Abstract: A method for classification includes receiving an image of an area of a semiconductor wafer on which a pattern has been formed, the area containing an image location of interest, and receiving computer-aided design (CAD) data relating to the pattern comprising a CAD location of interest corresponding to the image location of interest. At least one value for one or more attributes of the image location of interest is computed based on a context of the CAD location of interest with respect to the CAD data.

Abstract: A Critical Dimensions Scanning Electron Microscope (CD-SEM) is described that comprises a unit for performing CD-SEM measurements of a semiconductor wafer, a BSE imaging unit for obtaining a Grey Level image (GL) of the wafer, and a unit for GL analysis and for processing the GL analysis results with reference to results of the CD-measurements.

Abstract: A method for determining overlay between layers of a multilayer structure may include obtaining a given image representing the multilayer structure, obtaining expected images for layers of the multilayer structure, providing a combined expected image of the multilayer structure as a combination of the expected images of said layers, performing registration of the given image against the combined expected image, and providing segmentation of the given image, thereby producing a segmented image, and maps of the layers of said multilayered structure. The method may further include determining overlay between any two selected layers of the multilayer structure by processing the maps of the two selected layers together with the expected images of said two selected layers.

Abstract: A method for image processing includes providing a microscopic image of a structure fabricated on a substrate and computer-aided design (CAD) data used in fabricating the structure. The microscopic image is processed by a computer so as to generate a first directionality map, which includes, for a matrix of points in the microscopic image, respective directionality vectors corresponding to magnitudes and directions of edges at the points irrespective of a sign of the magnitudes. The CAD data are processed by the computer so as to produce a simulated image based on the CAD data and to generate a second directionality map based on the simulated image. The first and second directionality maps are compared by the computer so as to register the microscopic image with the CAD data.

Abstract: A Critical Dimensions Scanning Electron Microscope (CD-SEM) is described that comprises a unit for performing CD-SEM measurements of a semiconductor wafer, a BSE imaging unit for obtaining a Grey Level image (GL) of the wafer, and a unit for GL analysis and for processing the GL analysis results with reference to results of the CD-measurements.

Abstract: A technique for visualizing elements in images by applying a color coding procedure to data which comprises an initial image and segmentation results based on N labels. The segmentation results comprise information on segmentation uncertainty. The color coding procedure constructs a resulting colored image based on the initial image and N pre-selected base colors, and in such a manner that colors in the resulting colored image are modified by using intensity of the initial image and the information on segmentation uncertainty.

Abstract: A technique for visualizing elements in images by applying a color coding procedure to data which comprises an initial image and segmentation results based on N labels. The segmentation results comprise information on segmentation uncertainty. The color coding procedure constructs a resulting colored image based on the initial image and N pre-selected base colors, and in such a manner that colors in the resulting colored image are modified by using intensity of the initial image and the information on segmentation uncertainty.

Abstract: A method for classification includes receiving an image of an area of a semiconductor wafer on which a pattern has been formed, the area containing a location of interest. At least one value for one or more attributes of the location of interest are computed based upon topographical features of the location of interest in a three-dimensional (3D) map of the area.

Abstract: A method for determining overlay between layers of a multilayer structure may include obtaining a given image representing the multilayer structure, obtaining expected images for layers of the multilayer structure, providing a combined expected image of the multilayer structure as a combination of the expected images of said layers, performing registration of the given image against the combined expected image, and providing segmentation of the given image, thereby producing a segmented image, and maps of the layers of said multilayered structure. The method may further include determining overlay between any two selected layers of the multilayer structure by processing the maps of the two selected layers together with the expected images of said two selected layers.

Abstract: A system that may include a processor, wherein the processor comprise an image waveform finder, a synthetic image generator and an output image generator; wherein the processor is configured to (i) receive or generate multiple images of a region of the object; wherein the region has an electron yield that is below an electron yield threshold; wherein each image is generated by scanning the region with an electron beam; (ii) process the multiple images to generate multiple synthetic images, and (iii) generate an output image of the region in response to the multiple synthetic images; wherein the image waveform finder is configured to process each image of the multiple images to find at least one image waveform that has a peak intensity that exceeds an intensity threshold; wherein the synthetic image generator is configured to replace one or more of the at least one image waveforms by one or more corresponding synthetic waveforms to provide a synthetic image; and wherein the output image generator is configured

Abstract: A method for determining overlay between layers of a multilayer structure may include obtaining a given image representing the multilayer structure, obtaining expected images for layers of the multilayer structure, providing a combined expected image of the multilayer structure as a combination of the expected images of said layers, performing registration of the given image against the combined expected image, and providing segmentation of the given image, thereby producing a segmented image, and maps of the layers of said multilayered structure. The method may further include determining overlay between any two selected layers of the multilayer structure by processing the maps of the two selected layers together with the expected images of said two selected layers.

Abstract: A system for scanning an object, the system may include (a) charged particles optics that is configured to: scan, with a charged particle beam and at a first scan rate, a first region of interest (ROI) of an area of the object; detect first particles that were generated as a result of the scanning of the first ROI; scan, with the charged particle beam and at a second scan rate, a second ROI of the area of the object; wherein the second scan rate is lower than the first scan rate; wherein first ROI differs from the second ROI by at least one parameter; detect second particles that were generated as a result of the scanning of the second ROA; and (b) a processor that is configured to generate at least one image of the area in response to the first and second particles.

Abstract: A system for scanning an object, the system may include (a) charged particles optics that is configured to: scan, with a charged particle beam and at a first scan rate, a first region of interest (ROI) of an area of the object; detect first particles that were generated as a result of the scanning of the first ROI; scan, with the charged particle beam and at a second scan rate, a second ROI of the area of the object; wherein the second scan rate is lower than the first scan rate; wherein first ROI differs from the second ROI by at least one parameter; detect second particles that were generated as a result of the scanning of the second ROA; and (b) a processor that is configured to generate at least one image of the area in response to the first and second particles.

Abstract: A method includes irradiating a surface of a sample, which is made-up of multiple types of materials, with a beam of primary electrons. Emitted electrons emitted from the irradiated sample are detected using multiple detectors that are positioned at respective different positions relative to the sample, so as to produce respective detector outputs. Calibration factors are computed to compensate for variations in emitted electron yield among the types of the materials, by identifying, for each material type, one or more horizontal regions on the surface that are made-up of the material type, and computing a calibration factor for the material type based on at least one of the detector outputs at the identified horizontal regions. The calibration factors are applied to the detector outputs. A three-dimensional topographical model of the surface is calculated based on the detector outputs to which the calibration factors are applied.

Abstract: A method for image processing includes providing a microscopic image of a structure fabricated on a substrate and computer-aided design (CAD) data used in fabricating the structure. The microscopic image is processed by a computer so as to generate a first directionality map, which includes, for a matrix of points in the microscopic image, respective directionality vectors corresponding to magnitudes and directions of edges at the points irrespective of a sign of the magnitudes. The CAD data are processed by the computer so as to produce a simulated image based on the CAD data and to generate a second directionality map based on the simulated image. The first and second directionality maps are compared by the computer so as to register the microscopic image with the CAD data.

Abstract: A method includes irradiating a surface of a sample, which is made-up of multiple types of materials, with a beam of primary electrons. Emitted electrons emitted from the irradiated sample are detected using multiple detectors that are positioned at respective different positions relative to the sample, so as to produce respective detector outputs. Calibration factors are computed to compensate for variations in emitted electron yield among the types of the materials, by identifying, for each material type, one or more horizontal regions on the surface that are made-up of the material type, and computing a calibration factor for the material type based on at least one of the detector outputs at the identified horizontal regions. The calibration factors are applied to the detector outputs. A three-dimensional topographical model of the surface is calculated based on the detector outputs to which the calibration factors are applied.

Abstract: A method includes irradiating a surface of a sample, which is made-up of multiple types of materials, with a beam of primary electrons. Emitted electrons emitted from the irradiated sample are detected using multiple detectors that are positioned at respective different positions relative to the sample, so as to produce respective detector outputs. Calibration factors are computed to compensate for variations in emitted electron yield among the types of the materials, by identifying, for each material type, one or more horizontal regions on the surface that are made-up of the material type, and computing a calibration factor for the material type based on at least one of the detector outputs at the identified horizontal regions. The calibration factors are applied to the detector outputs. A three-dimensional topographical model of the surface is calculated based on the detector outputs to which the calibration factors are applied.

Abstract: A method includes irradiating a surface of a sample, which is made-up of multiple types of materials, with a beam of primary electrons. Emitted electrons emitted from the irradiated sample are detected using multiple detectors that are positioned at respective different positions relative to the sample, so as to produce respective detector outputs. Calibration factors are computed to compensate for variations in emitted electron yield among the types of the materials, by identifying, for each material type, one or more horizontal regions on the surface that are made-up of the material type, and computing a calibration factor for the material type based on at least one of the detector outputs at the identified horizontal regions. The calibration factors are applied to the detector outputs. A three-dimensional topographical model of the surface is calculated based on the detector outputs to which the calibration factors are applied.

Abstract: A method includes irradiating a surface of a sample, which is made-up of multiple types of materials, with a beam of primary electrons. Emitted electrons emitted from the irradiated sample are detected using multiple detectors that are positioned at respective different positions relative to the sample, so as to produce respective detector outputs. Calibration factors are computed to compensate for variations in emitted electron yield among the types of the materials, by identifying, for each material type, one or more horizontal regions on the surface that are made-up of the material type, and computing a calibration factor for the material type based on at least one of the detector outputs at the identified horizontal regions. The calibration factors are applied to the detector outputs. A three-dimensional topographical model of the surface is calculated based on the detector outputs to which the calibration factors are applied.

Abstract: A method for classification includes receiving an image of an area of a semiconductor wafer on which a pattern has been formed, the area containing a location of interest. At least one value for one or more attributes of the location of interest are computed based upon topographical features of the location of interest in a three-dimensional (3D) map of the area.