Abstract: In an image recognition apparatus and an LCD apparatus having the same, a plurality of gate lines arranged in a transparent substrate has a predetermined slope such that the gate lines intersect with two sides of the transparent substrate, which are adjacent to or facing each other. A plurality of sensing signal output line arranged in the transparent substrate is substantially perpendicular to the gate lines. An image recognition sensor is formed on a pixel area defined by the gate and sensing signal output lines adjacent to each other. The image recognition sensor senses an image pattern of an object in response to gate driving signals from the gate lines and outputs the sensed image pattern through the sensing signal output lines. Accordingly, the LCD apparatus may prevent appearance of the moire image and deterioration of the display quality of the LCD panel.

Abstract: A thin film transistor optical detecting sensor includes an array substrate having a transparent substrate, a plurality of sensor thin film transistors disposed on the transparent substrate, each having a first silicon layer of a first thickness, a plurality of storage capacitors, each connected with a corresponding one of the plurality of sensor thin film transistors, storing charges of an optical current, and a plurality of switch thin film transistors, each having a second silicon layer of a second thickness less than the first thickness.

Abstract: A thin film transistor optical detecting sensor includes an array substrate having a transparent substrate, a plurality of sensor thin film transistors disposed on the transparent substrate, each having a first silicon layer of a first thickness, a plurality of storage capacitors, each connected with a corresponding one of the plurality of sensor thin film transistors, storing charges of an optical current, and a plurality of switch thin film transistors, each having a second silicon layer of a second thickness less than the first thickness.

Abstract: A thin film transistor optical detecting sensor includes an array substrate having a transparent substrate, a plurality of sensor thin film transistors disposed on the transparent substrate, each having a first silicon layer of a first thickness, a plurality of storage capacitors, each connected with a corresponding one of the plurality of sensor thin film transistors, storing charges of an optical current, and a plurality of switch thin film transistors, each having a second silicon layer of a second thickness less than the first thickness.