Abstract: An arrangement for generating light including a light emitting diode, including a conversion element, is proposed, wherein the conversion element is arranged above the light emitting diode and is provided for at least partly changing the wavelength of the electromagnetic radiation emitted by the light emitting diode, wherein the conversion element is designed in such a way that the light impinging on the conversion element from outside in a first color range is reflected, wherein the conversion element is surrounded by an edge region, wherein the edge region is designed in such a way that light impinging on the edge region in a second color range is reflected, wherein the second color range at least partly has a color range complementary to the first color range.

Abstract: A method for producing a laterally structured phosphor layer and an optoelectronic component comprising such a phosphor layer are disclosed. In an embodiment the method includes providing a carrier having a first electrically conductive layer at a carrier top side, applying an insulation layer to the first electrically conductive layer and a second electrically conductive layer to the insulation layer, etching the second electrically conductive layer and the insulation layer, wherein the first electrically conductive layer is maintained as a continuous layer. The method further includes applying a voltage to the first electrically conductive layer and electrophoretically coating the first electrically conductive layer with a first material, and applying a voltage to the second electrically conductive layer and electrophoretically coating the second electrically conductive layer with a second material.

Abstract: An optoelectronic semiconductor component and a method for manufacturing an optoelectronic semiconductor component are disclosed. In an embodiment, the component includes a plurality of active regions configured to generate a primary radiation and a plurality of luminescent material particles configured to convert the primary radiation into a secondary radiation, wherein the active regions are arranged spaced apart from each other, wherein each active region has a main extension direction, wherein each active region has a core region comprising a first semiconductor material, wherein each active region has an active layer covering the core region, wherein each active region has a cover layer comprising a second semiconductor material and covering the active layer, wherein at least some of the luminescent material particles are arranged between the active regions, and wherein a diameter of a majority of the luminescent material particles is smaller than a distance between two adjacent active regions.

Abstract: A method for producing a multifunctional layer, a method for producing an electrophoresis substrate, and a method for producing a converter plate and an optoelectronic component are disclosed. In an embodiment the method includes providing an electrophoresis substrate comprising a carrier having a front side and a back side, wherein a first electrically conductive layer and a second electrically conductive layer are located on the front side, electrophoretically depositing a first material onto the first electrically conductive layer, electrophoretically depositing a second material onto the second electrically conductive layer and arranging a filler material between the first material and the second material, wherein the filler material forms a common boundary surface with the first material and the second material.

Abstract: A ceramic conversion element includes a first ceramic layer having a first luminescent material, which transforms electromagnetic radiation of a first wavelength range into electromagnetic radiation of a second wavelength range. A second ceramic layer includes a second luminescent material, which transforms electromagnetic radiation of the first wavelength range into electromagnetic radiation of a third wavelength range. The first luminescent material and the second luminescent material are based on at least one inorganic compound containing oxygen and are different from one another. An optoelectronic component with a ceramic conversion element and a method for producing a ceramic conversion element are also specified.

Abstract: In at least one embodiment, the semiconductor component includes an optoelectronic semiconductors chip. Furthermore, the semiconductor component includes a conversion-medium lamina, which is fitted to a main radiation side of the semiconductor chip and is designed for converting a primary radiation into a secondary radiation. The conversion-medium lamina includes a matrix material and conversion-medium particles embedded therein. Furthermore, the conversion-medium lamina includes a conversion layer. The conversion-medium particles are situated in the at least one conversion layer. The conversion-medium particles, alone or together with diffusion-medium particles optionally present, make up a proportion by volume of at least 50% of the conversion layer. Furthermore, the conversion-medium lamina includes a binder layer containing the conversion-medium particles with a proportion by volume of at most 2.5%.

Abstract: An optoelectronic semiconductor component includes an optoelectronic semiconductor chip including a light-transmissive carrier, a semiconductor layer sequence on the light-transmissive carrier and electrical connection points on a bottom portion remote from the light-transmissive carrier of the semiconductor layer sequence, a light-transmissive encapsulating material enclosing the optoelectronic semiconductor chip in places, and particles of a light-scattering and/or light-reflecting material, wherein the bottom of the semiconductor layer sequence is at least in places free of the light-transmissive encapsulating material, and the particles cover the bottom of the semiconductor layer sequence and an outer face of the encapsulating material in places.

Abstract: A method for producing an optoelectronic semiconductor chip is disclosed. A semiconductor body has a pixel area, which has at least two different subpixel areas. An electrically conductive layer is applied to the radiation outlet surface of at least one subpixel area. The electrically conductive layer is designed to at least partially salify with a protic reaction partner. A conversion layer is deposited onto the electrically conductive layer by means of a electrophoresis process.

Abstract: The invention relates to a semi-conductor component, comprising a semi-conductor chip (1) which has an active layer (1a) suitable for generating radiation and suitable for emitting radiation in the blue wavelength range. A first converter (3a) comprising a Ce doping is arranged downstream of the semiconductor chip (1) in the emission direction. In addition, a second converter (3b) comprising a minimum Ce doping of 1.5% is arranged downstream of the semiconductor chip (1) in the emission direction. The invention further relates to a module with a plurality of such components.

Abstract: A method of producing a cover element for an optoelectronic component includes producing a frame having a multiplicity of openings, wherein the frame is made of a material having embedded particles of TiO2, ZrO2, Al2O3, AlN, SiO2, or another optically reflective material and/or an embedded colored pigment; introducing a material into a multiplicity of the openings; and dividing the frame.

Abstract: An optoelectronic component includes an optoelectronic semiconductor chip embedded in a molded body such that an upper side of the optoelectronic semiconductor chip is at least partially not covered by the molded body, wherein a first metallization is arranged on an upper side of the molded body, wherein the first metallization is electrically insulated from the optoelectronic semiconductor chip, and a first material is arranged on the first metallization.

Abstract: The invention relates to an arrangement for generating mixed light, which comprises three semiconductor chips, emitting in the blue spectral range, of three devices. Arranged in the light paths of the individual semiconductor chips are different conversion elements which are configured to convert primary radiation into secondary radiation. The total radiation (S1, S2, S3) exiting the respective devices (10, 20, 30) has a corresponding chromaticity coordinate on the black body curve of the CIE color diagram 1931 or lies within a color quadrilateral of the CIE color diagram.

Abstract: A method of producing a light-emitting diode includes providing at least one light-emitting diode chip, providing a suspension comprising a solvent and particles of at least one luminescent material, arranging the at least one light-emitting diode chip in the suspension, electrophoretically depositing the particles on an outer face of the at least one light-emitting diode chip, and completing the light-emitting diode.

Abstract: An optoelectronic component, comprising: a carrier (1) and a semiconductor layer sequence (20) configured for emission of electromagnetic primary radiation and arranged on the carrier (10). The semiconductor layer sequence (20) comprises a radiation main side (21) facing away from the carrier. A connecting layer is applied directly at least on the radiation main side (21) of the semiconductor layer sequence. A conversion element (40) is configured for emission of electromagnetic secondary radiation and is arranged directly on connecting layer (30), and being formed as a prefabricated body. Connecting layer (30) comprises at least one inorganic filler (31) embedded in matrix material and being formed with a layer thickness of less than or equal to 2 ?m. The prefabricated body is attached to the semiconductor layer sequence by the connecting layer which is configured in order to filter out a short-wave component of the electromagnetic primary radiation.

Abstract: A lighting module includes an optoelectronic semiconductor chip and a converter element for wavelength conversion. The optoelectronic semiconductor chip emits electromagnetic radiation including a dominant wavelength of 430 nm to 450 nm. The converter element includes a first phosphor and a second phosphor. The first phosphor is a garnet phosphor. The first phosphor emits electromagnetic radiation including a wavelength from the blue-green spectral range. The second phosphor is a nitrido-silicate phosphor. The second phosphor emits electromagnetic radiation including a wavelength from the orange-red spectral range.

Abstract: A ceramic conversion element includes a first ceramic layer having a first luminescent material, which transforms electromagnetic radiation of a first wavelength range into electromagnetic radiation of a second wavelength range. A second ceramic layer includes a second luminescent material, which transforms electromagnetic radiation of the first wavelength range into electromagnetic radiation of a third wavelength range. The first luminescent material and the second luminescent material are based on at least one inorganic compound containing oxygen and are different from one another. An optoelectronic component with a ceramic conversion element and a method for producing a ceramic conversion element are also specified.

Abstract: A method can be used for fixing a matrix-free electrophoretically deposited layer on a semiconductor chip. A semiconductor wafer has a carrier substrate-and at least one semiconductor chip. The at least one semiconductor chip has an active zone for generating electromagnetic radiation. At least one contact area is formed on a surface of the at least one semiconductor chip facing away from the carrier substrate. A material is electrophoretically deposited on the surface of the at least one semiconductor chip facing away from the carrier substrate in order to form the electrophoretically deposited layer. Deposition of the material on the at least one contact area is prevented. An inorganic matrix material is applied to at least one section of a surface of the semiconductor wafer facing away from the carrier substrate in order to fix the material on the at least one semiconductor chip.

Abstract: A converter material includes a porous inorganic matrix material having a multiplicity of pores. A multiplicity of inorganic nanoparticles are applied on the surface of the matrix material. The nanoparticles are suitable for converting electromagnetic radiation in a first wavelength range into electromagnetic radiation in a second wavelength range. A method for producing such a converter material and an optoelectronic component that includes such a converter material are furthermore specified.

Abstract: A lighting device, in various embodiments, for generating a light emission, has a light source designed to generate light with a first dominant wavelength, a first converter designed to absorb the light generated by the light source and to emit light with a second dominant wavelength, which is longer than the first dominant wavelength, and a second converter designed to absorb a portion of the light emitted by the first converter and to emit light such that the light emission has a third dominant wavelength, which is longer than the second dominant wavelength.

Abstract: In at least one embodiment, the semiconductor component includes an optoelectronic semiconductors chip. Furthermore, the semiconductor component includes a conversion-medium lamina, which is fitted to a main radiation side of the semiconductor chip and is designed for converting a primary radiation into a secondary radiation. The conversion-medium lamina includes a matrix material and conversion-medium particles embedded therein. Furthermore, the conversion-medium lamina includes a conversion layer. The conversion-medium particles are situated in the at least one conversion layer. The conversion-medium particles, alone or together with diffusion-medium particles optionally present, make up a proportion by volume of at least 50% of the conversion layer. Furthermore, the conversion-medium lamina includes a binder layer containing the conversion-medium particles with a proportion by volume of at most 2.5%.