Abstract: A method, system and computer program product for calibrating a quantum operation. Layers of two qubit gates that operate in parallel are defined. A gate length for each two qubit gate in a layer of the defined layers is calibrated to correspond to the same gate length, such as the gate length of the two qubit gate in that layer with the slowest operation speed. A portion of the quantum operation is performed by the two qubit gates in the layer with the calibrated gate length. In this manner, two qubit gates that operate in parallel are effectively calibrated in a manner that results in better gate fidelities, fewer frequency collisions and fewer undesirable transitions.

Abstract: Techniques regarding an embedded microstrip transmission line implemented in one more superconducting microwave electronic devices are provided. For example, one or more embodiments described herein can comprise an apparatus, which can include a superconducting material layer positioned on a raised portion of a dielectric substrate. The raised portion can extend from a surface of the dielectric substrate. The apparatus can also comprise a dielectric film that covers at least a portion of the superconducting material layer and the raised portion of the dielectric substrate.

Abstract: A field effect transistor (FET) includes a substrate; a channel material located on the substrate, the channel material comprising one of graphene or a nanostructure; a gate located on a first portion of the channel material; and a contact aligned to the gate, the contact comprising one of a metal silicide, a metal carbide, and a metal, the contact being located over a source region and a drain region of the FET, the source region and the drain region comprising a second portion of the channel material.

Abstract: Techniques for using stark tone pulses to mitigate cross-resonance collision in qubits are presented. A tone management component can control application of pulses to qubits by a tone generator component to mitigate undesirable frequency collisions between qubits. The tone generator component (TGC) can apply an off-resonant tone pulse to a qubit during a gate to induce a stark shift. TGC can apply a cross-resonance tone pulse to a control qubit at a frequency associated with the qubit, wherein the frequency can be stark shifted based on the off-resonant tone pulse. The qubit can be a target qubit, the control qubit itself, or a spectator qubit that can be coupled to the target qubit or the control qubit. The gate can be a cross-resonance gate, a two-qubit gate, or a measurement gate that can utilize an echo sequence, a target rotary, or active cancellation.

Abstract: Devices, systems, methods, and/or computer-implemented methods that can facilitate a qubit device comprising a superconducting circuit provided on an encapsulated vacuum cavity are provided. According to an embodiment, a device can comprise a substrate having an encapsulated vacuum cavity provided on the substrate. The device can further comprise a superconducting circuit provided on the encapsulated vacuum cavity.

Abstract: Systems, computer-implemented methods, and/or computer program products that can facilitate target qubit decoupling in an echoed cross-resonance gate are provided. According to an embodiment, a computer-implemented method can comprise receiving, by a system operatively coupled to a processor, both a cross-resonance pulse and a decoupling pulse at a target qubit. The cross-resonance pulse propagates to the target qubit via a control qubit. The computer-implemented method can further comprise receiving, by the system, a state inversion pulse at the control qubit. The computer-implemented method can further comprise receiving, by the system, both a phase-inverted cross-resonance pulse and a phase-inverted decoupling pulse at the target qubit. The phase-inverted cross-resonance pulse propagates to the target qubit via the control qubit.

Abstract: Techniques for using stark tone pulses to mitigate cross-resonance collision in qubits are presented. A tone management component can control application of pulses to qubits by a tone generator component to mitigate undesirable frequency collisions between qubits. The tone generator component (TGC) can apply an off-resonant tone pulse to a qubit during a gate to induce a stark shift. TGC can apply a cross-resonance tone pulse to a control qubit at a frequency associated with the qubit, wherein the frequency can be stark shifted based on the off-resonant tone pulse. The qubit can be a target qubit, the control qubit itself, or a spectator qubit that can be coupled to the target qubit or the control qubit. The gate can be a cross-resonance gate, a two-qubit gate, or a measurement gate that can utilize an echo sequence, a target rotary, or active cancellation.

Abstract: Techniques for using stark tone pulses to mitigate cross-resonance collision in qubits are presented. A tone management component can control application of pulses to qubits by a tone generator component to mitigate undesirable frequency collisions between qubits. The tone generator component (TGC) can apply an off-resonant tone pulse to a qubit during a gate to induce a stark shift. TGC can apply a cross-resonance tone pulse to a control qubit at a frequency associated with the qubit, wherein the frequency can be stark shifted based on the off-resonant tone pulse. The qubit can be a target qubit, the control qubit itself, or a spectator qubit that can be coupled to the target qubit or the control qubit. The gate can be a cross-resonance gate, a two-qubit gate, or a measurement gate that can utilize an echo sequence, a target rotary, or active cancellation.

Abstract: Systems and techniques that facilitate mapping a heavy-hex qubit connection topology to a rectilinear physical qubit layout are provided. In various embodiments, a device can comprise a qubit lattice on a substrate. In various aspects, the qubit lattice can comprise one or more first qubit tiles. In various cases, the one or more first qubit tiles can have a first shape. In various instances, the qubit lattice can further comprise one or more second qubit tiles. In various cases, the one or more second qubit tiles can have a second shape. In various aspects, the one or more first qubit tiles can be tessellated with the one or more second qubit tiles.

Abstract: Systems, computer-implemented methods, and/or computer program products that can facilitate target qubit decoupling in an echoed cross-resonance gate are provided. According to an embodiment, a computer-implemented method can comprise receiving, by a system operatively coupled to a processor, both a cross-resonance pulse and a decoupling pulse at a target qubit. The cross-resonance pulse propagates to the target qubit via a control qubit. The computer-implemented method can further comprise receiving, by the system, a state inversion pulse at the control qubit. The computer-implemented method can further comprise receiving, by the system, both a phase-inverted cross-resonance pulse and a phase-inverted decoupling pulse at the target qubit. The phase-inverted cross-resonance pulse propagates to the target qubit via the control qubit.

Abstract: Devices, systems, methods, and/or computer-implemented methods that can facilitate a qubit device comprising a vacuum encapsulated Josephson junction are provided. According to an embodiment, a device can comprise a substrate having an encapsulated vacuum cavity provided on the substrate. The device can further comprise one or more superconducting components of a superconducting circuit provided inside the encapsulated vacuum cavity.

Abstract: Techniques for using stark tone pulses to mitigate cross-resonance collision in qubits are presented. A tone management component can control application of pulses to qubits by a tone generator component to mitigate undesirable frequency collisions between qubits. The tone generator component (TGC) can apply an off-resonant tone pulse to a qubit during a gate to induce a stark shift. TGC can apply a cross-resonance tone pulse to a control qubit at a frequency associated with the qubit, wherein the frequency can be stark shifted based on the off-resonant tone pulse. The qubit can be a target qubit, the control qubit itself, or a spectator qubit that can be coupled to the target qubit or the control qubit. The gate can be a cross-resonance gate, a two-qubit gate, or a measurement gate that can utilize an echo sequence, a target rotary, or active cancellation.

Abstract: Systems, devices, computer-implemented methods, and/or computer program products that facilitate dynamic control of ZZ interactions for quantum computing devices. In one example, a quantum device can comprise a biasing component that is operatively coupled to first and second qubits via respective first and second drive lines. The biasing component can facilitate dynamic control of ZZ interactions between the first and second qubits using continuous wave (CW) tones applied via the respective first and second drive lines.

Abstract: Techniques regarding resetting highly excited qubits are provided. For example, one or more embodiments described herein can comprise a system, which can comprise a memory that can store computer executable components. The system can also comprise a processor, operably coupled to the memory, and that can execute the computer executable components stored in the memory. The computer executable components can comprise a reset component that can de-excite a qubit system to a target state by transitioning a population of a first excited state of the qubit system to a ground state and by applying a signal to the qubit system that transitions a population of a second excited state to the first excited state.

Abstract: Techniques regarding an embedded microstrip transmission line implemented in one more superconducting microwave electronic devices are provided. For example, one or more embodiments described herein can comprise an apparatus, which can include a superconducting material layer positioned on a raised portion of a dielectric substrate. The raised portion can extend from a surface of the dielectric substrate. The apparatus can also comprise a dielectric film that covers at least a portion of the superconducting material layer and the raised portion of the dielectric substrate.

Abstract: Systems and techniques that facilitate qubit pulse calibration via canary parameter monitoring are provided. In various embodiments, a system can comprise a measurement component that can measure a canary parameter associated with a qubit control channel. In various embodiments, the system can further comprise a scaling component that can modify a plurality of parameters associated with the qubit control channel via a scaling factor. In various cases, the scaling factor can be based on the canary parameter. In various embodiments, the canary parameter can be a rotation error of a qubit driven by a microwave pulse transmitted along the qubit control channel. In various embodiments, the plurality of parameters can be amplitudes of a plurality of microwave pulses transmitted along the qubit control channel. In various embodiments, the plurality of parameters can be phases of a plurality of microwave pulses transmitted along the qubit control channel.

Abstract: Systems, devices, computer-implemented methods, and/or computer program products that facilitate dynamic control of ZZ interactions for quantum computing devices. In one example, a quantum device can comprise a biasing component that is operatively coupled to first and second qubits via respective first and second drive lines. The biasing component can facilitate dynamic control of ZZ interactions between the first and second qubits using continuous wave (CW) tones applied via the respective first and second drive lines.

Abstract: Techniques regarding an embedded microstrip transmission line implemented in one more superconducting microwave electronic devices are provided. For example, one or more embodiments described herein can comprise an apparatus, which can include a superconducting material layer positioned on a raised portion of a dielectric substrate. The raised portion can extend from a surface of the dielectric substrate. The apparatus can also comprise a dielectric film that covers at least a portion of the superconducting material layer and the raised portion of the dielectric substrate.

Abstract: Techniques regarding an embedded microstrip transmission line implemented in one more superconducting microwave electronic devices are provided. For example, one or more embodiments described herein can comprise an apparatus, which can include a superconducting material layer positioned on a raised portion of a dielectric substrate. The raised portion can extend from a surface of the dielectric substrate. The apparatus can also comprise a dielectric film that covers at least a portion of the superconducting material layer and the raised portion of the dielectric substrate.

Abstract: Devices, systems, methods, and/or computer-implemented methods that can facilitate a qubit device comprising a superconducting circuit provided on an encapsulated vacuum cavity are provided. According to an embodiment, a device can comprise a substrate having an encapsulated vacuum cavity provided on the substrate. The device can further comprise a superconducting circuit provided on the encapsulated vacuum cavity.