Patents by Inventor Isaac Wildeson
Isaac Wildeson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20210193730Abstract: Described are arrays of light emitting diode (LED) devices and methods for their manufacture. An LED array comprises a first mesa comprising a top surface, at least a first LED including a first p-type layer, a first n-type layer and a first color active region and a tunnel junction on the first LED, the top surface comprising a second n-type layer on the tunnel junction. The LED array further comprises an adjacent mesa comprising a top surface, the first LED, a second LED including the second n-type layer, a second p-type layer and a second color active region. There is a first trench separating the first mesa and the adjacent mesa, n-type metallization in the first trench and in electrical contact with the first color active region and the second color active region of the adjacent mesa, and p-type metallization contacts on the n-type layer of the first mesa and on the p-type layer of the adjacent mesa.Type: ApplicationFiled: December 23, 2019Publication date: June 24, 2021Inventors: Robert Armitage, Isaac Wildeson
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Publication number: 20210193863Abstract: Described are light emitting diode (LED) devices having patterned substrates and methods for effectively growing epitaxial III-nitride layers on them. A nucleation layer, comprising a III-nitride material, is grown on a substrate before any patterning takes place. The nucleation layer results in growth of smooth coalesced III-nitride layers over the patterns.Type: ApplicationFiled: December 19, 2019Publication date: June 24, 2021Applicant: Lumileds LLCInventors: Isaac Wildeson, Toni Lopez, Hee-Jin Kim, Robert Armitage, Parijat Deb
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Publication number: 20210193869Abstract: Light emitting diode (LED) devices comprise: a patterned substrate comprising a substrate body, a plurality of integral features protruding from the substrate body, and a base surface defined by spaces between the plurality of integral features; a selective layer comprising a dielectric material located on the surfaces of the integral features, wherein there is an absence of the selective layer on the base surface; and a III-nitride layer comprising a III-nitride material on the selective layer and the base surface.Type: ApplicationFiled: December 19, 2019Publication date: June 24, 2021Applicant: Lumileds LLCInventors: Isaac Wildeson, Toni Lopez, Robert Armitage, Parijat Deb
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Publication number: 20210193731Abstract: An LED array comprises a first mesa comprising a top surface, at least a first LED including a first p-type layer, a first n-type layer and a first color active region and a tunnel junction on the first LED, a second n-type layer on the tunnel junction. The LED array further comprises an adjacent mesa comprising a top surface, the first LED, a second LED including the second n-type layer, a second p-type layer and a second color active region. A first trench separates the first mesa and the adjacent mesa, cathode metallization in the first trench and in electrical contact with the first and the second color active regions of the adjacent mesa, and anode metallization contacts on the n-type layer of the first mesa and on the anode layer of the adjacent mesa. The devices and methods for their manufacture include a thin film transistor (TFT).Type: ApplicationFiled: November 12, 2020Publication date: June 24, 2021Applicant: Lumileds LLCInventors: Robert Armitage, Isaac Wildeson
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Publication number: 20200411720Abstract: A light emitting diode (LED) array may include a first pixel and a second pixel on a substrate. The first pixel and the second pixel may include one or more tunnel junctions on one or more LEDs. The LED array may include a first trench between the first pixel and the second pixel. The trench may extend to the substrate.Type: ApplicationFiled: September 2, 2020Publication date: December 31, 2020Applicant: Lumileds LLCInventors: Isaac Wildeson, Parijat Deb, Robert Armitage
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Publication number: 20200413500Abstract: An automotive headlight is disclosed including: an optical unit including a plurality of optical elements, each optical element having a different central direction; a segmented light-emitting diode (LED) chip including a plurality of LEDs that are separated by trenches formed on the segmented LED chip and arranged in a plurality of sections, each section being aligned with a different respective optical element, and each section including at least one first LED and at least one second LED; and a controller configured to: apply a forward bias to each of the first LEDs, apply a reverse bias to each of the second LEDs, and change a brightness of the first LEDs in any section based on a signal generated by the second LED in that section.Type: ApplicationFiled: September 15, 2020Publication date: December 31, 2020Inventors: Erik Charles Nelson, Isaac Wildeson, Parijat Deb, Kenneth Vampola
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Publication number: 20200411724Abstract: An LED structure includes an epi layer grown on a substrate and a plurality of dielectric nanoantennas positioned within the epi layer. The dielectric antennas can be periodically arranged to reduce reabsorption of light and redirect oblique incident light to improve overall light coupling efficiency. Each of the dielectric nanoantennas can have a top, a bottom, a height less than 1000 nm and greater than 200 nm and a diameter less than 2000 nm and greater than 300 nm.Type: ApplicationFiled: June 27, 2019Publication date: December 31, 2020Applicant: Lumileds LLCInventors: Aimi ABASS, Toni LOPEZ, Isaac WILDESON
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Publication number: 20200335657Abstract: In a method according to embodiments of the invention, a semiconductor structure including a III-nitride light emitting layer disposed between a p-type region and an n-type region is grown. The p-type region is buried within the semiconductor structure. A trench is formed in the semiconductor structure. The trench exposes the p-type region. After forming the trench, the semiconductor structure is annealed.Type: ApplicationFiled: July 2, 2020Publication date: October 22, 2020Applicant: Lumileds LLCInventors: Isaac Wildeson, Erik Charles Nelson, Parijat Deb
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Patent number: 10813184Abstract: An automotive headlight is disclosed including: an optical unit including a plurality of optical elements, each optical element having a different central direction; a segmented light-emitting diode (LED) chip including a plurality of LEDs that are separated by trenches formed on the segmented LED chip and arranged in a plurality of sections, each section being aligned with a different respective optical element, and each section including at least one first LED and at least one second LED; and a controller configured to: apply a forward bias to each of the first LEDs, apply a reverse bias to each of the second LEDs, and change a brightness of the first LEDs in any section based on a signal generated by the second LED in that section.Type: GrantFiled: March 27, 2019Date of Patent: October 20, 2020Assignee: Lumileds LLCInventors: Erik Charles Nelson, Isaac Wildeson, Parijat Deb, Kenneth Vampola
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Patent number: 10749070Abstract: In a method according to embodiments of the invention, a semiconductor structure including a III-nitride light emitting layer disposed between a p-type region and an n-type region is grown. The p-type region is buried within the semiconductor structure. A trench is formed in the semiconductor structure. The trench exposes the p-type region. After forming the trench, the semiconductor structure is annealed.Type: GrantFiled: May 11, 2017Date of Patent: August 18, 2020Assignee: LUMILEDS LLCInventors: Isaac Wildeson, Erik Charles Nelson, Parijat Deb
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Publication number: 20200243331Abstract: Described herein are methods for using remote plasma chemical vapor deposition (RP-CVD) and sputtering deposition to grow layers for light emitting devices. A method includes growing a light emitting device structure on a growth substrate, and growing a tunnel junction on the light emitting device structure using at least one of RP-CVD and sputtering deposition. The tunnel junction includes a p++ layer in direct contact with a p-type region, where the p++ layer is grown by using at least one of RP-CVD and sputtering deposition. Another method for growing a device includes growing a p-type region over a growth substrate using at least one of RP-CVD and sputtering deposition, and growing further layers over the p-type region. Another method for growing a device includes growing a light emitting region and an n-type region using at least one of RP-CVD and sputtering deposition over a p-type region.Type: ApplicationFiled: April 14, 2020Publication date: July 30, 2020Applicant: Lumileds LLCInventors: Isaac Wildeson, Parijat Deb, Erik Charles Nelson, Junko Kobayashi
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Publication number: 20200235263Abstract: Embodiments of the invention include a III-nitride light emitting layer disposed between an n-type region and a p-type region, a III-nitride layer including a nanopipe defect, and a nanopipe terminating layer disposed between the III-nitride light emitting layer and the III-nitride layer comprising a nanopipe defect. The nanopipe terminates in the nanopipe terminating layer.Type: ApplicationFiled: April 8, 2020Publication date: July 23, 2020Applicant: Lumileds LLCInventors: Isaac Wildeson, Patrick Nolan Grillot, Tigran Nshanian, Parijat Deb
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Publication number: 20200203158Abstract: Described herein are methods for using remote plasma chemical vapor deposition (RP-CVD) and sputtering deposition to grow layers for light emitting devices. A method includes growing a light emitting device structure on a growth substrate, and growing a tunnel junction on the light emitting device structure using at least one of RP-CVD and sputtering deposition. The tunnel junction includes a p++ layer in direct contact with a p-type region, where the p++ layer is grown by using at least one of RP-CVD and sputtering deposition. Another method for growing a device includes growing a p-type region over a growth substrate using at least one of RP-CVD and sputtering deposition, and growing further layers over the p-type region. Another method for growing a device includes growing a light emitting region and an n-type region using at least one of RP-CVD and sputtering deposition over a p-type region.Type: ApplicationFiled: February 27, 2020Publication date: June 25, 2020Applicant: Lumileds LLCInventors: Isaac Wildeson, Parijat Deb, Erik Charles Nelson, Junko Kobayashi
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Publication number: 20200127166Abstract: Described herein are methods for growing light emitting devices under ultra-violet (UV) illumination. A method includes growing a III-nitride n-type layer over a III-nitride p-type layer under UV illumination. Another method includes growing a light emitting device structure on a growth substrate and growing a tunnel junction on the light emitting device structure, where certain layers are grown under UV illumination. Another method includes forming a III-nitride tunnel junction n-type layer over the III-nitride p-type layer to form a tunnel junction light emitting diode. A surface of the III-nitride tunnel junction n-type layer is done under illumination during an initial period and a remainder of the formation is completed absent illumination. The UV light has photon energy higher than the III-nitride p-type layer's band gap energy. The UV illumination inhibits formation of Mg—H complexes within the III-nitride p-type layer resulting from hydrogen present in a deposition chamber.Type: ApplicationFiled: December 17, 2019Publication date: April 23, 2020Applicant: Lumileds LLCInventors: Tsutomu Ishikawa, Isaac Wildeson, Erik Charles Nelson, Parijat Deb
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Patent number: 10622206Abstract: Described herein are methods for using remote plasma chemical vapor deposition (RP-CVD) and sputtering deposition to grow layers for light emitting devices. A method includes growing a light emitting device structure on a growth substrate, and growing a tunnel junction on the light emitting device structure using at least one of RP-CVD and sputtering deposition. The tunnel junction includes a p++ layer in direct contact with a p-type region, where the p++ layer is grown by using at least one of RP-CVD and sputtering deposition. Another method for growing a device includes growing a p-type region over a growth substrate using at least one of RP-CVD and sputtering deposition, and growing further layers over the p-type region. Another method for growing a device includes growing a light emitting region and an n-type region using at least one of RP-CVD and sputtering deposition over a p-type region.Type: GrantFiled: February 13, 2019Date of Patent: April 14, 2020Assignee: Lumileds LLCInventors: Isaac Wildeson, Parijat Deb, Erik Charles Nelson, Junko Kobayashi
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Patent number: 10541352Abstract: Described herein are methods for growing light emitting devices under ultra-violet (UV) illumination. A method includes growing a III-nitride n-type layer over a III-nitride p-type layer under UV illumination. Another method includes growing a light emitting device structure on a growth substrate and growing a tunnel junction on the light emitting device structure, where certain layers are grown under UV illumination. Another method includes forming a III-nitride tunnel junction n-type layer over the III-nitride p-type layer to form a tunnel junction light emitting diode. A surface of the III-nitride tunnel junction n-type layer is done under illumination during an initial period and a remainder of the formation is completed absent illumination. The UV light has photon energy higher than the III-nitride p-type layer's band gap energy. The UV illumination inhibits formation of Mg—H complexes within the III-nitride p-type layer resulting from hydrogen present in a deposition chamber.Type: GrantFiled: October 25, 2017Date of Patent: January 21, 2020Inventors: Tsutomu Ishikawa, Isaac Wildeson, Erik Charles Nelson, Parijat Deb
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Publication number: 20190223267Abstract: An automotive headlight is disclosed including: an optical unit including a plurality of optical elements, each optical element having a different central direction; a segmented light-emitting diode (LED) chip including a plurality of LEDs that are separated by trenches formed on the segmented LED chip and arranged in a plurality of sections, each section being aligned with a different respective optical element, and each section including at least one first LED and at least one second LED; and a controller configured to: apply a forward bias to each of the first LEDs, apply a reverse bias to each of the second LEDs, and change a brightness of the first LEDs in any section based on a signal generated by the second LED in that section.Type: ApplicationFiled: March 27, 2019Publication date: July 18, 2019Applicant: Lumileds LLCInventors: Erik Charles Nelson, Isaac Wildeson, Parijat Deb, Kenneth Vampola
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Publication number: 20190189436Abstract: Described herein are methods for using remote plasma chemical vapor deposition (RP-CVD) and sputtering deposition to grow layers for light emitting devices. A method includes growing a light emitting device structure on a growth substrate, and growing a tunnel junction on the light emitting device structure using at least one of RP-CVD and sputtering deposition. The tunnel junction includes a p++ layer in direct contact with a p-type region, where the p++ layer is grown by using at least one of RP-CVD and sputtering deposition. Another method for growing a device includes growing a p-type region over a growth substrate using at least one of RP-CVD and sputtering deposition, and growing further layers over the p-type region. Another method for growing a device includes growing a light emitting region and an n-type region using at least one of RP-CVD and sputtering deposition over a p-type region.Type: ApplicationFiled: February 13, 2019Publication date: June 20, 2019Applicant: Lumileds LLCInventors: Isaac Wildeson, Parijat Deb, Erik Charles Nelson, Junko Kobayashi
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Patent number: 10285236Abstract: An automotive headlight is disclosed including: an optical unit including a plurality of optical elements, each optical element having a different central direction; a segmented light-emitting diode (LED) chip including a plurality of LEDs that are separated by trenches formed on the segmented LED chip and arranged in a plurality of sections, each section being aligned with a different respective optical element, and each section including at least one first LED and at least one second LED; and a controller configured to: apply a forward bias to each of the first LEDs, apply a reverse bias to each of the second LEDs, and change a brightness of the first LEDs in any section based on a signal generated by the second LED in that section.Type: GrantFiled: April 9, 2018Date of Patent: May 7, 2019Assignee: Lumileds, LLCInventors: Erik Charles Nelson, Isaac Wildeson, Parijat Deb, Kenneth Vampola
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Patent number: 10236409Abstract: Described herein are methods for using remote plasma chemical vapor deposition (RP-CVD) and sputtering deposition to grow layers for light emitting devices. A method includes growing a light emitting device structure on a growth substrate, and growing a tunnel junction on the light emitting device structure using at least one of RP-CVD and sputtering deposition. The tunnel junction includes a p++ layer in direct contact with a p-type region, where the p++ layer is grown by using at least one of RP-CVD and sputtering deposition. Another method for growing a device includes growing a p-type region over a growth substrate using at least one of RP-CVD and sputtering deposition, and growing further layers over the p-type region. Another method for growing a device includes growing a light emitting region and an n-type region using at least one of RP-CVD and sputtering deposition over a p-type region.Type: GrantFiled: May 19, 2017Date of Patent: March 19, 2019Assignee: Lumileds LLCInventors: Isaac Wildeson, Parijat Deb, Erik Charles Nelson, Junko Kobayashi