

Abstract: A battery cell charging and discharging apparatus includes a tray configured to support a plurality of battery cells thereon, a plurality of lower cooling fans disposed at the tray, a power jig comprising a terminal configured to supply power to the battery cells and the lower cooling fans, and upper cooling fans disposed above the tray. Temperature deviation between the battery cells is minimized.

Abstract: Disclosed herein is a burn-in system with a plurality of plugs on test boards, including: a main body (100) which has a test chamber (200) with an open front side; a plurality of test boards (40) on which a plurality of semiconductor chips (90) are mounted and which is mounted in the test chamber (200); a main board which tests the semiconductor chips by exchanging signals with the plurality of semiconductor chips; a door (540) which is provided on the main body (100) to open and close the test chamber (200); and a temperature control means provided inside the main body (100) to heat and cool the test boards (40) mounted inside the test chamber (200).

Abstract: A semiconductor device includes a shielding wire formed across a semiconductor die and an auxiliary wire supporting the shielding wire, thereby reducing the size of a package while shielding the electromagnetic interference generated from the semiconductor die. In one embodiment, the semiconductor device includes a substrate having at least one circuit device mounted thereon, a semiconductor die spaced apart from the circuit device and mounted on the substrate, a shielding wire spaced apart from the semiconductor die and formed across the semiconductor die, and an auxiliary wire supporting the shielding wire under the shielding wire and formed to be perpendicular to the shielding wire. In another embodiment, a bump structure is used to support the shielding wire. In a further embodiment, an auxiliary wire includes a bump structure portion and wire portion and both the bump structure portion and the wire portion are used to support the shielding wire.

Abstract: A semiconductor device manufacturing method comprising loading a substrate into a substrate treatment apparatus, performing a deposition process on the substrate, and cleaning the substrate treatment apparatus. The substrate treatment apparatus includes a housing defining a treatment area in which the deposition process is performed, a gas supply supplying a first process gas at a flow rate of 1000 sccm to 15000 sccm and supplying a second process gas, a remote plasma supply connected to the gas supply, generating a first process plasma and a second process plasma by applying RF power to plasma-process the first process gas and the second process gas, and a shower head installed in the housing to supply the first process plasma and the second process plasma to the treatment area. The second process plasma cleans a membrane material deposited on an inner wall of the housing.

Abstract: Disclosed is a method for producing a high-entropy alloy superconductor bulk materials and wire materials, the method including a first step of mixing 4 to 10 types of metals selected from a group consisting of niobium (Nb), tantalum (Ta), titanium (Ti), hafnium (Hf), zirconium (Zr), tungsten (W), molybdenum (Mo), chromium (Cr), vanadium (V), and rhenium (Re) with each other to prepare a mixture and then milling the mixture to prepare mixed metal powders; and a second step of sintering the mixed metal powders prepared in the first step.

Abstract: An apparatus for manufacturing a semiconductor device and a method of manufacturing the apparatus, the apparatus including a heater configured to heat a target, and a coating layer, the coating layer including a ternary material of transition metal(M)-aluminum(Al)-nitrogen(N) represented by the following Chemical Formula: [Chemical Formula] MxAl1?xNy, wherein x and y satisfy the following relations: 0<x<1 and y?1.

Abstract: A lung phantom unit for radiotherapy according to an embodiment of the present disclosure may arrange, at a location not affected by a magnetic field, a phantom driving cylinder and a driving device which may move a lung mimic and a tumor mimic in a lung simulation block. The lung phantom unit may be used for general purpose even as a phantom for MRI-based and CT image-based radiotherapy. Since lung and tumor motions are implemented by air injection, it may be possible to precisely measure the motion and volume change of a lung according to subtle changes in air pressure so that customized radiotherapy suitable for a patient having various breathing patterns is possible.

Abstract: A computing device of the present invention estimates an unknown parameter ? of a model formula when distributed sample data is acquired, wherein when an estimated quantity of ? is acquired, a function g is estimated using a random forest model, such that when an estimated quantity of g is acquired, the estimated quantity of g and the estimated quantity of ? are used so as estimate a function G as a prediction formula for new data corresponding to a specific item such that an estimated quantity of G is acquired, and thus new data xnew is received, thereby enabling the class of the specific item to be classified from the calculated value.

Abstract: Provided is a method for manufacturing a stent, including: coating a coating material on a stent; and drying the stent at a temperature in the range of from 40° C. to 150° C., and the coating and the drying are simultaneously performed.

Abstract: Provided is a method for manufacturing a stent, including: coating a coating material on a stent; and drying the stent at a temperature in the range of from 40° C. to 150° C., and the coating and the drying are simultaneously performed.

Abstract: A semiconductor device includes a shielding wire formed across a semiconductor die and an auxiliary wire supporting the shielding wire, thereby reducing the size of a package while shielding the electromagnetic interference generated from the semiconductor die. In one embodiment, the semiconductor device includes a substrate having at least one circuit device mounted thereon, a semiconductor die spaced apart from the circuit device and mounted on the substrate, a shielding wire spaced apart from the semiconductor die and formed across the semiconductor die, and an auxiliary wire supporting the shielding wire under the shielding wire and formed to be perpendicular to the shielding wire. In another embodiment, a bump structure is used to support the shielding wire. In a further embodiment, an auxiliary wire includes a bump structure portion and wire portion and both the bump structure portion and the wire portion are used to support the shielding wire.