Abstract: The present patent application concerns compounds of formula (I) with R1 and R2 taken together with the nitrogen atom to which they are attached, form a mono or bicyclic saturated nitrogen-containing ring; their preparation and their use as a H3 receptor ligand for treating e.g. CNS disorders like Alzheimer's disease.

Abstract: In the field of sensor fabrication, it is known to form a silicon-on-insulator starting structure from which fabrication of the sensor based. The present invention provides a method of forming a silicon-on-insulator structure comprising a substrate having an insulating layer patterned thereon. A silicon oxide layer is then deposited over the patterned insulating layer before silicon is grown over both an exposed surface of the substrate as well as the silicon oxide layer, mono-crystalline silicon forming on the exposed parts of the substrate and polysilicon forming on the silicon oxide layer. After depositing a capping layer over the structure, the wafer is heated, whereby the polysilicon re-crystallises to form mono-crystalline silicon, resulting in the insulating layer being buried beneath mono-crystalline silicon.

Abstract: The present patent application concerns new compounds of formula (I) with R1 and R2 taken together with the nitrogen atom to which they are attached, form a saturated nitrogen-containing ring, A is a saturated C1-4 alkylene and B a C3-4 alkylene or alkenylene chain; their preparation and their use as a H3 receptor ligand for treating e.g. CNS disorders like Alzheimer's disease.