Abstract: An embodiment device includes an input module including a motor configured to generate a rotational force, an output module configured to receive power from the input module to be rotatable, and a connection module having a first side coupled to the input module and a second side, opposite the first side, coupled to the output module, wherein the connection module is configured to transmit the power from the input module to the output module.

Abstract: A battery module according to one embodiment of the present disclosure includes at least one battery cell, and a module unit containing a unit module frame surrounding the at least one battery cell, wherein a side surface part of the unit module frame includes a recessed part.

Abstract: The flow rate control device includes a main plate corresponding to an inner diameter and including a through hole which is formed at the center thereof and through which a fluid flows, a sub-plate corresponding to a size of the through hole, disposed in front of the main plate, and applied with a pressure of the flowing fluid, and an expansion and contraction flow path formed to connect the through hole and a circumference of the sub-plate to each other and expanded and contracted by the pressure applied to the sub-plate. The expansion and contraction flow path includes a plurality of holes which are formed in a side surface thereof and through which the flow flows, and has a cross-sectional area changed by the pressure to control a flow rate.

Abstract: An orbit transition apparatus that transitions an orbit of a payload in outer space includes a rotating body, an adapter disposed on a center part of the rotating body for docking a payload, a launch module disposed outside of the rotating body for launching the payload, and a thruster for rotating the rotating body. The launch module may launch the payload to a target orbit.

Abstract: Disclosed herein are a method, an apparatus and a storage medium for encoding/decoding using a transform-based feature map. An optimal basis vector is extracted from one or more feature maps, and a transform coefficient is acquired through a transform using the basis vector. The basis vector and the transform coefficient may be transmitted through a bitstream. In an embodiment, one or more feature maps are reconstructed using the basis vector and the transform coefficient, which are decoded from the bitstream.

Abstract: There are provided a memory device and a manufacturing method of the memory device. The memory device includes: a first stack structure including a word line of a first group and select lines of a first group; a second stack structure including select lines of a second group; a first plug in the first stack structure; a second plug connected to the first plug, the second plug being disposed in the second stack structure; a first isolation pattern between the select lines of the first group; and a second isolation pattern between the select lines of the second group.

Abstract: A method for preparing a sulfur-carbon composite including a step of pretreating a carbon material is provided. The method is capable of removing water and other impurities from the carbon material effectively, and the sulfur-carbon composite obtained by the method used as a positive electrode active material of a lithium-sulfur battery provides improved sulfur supportability and over-voltage performance of the lithium-sulfur battery, reduced initial irreversible capacity of the positive electrode active material, and improved output characteristics and life characteristics.

Abstract: A battery module includes a battery cell stack where a plurality of battery cells are stacked; a module frame that accommodates the battery cell stack; end plates that are positioned at one side and the other side of the battery cell stack, and having openings; a busbar frame that is positioned between the battery cell stack and the end plate; and a terminal busbar that is mounted to the busbar frame, and exposed through the opening. The busbar frame includes a blocking member protruded toward the opening.

Abstract: Provided are a method and apparatus for generating a safety control signal of a road. The method includes inputting road state information for a first time point, including a safety control signal for the first time point and dynamic information for the first time point obtained from a video of a road, to a prediction model, inferring dangerous situation prediction information for a second time point after the first time point, by using the prediction model, and generating a safety control signal notifying a risk of accident on the road for the second time point, based on the inferred dangerous situation prediction information, wherein the prediction model is trained by using a loss function configured by dangerous situation prediction information inferred for a specific time point from road state information before the specific time point, and dangerous situation measurement information calculated from road state information for the specific time point.

Abstract: A battery module includes a battery cell stack that is formed by stacking a plurality of battery cells along a first direction, an insulating cover that covers both end parts of the battery cell stack, a holding member that wraps both end parts of the battery cell stack adjacent to the insulating cover, and a first electrode lead and a second electrode lead that protrude from each of a first battery cell and a second battery cell adjacent to each other included in the battery cell stack, the first electrode lead and the second electrode lead are bent in different directions from each other, and the first electrode lead and the second electrode lead overlap with each other, to form a welding part and an extra space between the welding part and the battery cell stack.

Abstract: The present invention relates to polypropylene non-woven fabric having excellent loft property, a method for preparing polypropylene non-woven fabric having excellent loft property, and a method for evaluating the properties of the polypropylene resin.

Abstract: A memory device, and a method of manufacturing the same, includes a stacked structure including gate lines stacked to be spaced apart from each other. The memory device also includes a first channel structure vertical to the gate lines and including a major axis in a first direction. The memory device further includes a second channel structure configured to separate the first channel structure and including a major axis in a second direction orthogonal to the first direction. The first channel structure includes a first memory cell group and a second memory cell group separated from each other by the second channel structure. The second channel structure includes a third memory cell group and a fourth memory cell group separated from each other in the second direction.

Abstract: The present disclosure relates to a method of identifying a posture and detecting a specific behavior based on artificial intelligence. A method of detecting an abnormal behavior in a video based on a computational device according to an embodiment of the present disclosure may involve obtaining at least one video frame; obtaining at least one piece of human posture information from a first artificial intelligence based on the obtained video frame; obtaining information on whether an abnormal behavior has been detected and at least one piece of abnormal behavior information from a second artificial intelligence based on at least one piece of human posture information obtained in chronological order; and marking the at least one video frame based on the information on whether an abnormal behavior has been detected and the at least one piece of abnormal behavior information.

Abstract: A semiconductor memory device is provided. The semiconductor memory device includes a gate stacked structure including conductive layers, each of the conductive layers extending in a first direction and a second direction and including a top surface facing a third direction, wherein the conductive layers are stacked to be spaced apart from each other in the third direction. Also, the semiconductor memory device includes a first channel structure and a second channel structure extending in the third direction to pass through the gate stacked structure and spaced apart from each other in the second direction, a first insulating layer disposed over the gate stacked structure, an etch stop layer disposed over the first insulating layer and including a trench, an insulating material in the trench, and a bit line contact passing through the insulating material.

Abstract: Proposed is a laser treatment device having a cooling system, the device including a laser module which irradiates a patient's skin with a laser, a sensing unit which detects a temperature of a surface of the patient's skin before, during, or after the skin is heated by the laser, a cooling module which includes an inlet which receives a refrigerant from a refrigerant storage unit, a nozzle which sprays the refrigerant on the skin, a conduit which connects the inlet with the nozzle, an flow rate control unit which controls a spray amount of the refrigerant by using a valve which is positioned on the conduit and connects or disconnects the inlet with or from the nozzle, and a refrigerant condition control unit which applies a thermal energy to the refrigerant by using a thermoelectric element located between the flow rate control unit and the nozzle.

Abstract: There are provided a memory device and a manufacturing method of the memory device. The memory device includes: a stack structure including gate lines stacked to be spaced apart from each other; main plugs arranged to be spaced apart from each other; plug isolation patterns isolating the main plugs into first and second sub-plugs; and a select isolation pattern isolating at least one gate line located between the plug isolation patterns adjacent to each other.

Abstract: A method of manufacturing a semiconductor device is provided. The method may include forming a stack, forming a preliminary stepped structure by patterning the stack, forming a first stepped structure, a second stepped structure, and an opening located between the first stepped structure and the second stepped structure by etching the preliminary stepped structure, forming a passivation layer that fills the opening and covers the first stepped structure, and forming a third stepped structure by etching the second stepped structure using the passivation layer as an etching barrier.

Abstract: A method of manufacturing a display device including a pixel which is connected to a scan line and a data line intersecting the scan line. The pixel includes a light emitting element and a driving transistor controlling a driving current, which is supplied to the light emitting element, according to a data voltage received from the data line. The driving transistor includes a first active layer having an oxide semiconductor containing tin (Sn).

Abstract: A method for augmenting data according to some embodiments of the present disclosure includes obtaining a score prediction model learned using a first noisy sample of a first class, generating a second noisy sample by adding the noise with the specified distribution to a sample of a second class, and generating a fake sample of the first class from the second noisy sample using a score for the second noisy sample predicted through the score prediction model.

Abstract: A memory device, and a method of manufacturing the same, includes a stack structure and main plugs passing through the stack structure, the main plugs being spaced apart from each other in a first direction. The memory device also includes a separation pattern separating the main plugs in a second direction and a slit pattern separating the stack structure into first and second memory blocks, the slit pattern having an ellipse shape.