Patents by Inventor Irina Vasilyeva
Irina Vasilyeva has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7618874Abstract: A method of forming a capacitor includes providing material having an opening therein over a node location on a substrate. A shield is provided within and across the opening, with a void being received within the opening above the shield and a void being received within the opening below the shield. The shield comprises a nitride. Etching is conducted within the opening through the nitride-comprising shield. After the etching, a first capacitor electrode is formed within the opening in electrical connection with the node location. A capacitor dielectric and a second capacitor electrode are formed operatively adjacent the first capacitor electrode. Other aspects and implementations are contemplated.Type: GrantFiled: May 2, 2008Date of Patent: November 17, 2009Assignee: Micron Technology, Inc.Inventors: Kevin Shea, Brett Busch, Farrell Good, Irina Vasilyeva, Vishwanath Bhat
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Publication number: 20090275185Abstract: A method of forming a capacitor includes providing material having an opening therein over a node location on a substrate. A shield is provided within and across the opening, with a void being received within the opening above the shield and a void being received within the opening below the shield. The shield comprises a nitride. Etching is conducted within the opening through the nitride-comprising shield. After the etching, a first capacitor electrode is formed within the opening in electrical connection with the node location. A capacitor dielectric and a second capacitor electrode are formed operatively adjacent the first capacitor electrode. Other aspects and implementations are contemplated.Type: ApplicationFiled: May 2, 2008Publication date: November 5, 2009Inventors: Kevin Shea, Brett Busch, Farrell Good, Irina Vasilyeva, Vishwanath Bhat
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Patent number: 7396570Abstract: Chemical vapor deposition methods of forming titanium silicide including layers on substrates are disclosed. TiCl4 and at least one silane are first fed to the chamber at or above a first volumetric ratio of TiCl4 to silane for a first period of time. The ratio is sufficiently high to avoid measurable deposition of titanium silicide on the substrate. Alternately, no measurable silane is fed to the chamber for a first period of time. Regardless, after the first period, TiCl4 and at least one silane are fed to the chamber at or below a second volumetric ratio of TiCl4 to silane for a second period of time. If at least one silane was fed during the first period of time, the second volumetric ratio is lower than the first volumetric ratio. Regardless, the second feeding is effective to plasma enhance chemical vapor deposit a titanium silicide including layer on the substrate.Type: GrantFiled: March 30, 2006Date of Patent: July 8, 2008Assignee: Micron Technology, Inc.Inventors: Cem Basceri, Irina Vasilyeva, Ammar Derraa, Philip H. Campbell, Gurtej S. Sandhu
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Patent number: 7393563Abstract: Chemical vapor deposition methods of forming titanium suicide including layers on substrates are disclosed. TiCl4 and at least one silane are first fed to the chamber at or above a first volumetric ratio of TiCl4 to silane for a first period of time. The ratio is sufficiently high to avoid measurable deposition of titanium silicide on the substrate. Alternately, no measurable silane is fed to the chamber for a first period of time. Regardless, after the first period, TiCl4 and at least one silane are fed to the chamber at or below a second volumetric ratio of TiCl4 to silane for a second period of time. If at least one silane was fed during the first period of time, the second volumetric ratio is lower than the first volumetric ratio. Regardless, the second feeding is effective to plasma enhance chemical vapor deposit a titanium silicide including layer on the substrate.Type: GrantFiled: March 30, 2006Date of Patent: July 1, 2008Assignee: Micron Technology, Inc.Inventors: Cem Basceri, Irina Vasilyeva, Ammar Derraa, Philip H. Campbell, Gurtej S. Sandhu
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Publication number: 20070164390Abstract: A method of forming a passivation film on a semiconductor substrate is provided and includes forming a first silicon nitride containing layer on the substrate, oxidizing the surface of the first silicon nitride containing layer, and forming a second silicon nitride containing layer on the oxidized surface of the first silicon nitride containing layer. The oxidized surface may be formed by exposing the first silicon nitride containing layer to an oxygen containing gas plasma.Type: ApplicationFiled: December 7, 2006Publication date: July 19, 2007Inventors: Irina Vasilyeva, Richard Pasta
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Publication number: 20070012661Abstract: A method of forming a passivation film on a semiconductor substrate is provided and includes forming a first silicon nitride containing layer on the substrate, oxidizing the surface of the first silicon nitride containing layer, and forming a second silicon nitride containing layer on the oxidized surface of the first silicon nitride containing layer. The oxidized surface may be formed by exposing the first silicon nitride containing layer to an oxygen containing gas plasma.Type: ApplicationFiled: July 13, 2005Publication date: January 18, 2007Inventors: Irina Vasilyeva, Richard Pasta
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Publication number: 20060172088Abstract: Chemical vapor deposition methods of forming titanium silicide including layers on substrates are disclosed. TiCl4 and at least one silane are first fed to the chamber at or above a first volumetric ratio of TiCl4 to silane for a first period of time. The ratio is sufficiently high to avoid measurable deposition of titanium silicide on the substrate. Alternately, no measurable silane is fed to the chamber for a first period of time. Regardless, after the first period, TiCl4 and at least one silane are fed to the chamber at or below a second volumetric ratio of TiCl4 to silane for a second period of time. If at least one silane was fed during the first period of time, the second volumetric ratio is lower than the first volumetric ratio. Regardless, the second feeding is effective to plasma enhance chemical vapor deposit a titanium silicide including layer on the substrate.Type: ApplicationFiled: March 30, 2006Publication date: August 3, 2006Inventors: Cem Basceri, Irina Vasilyeva, Ammar Derraa, Philip Campbell, Gurtej Sandhu
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Publication number: 20060172087Abstract: Chemical vapor deposition methods of forming titanium silicide including layers on substrates are disclosed. TiCl4 and at least one silane are first fed to the chamber at or above a first volumetric ratio of TiCl4 to silane for a first period of time. The ratio is sufficiently high to avoid measurable deposition of titanium silicide on the substrate. Alternately, no measurable silane is fed to the chamber for a first period of time. Regardless, after the first period, TiCl4 and at least one silane are fed to the chamber at or below a second volumetric ratio of TiCl4 to silane for a second period of time. If at least one silane was fed during the first period of time, the second volumetric ratio is lower than the first volumetric ratio. Regardless, the second feeding is effective to plasma enhance chemical vapor deposit a titanium silicide including layer on the substrate.Type: ApplicationFiled: March 30, 2006Publication date: August 3, 2006Inventors: Cem Basceri, Irina Vasilyeva, Ammar Derraa, Philip Campbell, Gurtej Sandhu
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Patent number: 7033642Abstract: Chemical vapor deposition methods of forming titanium silicide including layers on substrates are disclosed. TiCl4 and at least one silane are first fed to the chamber at or above a first volumetric ratio of TiCl4 to silane for a first period of time. The ratio is sufficiently high to avoid measurable deposition of titanium silicide on the substrate. Alternately, no measurable silane is fed to the chamber for a first period of time. Regardless, after the first period, TiCl4 and at least one silane are fed to the chamber at or below a second volumetric ratio of TiCl4 to silane for a second period of time. If at least one silane was fed during the first period of time, the second volumetric ratio is lower than the first volumetric ratio. Regardless, the second feeding is effective to plasma enhance chemical vapor deposit a titanium silicide including layer on the substrate.Type: GrantFiled: September 17, 2003Date of Patent: April 25, 2006Assignee: Micron Technology, Inc.Inventors: Cem Basceri, Irina Vasilyeva, Ammar Derraa, Philip H. Campbell, Gurtej S. Sandhu
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Publication number: 20050079697Abstract: Chemical vapor deposition methods of forming titanium silicide including layers on substrates are disclosed. TiCl4 and at least one silane are first fed to the chamber at or above a first volumetric ratio of TiCl4 to silane for a first period of time. The ratio is sufficiently high to avoid measurable deposition of titanium silicide on the substrate. Alternately, no measurable silane is fed to the chamber for a first period of time. Regardless, after the first period, TiCl4 and at least one silane are fed to the chamber at or below a second volumetric ratio of TiCl4 to silane for a second period of time. If at least one silane was fed during the first period of time, the second volumetric ratio is lower than the first volumetric ratio. Regardless, the second feeding is effective to plasma enhance chemical vapor deposit a titanium silicide including layer on the substrate.Type: ApplicationFiled: September 17, 2003Publication date: April 14, 2005Inventors: Cem Basceri, Irina Vasilyeva, Ammar Derraa, Philip Campbell, Gurtej Sandhu
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Patent number: 6767823Abstract: Chemical vapor deposition methods of forming titanium silicide comprising layers on substrates are disclosed. TiCl4 and at least one silane are first fed to the chamber at or above a first volumetric ratio of TiCl4 to silane for a first period of time. The ratio is sufficiently high to avoid measurable deposition of titanium silicide on the substrate. Alternately, no measurable silane is fed to the chamber for a first period of time. Regardless, after the first period, TiCl4 and at least one silane are fed to the chamber at or below a second volumetric ratio of TiCl4 to silane for a second period of time. If at least one silane was fed during the first period of time, the second volumetric ratio is lower than the first volumetric ratio. Regardless, the second feeding is effective to plasma enhance chemical vapor deposit a titanium silicide comprising layer on the substrate.Type: GrantFiled: March 6, 2002Date of Patent: July 27, 2004Assignee: Micron Technology, Inc.Inventors: Cem Basceri, Irina Vasilyeva, Ammar Derraa, Philip H. Campbell, Gurtej S. Sandhu
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Patent number: 6734051Abstract: A first cleaning is conducted on a plasma enhanced chemical vapor deposition chamber at room ambient pressure. After the first cleaning, elemental titanium comprising layers are chemical vapor deposited on a first plurality of substrates within the chamber using at least TiCl4. Thereafter, titanium silicide comprising layers are plasma enhanced chemical vapor deposited on a second plurality of substrates within the chamber using at least TiCl4 and a silane. Thereafter, a second cleaning is conducted on the chamber at ambient room pressure. In one implementation after the first cleaning, an elemental titanium comprising layer is chemical vapor deposited over internal surfaces of the chamber while no semiconductor substrate is received within the chamber. In another implementation, a titanium silicide comprising layer is chemical vapor deposited over internal surfaces of the chamber while no semiconductor substrate is received within the chamber.Type: GrantFiled: January 13, 2003Date of Patent: May 11, 2004Assignee: Micron Technology, Inc.Inventors: Cem Basceri, Irina Vasilyeva, Ammar Derraa, Philip H. Campbell, Gurtej S. Sandhu
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Patent number: 6730355Abstract: A first substrate is provided within a chemical vapor deposition chamber. A reactive gas mixture comprising TiCl4 and a silane is provided within the chamber effective to first chemically vapor deposit a titanium silicide comprising layer on the first substrate. After the first deposit, the first substrate is removed from the chamber. After the first deposit, a first cleaning is conducted within the chamber with a chlorine comprising gas. After the first cleaning, a second cleaning is conducted within the chamber with a hydrogen comprising gas. After the second cleaning and after the removing, a titanium silicide comprising layer is chemically vapor deposited over a second substrate within the chamber using a reactive gas mixture comprising TiCl4 and a silane. Other implementations are disclosed.Type: GrantFiled: March 6, 2002Date of Patent: May 4, 2004Assignee: Micron Technology, Inc.Inventors: Ammar Derraa, Cem Basceri, Irina Vasilyeva, Philip H. Campbell, Gurtej S. Sandhu
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Publication number: 20030170390Abstract: A first substrate is provided within a chemical vapor deposition chamber. A reactive gas mixture comprising TiCl4 and a silane is provided within the chamber effective to first chemically vapor deposit a titanium silicide comprising layer on the first substrate. After the first deposit, the first substrate is removed from the chamber. After the first deposit, a first cleaning is conducted within the chamber with a chlorine comprising gas. After the first cleaning, a second cleaning is conducted within the chamber with a hydrogen comprising gas. After the second cleaning and after the removing, a titanium silicide comprising layer is chemically vapor deposited over a second substrate within en the chamber using a reactive gas mixture comprising TiCl4 and a silane. Other implementations are disclosed.Type: ApplicationFiled: March 6, 2002Publication date: September 11, 2003Inventors: Ammar Derraa, Cem Basceri, Irina Vasilyeva, Philip H. Campbell, Gurtej S. Sandhu
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Publication number: 20030170982Abstract: Chemical vapor deposition methods of forming titanium silicide comprising layers on substrates are disclosed. TiCl4 and at least one silane are first fed to the chamber at or above a first volumetric ratio of TiCl4 to silane for a first period of time. The ratio is sufficiently high to avoid measurable deposition of titanium silicide on the substrate. Alternately, no measurable silane is fed to the chamber for a first period of time. Regardless, after the first period, TiCl4 and at least one silane are fed to the chamber at or below a second volumetric ratio of TiCl4 to silane for a second period of time. If at least one silane was fed during the first period of time, the second volumetric ratio is lower than the first volumetric ratio. Regardless, the second feeding is effective to plasma enhance chemical vapor deposit a titanium silicide comprising layer on the substrate.Type: ApplicationFiled: March 6, 2002Publication date: September 11, 2003Inventors: Cem Basceri, Irina Vasilyeva, Ammar Derraa, Philip H. Campbell, Gurtej S. Sandhu
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Publication number: 20030170983Abstract: A first cleaning is conducted on a plasma enhanced chemical vapor deposition chamber at room ambient pressure. After the first cleaning, elemental titanium comprising layers are chemical vapor deposited on a first plurality of substrates within the chamber using at least TiCl4. Thereafter, titanium silicide comprising layers are plasma enhanced chemical vapor deposited on a second plurality of substrates within the chamber using at least TiCl4 and a silane. Thereafter, a second cleaning is conducted on the chamber at ambient room pressure. In one implementation after the first cleaning, an elemental titanium comprising layer is chemical vapor deposited over internal surfaces of the chamber while no semiconductor substrate is received within the chamber. In another implementation, a titanium silicide comprising layer is chemical vapor deposited over internal surfaces of the chamber while no semiconductor substrate is received within the chamber.Type: ApplicationFiled: January 13, 2003Publication date: September 11, 2003Inventors: Cem Basceri, Irina Vasilyeva, Ammar Derraa, Philip H. Campbell, Gurtej S. Sandhu
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Patent number: 6586285Abstract: A first cleaning is conducted on a plasma enhanced chemical vapor deposition chamber at room ambient pressure. After the first cleaning, elemental titanium comprising layers are chemical vapor deposited on a first plurality of substrates within the chamber using at least TiCl4. Thereafter, titanium silicide comprising layers are plasma enhanced chemical vapor deposited on a second plurality of substrates within the chamber using at least TiCl4 and a silane. Thereafter, a second cleaning is conducted on the chamber at ambient room pressure. In one implementation after the first cleaning, an elemental titanium comprising layer is chemical vapor deposited over internal surfaces of the chamber while no semiconductor substrate is received within the chamber. In another implementation, a titanium silicide comprising layer is chemical vapor deposited over internal surfaces of the chamber while no semiconductor substrate is received within the chamber.Type: GrantFiled: March 6, 2002Date of Patent: July 1, 2003Assignee: Micron Technology, Inc.Inventors: Cem Basceri, Irina Vasilyeva, Ammar Derraa, Philip H. Campbell, Gurtej S. Sandhu
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Patent number: 5733816Abstract: This invention is a process for depositing tungsten metal on a silicon surface with the deposited layer having improved uniformity of thickness over prior art deposition techniques. The process involves the steps of removing any native silicon dioxide present on the silicon surface, forming a barrier layer which overlies the silicon surface which prevents the upward diffusion of silicon atoms from the polycrystalline surface, and depositing a final tungsten metal layer on top of the barrier layer. The barrier layer is preferably a refractory metal nitride. It may be formed directly by chemical vapor deposition, by reactive sputtering, or it may be formed indirectly by depositing a preliminary tungsten metal layer, subjecting the preliminary layer to a plasma formed from NH.sub.3 and N.sub.2 gases. Both preliminary and final tungsten metal layers are deposited preferably via chemical vapor deposition using the WF.sub.6 and SiH.sub.4 as reactants.Type: GrantFiled: December 13, 1995Date of Patent: March 31, 1998Assignee: Micron Technology, Inc.Inventors: Ravi Iyer, Irina Vasilyeva