Abstract: A photovoltaic device is provided with: an i-type amorphous layer formed over a region of at least a part of a back surface of a semiconductor substrate; and an i-type amorphous layer formed over a region of at least a part of a light-receiving surface of the semiconductor substrate. No electrode is provided on the light-receiving surface, and an electrode is provided on the back surface. An electrical resistance per unit area of the i-type amorphous layer is lower than an electrical resistance per unit area of the i-type amorphous layer.

Abstract: A solar cell having improved carrier collection efficiency is provided. A solar cell (1) is provided with a semiconductor substrate (10) having one type of conductivity, a first semiconductor layer (12n), a second semiconductor layer (13p), a first electrode (14), and a second electrode (15). The first semiconductor layer (12n) is arranged on one main surface (10b) of the semiconductor substrate (10). The first semiconductor layer (12n) has the one type of conductivity. The second semiconductor layer (13p) is arranged on the one main surface (10b) of the semiconductor substrate (10). The second semiconductor layer (13p) has the other type of conductivity. The first electrode (14) is connected electrically to the first semiconductor layer (12n). The second electrode (15) is connected electrically to the second semiconductor layer (13p). The thickness of the second semiconductor layer (13p) is thinner than the thickness of the first semiconductor layer (12n).

Abstract: There is provided a photovoltaic device (100) having a substrate (10), i-type amorphous layers (16i, 18i) formed over a region of at least a part of a back surface of the substrate, and an i-type amorphous layer (12i) formed over a region of at least a part of a light-receiving surface of the substrate (10); and characterized in that electrodes (24n, 24p) are provided on the back surface and no electrode is provided on the light-receiving surface, and an electrical resistance per unit area of the back surface side i-type amorphous layers is lower than an electrical resistance per unit area of the light-receiving surface side i-type amorphous layer.

Abstract: Polyhedral silsesquioxane anions are economically prepared by reaction of a silica source derived from combusted organic material with a quaternary ammonium hydroxide compound. Reaction of the resulting anions with chlorosilanes may be effected in near stoichiometric fashion in organic solvent containing reactive quantities of organic acids such as formic acid. The functional groups on the resulting functionalized silsesquioxanes may be substituted for other functional groups by reaction with di- or polysiloxanes in the presence of a synthetic ion exchange resin.

Abstract: In a steering device 10, the upper side portion of a rubber boot 120 is fixedly fitted on a case outer cylindrical component 41 of a cable case 39, and the lower side portion of the rubber boot 120 is fixed to a dashboard 100 of a vehicle body 14 over the entire circumference thereof. Thus, the case outer cylindrical component 41 can be secured against rotation more firmly compared with a prior art steering device wherein such a case outer cylindrical component is fixed at two portions thereon by means of a wire of a V-letter shape. Further, the problem attendant on the wire of the V-letter shape in the prior art steering device no longer arises even in the car models wherein the case outer cylindrical component 41 and the dashboard 100 are relatively far from each other. That is, it can be realized to secure the case outer cylindrical component 41 of the cable case 39 against rotation relative to the vehicle body 14 even in any car model.

Abstract: A display capable of inhibiting a transistor from an instable operation resulting from fluctuation of the potential of a shielding film and suppressing occurrence of a malfunction is provided. This display comprises a first region including a first transistor, a first shielding film provided on the first region, arranged on a region corresponding to the first transistor and supplied with a first potential, a second region including a second transistor and a second shielding film provided on the second region, arranged on a region corresponding to the second transistor and supplied with a second potential.

Abstract: A second planarization insulating layer disposed under an organic EL layer is heat-treated so as to bring the moisture content thereof to an extremely low level. By lowering this moisture content to 77 ng/cm3 or below, an organic EL panel can be realized where the degradation of luminescence characteristics is minimized. As an alternative method of reducing the adverse effect of moisture content on the organic EL layer, a reforming processing or coating processing may be performed on the second planarization insulating layer.

Abstract: A display capable of inhibiting a transistor from an instable operation resulting from fluctuation of the potential of a shielding film and suppressing occurrence of a malfunction is provided. This display comprises a first region including a first transistor, a first shielding film provided on the first region, arranged on a region corresponding to the first transistor and supplied with a first potential, a second region including a second transistor and a second shielding film provided on the second region, arranged on a region corresponding to the second transistor and supplied with a second potential.

Abstract: A transfer ratio varying apparatus includes: a steering shaft configured to transmit a steering angle, an actuator connected to the steering shaft and a damper disposed between the input shaft and the steering shaft and configured to absorb vibration caused by the actuator. The actuator includes: a housing, an input shaft configured to integrally rotate with the housing and connected to the steering shaft, a motor including a rotatable shaft, an output shaft configured to transmit an angle to a wheel assembly, and a gear mechanism between the rotatable shaft and the output shaft at the housing, configured to adjust a rotational angle of the rotatable shaft and to output the adjusted rotational angle to the output shaft.

Abstract: In a steering device 10, the upper side portion of a rubber boot 120 is fixedly fitted on a case outer cylindrical component 41 of a cable case 39, and the lower side portion of the rubber boot 120 is fixed to a dashboard 100 of a vehicle body 14 over the entire circumference thereof. Thus, the case outer cylindrical component 41 can be secured against rotation more firmly compared with a prior art steering device wherein such a case outer cylindrical component is fixed at two portions thereon by means of a wire of a V-letter shape. Further, the problem attendant on the wire of the V-letter shape in the prior art steering device no longer arises even in the car models wherein the case outer cylindrical component 41 and the dashboard 100 are relatively far from each other. That is, it can be realized to secure the case outer cylindrical component 41 of the cable case 39 against rotation relative to the vehicle body 14 even in any car model.

Abstract: Provided is a semiconductor device capable of improving the characteristics of a plurality of semiconductor elements formed on a substrate while uniformizing the characteristics. This semiconductor device comprises a substrate and a plurality of semiconductor elements, formed on the substrate, each including a semiconductor layer having a channel region with carriers flowing in a first direction. The semiconductor layer constituting each of the plurality of semiconductor elements has a twin plane, and the twin plane is formed to extend in such a second direction that the carriers flowing through the channel region hardly traverse the twin plane.

Abstract: Polyhedral silsesquioxane anions are economically prepared by reaction of a silica source derived from combusted organic material with a quaternary ammonium hydroxide compound. Reaction of the resulting anions with chlorosilanes may be effected in near stoichiometric fashion in organic solvent containing reactive quantities of organic acids such as formic acid. The functional groups on the resulting functionalized silsesquioxanes may be substituted for other functional groups by reaction with di- or polysiloxanes in the presence of a synthetic ion exchange resin.

Abstract: A display unit capable of inhibiting moisture and gas from penetrating into a liquid crystal layer and an alignment layer also after formation of a display electrode and suppressing decomposition of a material forming the display electrode is obtained. In this display unit, an impurity-introduced layer containing an impurity element having high electronegativity is formed on the surface of an insulator film and the surface of the display electrode after formation of the display electrode. Thus, the insulator film and the display electrode are improved in effects of preventing transmission of moisture and gas also after formation of the display electrode. The impurity-introduced layer formed on the surface of the display electrode stabilizes the surface of an ITO film forming the display electrode, thereby suppressing decomposition of the ITO film.

Abstract: A method of fabricating a semiconductor device capable of obtaining a high-density laser beam necessary for crystallizing a semiconductor layer or activating an impurity while miniaturizing a lens group provided on the outlet of an optical fiber member is provided. This method of fabricating a semiconductor device comprises steps of connecting a laser oscillator oscillating a near infrared laser beam and an irradiation optical system with each other through an optical fiber member having a single core part and heating a semiconductor layer by irradiating the near infrared laser beam from the irradiation optical system.

Abstract: A deposition mask capable of relaxing nonuniformity of the thickness of a deposit formed on a substrate and reducing the width of a non-opening part of a mask layer by reducing the thickness of the mask layer is obtained. This deposition mask comprises a mask layer formed by a single silicon thin film and a mask pattern, formed on the mask layer, including a mask opening having an opening width increased toward a deposition source. The mask layer formed by a silicon thin film can be reduced in thickness due to small deflection caused by its own weight. Thus, the width of the non-opening part of the mask layer can be reduced, whereby the width of a part formed with no deposit can be reduced.

Abstract: A contact hole is formed, by etching that uses buffered hydrofluoric acid, in a gate insulating film made of SiO2 and an interlayer insulating layer, formed on the gate insulating film, which is made of SiN. In this contact hole, there is formed an electrode which includes: a first protective metal layer made of a refractory metal; a wiring layer, formed on the first protective metal layer, which is made of a metal whose resistance is lower than that of the refractory metal; and a second protective metal layer, made of a refractory metal, which is formed thicker than the gate insulating film.

Abstract: A transfer ratio varying apparatus includes: a steering shaft configured to transmit a steering angle, an actuator connected to the steering shaft and a damper disposed between the input shaft and the steering shaft and configured to absorb vibration caused by the actuator. The actuator includes: a housing, an input shaft configured to integrally rotate with the housing and connected to the steering shaft, a motor including a rotatable shaft, an output shaft configured to transmit an angle to a wheel assembly, and a gear mechanism between the rotatable shaft and the output shaft at the housing, configured to adjust a rotational angle of the rotatable shaft and to output the adjusted rotational angle to the output shaft.

Abstract: A contact hole is formed, by etching that uses buffered hydrofluoric acid, in a gate insulating film made of SiO2 and an interlayer insulating layer, formed on the gate insulating film, which is made of SiN. In this contact hole, there is formed an electrode which includes: a first protective metal layer made of a refractory metal; a wiring layer, formed on the first protective metal layer, which is made of a metal whose resistance is lower than that of the refractory metal; and a second protective metal layer, made of a refractory metal, which is formed thicker than the gate insulating film.

Abstract: A method of fabricating a semiconductor device capable of inhibiting a silicon layer from agglomerating in a molten state without patterning the silicon layer is provided. This method of fabricating a semiconductor device comprises steps of forming a silicon layer to be in contact with at least either the upper surface or the lower surface of a first film having a contact angle of not more than about 45° with respect to molten silicon and crystallizing the silicon layer after melting the silicon layer by heating the silicon layer with a continuously oscillated electromagnetic wave.

Abstract: A method of fabricating a semiconductor device capable of obtaining a high-density laser beam necessary for crystallizing a semiconductor layer or activating an impurity while miniaturizing a lens group provided on the outlet of an optical fiber member is provided. This method of fabricating a semiconductor device comprises steps of connecting a laser oscillator oscillating a near infrared laser beam and an irradiation optical system with each other through an optical fiber member having a single core part and heating a semiconductor layer by irradiating the near infrared laser beam from the irradiation optical system.