Abstract: A semiconductor structure and a method for forming a semiconductor structure are provided. The method includes receiving a semiconductor substrate having a first region and a second region; forming a dielectric layer over the semiconductor substrate; removing portions of the dielectric layer to form a dielectric structure in the first region, wherein the dielectric structure includes a base structure and a plurality of first isolation structures over the base structure; forming a semiconductor layer covering the first region and the second region; removing a portion of the semiconductor layer to expose a top surface of the plurality of first isolation structures; and forming a plurality of second isolation structures in the second region.

Abstract: An image sensor includes a photoelectric converter configured to convert received light into charges in response to the received light and provide the charges to a first node, a transfer transistor configured to provide a voltage of the first node to a floating diffusion node, a reset transistor configured to reset a voltage of the floating diffusion node to a driving voltage based on a reset signal, a source follower transistor configured to provide a unit pixel output based on the voltage of the floating diffusion node, a select transistor connected to the source follower transistor and gated with a selection signal to output the unit pixel output to the outside, and a ferroelectric capacitor connected to the floating diffusion node, wherein the ferroelectric capacitor is configured to adjust a conversion gain of the floating diffusion node based on a conversion gain mode of the ferroelectric capacitor, the conversion gain mode being a first conversion gain mode, a second conversion gain mode, or a third co

Abstract: A method for ameliorating a disease caused by nitration of tyrosine in protein includes administering a composition comprising tyrosine or a salt thereof to a subject in need thereof. Tyrosine as effective component of the present invention not only can enhance the activity of glutamine synthetase having reduced activity and but also has an effect of restoring the amount (i.e., ratio) of glutamine and glutamic acid in brain and the amount of ammonia to normal level, an effect of enhancing the insulin sensitivity in a model of type 2 diabetes, an effect of suppressing the excitotoxicity and oxidative stress in a model of epileptic seizure, an effect of reducing cerebral infarction and enhancing the activity of GS in a model of brain stroke, an effect of eliminating the nitration of tyrosine using human recombinant MnSOD, and an effect for acute renal failure and hyperammonemia.

Abstract: A method of manufacturing a semiconductor device having metal gates and the semiconductor device are disclosed. The method comprises providing a first sacrificial gate associated with a first conductive type transistor and a second sacrificial gate associated with a second conductive type transistor disposed over the substrate, wherein the first conductive type and the second conductive type are complementary; replacing the first sacrificial gate with a first metal gate structure; forming a patterned dielectric layer and/or a patterned photoresist layer to cover the first metal gate structure; and replacing the second sacrificial gate with a second metal gate structure. The method can improve gate height uniformity during twice metal gate chemical mechanical polish processes.

Abstract: The present disclosure provides a compound represented by Formula (I) and a pharmaceutically acceptable salt which are effective as a dopamine reuptake inhibitor and a method of using the compound: wherein X is independently halo, alkyl, alkoxy or nitro; m is 0, 1, 2, 3 or 4; n is 1 or 2; R1 and R2 are independently H— or alkyl; R3 is H—, alkyl or aralkyl; and R4 is H— or aryl.

Abstract: An image sensor includes a first semiconductor substrate, a photoelectric conversion region in the first semiconductor substrate, and a buried insulating film on the first semiconductor substrate. The buried insulating film covers a first region of the first semiconductor substrate and exposes a second region of the first semiconductor substrate. The sensor includes a second semiconductor substrate on the buried insulating film, an operating gate structure defining a first channel of a first conductive type in the second semiconductor substrate, and a transfer gate structure defining a second channel of a second conductive type different from the first conductive type in the second region of the first semiconductor substrate.

Abstract: Disclosed are oxadiazole compounds and pharmaceutically acceptable salts thereof. The compounds and pharmaceutically acceptable salts thereof are specifically suitable for the treatment of neurological diseases such as epilepsy.

Abstract: A method of manufacturing a semiconductor device having metal gates and the semiconductor device are disclosed. The method comprises providing a first sacrificial gate associated with a first conductive type transistor and a second sacrificial gate associated with a second conductive type transistor disposed over the substrate, wherein the first conductive type and the second conductive type are complementary; replacing the first sacrificial gate with a first metal gate structure; forming a patterned dielectric layer and/or a patterned photoresist layer to cover the first metal gate structure; and replacing the second sacrificial gate with a second metal gate structure. The method can improve gate height uniformity during twice metal gate chemical mechanical polish processes.

Abstract: Disclosed are oxadiazole compounds and pharmaceutically acceptable salts thereof. The compounds and pharmaceutically acceptable salts thereof are specifically suitable for the treatment of neurological diseases such as epilepsy.

Abstract: An image sensor is provided, the image sensor comprises a first semiconductor substrate; a photoelectric conversion layer in the first semiconductor substrate; a color filter on a first surface of the first semiconductor substrate; a micro lens covering the color filter; a first transistor on the first semiconductor substrate; a first insulating layer on a second surface; a second semiconductor substrate in contact with the first insulating layer, the second semiconductor substrate including a gate trench exposing at least a portion of the first gate structure; a second transistor on the second semiconductor substrate; a second insulating layer on the fourth surface; and a metal layer in the second insulating layer.

Abstract: A semiconductor structure and a method for forming a semiconductor structure are provided. The method includes receiving a semiconductor substrate having a first region and a second region; forming a dielectric layer over the semiconductor substrate; removing portions of the dielectric layer to form a dielectric structure in the first region, wherein the dielectric structure includes a base structure and a plurality of first isolation structures over the base structure; forming a semiconductor layer covering the first region and the second region; removing a portion of the semiconductor layer to expose a top surface of the plurality of first isolation structures; and forming a plurality of second isolation structures in the second region.

Abstract: An optical connector plug for outdoor waterproof onsite assembly. A frame having slits sheathes and is fixed to an optical cable when the optical cable is constructed on a site. The optical connector plug is waterproofed by a protective tube and an O-ring. The optical cable has a tip at one side which is attached to an assembly in a sealing or mechanical manner, and the frame sheathing an outer side of the optical cable has one side end to which an outer peripheral edge of the assembly is coupled, has the one or more slits which are cut from a middle to the other side end and are formed to be widened and narrowed in compliance with an outer diameter of the optical cable, and has a step on an outer peripheral edge at one side end to be held by an inner peripheral edge of a housing.

Abstract: A method of manufacturing a semiconductor device having metal gates and the semiconductor device are disclosed. The method comprises providing a first sacrificial gate associated with a first conductive type transistor and a second sacrificial gate associated with a second conductive type transistor disposed over the substrate, wherein the first conductive type and the second conductive type are complementary; replacing the first sacrificial gate with a first metal gate structure; forming a patterned dielectric layer and/or a patterned photoresist layer to cover the first metal gate structure; and replacing the second sacrificial gate with a second metal gate structure. The method can improve gate height uniformity during twice metal gate chemical mechanical polish processes.

Abstract: A method of using a polishing system includes securing a wafer to a support, wherein the wafer has a first diameter. The method further includes polishing the wafer using a first polishing pad rotating about a first axis, wherein the first polishing pad has a second diameter greater than the first diameter. The method further includes rotating the support about a second axis perpendicular to the first axis after polishing the wafer using the first polishing pad. The method further includes polishing the wafer using a second polishing pad after rotating the support, wherein the second polishing pad has a third diameter less than the first diameter. The method further includes releasing the wafer from the support following polishing the wafer using the second polishing pad.