Patents by Inventor Itaru Oshiyama
Itaru Oshiyama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11094728Abstract: The present technology relates to an image pickup device and an electronic apparatus that are configured to enhance characteristics. A solid-state image pickup device includes a photoelectric conversion section that is arranged on a semiconductor substrate and configured to photoelectrically convert an incident light, a moth-eye section that includes recesses and projections formed on a surface on a light incident side in the semiconductor substrate and has, when a cross section approximately parallel to a direction toward the photoelectric conversion section from the light incident side is viewed, a recessed portion protruding toward the side of the photoelectric conversion section, the recessed portion having a curvature or a polygonal shape, and a region that is arranged adjacent to and opposite to the photoelectric conversion section of the moth-eye section and has a refractive index different from a refractive index of the semiconductor substrate.Type: GrantFiled: April 22, 2019Date of Patent: August 17, 2021Assignee: SONY CORPORATIONInventors: Satoe Miyata, Itaru Oshiyama
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Publication number: 20210082982Abstract: The present technology relates to a solid-state imaging device and an electronic apparatus capable of improving sensitivity while suppressing deterioration of color mixing. The solid-state imaging device includes: a substrate; a first photoelectric conversion region that is provided in the substrate; a second photoelectric conversion region that is provided in the substrate; a trench that is provided between the first photoelectric conversion region and the second photoelectric conversion region and penetrates through the substrate; a first concave portion region that has a plurality of concave portions provided on a light receiving surface side of the substrate, above the first photoelectric conversion region; and a second concave portion region that has a plurality of concave portions provided on the light receiving surface side of the substrate, above the second photoelectric conversion region.Type: ApplicationFiled: December 28, 2018Publication date: March 18, 2021Inventor: ITARU OSHIYAMA
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Publication number: 20210043687Abstract: A solid-state imaging apparatus includes a pixel array part in which a plurality of pixels are two-dimensionally arranged, in which each pixel has a first photoelectric conversion region formed above a semiconductor layer, a second photoelectric conversion region formed in the semiconductor layer, a first filter configured to transmit a light in a predetermined wavelength region corresponding to a color component, and a second filter having different transmission characteristics from the first filter, one photoelectric conversion region out of the first photoelectric conversion region and the second photoelectric conversion region photoelectrically converts a light in a visible light region, the other photoelectric conversion region photoelectrically converts a light in an infrared region, the first filter is formed above the first photoelectric conversion region, and the second filter has transmission characteristics of making wavelengths of lights in an infrared region absorbed in the other photoelectric coType: ApplicationFiled: October 13, 2020Publication date: February 11, 2021Applicant: SONY CORPORATIONInventors: Tetsuji YAMAGUCHI, Atsushi TODA, Itaru OSHIYAMA
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Patent number: 10847581Abstract: A solid-state imaging apparatus includes a pixel array part having a plurality of pixels are two-dimensionally arranged, in which each pixel has a first photoelectric conversion region formed above a semiconductor layer, a second photoelectric conversion region formed in the semiconductor layer, a first filter configured to transmit a light in a predetermined wavelength region corresponding to a color component, and a second filter having different transmission characteristics from the first filter, one photoelectric conversion region out of the first photoelectric conversion region and the second photoelectric conversion region photoelectrically converts a light in a visible light region, the other photoelectric conversion region photoelectrically converts a light in an infrared region, the first filter is formed above the first photoelectric conversion region, and the second filter has transmission characteristics of making wavelengths of light in an infrared region absorbed in the other photoelectric conveType: GrantFiled: May 2, 2017Date of Patent: November 24, 2020Assignee: Sony CorporationInventors: Tetsuji Yamaguchi, Atsushi Toda, Itaru Oshiyama
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Publication number: 20200304733Abstract: Provided is a solid-state image pickup element that includes a pixel, a light-receiving-surface-sided trench, and a light-receiving-surface-sided shielding member. A plurality of protrusions is formed on the light-receiving surface of the pixel in the solid-state image pickup element. In addition, the light-receiving-surface-sided trench is formed around the pixel having the plurality of protrusions formed, at the light-receiving surface in the solid-state image pickup element. In addition, the light-receiving-surface-sided member is buried in the light-receiving-surface-sided trench formed around the pixel having the plurality of protrusions formed on the light-receiving surface in the solid-state image pickup element. In addition, the photoelectric conversion region of a near-infrared-light pixel expands to the surface side opposed to the light-receiving surface of the photoelectric conversion region of a visible-light pixel.Type: ApplicationFiled: June 11, 2020Publication date: September 24, 2020Inventors: HARUMI TANAKA, ITARU OSHIYAMA, SOZO YOKOGAWA
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Patent number: 10770500Abstract: A solid state imaging device having a light sensing section that performs photoelectric conversion of incident light includes: an insulating layer formed on a light receiving surface of the light sensing section; a layer having negative electric charges formed on the insulating layer; and a hole accumulation layer formed on the light receiving surface of the light sensing section.Type: GrantFiled: December 21, 2018Date of Patent: September 8, 2020Assignee: Sony CorporationInventors: Itaru Oshiyama, Takashi Ando, Susumu Hiyama, Tetsuji Yamaguchi, Yuko Ohgishi, Harumi Ikeda
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Patent number: 10727261Abstract: The present technology relates to an image pickup device and an electronic apparatus that are configured to enhance characteristics. A solid-state image pickup device includes a photoelectric conversion section that is arranged on a semiconductor substrate and configured to photoelectrically convert an incident light, a moth-eye section that includes recesses and projections formed on a surface on a light incident side in the semiconductor substrate and has, when a cross section approximately parallel to a direction toward the photoelectric conversion section from the light incident side is viewed, a recessed portion protruding toward the side of the photoelectric conversion section, the recessed portion having a curvature or a polygonal shape, and a region that is arranged adjacent to and opposite to the photoelectric conversion section of the moth-eye section and has a refractive index different from a refractive index of the semiconductor substrate.Type: GrantFiled: January 6, 2017Date of Patent: July 28, 2020Assignee: Sony CorporationInventors: Satoe Miyata, Itaru Oshiyama
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Patent number: 10715751Abstract: The solid-state image pickup element includes a pixel, a light-receiving-surface-sided trench, and a light-receiving-surface-sided shielding member. A plurality of protrusions is formed on the light-receiving surface of the pixel in the solid-state image pickup element. In addition, the light-receiving-surface-sided trench is formed around the pixel having the plurality of protrusions formed, at the light-receiving surface in the solid-state image pickup element. In addition, the light-receiving-surface-sided member is buried in the light-receiving-surface-sided trench formed around the pixel having the plurality of protrusions formed on the light-receiving surface in the solid-state image pickup element. In addition, the photoelectric conversion region of a near-infrared-light pixel expands to the surface side opposed to the light-receiving surface of the photoelectric conversion region of a visible-light pixel.Type: GrantFiled: October 27, 2016Date of Patent: July 14, 2020Assignee: SONY CORPORATIONInventors: Harumi Tanaka, Itaru Oshiyama, Sozo Yokogawa
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Patent number: 10536659Abstract: The present disclosure relates to a solid-state image capturing element, a manufacturing method therefor, and an electronic device, which are capable of controlling a thickness of a depletion layer. The solid-state image capturing element includes pixels each in which a photoelectric conversion film configured to perform photoelectric conversion on incident light and a fixed charge film configured to have a predetermined fixed charge are stacked on a semiconductor substrate. The technology of the present disclosure can be applied to, for example, back surface irradiation type solid-state image capturing elements, image capturing devices such as digital still cameras or video cameras, mobile terminal devices having an image capturing function, and electronic devices using a solid-state image capturing element as an image capturing unit.Type: GrantFiled: June 1, 2018Date of Patent: January 14, 2020Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Itaru Oshiyama, Hirotsugu Takahashi
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Patent number: 10504953Abstract: The present technology relates to a solid-state imaging device, manufacturing method of a solid-state imaging device, and an electronic device, which can provide a solid-state imaging device having further improved features such as reduced optical color mixing and the like. Also, an electronic device using the solid-state imaging device thereof is provided. According to a solid-state imaging device having a substrate and multiple photoelectric converters that are formed on the substrate, an insulating film forms an embedded element separating unit. The element separating unit is configured of an insulating film having a fixed charge that is formed so as to coat the inner wall face of a groove portion, within the groove portion which is formed in the depth direction from the light input side of the substrate.Type: GrantFiled: March 7, 2019Date of Patent: December 10, 2019Assignee: Sony CorporationInventors: Takeshi Yanagita, Itaru Oshiyama, Takayuki Enomoto, Harumi Ikeda, Shinichiro Izawa, Atsuhiko Yamamoto, Kazunobu Ota
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Patent number: 10418404Abstract: The present technology relates to a solid-state imaging device, manufacturing method of a solid-state imaging device, and an electronic device, which can provide a solid-state imaging device having further improved features such as reduced optical color mixing and the like. Also, an electronic device using the solid-state imaging device thereof is provided. According to a solid-state imaging device having a substrate and multiple photoelectric converters that are formed on the substrate, an insulating film forms an embedded element separating unit. The element separating unit is configured of an insulating film having a fixed charge that is formed so as to coat the inner wall face of a groove portion, within the groove portion which is formed in the depth direction from the light input side of the substrate.Type: GrantFiled: September 13, 2018Date of Patent: September 17, 2019Assignee: Sony CorporationInventors: Takeshi Yanagita, Itaru Oshiyama, Takayuki Enomoto, Harumi Ikeda, Shinichiro Izawa, Atsuhiko Yamamoto, Kazunobu Ota
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Publication number: 20190252424Abstract: The present technology relates to an image pickup device and an electronic apparatus that are configured to enhance characteristics. A solid-state image pickup device includes a photoelectric conversion section that is arranged on a semiconductor substrate and configured to photoelectrically convert an incident light, a moth-eye section that includes recesses and projections formed on a surface on a light incident side in the semiconductor substrate and has, when a cross section approximately parallel to a direction toward the photoelectric conversion section from the light incident side is viewed, a recessed portion protruding toward the side of the photoelectric conversion section, the recessed portion having a curvature or a polygonal shape, and a region that is arranged adjacent to and opposite to the photoelectric conversion section of the moth-eye section and has a refractive index different from a refractive index of the semiconductor substrate.Type: ApplicationFiled: April 22, 2019Publication date: August 15, 2019Applicant: SONY CORPORATIONInventors: Satoe MIYATA, Itaru OSHIYAMA
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Publication number: 20190244992Abstract: The present technology relates to an imaging element and an electronic device capable of improving sensitivity to infrared light in a back side irradiation imaging element. An imaging element is provided with a semiconductor substrate on which a photoelectric converting unit is formed, a wiring layer arranged on a side opposite to a light receiving surface of the semiconductor substrate, and provided with a wire and a reflective film, and an insulating film stacked between the semiconductor substrate and the wiring layer, in which the reflective film is arranged between the insulating film and the wire and overlaps with at least a part of the photoelectric converting unit of each pixel in a first direction in which the semiconductor substrate and the wiring layer are stacked, and a first interlayer film between the insulating film and the reflective film is thicker than the insulating film. The present technology is applicable to a back side irradiation CMOS image sensor, for example.Type: ApplicationFiled: October 13, 2017Publication date: August 8, 2019Applicant: Sony Semiconductor Solutions CorporationInventors: Sozo Yokogawa, Mikinori Ito, Itaru Oshiyama
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Patent number: 10361242Abstract: A solid-state imaging device includes a sensor including an impurity diffusion layer provided in a surface layer of a semiconductor substrate; and an oxide insulating film containing carbon, the oxide insulating film being provided on the sensor.Type: GrantFiled: December 8, 2017Date of Patent: July 23, 2019Assignee: Sony CorporationInventors: Itaru Oshiyama, Yuki Miyanami, Susumu Hiyama, Kazuki Tanaka
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Publication number: 20190206911Abstract: The present technology relates to a solid-state imaging device, manufacturing method of a solid-state imaging device, and an electronic device, which can provide a solid-state imaging device having further improved features such as reduced optical color mixing and the like. Also, an electronic device using the solid-state imaging device thereof is provided. According to a solid-state imaging device having a substrate and multiple photoelectric converters that are formed on the substrate, an insulating film forms an embedded element separating unit. The element separating unit is configured of an insulating film having a fixed charge that is formed so as to coat the inner wall face of a groove portion, within the groove portion which is formed in the depth direction from the light input side of the substrate.Type: ApplicationFiled: March 7, 2019Publication date: July 4, 2019Applicant: SONY CORPORATIONInventors: Takeshi YANAGITA, Itaru OSHIYAMA, Takayuki ENOMOTO, Harumi IKEDA, Shinichiro IZAWA, Atsuhiko YAMAMOTO, Kazunobu OTA
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Publication number: 20190206918Abstract: The present technology relates to a solid state imaging sensor that is possible to suppress the reflection of incident light with a wide wavelength band. A reflectance adjusting layer is provided on the substrate in an incident direction of the incident light with respect to the substrate such as Si and configured to adjust reflection of the incident light on the substrate. The reflectance adjusting layer includes a first layer formed on the substrate and a second layer formed on the first layer. The first layer includes a concavo-convex structure provided on the substrate and a material which is filled into a concave portion of the concavo-convex structure and has a refractive index lower than that of the substrate, and the second layer includes a material having a refractive index lower than that of the first layer. It is possible to reduce the reflection on the substrate such as Si by using the principle of the interference of the thin film. Such a technology can be applied to solid state imaging sensors.Type: ApplicationFiled: March 7, 2019Publication date: July 4, 2019Applicant: SONY CORPORATIONInventors: ITARU OSHIYAMA, HIROSHI TANAKA
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Publication number: 20190189696Abstract: A solid-state imaging apparatus includes a pixel array part having a plurality of pixels are two-dimensionally arranged, in which each pixel has a first photoelectric conversion region formed above a semiconductor layer, a second photoelectric conversion region formed in the semiconductor layer, a first filter configured to transmit a light in a predetermined wavelength region corresponding to a color component, and a second filter having different transmission characteristics from the first filter, one photoelectric conversion region out of the first photoelectric conversion region and the second photoelectric conversion region photoelectrically converts a light in a visible light region, the other photoelectric conversion region photoelectrically converts a light in an infrared region, the first filter is formed above the first photoelectric conversion region, and the second filter has transmission characteristics of making wavelengths of light in an infrared region absorbed in the other photoelectric conveType: ApplicationFiled: May 2, 2017Publication date: June 20, 2019Applicant: SONY CORPORATIONInventors: Tetsuji YAMAGUCHI, Atsushi TODA, Itaru OSHIYAMA
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Publication number: 20190158766Abstract: Mainly sensitivity for near infrared light is improved in a solid-state image pickup element with color mixture inhibited. The solid-state image pickup element includes a pixel, a light-receiving-surface-sided trench, and a light-receiving-surface-sided shielding member. A plurality of protrusions is formed on the light-receiving surface of the pixel in the solid-state image pickup element. In addition, the light-receiving-surface-sided trench is formed around the pixel having the plurality of protrusions formed, at the light-receiving surface in the solid-state image pickup element. In addition, the light-receiving-surface-sided member is buried in the light-receiving-surface-sided trench formed around the pixel having the plurality of protrusions formed on the light-receiving surface in the solid-state image pickup element.Type: ApplicationFiled: December 31, 2018Publication date: May 23, 2019Inventors: HARUMI TANAKA, ITARU OSHIYAMA, SOZO YOKOGAWA
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Publication number: 20190148444Abstract: A solid state imaging device having a light sensing section that performs photoelectric conversion of incident light includes: an insulating layer formed on a light receiving surface of the light sensing section; a layer having negative electric charges formed on the insulating layer; and a hole accumulation layer formed on the light receiving surface of the light sensing section.Type: ApplicationFiled: December 21, 2018Publication date: May 16, 2019Applicant: Sony CorporationInventors: Itaru Oshiyama, Takashi Ando, Susumu Hiyama, Tetsuji Yamaguchi, Yuko Ohgishi, Harumi Ikeda
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Patent number: 10263025Abstract: The present technology relates to a solid state imaging sensor that is possible to suppress the reflection of incident light with a wide wavelength band. A reflectance adjusting layer is provided on the substrate in an incident direction of the incident light with respect to the substrate such as Si and configured to adjust reflection of the incident light on the substrate. The reflectance adjusting layer includes a first layer formed on the substrate and a second layer formed on the first layer. The first layer includes a concavo-convex structure provided on the substrate and a material which is filled into a concave portion of the concavo-convex structure and has a refractive index lower than that of the substrate, and the second layer includes a material having a refractive index lower than that of the first layer. It is possible to reduce the reflection on the substrate such as Si by using the principle of the interference of the thin film. Such a technology can be applied to solid state imaging sensors.Type: GrantFiled: May 20, 2016Date of Patent: April 16, 2019Assignee: SONY CORPORATIONInventors: Itaru Oshiyama, Hiroshi Tanaka