Patents by Inventor Isaac Wildeson
Isaac Wildeson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11959800Abstract: An automotive headlight is disclosed including: an optical unit including a plurality of optical elements, each optical element having a different central direction; a segmented light-emitting diode (LED) chip including a plurality of LEDs that are separated by trenches formed on the segmented LED chip and arranged in a plurality of sections, each section being aligned with a different respective optical element, and each section including at least one first LED and at least one second LED; and a controller configured to: apply a forward bias to each of the first LEDs, apply a reverse bias to each of the second LEDs, and change a brightness of the first LEDs in any section based on a signal generated by the second LED in that section.Type: GrantFiled: July 26, 2022Date of Patent: April 16, 2024Assignee: Lumileds LLCInventors: Erik Charles Nelson, Isaac Wildeson, Parijat Deb, Kenneth Vampola
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Patent number: 11961941Abstract: An LED array comprises a first mesa comprising a top surface, at least a first LED including a first p-type layer, a first n-type layer and a first color active region and a tunnel junction on the first LED, a second n-type layer on the tunnel junction, the second n-type layer comprising at least one n-type III-nitride layer with >10% Al mole fraction and at least one n-type III-nitride layer with <10% Al mole fraction. The LED array further comprises an adjacent mesa comprising a top surface, the first LED, a second LED including the second n-type layer, a second p-type layer and a second color active region. A first trench separates the first mesa and the adjacent mesa, cathode metallization in the first trench and in electrical contact with the first and the second color active regions of the adjacent mesa, and anode metallization contacts on the n-type layer of the first mesa and on the anode layer of the adjacent mesa.Type: GrantFiled: March 3, 2023Date of Patent: April 16, 2024Assignee: Lumileds LLCInventors: Robert Armitage, Isaac Wildeson
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Patent number: 11923402Abstract: Described are light emitting diode (LED) devices including a combination of electroluminescent and photo-luminescent active regions in the same wafer to provide LEDs with emission spectra that are adjustable after epitaxial growth. The LED device includes a multilayer anode contact comprising a reflecting metal and at least one transparent conducting oxide layer in between the metal and the p-type layer surface. The thickness of the transparent conducting oxide layer may vary for LEDs fabricated with different emission spectra.Type: GrantFiled: January 25, 2023Date of Patent: March 5, 2024Assignee: Lumileds LLCInventors: Robert Armitage, Isaac Wildeson
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Patent number: 11923401Abstract: Described are arrays of light emitting diode (LED) devices and methods for their manufacture. An LED array comprises a first mesa comprising a top surface, at least a first LED including a first p-type layer, a first n-type layer and a first color active region and a tunnel junction on the first LED, the top surface comprising a second n-type layer on the tunnel junction. The LED array further comprises an adjacent mesa comprising a top surface, the first LED, a second LED including the second n-type layer, a second p-type layer and a second color active region. There is a first trench separating the first mesa and the adjacent mesa, n-type metallization in the first trench and in electrical contact with the first color active region and the second color active region of the adjacent mesa, and p-type metallization contacts on the n-type layer of the first mesa and on the p-type layer of the adjacent mesa.Type: GrantFiled: June 16, 2022Date of Patent: March 5, 2024Assignee: Lumileds LLCInventors: Robert Armitage, Isaac Wildeson
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Patent number: 11923398Abstract: An LED array comprises a first mesa comprising a top surface, at least a first LED including a first p-type layer, a first n-type layer and a first color active region and a tunnel junction on the first LED, a second n-type layer on the tunnel junction. The LED array further comprises an adjacent mesa comprising a top surface, the first LED, a second LED including the second n-type layer, a second p-type layer and a second color active region. A first trench separates the first mesa and the adjacent mesa, cathode metallization in the first trench and in electrical contact with the first and the second color active regions of the adjacent mesa, and anode metallization contacts on the n-type layer of the first mesa and on the anode layer of the adjacent mesa. The devices and methods for their manufacture include a thin film transistor (TFT).Type: GrantFiled: November 12, 2020Date of Patent: March 5, 2024Assignee: Lumileds LLCInventors: Robert Armitage, Isaac Wildeson
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Patent number: 11901481Abstract: An inventive light-emitting apparatus comprises an array of multiple light-emitting pixels, and one or more transmissive optical elements positioned at a light-emitting surface of the light-emitting pixel array. One or more of the light-emitting pixels is defective. Each optical element is positioned at a location of a corresponding defective light-emitting pixel, and extends over that defective pixel and laterally at least partly over one or more adjacent pixels. Each optical element transmits laterally at least a portion of light emitted by the adjacent pixels to propagate away from the array from the location of the defective pixel, reducing the appearance of the defective pixel.Type: GrantFiled: December 1, 2021Date of Patent: February 13, 2024Assignee: Lumileds LLCInventors: Toni Lopez, Hossein Lotfi, Isaac Wildeson, Oleg Shchekin
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Patent number: 11777061Abstract: Described at light emitting diode (LED) devices emitting different colors on the same wafer, which facilitates their integration with close packing density (not requiring transfer of devices from two different wafers to a third substrate module). The LED devices and driving methods allow light of different colors and similar luminance levels to be emitted for given input current.Type: GrantFiled: January 25, 2023Date of Patent: October 3, 2023Assignee: Lumileds LLCInventors: Robert Armitage, Isaac Wildeson
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Publication number: 20230223490Abstract: An LED array comprises a first mesa comprising a top surface, at least a first LED including a first p-type layer, a first n-type layer and a first color active region and a tunnel junction on the first LED, a second n-type layer on the tunnel junction, the second n-type layer comprising at least one n-type III-nitride layer with >10% Al mole fraction and at least one n-type III-nitride layer with <10% Al mole fraction. The LED array further comprises an adjacent mesa comprising a top surface, the first LED, a second LED including the second n-type layer, a second p-type layer and a second color active region. A first trench separates the first mesa and the adjacent mesa, cathode metallization in the first trench and in electrical contact with the first and the second color active regions of the adjacent mesa, and anode metallization contacts on the n-type layer of the first mesa and on the anode layer of the adjacent mesa.Type: ApplicationFiled: March 3, 2023Publication date: July 13, 2023Applicant: Lumileds LLCInventors: Robert Armitage, Isaac Wildeson
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Patent number: 11677043Abstract: Described are light emitting diode (LED) devices including a combination of electroluminescent quantum wells and photo-luminescent active regions in the same wafer. A first group of QWs with shortest emission wavelength is placed between the p- and n-layers of a p-n junction. Other groups of QWs with longer wavelengths are placed outside the p-n junction in a part of the LED structure where electrical injection of minority carriers does not occur. Electroluminescence emitted by the first group of QWs is absorbed by other group(s) and re-emitted as longer wavelength light. The color of an individual die made on the wafer can be controlled by either etching away unwanted groups of longer-wavelength QWs at the position of that die, or keeping them intact. Wavelength-selective mirrors that increase down conversion efficiency may be selectively applied to die where longer wavelength emission is desired.Type: GrantFiled: September 8, 2022Date of Patent: June 13, 2023Assignee: Lumileds LLCInventors: Isaac Wildeson, Robert Armitage
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Publication number: 20230170379Abstract: Described are light emitting diode (LED) devices including a combination of electroluminescent and photo-luminescent active regions in the same wafer to provide LEDs with emission spectra that are adjustable after epitaxial growth. The LED device includes a multilayer anode contact comprising a reflecting metal and at least one transparent conducting oxide layer in between the metal and the p-type layer surface. The thickness of the transparent conducting oxide layer may vary for LEDs fabricated with different emission spectra.Type: ApplicationFiled: January 25, 2023Publication date: June 1, 2023Applicant: Lumileds LLCInventors: Robert Armitage, Isaac Wildeson
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Publication number: 20230155065Abstract: An LED device comprises a mesa comprising semiconductor layers, the semiconductor layers including an N-type layer, an active layer, and a P-type layer, the mesa having a top surface and at least one side wall, the at least one side wall defining a trench have a bottom surface. A transparent conductive layer is on at least one side wall and in the trench. A cathode layer is in the trench on the transparent conductive layer. A p-type contact is on the top surface of the mesa. In some embodiments, a spacer layer is formed between the transparent conductive layer and the cathode layer. In other embodiments, a distributed Bragg reflector is formed between the transparent conductive layer and the cathode layer.Type: ApplicationFiled: November 7, 2022Publication date: May 18, 2023Applicant: Lumileds LLCInventors: Isaac Wildeson, Hossein Lotfi, Toni Lopez
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Publication number: 20230154969Abstract: An LED device comprises a mesa comprising semiconductor layers, the semiconductor layers including an N-type layer, an active layer, and a P-type layer, the mesa having a top surface and at least one side wall, the at least one side wall defining a trench have a bottom surface. A transparent conductive layer is on at least one side wall and in the trench. A cathode layer is in the trench on the transparent conductive layer. A p-type contact is on the top surface of the mesa. In some embodiments, a spacer layer is formed between the transparent conductive layer and the cathode layer. In other embodiments, a distributed Bragg reflector is formed between the transparent conductive layer and the cathode layer.Type: ApplicationFiled: November 7, 2022Publication date: May 18, 2023Applicant: Lumileds LLCInventors: Isaac Wildeson, Hossein Lotfi, Toni Lopez
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Publication number: 20230155070Abstract: Described are light emitting diode (LED) devices having a patterned dielectric layer on a substrate and methods for effectively growing epitaxial III-nitride layers on them. A nucleation layer, comprising a III-nitride material, is grown on a substrate before any patterning takes place. The patterned dielectric layer comprises a first plurality of features and a second plurality of features, where the second plurality of features has a height larger than the height of the first plurality of features. The second plurality of features aligns with the cathode layer of the trench.Type: ApplicationFiled: November 7, 2022Publication date: May 18, 2023Applicant: Lumileds LLCInventors: Toni Lopez, Isaac Wildeson, Erik William Young
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Publication number: 20230154968Abstract: Described are light emitting diode (LED) devices having a patterned dielectric layer on a substrate and methods for effectively growing epitaxial III-nitride layers on them. A nucleation layer, comprising a III-nitride material, is grown on a substrate before any patterning takes place. The patterned dielectric layer comprises a first plurality of features and a second plurality of features, where the second plurality of features has a height larger than the height of the first plurality of features. The second plurality of features aligns with the cathode layer of the trench.Type: ApplicationFiled: November 7, 2022Publication date: May 18, 2023Applicant: Lumileds LLCInventors: Toni Lopez, Isaac Wildeson, Erik William Young
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Publication number: 20230155066Abstract: An LED device comprises a mesa comprising semiconductor layers, the semiconductor layers including an N-type layer, an active layer, and a P-type layer, the mesa having a top surface and at least one side wall, the at least one side wall defining a trench have a bottom surface. A transparent conductive layer is on at least one side wall and in the trench. A cathode layer is in the trench on the transparent conductive layer. A p-type contact is on the top surface of the mesa. In some embodiments, a spacer layer is formed between the transparent conductive layer and the cathode layer. In other embodiments, a distributed Bragg reflector is formed between the transparent conductive layer and the cathode layer.Type: ApplicationFiled: November 7, 2022Publication date: May 18, 2023Applicant: Lumileds LLCInventors: Isaac Wildeson, Hossein Lotfi, Toni Lopez
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Publication number: 20230138761Abstract: A red LED includes a semiconductor LED layer having an active InGaN layer with intrinsic emission spectrum having LDom in a range of from 580 nm to 620 nm. A filter is positioned over the semiconductor LED layer to filter shorter wavelengths of the intrinsic emission spectrum and shift LDom by between 5 nm to 20 nm to a longer wavelength.Type: ApplicationFiled: April 16, 2021Publication date: May 4, 2023Applicant: Lumileds LLCInventors: Robert Armitage, Isaac Wildeson
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Publication number: 20230126041Abstract: A light emitting diode (LED) device comprises a plurality of pixels on a backplane, each pixel comprising: semiconductor layers, which include an N-type layer, an active region, and a P-type layer; a cathode electrically contacting the N-type layer; an anode comprising anode segments electrically contacting respective portions of the P-type layer; one or more dielectric materials insulating: the active region and the P-type layer from the cathode, the anode segments from each other, and the anode segments from the cathode; and a plurality of interconnects, each respective interconnect affixing a respective anode segment to the backplane. Methods of making and use the devices are also provided.Type: ApplicationFiled: August 30, 2022Publication date: April 27, 2023Applicant: Lumileds LLCInventors: Isaac Wildeson, Hossein Lotfi, Ronald Bonne, Toni Lopez
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Patent number: 11631786Abstract: An LED array comprises a first mesa comprising a top surface, at least a first LED including a first p-type layer, a first n-type layer and a first color active region and a tunnel junction on the first LED, a second n-type layer on the tunnel junction, the second n-type layer comprising at least one n-type III-nitride layer with >10% Al mole fraction and at least one n-type III-nitride layer with <10% Al mole fraction. The LED array further comprises an adjacent mesa comprising a top surface, the first LED, a second LED including the second n-type layer, a second p-type layer and a second color active region. A first trench separates the first mesa and the adjacent mesa, cathode metallization in the first trench and in electrical contact with the first and the second color active regions of the adjacent mesa, and anode metallization contacts on the n-type layer of the first mesa and on the anode layer of the adjacent mesa.Type: GrantFiled: March 3, 2021Date of Patent: April 18, 2023Assignee: Lumileds LLCInventors: Robert Armitage, Isaac Wildeson
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Patent number: 11626538Abstract: Described at light emitting diode (LED) devices emitting different colors on the same wafer, which facilitates their integration with close packing density (not requiring transfer of devices from two different wafers to a third substrate module). The LED devices and driving methods allow light of different colors and similar luminance levels to be emitted for given input current.Type: GrantFiled: March 3, 2021Date of Patent: April 11, 2023Assignee: Lumileds LLCInventors: Robert Armitage, Isaac Wildeson
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Patent number: 11600656Abstract: Described are light emitting diode (LED) devices including a combination of electroluminescent and photo-luminescent active regions in the same wafer to provide LEDs with emission spectra that are adjustable after epitaxial growth. The LED device includes a multilayer anode contact comprising a reflecting metal and at least one transparent conducting oxide layer in between the metal and the p-type layer surface. The thickness of the transparent conducting oxide layer may vary for LEDs fabricated with different emission spectra.Type: GrantFiled: March 3, 2021Date of Patent: March 7, 2023Assignee: Lumileds LLCInventors: Robert Armitage, Isaac Wildeson