Abstract: A metal mixture is prepared, in which an excess amount of Te is added to a (Bi—Sb)2Te3 based composition. After melting the metal mixture, the molten metal is solidified on a surface of a cooling roll of which the circumferential velocity is no higher than 5 m/sec, so as to have a thickness of no less than 30 ?m. Thus, a plate shaped raw thermoelectric semiconductor materials 10 are manufactured, in which Te rich phases are microscopically dispersed in complex compound semiconductor phases, and extending directions of C face of most of crystal grains are uniformly oriented. The raw thermoelectric semiconductor materials 10 are layered in the direction of the plate thickness. And the layered body is solidified and formed to form a compact 12. After that, the compact 12 is plastically deformed in such a manner that a shear force is applied in a uniaxial direction that is approximately parallel to the main layering direction of the raw thermoelectric semiconductor materials 10.

Abstract: A metal mixture is prepared, in which an excess amount of Te is added to a (Bi—Sb)2Te3 based composition. After melting the metal mixture, the molten metal is solidified on a surface of a cooling roll of which the circumferential velocity is no higher than 5 m/sec, so as to have a thickness of no less than 30 ?m. Thus, a plate shaped raw thermoelectric semiconductor materials 10 are manufactured, in which Te rich phases are microscopically dispersed in complex compound semiconductor phases, and extending directions of C face of most of crystal grains are uniformly oriented. The raw thermoelectric semiconductor materials 10 are layered in the direction of the plate thickness. And the layered body is solidified and formed to form a compact 12. After that, the compact 12 is plastically deformed in such a manner that a shear force is applied in a uniaxial direction that is approximately parallel to the main layering direction of the raw thermoelectric semiconductor materials 10.

Abstract: A metal mixture is prepared, in which an excess amount of Te is added to a (Bi—Sb)2Te3 based composition. After melting the metal mixture, the molten metal is solidified on a surface of a cooling roll of which the circumferential velocity is no higher than 5 m/sec, so as to have a thickness of no less than 30 ?m. Thus, a plate shaped raw thermoelectric semiconductor materials 10 are manufactured, in which Te rich phases are microscopically dispersed in complex compound semiconductor phases, and extending directions of C face of most of crystal grains are uniformly oriented. The raw thermoelectric semiconductor materials 10 are layered in the direction of the plate thickness. And the layered body is solidified and formed to form a compact 12. After that, the compact 12 is plastically deformed in such a manner that a shear force is applied in a uniaxial direction that is approximately parallel to the main layering direction of the raw thermoelectric semiconductor materials 10.

Abstract: A metal mixture is prepared, in which an excess amount of Te is added to a (Bi—Sb)2Te3 based composition. After melting the metal mixture, the molten metal is solidified on a surface of a cooling roll of which the circumferential velocity is no higher than 5 m/sec, so as to have a thickness of no less than 30 ?m. Thus, a plate shaped raw thermoelectric semiconductor materials 10 are manufactured, in which Te rich phases are microscopically dispersed in complex compound semiconductor phases, and extending directions of C face of most of crystal grains are uniformly oriented. The raw thermoelectric semiconductor materials 10 are layered in the direction of the plate thickness. And the layered body is solidified and formed to form a compact 12. After that, the compact 12 is plastically deformed in such a manner that a shear force is applied in a uniaxial direction that is approximately parallel to the main layering direction of the raw thermoelectric semiconductor materials 10.

Abstract: A metal mixture is prepared, in which an excess amount of Te is added to a (Bi—Sb)2Te3 based composition. After melting the metal mixture, the molten metal is solidified on a surface of a cooling roll of which the circumferential velocity is no higher than 5 m/sec, so as to have a thickness of no less than 30 ?m. Thus, a plate shaped raw thermoelectric semiconductor materials 10 are manufactured, in which Te rich phases are microscopically dispersed in complex compound semiconductor phases, and extending directions of C face of most of crystal grains are uniformly oriented. The raw thermoelectric semiconductor materials 10 are layered in the direction of the plate thickness. And the layered body is solidified and formed to form a compact 12. After that, the compact 12 is plastically deformed in such a manner that a shear force is applied in a uniaxial direction that is approximately parallel to the main layering direction of the raw thermoelectric semiconductor materials 10.

Abstract: A pigment containing particles surface treated with N-acylglycine hydroxyaluminum and/or N-acyl-N-methylglycine hydroxyaluminum, and a pigment dispersion which contains such surface treated particles and a cosmetically acceptable oily material, having excellent dispersion stability and versatility (ease of dispersion and wide range of usage), because the particles are easily and uniformly dispersed in a short period of time at a high concentration in such a cosmetically acceptable oily material, thus a cosmetic product is thereby stable as an emulsion and has better usage than existing products.

Abstract: There is provided a pigment surface treated with N-acylglycine hydroxyaluminum and/or N-acyl-N-methylglycine hydroxyaluminum, and a pigment dispersion which contains such surface treated pigment and a cosmetically acceptable oily material, and has an excellent dispersion stability and versatility (ease of dispersion and wide rage of usage).

Abstract: A material 1 to be shaped is reduced and formed by bringing dies with convex forming surfaces, when viewed from the side of the transfer line of the material 1, close to the transfer line from above and below the material 1, in synchronism with each other, while giving the dies a swinging motion in such a manner that the portions of the forming surfaces of the dies, in contact with the material 1, are transferred from the upstream to the downstream side in the direction of the transfer line.

Abstract: A material 1 to be shaped is reduced and formed by bringing dies with convex forming surfaces, when viewed from the side of the transfer line of the material 1, close to the transfer line from above and below the material 1, in synchronism with each other, while giving the dies a swinging motion in such a manner that the portions of the forming surfaces of the dies, in contact with the material 1, are transferred from the upstream to the downstream side in the direction of the transfer line.

Abstract: When a failure is occurred in the Internet or a connection between a computer system and an Internet provider, a reconnection is performed automatically, and data are resent. Hence, a restoring operation can be made easily. Further, even when long data are re-transferred, a reliability can be ensured. When a receiving computer and the Internet provider are disconnected and reconnected, a sending computer receives an old IP address and a new IP address of the receiving computer, and compares the received old IP address and an old IP address stored in a connection information storage. When the IP addresses are matched, the data are re-transferred to the receiving computer by using the received new IP address.

Abstract: A material 1 to be shaped is reduced and formed by bringing dies with convex forming surfaces, when viewed from the side of the transfer line of the material 1, close to the transfer line from above and below the material 1, in synchronism with each other, while giving the dies a swinging motion in such a manner that the portions of the forming surfaces of the dies, in contact with the material 1, are transferred from the upstream to the downstream side in the direction of the transfer line.

Abstract: A material 1 to be shaped is reduced and formed by bringing dies with convex forming surfaces, when viewed from the side of the transfer line of the material 1, close to the transfer line from above and below the material 1, in synchronism with each other, while giving the dies a swinging motion in such a manner that the portions of the forming surfaces of the dies, in contact with the material 1, are transferred from the upstream to the downstream side in the direction of the transfer line.

Abstract: An emulsion slurry for cosmetic products, which comprises particles of pigments d/or extender pigments having a lipophilic moiety attached to the surface thereof and cosmetically acceptable oil component or oily material or combination of both dispersed in a liquid suspending medium comprising a mixture of water and oil.

Abstract: A composition for cosmetic products and a method for making the cosmetic products, the composition comprises particles of pigments and/or extender pigments, water-soluble metal salt, and one or more hydrophobidizing agents selected from hydrogenated lecithin, and water-soluble alkali salt of fatty acids, acylamino acids, and acyl collagen with the water-soluble metal salt and the one or more hydrophobidizing agents being prevented from chemically interacting with one another in the presence of ambient moisture prior to placement of the composition into an aqueous slurry by encapsulation or by entrapment of one of such materials.

Abstract: An aqueous slurry for cosmetic products, which comprises particles of pigments and/or extender pigments having a lipophilic moiety attached to the surface thereof and a cosmetically acceptable oily material dispersed in a liquid suspending medium consisting essentially of water.

Abstract: Castable refractory for a slide gate plate is mainly formed of alumina raw material and amorphous carbon raw material of 2 to 15 wt %, and contains silicon carbide and/or boron carbide, the total content thereof being equal to 0.5 to 10 wt % (the content of boron carbide is equal to or less than 3 wt %, and when the content of boron carbide is less than 0.5 wt %, silicon carbide is set to 3 wt % or more), 2 to 10 wt % magnesia of 1 mm or less in particle size, 0.2 to 3 wt % silica fine powder of 5 micrometers or less in particle size, and 0.1 to 5 wt % salt of condensate of formalin and aromatic sulfonate.

Abstract: A pigment or extender pigment treated with a linear reactive alkylpolysiloxane having in the molecule amino groups, imino groups, halogen atoms, hydroxyl groups, or alkoxyl groups, which is oriented and adsorbed to the surface of the pigment or extender pigment by heat treatment; a process for producing the treated pigment; and a cosmetic made with the treated pigment. The alkylpolysiloxane has a degree of polymerization from 25 to 100 and a Mw/Mn ratio from 1.0 to 1.3. The organosilicon-treated pigment, characterized by silicone firmly adsorbed to its surface, freedom from residual hydrogen, very smooth feel, good adhesion to the skin, and ability to permit color pigment of fine particle size to spread well, is particularly suitable for use in cosmetics such as powder foundation, liquid foundation, rouge, and eye shadow.

Abstract: Disclosed herein are (1) an organosilicon-treated pigment which comprises a pigment or extender pigment and a linear reactive alkylpolysiloxane having in the molecule amino groups, imino groups, halogen atoms, hydroxyl groups, or alkoxyl groups, which is adhered in an oriented mode to the surface of the pigment or extender pigment by heat treatment, (2) a process for producing said treated pigment, and (3) a cosmetic made with said treated pigment. The organosilicon-treated pigment is characterized by silicone firmly adhered to the surface of a pigment or extender pigment, freedom from residual hydrogen, very smooth feel, good adhesion to the skin, and ability to permit the color pigment of fine particle size to spread well. The treated pigment finds use as a component of high-quality cosmetics such as powder foundation, liquid foundation, rouge, and eye shadow.

Abstract: A high efficiency RF power amplifier includes a field effect transistor having a grounded source, a gate receiving an input signal, and a drain. A first inductor has a first end coupled to the drain via a lead inductance, and a second end through which an amplified output signal is output. A first capacitor has a first end grounded and a second end coupled to the second end of the first inductor. A second inductor has a first end receiving a drain bias voltage and a second end coupled to the second end of the first inductor. The second inductor is formed of a distributed-constant element. The first capacitor and the second inductor form a parallel resonant circuit coupled to the drain at a fundamental operating frequency of the high efficiency RF power amplifier, so that the drain is set to a high-impedance state.

Abstract: A pigment (or body) composed of particles having surfaces covered with a high molecular substance containing a group of the formula --COOR, where R stands for a hydrogen or metal atom, and having an acid value of at least 200 when the R in the formula stands for a hydrogen atom. It has a high power of absorbing and holding moisture. The surfaces of the pigment particles are alternatively covered with both such a high molecular substance and a substance which makes the surfaces hydrophobic. This pigment has a good affinity for oil and yet a high power of absorbing and holding moisture. A cosmetic containing any such pigment has a high moisturizing power and provides a long makeup life.