Abstract: An organic light emitting diode (OLED) display according to an exemplary embodiment of the invention includes: a display substrate including a plurality of pixel areas; a tilt layer formed on the display substrate of each of the plurality of pixel areas, and having a tilt angle with respect to the display substrate; a first electrode formed on the tilt layer; an organic emission layer formed on the first electrode; a second electrode formed on the organic emission layer; an encapsulation substrate disposed on the second electrode and in parallel with the display substrate; and a prism sheet formed on the encapsulation substrate and having a plurality of prisms.

Abstract: Example methods and example embodiments include methods of fabricating semiconductor devices and semiconductor devices fabricated by the same. Example fabricating methods include forming a first nanowire, oxidizing the first nanowire to form a first nanostructure including a first insulator and a second nanowire, and oxidizing the second nanowire to form a second nanostructure including a second insulator and nanodots. Example semiconductor devices include nanostructures including nanodots and nanostructures providing storage nodes in memory devices.

Abstract: Single transistor floating-body DRAM devices have a vertical channel transistor structure. The DRAM devices include a substrate, and first and second floating bodies disposed on the substrate and isolated from each other. A source region and a drain region are disposed under and above each of the first and second floating bodies. A gate electrode is disposed between the first and second floating bodies. Methods of fabricating the single transistor floating-body DRAM devices are also provided.

Abstract: A frequency includes a first edge detection unit configured to generate a first count signal responsive to detecting first edges of an input signal and a second edge detection unit configured to generate a second count signal responsive to detecting the first edges of the input signal in a first operation mode and to generate the second count signal responsive to detecting second edges of the input signal in a second operation mode. One of the first and second edges is a rising edge and the other of the first and second edges is a falling edge. A pulse triggered buffer unit generates an output signal responsive to the first and second count signals. The output signal is divided by a target division ratio with respect to the input signal that is an odd number division ratio in one mode and an even number division ratio in the other mode.

Abstract: A method of forming a microelectronic device includes forming a groove structure having opposing sidewalls and a surface therebetween on a substrate to define a nano line arrangement region. The nano line arrangement region has a predetermined width and a predetermined length greater than the width. At least one nano line is formed in the nano line arrangement region extending substantially along the length thereof and coupled to the surface of the groove structure to define a nano line structure. Related devices are also discussed.

Abstract: The device includes: a tunnel insulating layer, a charge trap layer; a blocking insulating layer; and a gate electrode sequentially formed on a substrate. The charge trap layer includes: plural trap layers comprising a first material having a first band gap energy level; spaced apart nanodots, each nanodot being at least partially surrounded by at least one of the trap layers, wherein the nanodots comprise a second material having a second band gap energy level that is lower than the first band gap energy level; and an intermediate blocking layer comprising a third material having a third band gap energy level that is higher than the first band gap energy level, formed between at least two of the trap layers. This structure prevents loss of charges from the charge trap layer and improves charge storage capacity.

Abstract: A method of forming a metal pattern includes forming a precursor layer including a metal precursor on a substrate, irradiating a light on the precursor layer to form a metal seed layer having a predetermined pattern, and electroless-plating the metal seed layer to form a metal pattern layer.

Abstract: A method for fabricating a graphene thin film by reducing graphene oxide and a method for fabricating an optoelectronic device using the same are provided. The method for fabricating a graphene thin film comprises: (a) preparing graphene oxide; (b) preparing graphene through reducing the graphene oxide by a sulfonyl hydrazide-based reducing agent; (c) preparing a graphene dispersed solution by dispersing the graphene into an organic solvent; and (d) fabricating a graphene thin film by applying the graphene dispersed solution. The sulfonyl hydrazide-based reducing agent may be a compound having a sulfonyl hydrazide substituent of Chemical Formula 1 in the present disclosure in which A may be any one in Chemical Formula 2 in the present disclosure.

Abstract: A liquid crystal display device includes a first substrate, a first electrode on the first substrate, a second substrate opposed to the first substrate, and a second electrode on the second substrate. The second electrode corresponds to the first electrode. The liquid crystal display device also includes a liquid crystal structure between the first electrode and the second electrode. The liquid crystal structure includes a plurality of liquid crystal molecules and at least one movement control member. The movement control member in the liquid crystal structure restricts a movement of the liquid crystal molecules.

Abstract: A display device includes a main display unit and a liquid crystal display cover coupled with the main display unit. The liquid crystal display cover is movable between open and closed positions with respect to the main display unit. The liquid crystal display cover includes a lower substrate, an upper substrate, and a liquid crystal layer. The lower substrate includes a plurality of first pixels thereon. The upper substrate faces the lower substrate and has a first common electrode thereon. The liquid crystal layer is between the lower substrate and the upper substrate.

Abstract: A transflective liquid crystal display (LCD) includes: a first substrate formed with a thin film transistor and a pixel electrode connected to the thin film transistor; a second substrate formed with a common electrode and a color filter and facing the first substrate; a liquid crystal layer formed between the first substrate and the second substrate; a first polarizing plate disposed at one side of the first substrate that does not face the second substrate; a second polarizing plate disposed at one side of the second substrate that does not face the first substrate; a cholesteric film formed on the first substrate; and a backlight unit disposed at one side of the first polarizing plate that does not face the first substrate.

Abstract: Embodiments relate to a liquid crystal display (LCD) and a driving method thereof, a driving method of a liquid crystal display (LCD) including a liquid crystal layer having a hysteresis characteristic according to a plurality of voltage curves for a liquid crystal applying voltage versus transmittance includes: applying a reset voltage to the liquid crystal layer before a plurality of gray voltages according to grayscale data of one frame; generating the gray voltages corresponding to one voltage curve selected according to the applied reset voltage among a plurality of curves according to the hysteresis characteristic; and applying the gray voltages to a corresponding region of the liquid crystal layer.

Abstract: A liquid crystal display device includes: a first substrate; a first electrode on a first face of the first substrate; a second substrate opposed to the first substrate; a second electrode on a first face of the second substrate, the second electrode corresponding to the first electrode; and a liquid crystal structure between the first substrate and the second substrate, the liquid crystal structure including liquid crystal capsules.

Abstract: A method for driving a display device includes cumulatively applying a reset pulse of a predetermined level to a first electrode and applying a common voltage to a second electrode opposed to the first electrode to form an initial state of a plurality of cholesteric liquid crystal capsules included in a liquid crystal layer between the first electrode and the second electrode.

Abstract: A display device comprises: a first substrate; a second substrate opposite the first substrate; an electrode unit formed on one or both of the first substrate and the second substrate, and configured to form an electric field between the first substrate and the second substrate; and a polymer dispersed liquid crystal layer located so as to correspond to the electric field formed between the first substrate and the second substrate, and having a reflector configured to reflect light.

Abstract: Single transistor floating-body DRAM devices have a vertical channel transistor structure. The DRAM devices include a substrate, and first and second floating bodies disposed on the substrate and isolated from each other. A source region and a drain region are disposed under and above each of the first and second floating bodies. A gate electrode is disposed between the first and second floating bodies. Methods of fabricating the single transistor floating-body DRAM devices are also provided.

Abstract: Provided are a nano filament structure and a method of forming the nano filament structure. The nano filament structure includes a first layer disposed on a substrate, a second layer having a gap of nanometer size disposed on the first layer, a catalyst layer interposed between the first layer and the second layer, and a nano filament. One end of the nano filament is in contact with the catalyst layer and grows by penetrating the gap of the second layer.

Abstract: A liquid crystal display device, including a first substrate, a thin-film transistor on the first substrate and including a gate electrode, a gate insulating layer, an active layer, and source and drain electrodes, an organic insulating layer on the thin-film transistor, a first electrode layer on the organic insulating layer, the first electrode layer extending between respective portions of the organic insulating layer to contact the source and drain electrode, a black layer on the first electrode layer and the organic insulating layer, a liquid crystal layer on the black layer, a second electrode layer on the liquid crystal layer, and a second substrate on the second electrode layer. The liquid crystal may include a cholesteric liquid crystal layer or a polymer network liquid crystal (PNLC).

Abstract: Single transistor floating-body DRAM devices have a vertical channel transistor structure. The DRAM devices include a substrate, and first and second floating bodies disposed on the substrate and isolated from each other. A source region and a drain region are disposed under and above each of the first and second floating bodies. A gate electrode is disposed between the first and second floating bodies. Methods of fabricating the single transistor floating-body DRAM devices are also provided.

Abstract: A semiconductor memory device may have a DRAM cell mode and a non-volatile memory cell mode without a capacitor, including multiple transistors arranged in an array and having floating bodies, word lines connected to gate electrodes of the transistors, bit lines at a first side of the gate electrodes connected to drains of the transistors, source lines at a second side of the gate electrodes, different from the first side, and connected to sources of the transistors on the semiconductor substrate, and charge storage regions between the gate electrodes and the floating bodies.