Abstract: The present invention relates to a polishing composition used in a step of polishing until a barrier layer adjacent to a copper layer is exposed, in a pattern formation of polishing the copper layer provided on an insulating layer through the barrier layer thereby alternately forming a copper embedded wiring and the insulating layer, the polishing composition including: an alicyclic resin acid; a colloidal silica in which a content thereof in the polishing composition is from 0.1 to 1.5% by mass, an average primary particle size thereof is from 10 to 40 nm, an average secondary particle size thereof is from 30 to 80 nm, and (the average secondary particle size×the content) is in a range of from 10 to 40; and tetramethylammonium ion.

Abstract: A method for producing a glass substrate for a magnetic disk by polishing a circular glass plate, which comprises a step of polishing the principal plane of the circular glass plate by using a slurry containing a CeO2 crystal powder, the CeO2 crystal powder being obtained in such a manner that a melt containing CeO2 is quenched to obtain an amorphous material, and the amorphous material is subjected to heat treatment to obtain a CeO2 crystals-precipitated amorphous material, which is subjected to acid treatment to separate and extract the CeO2 crystal powder from the CeO2 crystals-precipitated amorphous material.

Abstract: In polishing of a to-be-polished surface in the production of a semiconductor integrated circuit device, a flat surface of an insulating layer having an embedded metal interconnect can be obtained. Further, a semiconductor integrated circuit device having a highly planarized multilayer structure can be obtained. Provided is a polishing composition which is a chemical mechanical polishing composition for polishing a to-be-polished surface of a semiconductor integrated circuit device, contains one or more oxidizing agents selected from the group consisting of hydrogen peroxide, ammonium persulfate and potassium persulfate, an abrasive grain, an alicyclic resin acid, a basic compound and inorganic acid, and has a pH ranging from 8 to 12.

Abstract: To provide a technique employed when a plane to be polished of a silicon dioxide type material layer is polished in production of a semiconductor integrated circuit device, which is capable of polishing protruded portions by priority while suppressing polishing at recessed portions and planarizing the plane to be polished at a high level with an extremely small polishing amount, with small pattern dependence of the polishing rate. In production of a semiconductor integrated circuit device, when a plane to be polished is a plane to be polished of a silicon dioxide type material layer, a polishing compound containing cerium oxide particles, a water-soluble polyamine and water is used as a polishing compound for chemical mechanical polishing to polish the plane to be polished.

Abstract: A method for producing a glass substrate for a magnetic disk by polishing a circular glass plate, which comprises a step of polishing the principal plane of the circular glass plate by using a slurry containing at least one water-soluble polymer selected from the group consisting of a water-soluble organic polymer having amino groups, a water-soluble organic polymer having amine salt groups and a water-soluble organic polymer having quaternary ammonium salt groups, and colloidal silica.

Abstract: An object of the present invention is to provide a polishing agent for a semiconductor, which is used for polishing a to-be-polished surface of a silicon dioxide-based material layer in the production of a semiconductor integrated circuit device and which is excellent in the dispersion stability and produces less defects such as scratch and has excellent planarization characteristics in polishing.

Abstract: The present invention is to provide a polishing technique ensuring that when polishing a to-be-polished surface in the production of a semiconductor integrated circuit device, appropriate polishing rate ratios can be obtained between a borophosphosilicate glass material layer and other materials and high planarization of the to-be-polished surface containing a borophosphosilicate glass material layer can be thereby realized. The present invention relates to a polishing agent for chemical mechanical polishing, containing a cerium oxide particle, a water-soluble polyamine, one or more basic compounds selected from the group consisting of monoethanolamine, ethylethanolamine, diethanolamine and ammonia, and water, wherein the polishing agent has a pH of from 10 to 13 and wherein the basic compound is contained in an amount of more than 0.01 mass %.

Abstract: The present invention provides a technique for realizing highly flat surface of a semiconductor integrated circuit employing copper as a wiring metal. The present invention provides a polishing composition containing a neutralized carboxylic acid, an oxidizer and water, wherein a part of the carboxylic acid is an alicyclic resin acid (A) and the pH value is within a range of from 7.5 to 12. The alicyclic resin acid is preferably at least one type selected from the group consisting of abietic acid, an isomer of abietic acid, pimaric acid, an isomer of pimaric acid and derivatives of these, or a rosin. Further, the present invention provides a polishing method of semiconductor integrated circuit surface in which a copper film formed on a surface having a groove for wiring, by using the polishing composition, and the present invention provides a copper wiring for semiconductor integrated circuit formed by this polishing method.

Abstract: To provide a semiconductor polishing compound which is excellent in dispersion stability and removal rate and which has a stabilized polishing property, as it is less susceptible to an influence even when contacted with an alkaline polishing compound during its application to CMP comprising a multistage process. A polishing compound for chemical mechanical polishing to polish a surface to be polished in the production of a semiconductor circuit device, said polishing compound comprising cerium oxide abrasive particles, water and a dicarboxylic acid represented by the formula 1: HOOC(CH2)nCOOH??Formula 1 wherein n is an integer of from 1 to 4, and the pH of said polishing compound at 25° C. being within a range of from 3.5 to 6.

Abstract: To provide a technique employed when a plane to be polished of a silicon dioxide type material layer is polished in production of a semiconductor integrated circuit device, which is capable of polishing protruded portions by priority while suppressing polishing at recessed portions and planarizing the plane to be polished at a high level with an extremely small polishing amount, with small pattern dependence of the polishing rate. In production of a semiconductor integrated circuit device, when a plane to be polished is a plane to be polished of a silicon dioxide type material layer, a polishing compound containing cerium oxide particles, a water-soluble polyamine and water is used as a polishing compound for chemical mechanical polishing to polish the plane to be polished.

Abstract: To provide a polishing technique with which in production of a semiconductor integrated circuit device, when a plane to be polished is polished, an appropriate polishing rate ratio of a polysilicon film to another material can be obtained, whereby high level planarization of a plane to be polished including a polysilicon film can be realized. A polishing compound for chemical mechanical polishing, containing cerium oxide particles, a water-soluble polyamine and water and having a pH within a range of from 10 to 13, is used.

Abstract: A method for producing a glass substrate for a magnetic disk by polishing a circular glass plate, which comprises a step of polishing the principal plane of the circular glass plate by using a slurry containing at least one water-soluble polymer selected from the group consisting of a water-soluble organic polymer having amino groups, a water-soluble organic polymer having amine salt groups and a water-soluble organic polymer having quaternary ammonium salt groups, and colloidal silica.

Abstract: A method for producing a glass substrate for a magnetic disk by polishing a circular glass plate, which comprises a step of polishing the principal plane of the circular glass plate by using a slurry containing a CeO2 crystal powder, the CeO2 crystal powder being obtained in such a manner that a melt containing CeO2 is quenched to obtain an amorphous material, and the amorphous material is subjected to heat treatment to obtain a CeO2 crystals-precipitated amorphous material, which is subjected to acid treatment to separate and extract the CeO2 crystal powder from the CeO2 crystals-precipitated amorphous material.