Abstract: A method for chemically treating a disc-shaped substrate having a bottom surface, a top surface and side surfaces by contacting a process medium that is fluid-chemically active with at least the bottom surface of the substrate. The substrate is moved relative to the process medium while forming a triple line between the substrate, the substrate medium and the atmosphere surrounding the substrate and medium. In order to chemically remove errors, particularly in the side surfaces, relative motion should be carried out while avoiding a contacting of the process medium with the top surface of the substrate, where the triple line is formed at a desired height of the side surface facing away from the process medium flow side in relation to the relative motion between the substrate and the process medium.

Abstract: The construction principles according to the present invention make possible large sheet-like solar modules with low weight, which have great mechanical toughness, are inured to rough climatic environment influences and withstand thermal stress due to solar irradiation and shadowing effects. The solar modules have front and back panes, one of which has a thickness of at least 3 mm and the other of which has a thickness of at most 2 mm. The coefficient of thermal expansion of the thicker pane is preferably greater than that of the thinner pane. In preferred embodiments burling or a wavy structure is provided on one side of the front pane and/or the back pane.

Abstract: Solar modules are provided that include a front pane, an inter layer into which solar cells are embedded, and at least one back side foil, which increases the life span of the solar modules. The at least one back side foil is provided with holes having a density of at most 0.2 cm?2.

Abstract: Process for producing strip-shaped and/or point-shaped electrically conducting contacts on a semiconductor component like a solar cell, includes the steps of applying a moist material forming the contacts in a desired striplike and/or point-like arrangement on at least one exterior surface of the semiconductor component; drying the moist material by heating the semiconductor component to a temperature T1 and keeping the semiconductor element at temperature T1 over a time t1; sintering the dried material by heating the semiconductor component to a temperature T2 and keeping the semiconductor component at temperature T2 over a time t2; cooling the semiconductor component to a temperature T3 that is equal or roughly equal to room temperature, and keeping the semiconductor component at temperature T3 over a time T3; cooling the semiconductor component to a temperature T4 with T4??35° C.

Abstract: A cutting mill for crushing broken polycrystalline needle-shaped silicon material, which contains particles that have an aspect ratio of AI with 5<AI ?30, and/or broken Si wafer consisting of laminar particles, wherein the cutting mill has an interior space that is lined with silicon and/or plastic, wherein the cutting mill has a rotational body configured as a multi-sided column, wherein said rotational body, in the regions facing the interior space of the cutting mill, is lined with silicon or features silicon, and wherein blades which run parallel with the longitudinal edges of the rotational body and are disposed in the rotational area of the rotational body, are arranged in the interior space of the cutting mill, and are adjustable with respect to the rotational body.

Abstract: In the method of making a monocrystalline or polycrystalline semiconductor material semiconductor raw material is introduced into a melting crucible and directionally solidified using a vertical gradient freeze method. The molten material trickles downward, so that the raw material that has not yet melted gradually slumps in the melting crucible. The semiconductor raw material is replenished from above onto a zone of semiconductor raw material which has not yet melted or is not completely melted to at least partly compensate for shrinkage of the raw material and to raise the filling level. To reduce the melting time and influence the thermal conditions in the system as little as possible, the semiconductor raw material to be replenished is heated to a temperature below its melting temperature and introduced into the crucible in the heated state.

Abstract: A method for chemically treating a disc-shaped substrate having a bottom surface, a top surface and side surfaces by contacting a process medium that is fluid-chemically active with at least the bottom surface of the substrate. The substrate is moved relative to the process medium while forming a triple line between the substrate, the substrate medium and the atmosphere surrounding the substrate and medium. In order to chemically remove errors, particularly in the side surfaces, relative motion should be carried out while avoiding a contacting of the process medium with the top surface of the substrate, where the triple line is formed at a desired height of the side surface facing away from the process medium flow side in relation to the relative motion between the substrate and the process medium. In this way, the atmosphere can be adjusted in relation to the partial pressures of the components in the process medium such that the top surface preserves hydrophobic characteristics.

Abstract: The solar module for converting radiation energy, in particular sunlight, into electrical energy, includes a solar cell (12) that converts radiation energy into electrical energy, an electrical conductor (24) to conduct the electrical energy, an encapsulation (14) encasing the solar cell (12) to protect the solar cell (12), which includes one or more panes (16) of glass to protect and stabilize the solar cell (12) and a layer (22) of embedment material into which the solar cell (12) is laminated or cast, and a body (26) fused into the pane (16) of glass to conduct the electrical energy or to pass an electrical conductor (24) through the pane of glass (16). Furthermore, a method for fusing the body (26) into the one or more panes (16) of glass of the solar module is also described.

Abstract: A method for producing at least one functional layer on at least one region of a surface of a semiconductor component by applying a liquid to at least the one region, where the functional layer has a layer thickness d1 and the liquid required for forming the functional layer having the thickness d1 has a layer thickness d2. In order that functional layers having a desired thin and uniform thickness are produced in a reproducible manner, it is proposed that the liquid is applied to the at least one region of the surface in excess with a layer thickness d3 where d3>d2 and that subsequently, either with the semiconductor component moved in translational fashion or with the semiconductor component arranged in stationary fashion, excess liquid is removed from the surface in a contactless manner to an extent such that the liquid layer has the thickness d2 or approximately the thickness d2.

Abstract: A method for producing crystallized silicon according to the EFG process by using a shaping part, between which part and a silicon melt, crystallized silicon grows in a growth zone. Inert gas and at least water vapor are fed into the silicon melt and/or growth zone, by means of which the oxygen content of the crystallized silicon is increased. From 50 to 250 ppm of vapor water is added to the inert gas, and the inert gas has an oxygen, CO and/or CO2 content of less than 20 ppm total.

Abstract: The improved photovoltaic module contains a solar cell made of metallic silicon, which is embedded in at least one embedding material, and a corrosion inhibitor. Preferably the corrosion inhibitor is an organic compound, which has at least one nitrogen atom. As a result, the photovoltaic module according to the present invention has an extended service life, since it withstands corrosive influences.

Abstract: Process for producing strip-shaped and/or point-shaped electrically conducting contacts on a semiconductor component like a solar cell, includes the steps of applying a moist material forming the contacts in a desired striplike and/or point-like arrangement on at least one exterior surface of the semiconductor component; drying the moist material by heating the semiconductor component to a temperature T1 and keeping the semiconductor element at temperature T1 over a time t1; sintering the dried material by heating the semiconductor component to a temperature T2 and keeping the semiconductor component at temperature T2 over a time t2; cooling the semiconductor component to a temperature T3 that is equal or roughly equal to room temperature, and keeping the semiconductor component at temperature T3 over a time T3; cooling the semiconductor component to a temperature T4 with T4??35° C.

Abstract: The construction principles according to the present invention make possible large sheet-like solar modules with low weight, which have great mechanical toughness, are inured to rough climatic environment influences and withstand thermal stress due to solar irradiation and shadowing effects. The solar modules have front and back panes, one of which has a thickness of at least 3 mm and the other of which has a thickness of at most 2 mm. The coefficient of thermal expansion of the thicker pane is preferably greater than that of the thinner pane. In preferred embodiments burling or a wavy structure is provided on one side of the front pane and/or the back pane.

Abstract: The device for production of a monocrystalline or a multicrystalline material blank, especially a silicon multicrystalline blank, using the VGF method has a crucible with a rectangular or square cross section. A flat heating device, especially a jacket heater, which generates an inhomogeneous temperature profile, is arranged around the crucible. This temperature profile corresponds to the temperature gradient formed in the center of the crucible. The heat output of the flat heating device decreases from the top to the bottom end of the crucible. The flat heating device includes parallel heating webs, which extend in a meandering course. The heat outputs from the heating webs differ according to their different conductor cross sections. To avoid local overheating in corner areas of the crucible, constrictions of the cross sections of the heating webs are provided at inversion zones of their meandering course.

Abstract: Method for constructing a line or dotted structure on a support, especially for constructing strip-like electrically conducting contacts on a semiconductor component such as a solar cell, by applying an electrically conducting paste-like substance containing a solvent adhering to a support and subsequent hardening of the substance. After the substance is applied to the support, a medium containing a polar molecule is applied on the support and/or the substance, through which the solvent contained in the substance is extracted.

Abstract: A method for recovering and/or recycling starting silicon material by crushing the starting material. The recovered or recycled material is melted, and crystals, e.g. as a silicon block, tube, or strip, are grown from the obtained melt. To use starting materials that have a high aspect ratio to be able to convey the same without any problem, broken polycrystalline needle-shaped Si material (material I) containing particles having an aspect ratio AI, 5<AI?30, is used as a starting material. Material I is crushed so that the crushed particles (material II) have an aspect ratio AII<3. Alternatively, a broken Si wafer is used that is composed of laminar particles which are crushed so that the crushed particles (material III) have an aspect ratio AIII<3.

Abstract: A method for recovering and/or recycling starting silicon material by crushing the starting material. The recovered or recycled material is melted, and crystals, e.g. as a silicon block, tube, or strip, are grown from the obtained melt. To use starting materials that have a high aspect ratio to be able to convey the same without any problem, broken polycrystalline needle-shaped Si material (material I) containing particles having an aspect ratio AI, 5<A1?30, is used as a starting material. Material I is crushed so that the crushed particles (material II) have an aspect ratio AII<3. Alternatively, a broken Si wafer is used that is composed of laminar particles which are crushed so that the crushed particles (material III) have an aspect ratio AIII<3.

Abstract: The method of producing monocrystalline or multicrystalline blanks, especially silicon blanks, by using a vertical-gradient-freeze method, includes providing a crucible with a rectangular or square-shaped cross section and a heating jacket disposed around the crucible, which has a number of flat heating elements with a meandering course disposed on side faces of the crucible. The heating jacket generates an inhomogeneous temperature profile corresponding to a temperature gradient in the center of the crucible. The flat heating elements preferably comprise parallel heating webs, whose heat output is set by varying the conductor cross section. To avoid local overheating in corner areas of the crucible, constrictions of the cross section are provided at inversion zones of the meandering courses of the webs. The flat heating elements can be formed from a plurality of interconnected individual segments.

Abstract: The device for production of a monocrystalline or a multicrystalline material blank, especially a silicon multicrystalline blank, using the VGF method has a crucible with a rectangular or square cross section. A flat heating device, especially a jacket heater, which generates an inhomogeneous temperature profile, is arranged around the crucible. This temperature profile corresponds to the temperature gradient formed in the center of the crucible. The heat output of the flat heating device decreases from the top to the bottom end of the crucible. The flat heating device includes parallel heating webs, which extend in a meandering course. The heat outputs from the heating webs differ according to their different conductor cross sections. To avoid local overheating in corner areas of the crucible, constrictions of the cross sections of the heating webs are provided at inversion zones of their meandering course.

Abstract: The invention relates to a method for producing a monocrystalline or polycrystalline semiconductor material by way of directional solidification, wherein lumpy semiconductor raw material is introduced into a melting crucible and melted therein and directionally solidified, in particular using the vertical gradient freeze method. In order to prevent contamination and damage, the semiconductor raw material is melted from the upper end of the melting crucible. The molten material trickles downward, so that semiconductor raw material which has not yet melted gradually slumps in the melting crucible. In this case, the additional semiconductor raw material is replenished to the melting crucible from above onto a zone of semiconductor raw material which has not yet melted or is not completely melted, in order at least partly to compensate for a volumetric shrinkage of the semiconductor raw material and to increase the filling level of the crucible.