Abstract: A device for electrodepositing a conductive material from a first solution into at least one feature formed on a wafer includes a hollow body, an electrode, and a moving mechanism. The hollow body includes a first opening and a second opening. The first solution is supplied to the second opening and injected from the first opening. The electrode is disposed within the hollow body. A potential difference is applicable between the first electrode and the surface of the wafer to electrodeposit the conductive material into the at least one feature. The moving mechanism is mechanically coupled to the hollow body. The moving mechanism is configured to position the first opening of the hollow body over the at least one feature.

Abstract: A method of filling a conductive material in a three dimensional integration feature formed on a surface of a wafer is disclosed. The feature is optionally lined with dielectric and/or adhesion/barrier layers and then filled with a liquid mixture containing conductive precursor, such as a solution with dissolved ruthenium precursor or a dispersion or suspension with conductive particles (e.g., gold, silver, copper), and the substrate is rotated while the mixture is on its surface. Then, the liquid carrier is dried from the feature, leaving a conductive layer in the feature. These two steps are optionally repeated until the feature is filled up with the conductor. Then, the conductor is annealed in the feature, thereby forming a dense conductive plug in the feature.

Abstract: An electrochemical apparatus is provided which deposits material onto or removes material from the surface of a workpiece. The apparatus comprises a polishing pad and a platen which is in turn comprised of a first conductive layer in contact with the polishing pad and coupled to a first potential, a second conductive layer coupled to a second potential, and a first insulating layer disposed between the first and second conductive layers. At least one electrical contact is positioned within the polishing pad and is electrically coupled to the second conductive layer. A reservoir is provided which places an electrolyte solution in contact with the polishing pad and the workpiece. A carrier positions and/or presses the workpiece against the polishing pad.

Abstract: A method of conditioning an electropolished conductive layer of a substrate is disclosed, the conductive layer having impurities thereon. The conductive layer may be formed on a thin conductive film or barrier layer that coats one or more cavities formed on the substrate surface. The method comprises applying a first process solution onto the electropolished conductive layer to dissolve a portion thereof, and then applying a second process solution onto the conductive layer. The second process solution is preferably configured to charge and move the impurities away from the conductive layer. The substrate surface can then be rinsed to remove the first and second process solutions and the impurities.

Abstract: An apparatus for performing an electrochemical process on a surface of a workpiece comprises a platen assembly comprising a support platen, an electrolyte distribution plate, and a first conductive layer intermediate the support platen and distribution plate and configured to be coupled to at least a first potential. A carrier is configured to carry the workpiece and position the workpiece proximate the electrolyte distribution plate. A reservoir delivers an electrolyte to the electrolyte distribution plate. At least one contact separate from the platen assembly engages a peripheral region of the workpiece for coupling the workpiece to a second potential.

Abstract: A system and method for electropolishing a conductive surface of a wafer using an electrolyte comprising an electrically resistive agent that modulates the conductivity of the electrolyte. The electrically resistive agent is a urea or a urea derivative. The electrolyte may also include a chelating agent a pH adjusting agent, and/or a surface film forming agent. The system includes a wafer carrier configured to hold the wafer, a polishing pad, and an electrode in proximity to the polishing pad. The wafer carrier may be configured to rotate or laterally move the wafer on the polishing surface of the polishing pad.

Abstract: A method for polishing a metal layer on a workpiece is provided wherein relative motion is produced between the metal layer and a polishing surface and wherein the metal layer has a polish resistant film thereon. The metal layer is first pre-treated to substantially remove the polish resistant film. Next, the metal layer is polished at low pressure between the metal layer and the polishing surface in the presence of a polishing solution. The pretreating may be accomplished by, for example, sputtering, polishing the polish-resistant film in the presence of abrasive polishing solution, polishing the polish-resistant film at higher pressures between the film and the polishing surface, maintaining the temperature of the pretreating step to be substantially between 10 degrees Centigrade and 30 degrees Centigrade, and chemically removing the film.

Abstract: A multi-process workpiece apparatus is disclosed. The multi-process workpiece apparatus includes an electrochemical deposition apparatus which has a wafer contacting surface having at least one electrical conductor disposed therein. The multi-process workpiece apparatus also includes a planarization apparatus and at least one workpiece handling robot configured to transport a workpiece from the electrochemical deposition apparatus to the planarization apparatus.

Abstract: An electrochemical planarization apparatus for planarizing a metallized surface on a workpiece includes a polishing pad and a platen. The platen is formed of conductive material, is disposed proximate to the polishing pad and is configured to have a negative charge during at least a portion of a planarization process. At least one electrical conductor is positioned within the platen. The electrical conductor has a first end connected to a power source. A workpiece carrier is configured to carry a workpiece and press the workpiece against the polishing pad. The power source applies a positive charge to the workpiece via the electrical conductor so that an electric potential difference between the metallized surface of the workpiece and the platen is created to remove at least a portion of the metallized surface from the workpiece.

Abstract: Methods are provided for forming semiconductor packages utilizing a device-ready wafer having a through-wafer via interconnect. One exemplary method comprises etching a via extending from a first surface of the device-ready wafer and terminating within the wafer. The first surface of the device-ready wafer is contacted with a wafer contact surface while relative motion between the device-ready wafer and the wafer contact surface is effected. An electrochemical deposition composition comprising a conductive material is supplied to the first surface of the wafer and an electric potential difference is applied between the first surface of the wafer and an anode. Conductive material is deposited within the via and a portion of the wafer is removed from a second surface of the wafer to expose the conductive material within the via.

Abstract: An electrochemical planarization apparatus for planarizing a metallized surface on a workpiece includes a polishing pad and a platen. The platen is formed of conductive material, is disposed proximate to the polishing pad and is configured to have a negative charge during at least a portion of a planarization process. At least one electrical conductor is positioned within the platen. The electrical conductor has a first end connected to a power source. A workpiece carrier is configured to carry a workpiece and press the workpiece against the polishing pad. The power source applies a positive charge to the workpiece via the electrical conductor so that an electric potential difference between the metallized surface of the workpiece and the platen is created to remove at least a portion of the metallized surface from the workpiece.

Abstract: A polishing fluid for a chemical-mechanical polishing process, an apparatus including the polishing fluid, and methods for making and using the polishing fluid, the fluid including a surfactant having an aliphatic structure, a buffer for maintaining the polishing fluid at a pH ranging between about 5 and about 14, and a chelating agent.

Abstract: A process for removing a metallized surface from a workpiece is provided. A kinetic removal mechanism for removal of the metallized surface is characterized by a formation step for formation of a removable surface film and an abrasive step for removal of the film. The process includes causing the workpiece to contact a polishing surface while effecting relative motion between the workpiece and the polishing surface. The process also includes causing a polishing solution having less than 1 wt % of a polishing abrasive to be distributed at a contact area between the workpiece and the polishing surface so that the abrasive step is a rate-determining step of the removal mechanism.

Abstract: An electrochemical apparatus is provided which deposits material onto or removes material from the surface of a workpiece. The apparatus comprises a polishing pad and a platen which is in turn comprised of a first conductive layer in contact with the polishing pad and coupled to a first potential, a second conductive layer coupled to a second potential, and a first insulating layer disposed between the first and second conductive layers. At least one electrical contact is positioned within the polishing pad and is electrically coupled to the second conductive layer. A reservoir is provided which places an electrolyte solution in contact with the polishing pad and the workpiece. A carrier positions and/or presses the workpiece against the polishing pad.

Abstract: The invention relates generally to a system and method for improved cleaning of workpieces and workpiece cleaning tools. More specifically, the invention provides systems and methods for cleaning workpieces and sponges by manipulating the surface charge of one or more sponges by exposing them to various cleaning fluids. In one embodiment, sponges such as PVA sponges, having either positive, negative or neutral charges, are used to clean surfaces of workpieces such as semiconductor wafers. While cleaning a workpiece, a sponge may be exposed to a workpiece cleaning fluid, which may or may not alter the surface charge of the sponge. After cleaning the workpiece, the sponge may be exposed to a sponge cleaning fluid, which may or may not alter the surface charge of the sponge.

Abstract: An electrochemical apparatus is provided which deposits material onto or removes material from the surface of a workpiece. The apparatus comprises a polishing pad and a platen which is in turn comprised of a first conductive layer in contact with the polishing pad and coupled to a first potential, a second conductive layer coupled to a second potential, and a first insulating layer disposed between the first and second conductive layers. At least one electrical contact is positioned within the polishing pad and is electrically coupled to the second conductive layer. A reservoir is provided which places an electrolyte solution in contact with the polishing pad and the workpiece. A carrier positions and/or presses the workpiece against the polishing pad.

Abstract: An electrochemical planarization apparatus for planarizing a metallized surface on a workpiece includes a polishing pad and a platen. The platen is formed of conductive material, is disposed proximate to the polishing pad and is configured to have a negative charge during at least a portion of a planarization process. At least one electrical conductor is positioned within the platen. The electrical conductor has a first end connected to a power source. A workpiece carrier is configured to carry a workpiece and press the workpiece against the polishing pad. The power source applies a positive charge to the workpiece via the electrical conductor so that an electric potential difference between the metallized surface of the workpiece and the platen is created to remove at least a portion of the metallized surface from the workpiece.

Abstract: An apparatus for performing an electrochemical process on a surface of a workpiece comprises a platen assembly comprising a support platen, an electrolyte distribution plate, and a first conductive layer intermediate the support platen and distribution plate and configured to be coupled to at least a first potential. A carrier is configured to carry the workpiece and position the workpiece proximate the electrolyte distribution plate. A reservoir delivers an electrolyte to the electrolyte distribution plate. At least one contact separate from the platen assembly engages a peripheral region of the workpiece for coupling the workpiece to a second potential.

Abstract: An electrochemical planarization apparatus for planarizing a metallized surface on a workpiece includes a polishing pad and a platen. The platen is formed of conductive material, is disposed proximate to the polishing pad and is configured to have a negative charge during at least a portion of a planarization process. At least one electrical conductor is positioned within the platen. The electrical conductor has a first end connected to a power source. A workpiece carrier is configured to carry a workpiece and press the workpiece against the polishing pad. The power source applies a positive charge to the workpiece via the electrical conductor so that an electric potential difference between the metallized surface of the workpiece and the platen is created to remove at least a portion of the metallized surface from the workpiece.

Abstract: A method for polishing a metal layer (e.g. copper) on a workpiece is provided wherein relative motion is produced between the metal layer and a polishing surface and wherein the metal layer has a polish resistant film thereon. The metal layer is first pre-treated to substantially remove the polish resistant film. Next, the metal layer is polished at low pressure between the metal layer and the polishing surface in the presence of a polishing solution. The pretreating may be accomplished by, for example, sputtering, polishing the polish-resistant film in the presence of abrasive polishing solution, polishing the polish-resistant film at higher pressures between the film and the polishing surface and/or maintaining the temperature of the pretreating step to be substantially between 10 degrees Centigrade and 30 degrees Centigrade.