Abstract: A method for recovering and/or recycling starting silicon material by crushing the starting material. The recovered or recycled material is melted, and crystals, e.g. as a silicon block, tube, or strip, are grown from the obtained melt. To use starting materials that have a high aspect ratio to be able to convey the same without any problem, broken polycrystalline needle-shaped Si material (material I) containing particles having an aspect ratio AI, 5<A1?30, is used as a starting material. Material I is crushed so that the crushed particles (material II) have an aspect ratio AII<3. Alternatively, a broken Si wafer is used that is composed of laminar particles which are crushed so that the crushed particles (material III) have an aspect ratio AIII<3.

Abstract: A method for producing crystallized silicon according to the EFG process by using a shaping part, between which part and a silicon melt, crystallized silicon grows in a growth zone. Inert gas and at least water vapor are fed into the silicon melt and/or growth zone, by means of which the oxygen content of the crystallized silicon is increased. From 50 to 250 ppm of vapor water is added to the inert gas, and the inert gas has an oxygen, CO and/or CO2 content of less than 20 ppm total.

Abstract: Method for constructing a line or dotted structure on a support, especially for constructing strip-like electrically conducting contacts on a semiconductor component such as a solar cell, by applying an electrically conducting paste-like substance containing a solvent adhering to a support and subsequent hardening of the substance. After the substance is applied to the support, a medium containing a polar molecule is applied on the support and/or the substance, through which the solvent contained in the substance is extracted.

Abstract: A method as well as an apparatus for manufacturing a tube according to the EFG-method. To manufacture tubes with a desired even wall thickness, it is proposed to draw the tube from a melt whose temperature can be controllably adjusted section by section.

Abstract: The invention relates to a device and a method for the production of monocrystalline or multicrystalline materials using the vertical-gradient-freeze method, in particular silicon for applications in photovoltaics. According to the invention a low amount of wastage is achieved in that the cross section of the crucible is polygonal, in particular rectangular or square-shaped. Disposed around the circumference of the crucible there is a flat or planar heating element, in particular a jacket heater, which generates an inhomogeneous temperature profile. This corresponds to the temperature gradient formed in the centre of the crucible. The heat output of the flat heating element decreases going from the top end to the bottom end of the crucible. The flat heating element comprises a plurality of parallel heating webs, extending in a vertical or horizontal meandering course. The heat output from the webs is set by varying the conductor cross section.

Abstract: A process for conveying solid particles of irregular geometry, preferably polygonal geometry, through a pipe system, where the solid particles are conveyed by a gas. In order to enable metering through fragments or other solid particles of irregular geometry in desired quantities without any risk of the particles becoming trapped in the pipe system and causing blockages, further solid particles of regular geometry are added to the solids particles of irregular geometry.

Abstract: The invention relates to a method for constructing a layer structure on an especially fragile flat substrate. In order for thin, fragile flat substrates to be able to be subjected to refinement or construction of semiconductor components, a process is proposed with the steps: Applying an inorganic ceramic phase to the fragile substrate and subsequent heat treatment for hardening and sintering the inorganic ceramic material.

Abstract: The invention relates to a method for manufacture of a semiconductor component by the formation of a hydrogenous layer containing silicon on a substrate comprising or containing silicon such as a wafer or film. In order to achieve a good surface and volume passivation, it is proposed that during formation of the siliceous layer in the form of SiNxOy with 0<x≦1.5 and 0≦y≦2 one or more catalytically acting dopants are selectively added into the layer which release hydrogen from the SiNxOy layer. The concentration C of the dopants is 1×1014 cm3≦C≦1021 cm3.

Abstract: The invention relates to a method for manufacture of a semiconductor component by the formation of a hydrogenous layer containing silicon on a substrate comprising or containing silicon such as a wafer or film. In order to achieve a good surface and volume passivation, it is proposed that during formation of the siliceous layer in the form of SiNxOy with 0<x≦1.5 and 0≦y≦2 one or more catalytically acting dopants are selectively added into the layer which release hydrogen from the SiNxOy layer. The concentration C of the dopants is 1×1014 cm3≦C≦1021 cm3.

Abstract: The invention relates to a method for constructing a layer structure on an especially fragile flat substrate. In order for thin, fragile flat substrates to be able to be subjected to refinement or construction of semiconductor components, a process is proposed with the steps: Applying an inorganic ceramic phase to the fragile substrate and subsequent heat treatment for hardening and sintering the inorganic ceramic material.

Abstract: High purity semiconductor foils, such as silicon foils useful in solar energy cells, are produced by treating an impure semiconductor foil with at least one reactive gas while in the crystallizing state.

Abstract: A highly efficient material for producing electrical currents from sunlight and thus useful in solar cells is silicon with a total oxygen and carbon content of from 3 to 200 ppm and wherein the ratio of oxygen:carbon, as determined by infra-red analysis, is less than 2:1.

Abstract: Silicon wafers useful in solar cells or wafers of metal are produced by a process for producing wafers of predetermined dimensions by the sheet drawing process in which a melt of the wafer material is crystallized on a substrate wherein the substrate surface is modified by changing the wetting behavior of the substrate toward the melt.

Abstract: A process for the production of columnlarly solidified metallic bodies by melting metal and then solidifying said metal in a crucible, wherein the dissipation of heat is greater at the upper or lower end of the crucible than at the sides, which comprises supplying heat to the verticals sides through a heating element having a plurality of individually controlled heating sections in such a quantity that a melt of the metal is formed and then establishing directional solidification by establishing a temperature gradient by varying the heat output among the heating sections of the heating element by switching.

Abstract: The process for producing silicon suitable for use in solar cells is improved by reacting a gaseous silicon compound with aluminum wherein a finely dispersed molten surface of pure aluminum or an aluminum/silicon alloy is intensively contacted with the gaseous silicon compound during the reaction.

Abstract: An improved process for purifying and refining silicon containing impurities comprises:(i) continuously melting impure silicon to form a thin film silicon melt, preferably on an inclined surface of a silicon-resistant material,(ii) continuously treating the thin film silicon melt with a reactive gas with or without an inert gas,(iii) optionally degassing the treated silicon melt, and thereafter(iv) continuously crystallizing the treated silicon.

Abstract: Silicon having a low carbon content is produced by removing carbon from molten silicon by heating the molten silicon to temperatures of 1420.degree. to 1900.degree. C. and establishing a temperature gradient of 30.degree. to 400+ K. in the melt.

Abstract: Highly pure silicon is produced by refining impure silicon to remove deleterious impurities by contacting a melt of the impure silicon with a reacitve gas which comprises a gaseous halogen compound mixed with steam, hydrogen or a stem/hydrogen mixture.

Abstract: In the recrystallization and purification of a strip-shaped film of a metal or metalloid wherein one or more locally restricted melting zones are produced and are moved through the film, the improvement which comprises advancing the film, and melting it in zones which are transverse to the direction of advance of the strip-shaped film. Advantageously the film is melted by passing a current through a spirally wound coil which is placed near the film; the film is advantageously advanced in a plane so that the melt zones are diagonal relative to the film.

Abstract: A material resistant to high temperature melts of metal and salt which comprises a composite material containing silicon nitride, silicon oxynitride, silicon dioxide and silicon prepared by(a) suspending silicon powder in SiO.sub.2 sol to form a pourable mass,(b) molding a workpiece from said mass,(c) hardening the molded workpiece, and(d) nitriding the hardened workpiece in a nitrogen atmosphere to form silicon nitride and silicon oxynitride to a degree that SiO.sub.2 and elemental silicon remain detectable in the nitrided workpiece,is useful as the material of construction for crucibles and tools for confining, handling and treating melts of metals or salts.