Abstract: A heat assisted magnetic recording head is provided, which can prevent an effect of a heat in a laser diode when a magnetic recording region is heated by a heating laser beam and which can reduce its size and weight. In the heat assisted magnetic recording head, a recording magnetic pole, a magnetic recording element, a magnetic read element, an optical waveguide, and an irradiating optical waveguide are attached to a floating slider provided below a suspension. The laser diode is arranged on an opposite side of the suspension to the floating slider. The heating laser beam emitted from the laser diode is directed to the irradiating optical waveguide through the optical waveguide, so that a magnetic recording medium is irradiated with the heating laser beam exiting from the irradiating optical waveguide.

Abstract: A magnetoresistance effect element is composed of a first ferromagnetic layer, a second ferromagnetic layer, and at least one nano-contact portion formed between the first and second ferromagnetic layers, which are formed on the same plane on a substrate. The nano-contact portion has a maximum dimension of not more than Fermi length of a material constituting the nano-contact portion. A permanent magnet layer or in-stack bias layer may be further formed on the first and/or second ferromagnetic layer.

Abstract: A magnetoresistive read head includes a spin valve having at least one free layer spaced apart from at least one pinned layer by a spacer. The free layer includes a cobalt compound as a thin film including at least one of Co—X, CoFe—X and CoNi—X, where X is an element from the lanthanoid family (a 4-f element). The content of Co is higher than 80 percent, and the content of the lanthanoid element is less than 10 percent. The film may comprise the entire free layer, or be positioned adjacent to one or more conventional free layer films. The pinned layer is a conventional single layer, or a synthetic multi-layered structure having a spacer between sub-layers. Because the spin valve structure has a high exchange stiffness and damping factor, spin transfer effect is reduced and a high-speed dynamic response is provided.

Abstract: A method of generating a thin film for use in a spin valve of a magnetoresistive (MR) sensor having a nano-constricted spacer is provided. The bottom portion of the spin valve is deposited up to the pinned layer, a deposition chamber is provided, and the spacer layer is sputtered thereon. A main ion beam generates ions onto a composite surface including magnetic chips and insulator material. Simultaneously, an assisted ion beam provides ions directly to the substrate, thus improving the softness of the free layer and smoothness of the spacer layer. Neutralizers are also provided to prevent ion repulsion and improve ion beam focus. As a result, a thin film spacer can be formed, and the nano-constricted MR spin valve having low free layer coercivity and low interlayer coupling between the free layer and pinned layer is formed.

Abstract: A compact oscillator in which the oscillation frequency can be adjusted to a desired value is provided. The oscillator includes: a magnetoresistive effect element comprising a pinned layer, a nonmagnetic spacer layer, and a free layer of which magnetization direction is changeable that are stacked in that order, a magnetization direction of the pinned layer being substantially fixed along a direction perpendicular to a stack direction; a bias magnetic field application unit for applying a bias magnetic field to the free layer in a direction that is perpendicular to the stack direction and is different from the magnetization direction of the pinned layer; and an adjusting magnetic field application unit for applying an adjusting magnetic field to the free layer in a direction that is perpendicular to the stack direction and is different from the direction of the bias magnetic field.

Abstract: A magnetoresistance effect element has a lamination structure comprising a free layer including two ferromagnetic layers, a pinned layer including two ferromagnetic layers, and at least one nano-contact portion composed of a single ferromagnetic layer and disposed at least one portion between the free layer and the pinned layer. A distance between the free layer and the pinned layer, i.e., thickness of the nano-contact portion in the lamination direction, is not more than Fermi length, preferably less than 100 nm.

Abstract: Provided is a thin-film magnetic head capable of writing data with high accuracy on a magnetic recording medium having high coercive force without heating. The head comprises an electromagnetic coil element comprising: a main magnetic pole; an auxiliary magnetic pole; and a write coil formed so as to pass through at least between the main magnetic pole and the auxiliary magnetic pole, for generating the write magnetic field. In this head, a part of the write coil has a layered structure of: a resonance coil layer for generating a resonance magnetic field having ferromagnetic resonance frequency of a magnetic recording layer of a magnetic recording medium or having a frequency in the vicinity thereof; and a write coil layer. And further, the resonance coil layer and the write coil layer sandwich an insulating layer therebetween.

Abstract: A magnetic head apparatus is provided which is capable of recording data in a recoding layer having high coercive force with high accuracy without heating. A magnetic recording and reproducing apparatus is also provided which has the magnetic head apparatus. A recording head has: a main magnetic pole; a recording-side front-end shield (a return magnetic pole); a recording-side rear-end shield (a return magnetic pole); a main coil for generating a perpendicular recording magnetic field at the main magnetic pole; and an auxiliary coil for generating a longitudinal alternating current magnetic field having a frequency in the microwave band at the main magnetic pole.

Abstract: A magnetoresistance effect element has a lamination structure comprising a free layer including two ferromagnetic layers, a pinned layer including two ferromagnetic layers, and at least one nano-contact portion composed of a single ferromagnetic layer and disposed at least one portion between the free layer and the pinned layer. A distance between the free layer and the pinned layer, i.e., thickness of the nano-contact portion in the lamination direction, is not more than Fermi length, preferably less than 100 nm.

Abstract: A magnetoresistance effect element is manufactured in the steps in which a first ferromagnetic layer is formed on a substrate, the first ferromagnetic layer is patterned to form a pinned layer, in shape of strip, having both end portions to which electrode pads are formed, the pinned layer is etched, for example, through ion milling, so as to form at least one nano-contact portion, an insulating layer is formed by embedding an insulating material into the etched pinned layer around the nano-contact portion, a second ferromagnetic layer is formed so as to contact at least the nano-contact portion, and this second ferromagnetic layer is patterned to form a free layer, in shape of strip, having both end portions to which electrode pads are formed.

Abstract: A compact oscillator in which the oscillation frequency can be adjusted to a desired value is provided. The oscillator includes: a magnetoresistive effect element comprising a pinned layer, a nonmagnetic spacer layer, and a free layer of which magnetization direction is changeable that are stacked in that order, a magnetization direction of the pinned layer being substantially fixed along a direction perpendicular to a stack direction; a bias magnetic field application unit for applying a bias magnetic field to the free layer in a direction that is perpendicular to the stack direction and is different from the magnetization direction of the pinned layer; and an adjusting magnetic field application unit for applying an adjusting magnetic field to the free layer in a direction that is perpendicular to the stack direction and is different from the direction of the bias magnetic field.

Abstract: A magnetic head is provided, which includes a magnetoresistive effect element having a pinned layer and a free layer and can sufficiently suppress noise induced by spin transfer even for high current density. The magnetic head includes the magnetoresistive effect element which comprises: a first pinned layer; a first spacer layer made of an insulating material; a free layer having a magnetization direction changeable in accordance with an external magnetic field; a second spacer layer that is conductive; and a second pinned layer, wherein those layers are stacked in that order. A magnetization direction of the first pinned layer is substantially fixed in a direction perpendicular to a stacked direction, and a magnetization direction of the second pinned layer is fixed to be opposite to the magnetization direction of the first pinned layer.

Abstract: A magnetoresistive head including a magnetoresistive element, and two shield layers sandwiching the magnetoresistive element. The magnetoresistive element includes an antiferromagnetic layer a pinned layer in exchange coupling with the antiferromagnetic layer, a free layer whose magnetization rotates or switches according to a media magnetic field, and an intermediate layer between the free layer and the pinned layer. The intermediate layer includes magnetic grains surrounded by an insulator. The magnetic grains connect the free layer and the pinned layer by means of a nano contact. The free layer is oversized with respect to the pinned layer and the intermediate layer which are distanced from a media side end of the shield layers.

Abstract: A magnetoresistance effect element has a lamination structure comprising a free layer including two ferromagnetic layers, a pinned layer including two ferromagnetic layers, and at least one nano-contact portion composed of a single ferromagnetic layer and disposed at least one portion between the free layer and the pinned layer. A distance between the free layer and the pinned layer, i.e., thickness of the nano-contact portion in the lamination direction, is not more than Fermi length, preferably less than 100 nm.

Abstract: A magnetoresistive read head includes a spin valve having a multi-layer in-stack bias and side shields to substantially reduce the undesired flux from adjacent bits and tracks, as well as from the transverse field of the recording medium itself. At least one free layer is spaced apart from at least one pinned layer by a spacer. Above the free layer, a capping layer is provided, followed by the in-stack bias, which includes a non-magnetic conductive layer, a ferromagnetic layer having a magnetization fixed by an anti-ferromagnetic layer, and a stabilizing ferromagnetic layer. Additionally, a multilayered side shield is provided, including a thin insulator, a soft buffer layer and a soft side shield layer. As a result, the free layer is shielded from the undesired flux, and recording media having substantially smaller track size and bit size.

Abstract: A magnetoresistance effect element is manufactured in the steps in which a first ferromagnetic layer is formed on a substrate, the first ferromagnetic layer is patterned to form a pinned layer, in the shape of a strip, having both end portions to which electrode pads are formed, the pinned layer is etched, for example, through ion milling, so as to form at least one nano-contact portion, an insulating layer is formed by embedding an insulating material into the etched pinned layer around the nano-contact portion, a second ferromagnetic layer is formed so as to contact at least the nano-contact portion, and this second ferromagnetic layer is patterned to form a free layer, in shape of strip, having both end portions to which electrode pads are formed.

Abstract: A magnetoresistanee effect element comprises a free layer composed of a ferromagnetic layer, a pinned layer composed of a ferromagnetic layer, and a layer disposed between the free layer and the pinned layer and including at least one nano-contact portion disposed between the free layer and the pinned layer. The nano-contact portion has a dimension, including at least one of a length in the layer lamination direction and a length in a direction normal to the layer lamination direction, being not more than Fermi length. The nano-contact portion is provided, in an inside portion thereof, with a magnetic wall composed of either one of Bloch magnetic wall, Neel magnetic wall or a combination wall thereof.

Abstract: [Problem to be Solved] When a multiplicity of columns are to be connected to a ceramic substrate of a ceramic column grid array, a mounting jig is placed over the ceramic substrate, and the columns are inserted into holes of the mounting jig. If the columns are inserted into the holes of the mounting jig one by one, productivity is degraded, and the production cost increases. The present invention is a column suction-holding head capable of inserting columns into all the holes of the mounting jig collectively at once. [Solution Means] The body of the column suction-holding head has elongate holes at the same positions as those of electrodes installed on a ceramic substrate of a ceramic column grid array, and suction holes are provided at the bottoms of the elongate holes. The column suction-holding head is superimposed on an alignment jig having columns aligned therein, and suction is applied from the suction holes.

Abstract: A reader of a magnetoresistive head includes a spin valve with sensor having a stabilizing hard bias and side shield at the side of the sensor, to substantially reduce the undesired flux from adjacent bits and tracks. At least one free layer is spaced apart from at least one pinned layer by a spacer. Above the free layer, a capping layer is provided. The stabilizer may include an insulator, a soft material that is a shielding layer, a decoupling layer, and a hard bias. As a result, the free layer is shielded from the undesired flux of adjacent tracks, and recording media having substantially smaller track size and bit size can be used.

Abstract: A magnetoresistance effect has a lamination structure comprising a free layer including at least two ferromagnetic layers, a pinned layer including two ferromagnetic layers; and at least one nano-contact portion composed of a single ferromagnetic layer and disposed between the free layer and the pinned layer. A distance between the free layer and the pinned layer, i.e., thickness of the nano-contact portion in the lamination direction, is not more than Fermi length, preferably less than 100 nm.