Abstract: Provided are a mycosporine-like amino acid-producing microorganism and a method for production of mycosporine-like amino acids by using same. The microorganism can produce mycosporine-like amino acids from xylose.

Abstract: A semiconductor device may include a substrate including a cell region and a peripheral region, a gate stack on the peripheral region, an interlayer insulating layer on the gate stack, peripheral circuit interconnection lines on the interlayer insulating layer, and an interconnection insulating pattern between the peripheral circuit interconnection lines. The interconnection insulating pattern may include a pair of vertical portions spaced apart from each other in a first direction parallel to a top surface of the substrate and a connecting portion connecting the vertical portions to each other. Each of the vertical portions of the interconnection insulating pattern may have a first thickness at a same level as top surfaces of the peripheral circuit interconnection lines and a second thickness at a same level as bottom surfaces of the peripheral circuit interconnection lines. The first thickness may be substantially equal to the second thickness.

Abstract: A semiconductor device may include a substrate including a cell region, a peripheral region, and a boundary region between the cell region and the peripheral region, bit lines provided on the cell region and extended in a first direction parallel to a top surface of the substrate, bit line capping patterns provided on the bit lines, and a boundary pattern provided on the boundary region. End portions of the bit lines may be in contact with a first interface of the boundary pattern, and the bit line capping patterns may include the same material as the boundary pattern.

Abstract: Disclosed are semiconductor memory devices and their fabrication methods. The method comprises providing a substrate including a cell array region and a boundary region, forming a device isolation layer that defines active sections on an upper portion of the substrate on the cell array region, forming an intermediate layer on the substrate on the boundary region, forming on the substrate an electrode layer that covers the intermediate layer on the boundary region, forming a capping layer on the electrode layer, forming an additional capping pattern including providing a first step difference to the capping layer on the boundary region, and allowing the additional capping pattern, the capping layer, and the electrode layer to proceed an etching process to form bit lines that run across the active sections. During the etching process, the electrode layer is simultaneously exposed on the cell array region and the boundary region.

Abstract: The method includes forming a first dielectric layer on a substrate, forming a via in the first dielectric layer, sequentially forming a first metal pattern, a first metal oxide pattern, a second metal pattern, and an antireflective pattern on the first dielectric layer, and performing an annealing process to react the first metal oxide pattern and the second metal pattern with each other to form a second metal oxide pattern. The forming the second metal oxide pattern includes forming the second metal oxide pattern by a reaction between a metal element of the second metal pattern and an oxygen element of the first metal oxide pattern.

Abstract: Disclosed are semiconductor devices and their fabrication methods. The semiconductor device comprises a substrate including a peripheral block and cell blocks each including a cell center region, a cell edge region, and a cell middle region, and bit lines extending on each cell block in a first direction. The bit lines include center bit lines, middle bit lines, and edge bit lines. The bit line has first and second lateral surfaces opposite to each other in a second direction. The first lateral surface straightly extends along the first direction on the cell center region, the cell middle region, and the cell edge region. The second lateral surface straightly extends along the first direction on the cell center region and the cell edge region, and the second lateral surface extends along a third direction, that intersects the first direction and the second direction, on the cell middle region.

Abstract: An electrode assembly includes a stack and a second separator. The stack includes first and second electrodes and a first separator folded in a zigzag configuration and including spacer sections and respective side sections between the spacer sections. The first and the second electrodes are alternately disposed between first separator spacer sections The second separator extends along an upper surface, a lower surface, and at least one pair of opposing side surfaces of the stack. The side sections of the first separator define portions of the side surfaces of the stack on which the first electrode and the second electrode are not disposed. The second separator is bonded to at least one of the side sections.

Abstract: An electrode assembly manufacturing apparatus includes a stack table, a separator supply unit, first and second electrode supply units, and a side sealing device. A stack of a first electrode, a second electrode, and a separator between the first and the second electrode are stackable on the stack table. The separator supply unit is configured for supplying the separator to the stack table. The first electrode supply unit is configured for stacking the first electrode on a section of the separator on the stack table. The second electrode supply unit stacks the second electrode on a further section of the separator on the first electrode. A side sealing device heats at least one side surface of the stack.

Abstract: A color conversion display panel includes: a color conversion layer provided on a substrate and including a semiconductor nanocrystal and a scatterer; and a transmission layer provided on the substrate, wherein the semiconductor nanocrystal is included at greater than 30 wt % of an entire content of the color conversion layer, and the scatterer is included at equal to or less than 12 wt % of the entire content of the color conversion layer.

Abstract: A processor-implemented hardware accelerator method includes: receiving input data; loading a lookup table (LUT); determining an address of the LUT by inputting the input data to a comparator; obtaining a value of the LUT corresponding to the input data based on the address; and determining a value of a nonlinear function corresponding to the input data based on the value of the LUT, wherein the LUT is determined based on a weight of a neural network that outputs the value of the nonlinear function.

Abstract: A semiconductor device includes a substrate including a cell region and a peripheral region, a cell gate electrode buried in a groove crossing a cell active portion of the cell region, a cell line pattern crossing over the cell gate electrode, the cell line pattern being connected to a first source/drain region in the cell active portion at a side of the cell gate electrode, a peripheral gate pattern crossing over a peripheral active portion of the peripheral region, a planarized interlayer insulating layer on the substrate around the peripheral gate pattern, and a capping insulating layer on the planarized interlayer insulating layer and a top surface of the peripheral gate pattern, the capping insulating layer including an insulating material having an etch selectivity with respect to the planarized interlayer insulating layer.

Abstract: Edit automation enhancements may be implemented in source code editors and other text editors. Provisional selections that indicate user intentions are submitted to a suggestion generator with other edit context information, to improve the quality of generated text suggestions and reduce the cognitive load on users. A provisional selection may include a highlighted completion list entry, or document text targeted by a hovering cursor, or metainformation text targeted by the hovering cursor, for example. An inline grey text suggestion driven by provisional selection may be displayed simultaneously with completion list suggestions that were created without regard to provisional selection. Suggestions driven by provisional selection may be interleaved with existing document text. Suggestions may be accepted fully in one gesture, or in parts. Suggestions may be edited by a user before being accepted, driving further suggestion refinement.

Abstract: The method includes forming a first dielectric layer on a substrate, forming a via in the first dielectric layer, sequentially forming a first metal pattern, a first metal oxide pattern, a second metal pattern, and an antireflective pattern on the first dielectric layer, and performing an annealing process to react the first metal oxide pattern and the second metal pattern with each other to form a second metal oxide pattern. The forming the second metal oxide pattern includes forming the second metal oxide pattern by a reaction between a metal element of the second metal pattern and an oxygen element of the first metal oxide pattern.

Abstract: A data transmission method for a convolution operation, and a convolution operation apparatus including a fetcher that includes a loader, at least one sender, a buffer controller, and a reuse buffer. The method includes loading, by the loader, input data of an input feature map according to a loading order, based on input data stored in the reuse buffer, a shape of a kernel to be used for a convolution operation, and two-dimensional (2D) zero-value information of weights of the kernel; storing, by the buffer controller, the loaded input data in the reuse buffer of an address cyclically assigned according to the loading order; and selecting, by each of the at least one sender, input data corresponding to each output data of a convolution operation among the input data stored in the reuse buffer, based on one-dimensional (1D) zero-value information of the weights, and outputting the selected input data.

Abstract: Disclosed herein is a full-screen display device capable of sufficiently securing light transmittance of a sensor area overlapping a sensor unit in a pixel array and minimizing deterioration in perceived image quality of the sensor area. The pixels are arranged in the sensor area overlapping the sensor unit in the pixel array of the full-screen display device such that the number of pixels gradually decreases from the outer periphery toward the center of the sensor area in units of masks, and the area of a transmission portion gradually increases from the outer periphery toward the center of the sensor area in units of masks.

Abstract: The inventive concept provides a substrate treating apparatus.

Abstract: A neural processing device includes a first memory configured to store universal data, a second memory distinguished from the first memory and having a capacity less than that of the first memory, a bandwidth control path configured to reconfigure a memory bandwidth for memory clients to use one of the first memory and the second memory based on a control signal, and a control logic configured to calculate a target capacity for data of a target client of the memory clients determined based on a layer configuration of an artificial neural network, and generate the control signal to store the data of the target client in the second memory based on a result of comparing the target capacity and the capacity of the second memory.

Abstract: The present disclosure provides a semiconductor memory device with improved element performance and reliability. The semiconductor memory device comprises a substrate, a gate electrode extending in a first direction in the substrate, a plurality of buried contacts on the substrate, and a fence in a trench between adjacent ones of the buried contacts. The fence is on the gate electrode. The fence includes a spacer film on side walls of the trench and extending in a second direction intersecting the first direction, and a filling film in the trench and on the spacer film. An upper surface of the spacer film is lower than an upper surface of the filling film with respect to the substrate.

Abstract: Disclosed is a method and apparatus of operating a neural network. The neural network operation method includes receiving data for the neural network operation, verifying whether competition occurs between a first data traversal path corresponding to a first operation device and a second data traversal path corresponding to a second operation device, determining first operand data and second operand data from among the data using a result of the verifying and a priority between the first data traversal path and the second data traversal path, and performing the neural network operation based on the first operand data and the second operand data.

Abstract: A data transmission method for a convolution operation, and a convolution operation apparatus including a fetcher that includes a loader, at least one sender, a buffer controller, and a reuse buffer. The method includes loading, by the loader, input data of an input feature map according to a loading order, based on input data stored in the reuse buffer, a shape of a kernel to be used for a convolution operation, and two-dimensional (2D) zero-value information of weights of the kernel; storing, by the buffer controller, the loaded input data in the reuse buffer of an address cyclically assigned according to the loading order; and selecting, by each of the at least one sender, input data corresponding to each output data of a convolution operation among the input data stored in the reuse buffer, based on one-dimensional (1D) zero-value information of the weights, and outputting the selected input data.