Abstract: Provided is a memory module, a system using the memory module, and a method of fabricating the memory module. The memory module may include a printed circuit board and a memory package on the printed circuit board. The printed circuit board may include an embedded optical waveguide and a first optical window extending from the optical waveguide to a first surface of the printed circuit board. The memory package may also include a memory die having an optical input/output section and a second optical window. The optical input/output section, the second optical window, and the first optical window may be arranged in a line and the first optical window and the second optical window may be configured to at least one of transmit an optical signal from the optical waveguide to the optical input/output section and transmit an optical signal from the optical input/output section to the optical waveguide.

Abstract: A semiconductor memory system includes a controller and a memory device that are optical-interconnected. The controller includes a control logic configured to generate a control signal for controlling the memory device and a transmitter configured to convert the control signal into an optical signal, and output the optical signal. The memory device includes a receiving unit filter configured to convert the optical signal into an electric signal, and the electric signal based on a supply voltage corresponding to a period of the optical signal or the electric signal.

Abstract: An information storage device using magnetic domain wall motion and a method of operating the same are provided. The information storage device includes a magnetic track having a plurality of magnetic domains and magnetic domain walls arranged alternately. A current supply unit is configured to apply current to the magnetic track, and a plurality of reading/writing units are arranged on the magnetic track. The information storage device further includes a plurality of storage units. Each of the plurality of storage units is connected to a corresponding one of the plurality of reading/writing units for storing data temporarily.

Abstract: Methods of reading memory cell data and nonvolatile memory devices, which apply a low voltage to memory cells adjacent to a memory cell from which data may be read are provided. Methods of reading memory cell data of nonvolatile memory device include applying a first voltage to a control gate of a read memory cell from among the plurality of memory cells, applying a third voltage to control gates of memory cell adjacent to the read memory cell, and applying a second voltage to control gates of memory cells other than the read memory cell and the adjacent memory cells.

Abstract: A memory test system is disclosed. The memory system includes a memory device, a tester generating a clock signal and a test signal for testing the memory device, and an optical splitting module. The optical splitting module comprises an electrical-optical signal converting unit which converts each of the clock signal and the test signal into an optical signal to output the clock signal and the test signal as an optical clock signal and an optical test signal. The optical splitting unit further comprises an optical signal splitting unit which splits each of the optical clock signal and the optical test signal into n signals (n being at least two), and an optical-electrical signal converting unit which receives the split optical clock signal and the split optical test signal to convert the split optical clock signal and the split optical test signal into electrical signals used in the memory device.

Abstract: Provided are methods of operating NAND nonvolatile memory devices. The operating methods include applying a read voltage or a verify voltage to a selected memory cell from among a plurality of memory cells of a cell string to verify or read a programmed state of the selected memory cell; applying a first pass voltage to non-selected memory cells closest to the selected memory cell of the cell string; applying a second pass voltage to second closest non-selected memory cells to the selected memory cell; and applying a third pass voltage to other non-selected memory cells, where the first pass voltage is less than each of the second and third pass voltages and the second pass voltage is greater than the third pass voltage.

Abstract: Semiconductor apparatuses having optical connections between a memory controller and a memory module are provided. A semiconductor apparatus includes a memory controller, at least one socket configured to receive a memory module, and a first optical-electrical module. A second optical-electrical module is mounted in the socket and optically coupled to the first optical-electrical module via at least one optical channel.

Abstract: A distance measuring sensor may include: a photoelectric conversion region; first and second charge storage regions; first and second trenches; and/or first and second vertical photogates. The photoelectric conversion region may be in a substrate and/or may be doped with a first impurity in order to generate charges in response to received light. The first and second charge storage regions may be in the substrate and/or may be doped with a second impurity in order to collect charges. The first and second trenches may be formed to have depths in the substrate that correspond to the first and second charge storage regions, respectively. The first and second vertical photogates may be respectively in the first and second trenches. A three-dimensional color image sensor may include a plurality of unit pixels. Each unit pixel may include a plurality of color pixels and the distance measuring sensor.

Abstract: Memory devices and/or methods of storing memory data bits may be provided. A memory device may include a multi-level cell (MLC) array including a plurality of MLCs, an error correction unit configured to encode data to be recorded in an MLC, where the encoded data is converted to convert the encoded data into a codeword, an error pattern analysis unit configured to analyze a first data pattern included in the codeword corresponding to an error pattern included in the codeword and a data conversion unit configured to convert the analyzed first data pattern into a second data pattern. According to the above memory devices and/or methods, it may be possible to efficiently reduce a data error that occurs when the data is stored for a relatively long period of time, thereby improving reliability.

Abstract: An optical amplifying medium, a method of manufacturing the optical amplifying medium are provided, and an optical device comprising the optical amplifying medium. The optical amplifying medium includes a multi-layer structure in which a first material layer doped with an activator and a second material layer that comprises a sensitizer are stacked.

Abstract: A distance measuring sensor may include: a photoelectric conversion region; first and second charge storage regions; first and second trenches; and/or first and second vertical photogates. The photoelectric conversion region may be in a substrate and/or may be doped with a first impurity in order to generate charges in response to received light. The first and second charge storage regions may be in the substrate and/or may be doped with a second impurity in order to collect charges. The first and second trenches may be formed to have depths in the substrate that correspond to the first and second charge storage regions, respectively. The first and second vertical photogates may be respectively in the first and second trenches. A three-dimensional color image sensor may include a plurality of unit pixels. Each unit pixel may include a plurality of color pixels and the distance measuring sensor.

Abstract: An information storage device using magnetic domain wall motion and a method of operating the same are provided. The information storage device includes a magnetic track having a plurality of magnetic domains and magnetic domain walls arranged alternately. A current supply unit is configured to apply current to the magnetic track, and a plurality of reading/writing units are arranged on the magnetic track. The information storage device further includes a plurality of storage units. Each of the plurality of storage units is connected to a corresponding one of the plurality of reading/writing units for storing data temporarily.

Abstract: Data storage devices using movement of magnetic domain walls and methods of operating the same are provided. A data storage device includes a magnetic track having a verifying region. Within the verifying region, first and second magnetic domains are arranged alternately. The first magnetic domains correspond to first data and the second magnetic domains correspond to second data. A verification sensor is arranged at an end of the verifying region. A current applying element is configured to apply one or more pulse currents to the magnetic track. A first counter is connected to the verification sensor and configured to count the number of magnetic domains passing through the verification sensor.

Abstract: Provided are photodiodes, image sensing devices and image sensors. An image sensing device includes a p-n junction photodiode having a metal pattern layer on an upper surface thereof. An image sensor includes the image sensing device and a micro-lens formed above the metal pattern layer. The metal pattern layer filters light having a first wavelength.

Abstract: Methods of reading memory cell data and nonvolatile memory devices, which apply a low voltage to memory cells adjacent to a memory cell from which data may be read are provided. Methods of reading memory cell data of nonvolatile memory device include applying a first voltage to a control gate of a read memory cell from among the plurality of memory cells, applying a third voltage to control gates of memory cell adjacent to the read memory cell, and applying a second voltage to control gates of memory cells other than the read memory cell and the adjacent memory cells.