Patents by Inventor Itaru Oshiyama

Itaru Oshiyama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220123053
    Abstract: A solid-state imaging apparatus includes a pixel array part in which a plurality of pixels are two-dimensionally arranged, in which each pixel has a first photoelectric conversion region formed above a semiconductor layer, a second photoelectric conversion region formed in the semiconductor layer, a first filter configured to transmit a light in a predetermined wavelength region corresponding to a color component, and a second filter having different transmission characteristics from the first filter, one photoelectric conversion region out of the first photoelectric conversion region and the second photoelectric conversion region photoelectrically converts a light in a visible light region, the other photoelectric conversion region photoelectrically converts a light in an infrared region, the first filter is formed above the first photoelectric conversion region, and the second filter has transmission characteristics of making wavelengths of lights in an infrared region absorbed in the other photoelectric co
    Type: Application
    Filed: December 29, 2021
    Publication date: April 21, 2022
    Applicant: SONY GROUP CORPORATION
    Inventors: Tetsuji YAMAGUCHI, Atsushi TODA, Itaru OSHIYAMA
  • Patent number: 11310444
    Abstract: Provided is a solid-state image pickup element that includes a pixel, a light-receiving-surface-sided trench, and a light-receiving-surface-sided shielding member. A plurality of protrusions is formed on the light-receiving surface of the pixel in the solid-state image pickup element. In addition, the light-receiving-surface-sided trench is formed around the pixel having the plurality of protrusions formed, at the light-receiving surface in the solid-state image pickup element. In addition, the light-receiving-surface-sided member is buried in the light-receiving-surface-sided trench formed around the pixel having the plurality of protrusions formed on the light-receiving surface in the solid-state image pickup element. In addition, the photoelectric conversion region of a near-infrared-light pixel expands to the surface side opposed to the light-receiving surface of the photoelectric conversion region of a visible-light pixel.
    Type: Grant
    Filed: June 11, 2020
    Date of Patent: April 19, 2022
    Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Harumi Tanaka, Itaru Oshiyama, Sozo Yokogawa
  • Patent number: 11233092
    Abstract: A solid-state imaging apparatus includes a pixel array part in which a plurality of pixels are two-dimensionally arranged, in which each pixel has a first photoelectric conversion region formed above a semiconductor layer, a second photoelectric conversion region formed in the semiconductor layer, a first filter configured to transmit a light in a predetermined wavelength region corresponding to a color component, and a second filter having different transmission characteristics from the first filter, one photoelectric conversion region out of the first photoelectric conversion region and the second photoelectric conversion region photoelectrically converts a light in a visible light region, the other photoelectric conversion region photoelectrically converts a light in an infrared region, the first filter is formed above the first photoelectric conversion region, and the second filter has transmission characteristics of making wavelengths of lights in an infrared region absorbed in the other photoelectric co
    Type: Grant
    Filed: October 13, 2020
    Date of Patent: January 25, 2022
    Assignee: SONY CORPORATION
    Inventors: Tetsuji Yamaguchi, Atsushi Toda, Itaru Oshiyama
  • Publication number: 20210384250
    Abstract: Groove portions are provided between adjacent photoelectric conversion portions, and sidewall surfaces and bottom surfaces of the groove portions are covered with a first fixed charge film, and open ends of the groove portions are closed by a second fixed charge film with voids inside of the groove portions.
    Type: Application
    Filed: August 20, 2019
    Publication date: December 9, 2021
    Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Itaru OSHIYAMA, Shinichiro NOUDO, Yasufumi MIYOSHI
  • Publication number: 20210358987
    Abstract: The present technology relates to a solid state imaging sensor that is possible to suppress the reflection of incident light with a wide wavelength band. A reflectance adjusting layer is provided on the substrate in an incident direction of the incident light with respect to the substrate such as Si and configured to adjust reflection of the incident light on the substrate. The reflectance adjusting layer includes a first layer formed on the substrate and a second layer formed on the first layer. The first layer includes a concavo-convex structure provided on the substrate and a material which is filled into a concave portion of the concavo-convex structure and has a refractive index lower than that of the substrate, and the second layer includes a material having a refractive index lower than that of the first layer. It is possible to reduce the reflection on the substrate such as Si by using the principle of the interference of the thin film. Such a technology can be applied to solid state imaging sensors.
    Type: Application
    Filed: July 28, 2021
    Publication date: November 18, 2021
    Applicant: SONY GROUP CORPORATION
    Inventors: ITARU OSHIYAMA, HIROSHI TANAKA
  • Publication number: 20210335860
    Abstract: The present technology relates to an image pickup device and an electronic apparatus that are configured to enhance characteristics. A solid-state image pickup device includes a photoelectric conversion section that is arranged on a semiconductor substrate and configured to photoelectrically convert an incident light, a moth-eye section that includes recesses and projections formed on a surface on a light incident side in the semiconductor substrate and has, when a cross section approximately parallel to a direction toward the photoelectric conversion section from the light incident side is viewed, a recessed portion protruding toward the side of the photoelectric conversion section, the recessed portion having a curvature or a polygonal shape, and a region that is arranged adjacent to and opposite to the photoelectric conversion section of the moth-eye section and has a refractive index different from a refractive index of the semiconductor substrate.
    Type: Application
    Filed: July 7, 2021
    Publication date: October 28, 2021
    Applicant: SONY GROUP CORPORATION
    Inventors: Satoe MIYATA, Itaru OSHIYAMA
  • Patent number: 11159751
    Abstract: Provided is a solid-state image pickup element that includes a pixel, a light-receiving-surface-sided trench, and a light-receiving-surface-sided shielding member. A plurality of protrusions is formed on the light-receiving surface of the pixel in the solid-state image pickup element. In addition, the light-receiving-surface-sided trench is formed around the pixel having the plurality of protrusions formed, at the light-receiving surface in the solid-state image pickup element. In addition, the light-receiving-surface-sided member is buried in the light-receiving-surface-sided trench formed around the pixel having the plurality of protrusions formed on the light-receiving surface in the solid-state image pickup element. In addition, the photoelectric conversion region of a near-infrared-light pixel expands to the surface side opposed to the light-receiving surface of the photoelectric conversion region of a visible-light pixel.
    Type: Grant
    Filed: December 31, 2018
    Date of Patent: October 26, 2021
    Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Harumi Tanaka, Itaru Oshiyama, Sozo Yokogawa
  • Publication number: 20210288192
    Abstract: The present disclosure relates to a sensor element and an electronic device that enable sensor sensitivity to be improved. An optical-to-electrical conversion element that receives light in a predetermined wavelength range and performs optical-to-electrical conversion is formed in a semiconductor layer. A reflection suppressing part that suppresses reflection of the light is provided on a light receiving surface serving as a side on which the light enters the semiconductor layer. A transmission suppressing part that suppresses transmission through the semiconductor layer of the light that has been made incident from the light receiving surface is provided on a circuit surface serving as a side that is opposite to the light receiving surface of the semiconductor layer. The present technology can be applied, for example, to a reverse-surface irradiation type CMOS image sensor.
    Type: Application
    Filed: June 28, 2019
    Publication date: September 16, 2021
    Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Sozo YOKOGAWA, Itaru OSHIYAMA, Mikinori ITO
  • Patent number: 11121161
    Abstract: The present technology relates to a solid state imaging sensor that is possible to suppress the reflection of incident light with a wide wavelength band. A reflectance adjusting layer is provided on the substrate in an incident direction of the incident light with respect to the substrate such as Si and configured to adjust reflection of the incident light on the substrate. The reflectance adjusting layer includes a first layer formed on the substrate and a second layer formed on the first layer. The first layer includes a concavo-convex structure provided on the substrate and a material which is filled into a concave portion of the concavo-convex structure and has a refractive index lower than that of the substrate, and the second layer includes a material having a refractive index lower than that of the first layer. It is possible to reduce the reflection on the substrate such as Si by using the principle of the interference of the thin film. Such a technology can be applied to solid state imaging sensors.
    Type: Grant
    Filed: March 7, 2019
    Date of Patent: September 14, 2021
    Assignee: SONY CORPORATION
    Inventors: Itaru Oshiyama, Hiroshi Tanaka
  • Patent number: 11101305
    Abstract: The present technology relates to an imaging element and an electronic device capable of improving sensitivity to infrared light in a back side irradiation imaging element. An imaging element is provided with a semiconductor substrate on which a photoelectric converting unit is formed, a wiring layer arranged on a side opposite to a light receiving surface of the semiconductor substrate, and provided with a wire and a reflective film, and an insulating film stacked between the semiconductor substrate and the wiring layer, in which the reflective film is arranged between the insulating film and the wire and overlaps with at least a part of the photoelectric converting unit of each pixel in a first direction in which the semiconductor substrate and the wiring layer are stacked, and a first interlayer film between the insulating film and the reflective film is thicker than the insulating film. The present technology is applicable to a back side irradiation CMOS image sensor, for example.
    Type: Grant
    Filed: October 13, 2017
    Date of Patent: August 24, 2021
    Assignee: Sony Semiconductor Solutions Corporation
    Inventors: Sozo Yokogawa, Mikinori Ito, Itaru Oshiyama
  • Patent number: 11094728
    Abstract: The present technology relates to an image pickup device and an electronic apparatus that are configured to enhance characteristics. A solid-state image pickup device includes a photoelectric conversion section that is arranged on a semiconductor substrate and configured to photoelectrically convert an incident light, a moth-eye section that includes recesses and projections formed on a surface on a light incident side in the semiconductor substrate and has, when a cross section approximately parallel to a direction toward the photoelectric conversion section from the light incident side is viewed, a recessed portion protruding toward the side of the photoelectric conversion section, the recessed portion having a curvature or a polygonal shape, and a region that is arranged adjacent to and opposite to the photoelectric conversion section of the moth-eye section and has a refractive index different from a refractive index of the semiconductor substrate.
    Type: Grant
    Filed: April 22, 2019
    Date of Patent: August 17, 2021
    Assignee: SONY CORPORATION
    Inventors: Satoe Miyata, Itaru Oshiyama
  • Publication number: 20210082982
    Abstract: The present technology relates to a solid-state imaging device and an electronic apparatus capable of improving sensitivity while suppressing deterioration of color mixing. The solid-state imaging device includes: a substrate; a first photoelectric conversion region that is provided in the substrate; a second photoelectric conversion region that is provided in the substrate; a trench that is provided between the first photoelectric conversion region and the second photoelectric conversion region and penetrates through the substrate; a first concave portion region that has a plurality of concave portions provided on a light receiving surface side of the substrate, above the first photoelectric conversion region; and a second concave portion region that has a plurality of concave portions provided on the light receiving surface side of the substrate, above the second photoelectric conversion region.
    Type: Application
    Filed: December 28, 2018
    Publication date: March 18, 2021
    Inventor: ITARU OSHIYAMA
  • Publication number: 20210043687
    Abstract: A solid-state imaging apparatus includes a pixel array part in which a plurality of pixels are two-dimensionally arranged, in which each pixel has a first photoelectric conversion region formed above a semiconductor layer, a second photoelectric conversion region formed in the semiconductor layer, a first filter configured to transmit a light in a predetermined wavelength region corresponding to a color component, and a second filter having different transmission characteristics from the first filter, one photoelectric conversion region out of the first photoelectric conversion region and the second photoelectric conversion region photoelectrically converts a light in a visible light region, the other photoelectric conversion region photoelectrically converts a light in an infrared region, the first filter is formed above the first photoelectric conversion region, and the second filter has transmission characteristics of making wavelengths of lights in an infrared region absorbed in the other photoelectric co
    Type: Application
    Filed: October 13, 2020
    Publication date: February 11, 2021
    Applicant: SONY CORPORATION
    Inventors: Tetsuji YAMAGUCHI, Atsushi TODA, Itaru OSHIYAMA
  • Patent number: 10847581
    Abstract: A solid-state imaging apparatus includes a pixel array part having a plurality of pixels are two-dimensionally arranged, in which each pixel has a first photoelectric conversion region formed above a semiconductor layer, a second photoelectric conversion region formed in the semiconductor layer, a first filter configured to transmit a light in a predetermined wavelength region corresponding to a color component, and a second filter having different transmission characteristics from the first filter, one photoelectric conversion region out of the first photoelectric conversion region and the second photoelectric conversion region photoelectrically converts a light in a visible light region, the other photoelectric conversion region photoelectrically converts a light in an infrared region, the first filter is formed above the first photoelectric conversion region, and the second filter has transmission characteristics of making wavelengths of light in an infrared region absorbed in the other photoelectric conve
    Type: Grant
    Filed: May 2, 2017
    Date of Patent: November 24, 2020
    Assignee: Sony Corporation
    Inventors: Tetsuji Yamaguchi, Atsushi Toda, Itaru Oshiyama
  • Publication number: 20200304733
    Abstract: Provided is a solid-state image pickup element that includes a pixel, a light-receiving-surface-sided trench, and a light-receiving-surface-sided shielding member. A plurality of protrusions is formed on the light-receiving surface of the pixel in the solid-state image pickup element. In addition, the light-receiving-surface-sided trench is formed around the pixel having the plurality of protrusions formed, at the light-receiving surface in the solid-state image pickup element. In addition, the light-receiving-surface-sided member is buried in the light-receiving-surface-sided trench formed around the pixel having the plurality of protrusions formed on the light-receiving surface in the solid-state image pickup element. In addition, the photoelectric conversion region of a near-infrared-light pixel expands to the surface side opposed to the light-receiving surface of the photoelectric conversion region of a visible-light pixel.
    Type: Application
    Filed: June 11, 2020
    Publication date: September 24, 2020
    Inventors: HARUMI TANAKA, ITARU OSHIYAMA, SOZO YOKOGAWA
  • Patent number: 10770500
    Abstract: A solid state imaging device having a light sensing section that performs photoelectric conversion of incident light includes: an insulating layer formed on a light receiving surface of the light sensing section; a layer having negative electric charges formed on the insulating layer; and a hole accumulation layer formed on the light receiving surface of the light sensing section.
    Type: Grant
    Filed: December 21, 2018
    Date of Patent: September 8, 2020
    Assignee: Sony Corporation
    Inventors: Itaru Oshiyama, Takashi Ando, Susumu Hiyama, Tetsuji Yamaguchi, Yuko Ohgishi, Harumi Ikeda
  • Patent number: 10727261
    Abstract: The present technology relates to an image pickup device and an electronic apparatus that are configured to enhance characteristics. A solid-state image pickup device includes a photoelectric conversion section that is arranged on a semiconductor substrate and configured to photoelectrically convert an incident light, a moth-eye section that includes recesses and projections formed on a surface on a light incident side in the semiconductor substrate and has, when a cross section approximately parallel to a direction toward the photoelectric conversion section from the light incident side is viewed, a recessed portion protruding toward the side of the photoelectric conversion section, the recessed portion having a curvature or a polygonal shape, and a region that is arranged adjacent to and opposite to the photoelectric conversion section of the moth-eye section and has a refractive index different from a refractive index of the semiconductor substrate.
    Type: Grant
    Filed: January 6, 2017
    Date of Patent: July 28, 2020
    Assignee: Sony Corporation
    Inventors: Satoe Miyata, Itaru Oshiyama
  • Patent number: 10715751
    Abstract: The solid-state image pickup element includes a pixel, a light-receiving-surface-sided trench, and a light-receiving-surface-sided shielding member. A plurality of protrusions is formed on the light-receiving surface of the pixel in the solid-state image pickup element. In addition, the light-receiving-surface-sided trench is formed around the pixel having the plurality of protrusions formed, at the light-receiving surface in the solid-state image pickup element. In addition, the light-receiving-surface-sided member is buried in the light-receiving-surface-sided trench formed around the pixel having the plurality of protrusions formed on the light-receiving surface in the solid-state image pickup element. In addition, the photoelectric conversion region of a near-infrared-light pixel expands to the surface side opposed to the light-receiving surface of the photoelectric conversion region of a visible-light pixel.
    Type: Grant
    Filed: October 27, 2016
    Date of Patent: July 14, 2020
    Assignee: SONY CORPORATION
    Inventors: Harumi Tanaka, Itaru Oshiyama, Sozo Yokogawa
  • Patent number: 10536659
    Abstract: The present disclosure relates to a solid-state image capturing element, a manufacturing method therefor, and an electronic device, which are capable of controlling a thickness of a depletion layer. The solid-state image capturing element includes pixels each in which a photoelectric conversion film configured to perform photoelectric conversion on incident light and a fixed charge film configured to have a predetermined fixed charge are stacked on a semiconductor substrate. The technology of the present disclosure can be applied to, for example, back surface irradiation type solid-state image capturing elements, image capturing devices such as digital still cameras or video cameras, mobile terminal devices having an image capturing function, and electronic devices using a solid-state image capturing element as an image capturing unit.
    Type: Grant
    Filed: June 1, 2018
    Date of Patent: January 14, 2020
    Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Itaru Oshiyama, Hirotsugu Takahashi
  • Patent number: 10504953
    Abstract: The present technology relates to a solid-state imaging device, manufacturing method of a solid-state imaging device, and an electronic device, which can provide a solid-state imaging device having further improved features such as reduced optical color mixing and the like. Also, an electronic device using the solid-state imaging device thereof is provided. According to a solid-state imaging device having a substrate and multiple photoelectric converters that are formed on the substrate, an insulating film forms an embedded element separating unit. The element separating unit is configured of an insulating film having a fixed charge that is formed so as to coat the inner wall face of a groove portion, within the groove portion which is formed in the depth direction from the light input side of the substrate.
    Type: Grant
    Filed: March 7, 2019
    Date of Patent: December 10, 2019
    Assignee: Sony Corporation
    Inventors: Takeshi Yanagita, Itaru Oshiyama, Takayuki Enomoto, Harumi Ikeda, Shinichiro Izawa, Atsuhiko Yamamoto, Kazunobu Ota