Abstract: A battery module includes a plurality of secondary batteries, each including an electrode assembly and an electrolyte accommodated in an inner space of an exterior case. The battery module also includes an electrode lead having a body and a plate-shaped head portion. A first end of the body is electrically connected to a positive electrode plate or a negative electrode plate of the electrode assembly, and a second end of the body protrudes outward from the exterior case. The plate-shaped head extends in both directions perpendicular to the protruding direction of the body from the second end. The battery module also includes a bus bar having a plate shape with a slit extending inwardly from one end thereof so as to receive a portion of the body. The electrode lead and the bus bar may be at least partially made of an electrically conductive material.

Abstract: Provided are a die pickup module and a die bonding apparatus including the same. The die pickup module includes a wafer stage for supporting a wafer including dies attached on a dicing tape, a die ejector arranged under the dicing tape and for separating a die to be picked up from the dicing tape, a non-contact picker for picking up the die in a non-contact manner so as not to contact a front surface of the die, a vertical driving unit for moving the non-contact picker in a vertical direction to pick up the die and an inverting driving unit for inverting the non-contact picker to invert a die picked up by the non-contact picker.

Abstract: A wearable photoluminescence sensor, which is portable and has improved sensitivity and accuracy, and a remote sensing apparatus comprising same, the disclosed wearable photoluminescence sensor includes a reflective support and a semipermeable filter disposed over and under translucent photodiodes, thus allows light of a second wavelength band, having the photoluminescence properties of getting lost or passing through, to be reflected again and thus maximally utilized, and thereby allows sensitivity and accuracy to be improved.

Abstract: A display device and method of fabricating the same are provided. The display device includes a substrate and a thin-film transistor formed on the substrate. The thin-film transistor includes a lower gate conductive layer disposed on the substrate, and a lower gate insulating film disposed on the lower gate conductive layer The lower gate insulating film includes an upper surface and sidewalls. The thin-film transistor includes an active layer disposed on the upper surface of the lower gate insulating film, the active layer including sidewalls. At least one of the sidewalls of the lower gate insulating film and at least one of the sidewalls of the active layer are aligned with each other.

Abstract: A communication system includes a transmitter that encodes binary bits of each of a plurality of data streams into a plurality of symbols and converts the plurality of symbols into a plurality of output signals, respectively corresponding to a plurality of channels, the converting based on a transmission rule defined by a first matrix; and a receiver that combines the plurality of output signals, received through the plurality of channels, the combining based on a reception rule defined by a second matrix, the combining restoring the plurality of symbols, and the receiver decodes the plurality of symbols into the binary bits. The first matrix and the second matrix are determined based on a third matrix that models a crosstalk effect between adjacent channels from among the plurality of channels, to reduce the crosstalk effect.

Abstract: A semiconductor device includes an active pattern on a substrate, the active pattern extending in a first direction, a gate electrode on the active pattern, the gate electrode extending in a second direction intersecting the first direction and including a first portion and a second portion arranged along the second direction, a first contact plug on the gate electrode, the first contact plug being connected to a top surface of the second portion of the gate electrode, a source/drain region in the active pattern on a sidewall of the gate electrode, and a source/drain contact on the source/drain region, a height of a top surface of the source/drain contact being higher than a top surface of the first portion of the gate electrode and lower than the top surface of the second portion of the gate electrode.

Abstract: The present invention relates to a positive electrode active material which makes it possible to improve the electrochemical properties and stability of a positive electrode active material including a lithium composite oxide by adjusting the direction of a concentration gradient of a metal element of the lithium composite oxide, and a lithium secondary battery using a positive electrode including the positive electrode active material.

Abstract: A photoacoustic and ultrasonic imaging device includes a laser light source configured to generate a laser, an ultrasonic wave source configured to generate an ultrasonic wave generation signal, an imaging probe including a laser emitter configured to receive the laser and emit the laser to a target and an ultrasonic transducer configured to receive the ultrasonic wave generation signal, emit an ultrasonic wave to the target, and detect a photoacoustic signal and an ultrasonic signal generated and reflected from the target, and an operation unit configured to form an image of tissue in the target from the laser and an image of the tissue in the target from the ultrasonic wave on the basis of the photoacoustic signal and the ultrasonic signal detected by the ultrasonic transducer.

Abstract: An organic light emitting diode display includes a first thin film transistor of which a channel is formed in a polycrystalline transistor, a second thin film transistor of which a channel is formed in an oxide semiconductor layer, an organic light emitting diode electrically connected to the first thin film transistor, a storage capacitor having a first electrode and a second electrode, wherein the second electrode of the storage capacitor is electrically connected to a gate electrode of the first thin film transistor, and an overlapping layer overlapping the oxide semiconductor layer in a plan view and receiving a positive voltage. The oxide semiconductor layer is positioned higher than the gate electrode of the first thin film transistor and the second electrode of the storage capacitor.

Abstract: Discussed is a pouch type secondary battery including an electrode assembly in which one or more positive electrode plates and negative electrode plates are stacked, an electrode tap that extends from the electrode assembly, an electrode lead bondingly connected to the electrode tap, and a pouch exterior that surrounds and seals the electrode assembly such that a portion of the electrode lead is exposed. The electrode lead includes a first weld area electrically coupled to the electrode tap. The electrode tap includes a second weld area electrically coupled to the first weld area, an electrode connection part distinguished from the second weld area by a rupture portion connecting area, and electrically connected to the electrode assembly. The rupture portion connecting area connects the second weld area and the electrode connection part, and is ruptured when stress occurs and separates the second weld area from the electrode connection part.

Abstract: A rotor blade system. The rotor blade system includes a rotor and a plurality of blades coupled to the rotor. The plurality of blades are arranged in an airfoil distribution pattern. The airfoil distribution pattern includes one or more baseline blades and one or more intentionally mistuned blades including an intentional mistuning feature.

Abstract: A semiconductor package includes a base package substrate, a first semiconductor chip, and a second semiconductor chip. The base package substrate includes a redistribution region where a redistribution layer is provided, a plurality of vertical conductive vias connected to the redistribution layer, and a recess region recessed from an upper surface of the redistribution region. The base package substrate further includes an interposer in the recess region, the interposer comprising a substrate, a plurality of upper pads disposed at an upper surface of the substrate, and plurality of through electrodes respectively connected to the plurality of upper pads to pass through the substrate. The first semiconductor chip and second semiconductor chip, each include a plurality of conductive interconnection terminals respectively connected to the plurality of upper pads and the vertical conductive vias exposed at the upper surface of the redistribution region.

Abstract: A semiconductor device includes a stacked body including stacked insulating layers and stacked conductive layers; a cell plug; a connection contact structure; and a source layer coupled to the cell plug. The cell plug includes upper and lower portions, the connection contact structure includes a first connection contact disposed at substantially the same level as the lower portion of the cell plug, and a second connection contact disposed at substantially the same level as the upper portion thereof, a level at which the first and second connection contacts contact each other is substantially the same as a level at which the upper and lower portions of the cell plug contact each other, and a level of an uppermost portion of the second connection contact is higher than a level of a bottom surface of the source layer, and is lower than a level of a top surface thereof.

Abstract: The present disclosure is directed to improvements in interference mitigation for Adjacent Channel Leakage in wireline communication, and more specifically, but not exclusively, to improved kernel designs that can facilitate interference mitigation for Adjacent Channel Leakage in cable modem systems. Examples of the present disclosure provide an apparatus for a transceiver device that comprises interference cancellation circuitry configured to cancel interference caused by upstream signals in one or more upstream sub-bands on one or more downstream sub-bands based on a combination of a plurality of kernels. The interference is at least partially caused by non-linearities within a transmission circuitry of the transceiver device, the plurality of kernels representing the non-linearities within the transmission circuitry of the transceiver device. Each of the kernels comprises one or more associated terms, with each of the associated terms being in-band for at least one of the one or more downstream sub-bands.