Abstract: A display unit includes: a light-emitting section including a light-emitting element that has a first electrode, an organic layer including a light-emitting layer, and a second electrode in this order; and a reflector that is provided at a periphery of the light-emitting section to reflect light from the light-emitting section, and has a conductive layer, the conductive layer being electrically coupled to the second electrode of the light-emitting element.

Abstract: A display unit includes: a light-emitting section including a light-emitting element that has a first electrode, an organic layer including a light-emitting layer, and a second electrode in this order; and a reflector that is provided at a periphery of the light-emitting section to reflect light from the light-emitting section, and has a conductive layer, the conductive layer being electrically coupled to the second electrode of the light-emitting element.

Abstract: A display unit includes: a light-emitting section including a light-emitting element that has a first electrode, an organic layer including a light-emitting layer, and a second electrode in this order; and a reflector that is provided at a periphery of the light-emitting section to reflect light from the light-emitting section, and has a conductive layer, the conductive layer being electrically coupled to the second electrode of the light-emitting element.

Abstract: A display unit includes: a light-emitting section including a light-emitting element that has a first electrode, an organic layer including a light-emitting layer, and a second electrode in this order; and a reflector that is provided at a periphery of the light-emitting section to reflect light from the light-emitting section, and has a conductive layer, the conductive layer being electrically coupled to the second electrode of the light-emitting element.

Abstract: A substrate includes: a plurality of pixels arranged two-dimensionally on a common wiring substrate, and each including a plurality of types of light emitting elements that differ from one another in emission color; a plurality of light-scattering sections each provided for a corresponding one of the pixels, and each provided above the corresponding one of the pixels; and a light-shielding section provided in a gap between adjacent ones of the pixels, or provided in an opposing region that opposes the gap when viewed in a normal direction of the wiring substrate.

Abstract: A substrate includes: a plurality of pixels arranged two-dimensionally on a common wiring substrate, and each including a plurality of types of light emitting elements that differ from one another in emission color; a plurality of light-scattering sections each provided for a corresponding one of the pixels, and each provided above the corresponding one of the pixels; and a light-shielding section provided in a gap between adjacent ones of the pixels, or provided in an opposing region that opposes the gap when viewed in a normal direction of the wiring substrate.

Abstract: A phosphor, an optical device, and a display device are provided. The phosphor includes a composition represented by (Sr(1-x-y)CaxBay)(Ga(1-m-n)AlmInn)aS4:Eu, wherein the concentration of europium is in the range of 1 to 9 mole percent; 0?x?1, 0?y?1, and x+y?1; 0?m?1, 0?n?1, m+n?1, and 2.9?a?5.9; and a main absorption wavelength range of the excitation is selected either a first wavelength range that overlaps the entirety of a reference wavelength range and extends to the shorter wavelength side or a second wavelength range that overlaps the entirety of the reference wavelength range and extends to the longer wavelength side according to the value a.

Abstract: The invention provides a display device capable of improving color separation characteristics by using a color filter having high transmittance. An organic light emitting device emits blue light, red light, and green light, and the emission intensity of the green light is relatively lower than those of the blue light and the red light. A green fluorescence conversion layer for absorbing a blue wavelength component and emits green light is provided between the organic light emitting device and a green filter layer. Color purity of blue and red is improved by decreasing a green light emitting component causing decreasing color purity when blue and red are separated by a color filter, and by using the color filter having high transmittance and low density. The decreased green light emitting component is complemented with the green fluorescence conversion layer, chromaticity is adjusted by a green filter layer, and thereby light emitting efficiency and color reproducibility are improved.

Abstract: A display apparatus that includes: a plurality of light-emitting devices disposed on a substrate with an accumulation of, in this or inverse order, a light transmissive electrode layer, a functional layer including a light-emitting layer, and an opposing electrode layer; and a color conversion layer that is provided on a side of the light transmissive electrode layer for any of the light-emitting devices, and applies color conversion to an emitted light generated by the light-emitting layer for the light-emitting device. In the display apparatus, the light-emitting devices each have a reflective surface on a position where the light-emitting layer is sandwiched with the light transmissive electrode layer, and an optical distance between the reflective surface and the light-emitting layer varies by the light-emitting devices depending on provision of the color conversion layer.

Abstract: A method of manufacturing a semiconductor characterized in that, in polycrystallizing an amorphous silicon thin film formed on a substrate through an annealing process, the amorphous silicon thin film has a plane area of 1000 ?m2 or less. A thin-film transistor characterized by comprising an active silicon film which is formed of a plurality of island-like regions arranged in parallel to each other, each of the island-like regions being formed of a polycrystal silicon thin film having a plane area of 1000 ?m2 or less. A method of manufacturing a thin-film transistor comprising the steps of: forming an amorphous silicon thin film on a substrate; processing the amorphous silicon thin film into a plurality of island-like regions each having a plane area of 1000 ?m2 or less; polycrystallizing an amorphous silicon thin film that forms the island-like regions through an annealing process; and forming a thin-film transistor having at least one of the plurality of island-like regions as an active silicon layer.

Abstract: An active matrix circuit comprises a semiconductor layer, and a p-type impurity region provided in said semiconductor layer, and an interlayer insulating film comprising silicon nitride provided over said semiconductor layer.

Abstract: A display apparatus that includes: a plurality of light-emitting devices disposed on a substrate with an accumulation of, in this or inverse order, a light transmissive electrode layer, a functional layer including a light-emitting layer, and an opposing electrode layer; and a color conversion layer that is provided on a side of the light transmissive electrode layer for any of the light-emitting devices, and applies color conversion to an emitted light generated by the light-emitting layer for the light-emitting device. In the display apparatus, the light-emitting devices each have a reflective surface on a position where the light-emitting layer is sandwiched with the light transmissive electrode layer, and an optical distance between the reflective surface and the light-emitting layer varies by the light-emitting devices depending on provision of the color conversion layer.

Abstract: A phosphor, an optical device, and a display device are provided. The phosphor includes a composition represented by (Sr(1-x-y)CaxBay)(Ga(1-m-n)AlmInn)aS4:Eu, wherein the concentration of europium is in the range of 1 to 9 mole percent; 0?x?1, 0?y?1, and x+y?1; 0?m?1, 0?n?1, and m+n?1; and a main absorption wavelength range of the excitation is selected either a first wavelength range that overlaps the entirety of a reference wavelength range and extends to the shorter wavelength side or a second wavelength range that overlaps the entirety of the reference wavelength range and extends to the longer wavelength side according to value a.

Abstract: The invention provides a display device capable of improving color separation characteristics by using a color filter having high transmittance. An organic light emitting device emits blue light, red light, and green light, and the emission intensity of the green light is relatively lower than those of the blue light and the red light. A green fluorescence conversion layer for absorbing a blue wavelength component and emits green light is provided between the organic light emitting device and a green filter layer. Color purity of blue and red is improved by decreasing a green light emitting component causing decreasing color purity when blue and red are separated by a color filter, and by using the color filter having high transmittance and low density. The decreased green light emitting component is complemented with the green fluorescence conversion layer, chromaticity is adjusted by a green filter layer, and thereby light emitting efficiency and color reproducibility are improved.

Abstract: A method of manufacturing a semiconductor characterized in that, in polycrystallizing an amorphous silicon thin film formed on a substrate through an annealing process, the amorphous silicon thin film has a plane area of 1000 ?m2 or less. A thin-film transistor characterized by comprising an active silicon film which is formed, of a plurality of island-like regions arranged in parallel to each other, the island-like regions being formed of a polycrystal silicon thin film having a plane area of 1000 ?m2 or less. A method of manufacturing a thin-film transistor comprising the steps of: forming an amorphous silicon thin film on a substrate; processing the amorphous silicon thin film into a plurality of island-like regions having a plane area of 1000 ?m2 or less; polycrystallizing an amorphous silicon thin film that forms the island-like regions through an annealing process; and forming a thin-film transistor having at least one of the plurality of island-like regions as an active silicon layer.

Abstract: A method of manufacturing a semiconductor characterized in that, in polycrystallizing an amorphous silicon thin film formed on a substrate through an annealing process, the amorphous silicon thin film has a plane area of 1000 &mgr;m2 or less. A thin-film transistor characterized by comprising an active silicon film which is formed of a plurality of island-like regions arranged in parallel to each other, the island-like regions being formed of a polycrystal silicon thin film having a plane area of 1000 &mgr;m2 or less.

Abstract: In an organic EL device, a light emitting layer contains a specific coumarin derivative, and a hole injecting and/or transporting layer contains a specific tetraaryldiamine derivative. Also a light emitting layer in the form of a mix layer contains a specific coumarin derivative, a specific quinacridone compound or a specific styryl amine compound. There are provided at least two light emitting layers including a light emitting layer of the mix layer type wherein at least two dopants are contained so that at least two luminescent species may emit light. There is obtained an organic EL device capable of high luminance and continuous light emission and ensuring reliability. Multi-color light emission becomes possible.

Abstract: A method of manufacturing a semiconductor characterized in that, in polycrystallizing an amorphous silicon thin film formed on a substrate through an annealing process, the amorphous silicon thin film has a plane area of 1000 &mgr;m2 or less. A thin-film transistor characterized by comprising an active silicon film which is formed of a plurality of island-like regions arranged in parallel to each other, each of the island-like regions being formed of a polycrystal silicon thin film having a plane area of 1000 &mgr;m2 or less.

Abstract: In a thin film semiconductor device having a substrate (1), an active layer (3, 6, 9), a gate insulation layer (4), and a gate electrode (5), said active layer is produced through the steps of producing an amorphous silicon layer on said substrate through a CVD process by using a gas made up of poly silane SinH2(n+1), where n is an integer, and chloride gas, and effecting solid phase growth to produce said amorphous silicon layer. The addition of chlorine to the CVD gas used in producing the amorphous silicon layer makes it possible to produce the amorphous silicon layer at a lower temperature with a rapid growth rate. A thin film semiconductor device thus produced has the advantages of high mobility and low threshold voltage.

Abstract: To realize an organic EL device having an excellent hole injection efficiency, improved luminous efficiency, low operating voltage, and low cost, the invention provides an organic EL device comprising a hole injecting electrode, an electron injecting electrode, and at least one organic layer between the electrodes, at least one of the organic layer having a light emitting function. The device further has a high resistance inorganic hole injecting layer between the hole injecting electrode and the organic layer. The high resistance inorganic hole injecting layer is capable of blocking electrons and has conduction paths for carrying holes.