Abstract: A core material including a core and a solder plating layer of a (Sn—Bi)-based solder alloy made of Sn and Bi on a surface of the core. Bi in the solder plating layer is distributed in the solder plating layer at a concentration ratio in a predetermined range of, for example, 91.7% to 106.7%. Bi in the solder plating layer is homogeneous, and thus, a Bi concentration ratio is in a predetermined range over the entire solder plating layer including an inner circumference side and an outer circumference side in the solder plating layer.

Abstract: A hot-dip plating apparatus for plating a thin molten solder film can control a film thickness of a molten solder on a base material evenly and in increments of a few ?m and achieve a thin-film solder plating having a film thickness less than a conventional system. As shown in FIG. 1, this apparatus comprises a solder bath 17 of accommodating the molten solder 7; a second conveying section 23 for drawing up a strip member 31 from the solder bath; and a blower section 19 for blowing hot gas on the strip member 31 immediately after being drawn up from the solder bath by a second conveying section 23; the hot gas having a predetermined flow volume and a predetermined temperature equal to or higher than a melting temperature of the molten solder 7. According to this configuration, the excess molten solder 7 can be trimmed from the strip member 31 corresponding to composition of the molten solder 7.

Abstract: Provided herein is a solder material that includes a spherical core that provides space between a joint object and another object to be joined to the joint object and a solder coated layer that has a melting point at which a core layer of the core is not melted. The solder coated layer includes Sn as a main ingredient and 0 to 2 mass % of Ag, and coats the core. The solder coated layer has an average grain diameter of crystal grains of 3 ?m or less, and the solder material has a spherical diameter of 1 to 230 ?m and a sphericity of 0.95 or more.

Abstract: Provided is a solder material having oxidation resistance at the time of melting solder or after melting it, as well as managing a thickness of oxide film at a fixed value or less before melting the solder. A Cu core ball 1A is provided with a Cu ball 2A for keeping a space between a semiconductor package and a printed circuit board and a solder layer 3A that covers the Cu ball 2A. The solder layer 3A is composed of Sn or a solder alloy whose main component is Sn. For the Cu core ball 1A, lightness is equal to or more than 65 in the L*a*b* color space and yellowness is equal to or less than 7.0 in the L*a*b* color space, and more preferably, the lightness is equal to or more than 70 and the yellowness thereof is equal to or less than 5.1.

Abstract: Provided are a Ni ball, a Ni core ball, a solder joint, solder paste and foamed solder which are superior in the impact resistance to dropping and can inhibit any occurrence of a poor joints. An electronic component 60 is constructed by joining a solder bump 30 of a semiconductor chip 10 to an electrode 41 of a printed circuit board 40 with solder paste 12, 42. The solder bump 30 is formed by joining an electrode 11 of the semiconductor chip 10 to the Ni ball 20. The Ni ball 20 according to the present invention contains purity which is equal to or higher than 99.9% and equal to or lower than 99.995%, sphericity which is equal to or higher than 0.90, and Vickers hardness which is equal to or higher than 20HV and equal to or less than 90HV.

Abstract: Provided are a Cu column, a Cu core column, a solder joint, and a through-silicon via, which have the low Vickers hardness and the small arithmetic mean roughness. For the Cu column 1 according to the present invention, its purity is equal to or higher than 99.9% and equal to or lower than 99.995%, its arithmetic mean roughness is equal to or less than 0.3 ?m, and its Vickers hardness is equal to or higher than 20 HV and equal to or less than 60 HV. Since the Cu column 1 is not melted at a melting temperature in the soldering and a definite stand-off height (a space between the substrates) can be maintained, it is preferably applied to the three dimensional mounting or the pitch narrowing mounting.

Abstract: Provided is a solder material which enables a growth of an oxide film to be inhibited. A solder ball which is a solder material is composed of a solder layer and a covering layer covering the solder layer. The solder layer is spherical and is composed of a metal material containing an alloy including Sn content of 40% and more. Otherwise the solder layer is composed of a metal material including Sn content of 100%. In the covering layer, a SnO film is formed outside the solder layer, and a SnO2 film is formed outside the SnO film. A thickness of the covering layer is preferably more than 0 nm and equal to or less than 4.5 nm. Additionally, a yellow chromaticity of the solder ball is preferably equal to or less than 5.7.

Abstract: Provided are a Cu ball, a Cu core ball, a solder joint, solder paste and foamed solder, which are superior in the impact resistance to dropping and can inhibit any occurrence of poor joints a junction defect. An electronic component 60 is constructed by joining a solder bump 30 of a semiconductor chip 10 to an electrode 41 of a printed circuit board 40 with solder paste 12, 42. The solder bump 30 is formed by joining an electrode 11 of the semiconductor chip 10 to the Cu ball 20. The Cu ball 20 according to the present invention contains purity which is equal to or higher than 99.9% and equal to or lower than 99.995%, sphericity which is equal to or higher than 0.95, and Vickers hardness which is equal to or higher than 20 HV and equal to or less than 60 HV.

Abstract: A Cu core ball and a method of manufacturing such a Cu core ball. Purity of the Cu internal ball is at least 99.9% and not greater than 99.995%. A total contained amount of Pb and/or Bi in impurity contained in the Cu ball is equal to or larger than 1 ppm. Its sphericity is at least 0.95. A solder plating film coated on the Cu ball is of Sn solder or a lead free solder alloy whose primary component is Sn. In the solder plating film, a contained amount of U is not more than 5 ppb and that of Th is not more than 5 ppb. A total alpha dose of the Cu ball and the solder plating film is not more than 0./0200 cph/cm2. An arithmetic average roughness of the Cu core ball is equal to or less than 0.3 ?m.

Abstract: Produced is a metal ball which suppresses an emitted ? dose. Contained are the steps of melting a pure metal by heating the pure metal at a temperature which is higher than a boiling point of an impurity to be removed, higher than a melting point of the pure metal, and lower than a boiling point of the pure metal, the pure metal containing a U content of 5 ppb or less, a Th content of 5 ppb or less, purity of 99.9% or more and 99.995% or less, and a Pb or Bi content or a total content of Pb and Bi of 1 ppm or more, and the pure metal having the boiling point higher than the boiling point at atmospheric pressure of the impurity to be removed; and sphering the molten pure metal in a ball.

Abstract: A bump electrode is formed on an electrode pad using a Cu core ball in which a core material is covered with solder plating, and a board which has bump electrodes such as semiconductor chip or printed circuit board mounts such a bump electrode. Flux is coated on a substrate and the bump electrodes are then mounted on the electrode pad. In a step of heating the electrode pad and the Cu core ball to melt the solder plating, a heating rate of the substrate is set to have not less than 0.01° C./sec and less than 0.3.

Abstract: A Cu ball that has low ? dose and high sphericity even when containing at least a certain amount of impurity elements other than Cu. Even when the purity thereof is 99.995% or less and U and Th contents are 5 ppb or less in order to suppress any software errors and decrease connection failure, ? dose is 0.0200 cph/cm2 or less. Further, the sphericity of the Cu ball is unexpectedly improved by making the purity not more than 99.995%.

Abstract: Provided are a Ni ball, a Ni core ball, a solder joint, solder paste and foamed solder which are superior in the impact resistance to dropping and can inhibit any occurrence of a poor joints. An electronic component 60 is constructed by joining a solder bump 30 of a semiconductor chip 10 to an electrode 41 of a printed circuit board 40 with solder paste 12, 42. The solder bump 30 is formed by joining an electrode 11 of the semiconductor chip 10 to the Ni ball 20. The Ni ball 20 according to the present invention contains purity which is equal to or higher than 99.9% and equal to or lower than 99.995%, sphericity which is equal to or higher than 0.90, and Vickers hardness which is equal to or higher than 20 HV and equal to or less than 90 HV.

Abstract: Provided are a Cu core ball and a cu core column, which achieve dropping strength and strength against heat cycle. The Cu core ball (1) contains a Cu ball (2) made of Cu or a Cu alloy and a solder layer (3) which is made of a solder alloy composed of Sn and Cu and covers the Cu ball (2). The solder layer (3) contains not less than 0.1% through not more than 3.0% of Cu and the remainder is composed of Sn and impurities.

Abstract: Provided is a solder bump forming method that enables micro-solder bumps to be formed without the possibility of occurrence of a bridge due to excess molten solder. An injection head 11 for supplying molten solder has a nozzle 16 brought into contact with a mask with openings that is disposed over a substrate 8. After completing a supply operation, the injection head 11 is forcedly cooled by heat transfer from a cooling unit 13 through a heater unit 12 whose operation has been stopped. Molten solder 15 in the cooled injection head 11 does not drool from the nozzle 16 when the injection head 11 moves up.

Abstract: A solid vanadium rechargeable battery, including; a first vanadium compound containing vanadium, whose oxidation number changes between 2 and 3 due to oxidation and reduction reactions, or solid vanadium salt or complex salt including such vanadium, and a surface that becomes a negative electrode; a second vanadium compound containing vanadium, whose oxidation number changes between 5 and 4 due to reduction and oxidation reactions, or solid vanadium salt or complex salt including such vanadium, and a surface that becomes a positive electrode; and a separator sandwiched between the first and the second vanadium compounds for selectively allowing ions to pass through, is provided.

Abstract: A Cu core ball is provided that prevents any soft errors and decreases any connection failure. The Cu core ball includes a solder plating film formed on the surface of a Cu ball that is a Sn solder plating film or is made of a lead-free solder alloy, a principal ingredient of which is Sn. The solder plating film contains U of 5 ppb or less and Th of 5 ppb or less. The Cu ball has a purity of not less than 99.9% Cu and not more than 99.995% Cu. Pb and/or Bi contents therein are at a total of 1 ppm or more. The sphericity thereof is 0.95 or more. The obtained Cu core ball has an ? dose of 0.0200 cph/cm2 or less.

Abstract: A core ball wherein a junction melting temperature and a low alpha dose are set for suppressing a soft error generation and solving a mounting problem. A metallic powder as a core is a sphere. A pure degree of a Cu ball of the metallic powder is equal to or higher than 99.9% but equal to or less than 99.995%. A contained amount of one of Pb and Bi or a total contained amount of Pb and Bi is equal to or higher than 1 ppm. A sphericity of the Cu ball is at least 0.95. A solder plating film for coating the Cu ball comprises Sn—Bi based alloy. U contained in the solder plating film is equal to or less than 5 ppb and Th is equal to or less than 5 ppb. An alpha dose of the core ball is equal to or less than 0.0200 cph/cm2.

Abstract: Providing an Ag ball having a low alpha dose and a high sphericity regardless of impurity elements having an amount equal to or more than a predetermined value except for Ag. In order to suppress a soft error and reduce an connection fault, a content of U is equal to or less than 5 ppb, a content of Th is equal to or less than 5 ppb, a purity is equal to or more than 99.9% but equal to or less than 99.9995%, an alpha dose is equal to or less than 0.0200 cph/cm2, a content of either Pb or Bi or a total content of both Pb and Bi is equal to or more than 1 ppm, and a sphericity is equal to or more than 0.90.

Abstract: Providing a core ball wherein a junction melting temperature and a low alpha dose are set for suppressing a soft error generation and solving a mounting problem. A metallic powder as a core is a sphere. A pure degree of a Cu ball of the metallic powder is equal to or higher than 99.9% but equal to or less than 99.995%. A contained amount of one of Pb and Bi or a total contained amount of Pb and Bi is equal to or higher than 1 ppm. A sphericity of the Cu ball is equal to or higher than 0.95. A solder plating film for coating the Cu ball comprises Sn—Bi based alloy. U contained in the solder plating film is equal to or less than 5 ppb and Th is equal to or less than 5 ppb. An alpha dose of the core ball is equal to or less than 0.0200 cph/cm2.