Abstract: There is provided a method for producing a zeolite more excellent in moisture absorption characteristics. The method includes physically pulverizing a zeolite that has a gradient of a Na/Si value from a surface of the zeolite in a depth direction, that has a proportion of the Na/Si value at a depth of 10 nm from the surface to the Na/Si value at the surface of 90% or more, and that has a proportion of the Na/Si value at a depth of 30 nm from the surface to the Na/Si value at the surface of 70% or more, the Na/Si value representing a composition ratio between Na and Si, and crystallizing the physically pulverized zeolite.

Abstract: There is provided a method for producing a zeolite more excellent in moisture absorption characteristics. The method includes physically pulverizing a zeolite that has a gradient of a Na/Si value from a surface of the zeolite in a depth direction, that has a proportion of the Na/Si value at a depth of 10 nm from the surface to the Na/Si value at the surface of 90% or more, and that has a proportion of the Na/Si value at a depth of 30 nm from the surface to the Na/Si value at the surface of 70% or more, the Na/Si value representing a composition ratio between Na and Si, and crystallizing the physically pulverized zeolite.

Abstract: A moisture sorption film including: a film of base material; zeolite grains dispersed in the film of base material, having an average diameter of 100 nm or smaller, and having a maximum moisture sorption ratio of 10 wt % or greater. The moisture sorption film has a thickness of 500 nm or greater and contains the zeolite grains at an amount of 0.13 g/cm3 or greater.

Abstract: Provided is an optical member that has a catalyst layer formed on its optical functional surface and zinc oxide formed to have a minute uneven structure where bump structures, each of which is oriented in a C-axis and is of a bell shape or a pyramid shape, are disposed substantially periodically on a surface of the catalyst layer. Preferably, the catalyst layer contains a catalyst material mainly including at least one element selected from among palladium, platinum, gold, silver, ruthenium, and rhodium. Thus, the optical member having a minute uneven structure formed on its surface and a method for easily manufacturing such an optical member can be provided.

Abstract: An optical material is composed of a resin material and inorganic fine particles dispersed in the resin material. Each of the inorganic fine particles has a core and a shell formed so as to cover a part of a surface of the core. The core is formed of an oxide of at least one selected from Si, Ti, Zn, Al, B, Y, Mg, Ba, Ca, Sr, Ni, Cu, In, and Sn. The shell is formed of an oxide of at least one selected from Si, Ti, Zn, Al, B, Y, Mg, Ba, Ca, Sr, Ni, Cu, In, and Sn, which is different from the oxide forming the core. The particle diameter of the oxide forming the shell is smaller than the particle diameter of the oxide forming the core. The shell is formed as crystalline fine particles.

Abstract: An optical material and a method for producing the optical material, an optical element, and a hybrid optical element are provided. The optical material is composed of a resin material and inorganic fine particles dispersed in the resin material. The inorganic fine particles are fine particles formed of SiO2, and at least a part of a surface of each SiO2 fine particle is SiON obtained by substituting oxygen atoms at the surface with carbon atoms and then substituting the carbon atoms with nitrogen atoms.

Abstract: A light-emitting display device partition wall of the present invention contains at least one element selected from the group consisting of Mg, Ca, Ba, Sr, Y, La, Ce, Eu and Yb, and a concentration of the at least one element is higher on the surface side of the partition wall than on the inner portion side of the partition wall.

Abstract: A fluorescence particle 17 according to the present invention is used for a light emitting display device and is made of a fluorescent material. The fluorescent material has at least one element 18 selected from the group consisting of Al, Mg, Ca, Ba, Sr and Y. Within a range 17a from the surface 17s of the fluorescence particle through a depth of 20 nm, the at least one element 18 has a local maximum of its concentration profile in the depth direction.

Abstract: A light-emitting device according to the present invention includes: first insulators (4) arranged so as to face each other; an emitter (2) arranged between the first insulators; a second insulator (5) functioning as a base for the first insulators and the emitter; an electrode (6) arranged to face, or contact with, the first insulators partially; another electrode (10) contacting with the second insulator and interposing the second insulator between the electrode and itself; and a light-transmitting substrate (8) that faces the second insulator with the first insulators interposed somewhere and with the emitter interposed elsewhere.

Abstract: A fluorescence particle 17 according to the present invention is used for a light emitting display device and is made of a fluorescent material. The fluorescent material has at least one element 18 selected from the group consisting of Al, Mg, Ca, Ba, Sr and Y. Within a range 17a from the surface 17s of the fluorescence particle through a depth of 20 nm, the at least one element 18 has a local maximum of its concentration profile in the depth direction.

Abstract: A light-emitting device according to the present invention includes: first insulators (4) arranged so as to face each other; an emitter (2) arranged between the first insulators; a second insulator (5) functioning as a base for the first insulators and the emitter; an electrode (6) arranged to face, or contact with, the first insulators partially; another electrode (10) contacting with the second insulator and interposing the second insulator between the electrode and itself; and a light-transmitting substrate (8) that faces the second insulator with the first insulators interposed somewhere and with the emitter interposed elsewhere.

Abstract: A light-emitting element of the present invention, includes: a porous light-emitting body including an insulator having a void and an inorganic phosphor particle; and at least two electrodes provided so as to contact with a surface of the light-emitting body. A voltage is applied to the at least two electrodes so as to generate discharge, and the light-emitting body is pumped by the discharge so as to emit light. Thereby, a light-emitting element that is reduced in a deterioration of brightness and a degradation of reliability of phosphors and does not require the vacuum encapsulation and the application of a high voltage, which are required for glow discharge, and still-higher level of thin-film technology can be provided. By arranging these light-emitting elements two-dimensionally in a matrix form, a flat display device with a simple configuration can be provided at a low cost.

Abstract: A light-emitting element (1) includes a light-emitting layer (2) including a phosphor, and at least two electrodes (6, 7). The light-emitting element (1) includes at least two kinds of electrically insulating layers (2, 9) with different dielectric constants. One of the electrically insulating layers (2, 9) is the light-emitting layer (2), and one of the two electrodes (6, 7) is formed in contact with one of the insulating layers. Therefore, it is possible to provide a light-emitting element that can emit light by using surface discharge, is manufactured at low cost, exhibits favorable luminous efficiency, and is to be driven with low power consumption when being applied to a large-screen display.

Abstract: A light-emitting element of the present invention, includes: a porous light-emitting body including an insulator having a void and an inorganic phosphor particle; and at least two electrodes provided so as to contact with a surface of the light-emitting body. A voltage is applied to the at least two electrodes so as to generate discharge, and the light-emitting body is pumped by the discharge so as to emit light. Thereby, a light-emitting element that is reduced in a deterioration of brightness and a degradation of reliability of phosphors and does not require the vacuum encapsulation and the application of a high voltage, which are required for glow discharge, and still-higher level of thin-film technology can be provided. By arranging these light-emitting elements two-dimensionally in a matrix form, a flat display device with a simple configuration can be provided at a low cost.

Abstract: The electronic component of the present invention includes: an element having an internal electrode therein; an external electrode formed on an end portion of the element where an end face of the internal electrode is exposed; and a protection layer formed on the entire surface of the element except for the end portion of the element, wherein the protection layer is made of a metal oxide.

Abstract: The electronic component of the present invention includes: an element having an internal electrode therein; an external electrode formed on an end portion of the element where an end face of the internal electrode is exposed; and a protection layer formed on the entire surface of the element except for the end portion of the element, wherein the protection layer is made of a metal oxide.

Abstract: The electronic component of the present invention includes: an element having an internal electrode therein; an external electrode formed on an end portion of the element where an end face of the internal electrode is exposed; and a protection layer formed on the entire surface of the element except for the end portion of the element, wherein the protection layer is made of a metal oxide.

Abstract: The present invention relates to a method for manufacture of ceramic parts used for protecting semiconductor devices such as IC, LSI, etc. against anomalous high voltages such as noise, pulse, static electricity, etc. and the object of the present invention is to provide ceramic parts capable of removing or restraining high-frequency noises on signal lines by reducing the impedance of the devices.In order to attain the above object, according to the present invention, a pulse voltage of 50 kV in maximum value which requires a time of 200 nanoseconds or less for reaching the maximum value from an initial value and a time of 1 microsecond or less for returning to the initial value through the maximum value and which has an energy of 0.5 joule or lower is applied at least once between the electrodes (2).

Abstract: A method for manufacturing semiconductor-type laminated ceramic capacitors with a grain boundary-insulated structure including the steps of calcinating starting material of mixed powder in air or in nitrogen atmosphere after grinding, mixing and drying the mixed powder; forming raw sheets; printing a pattern of inner electrode paste on the surface of the raw sheets; calcinating the laminated body in air; sintering the laminated raw sheets in reducing atmosphere or in nitrogen atmosphere after calcination; re-oxidizing in air after sintering; and covering the edges of sintered ceramic sheets with outer electrode paste and baking after re-oxidation, terminals of inner electrodes being exposed to the edges, wherein: the starting material of mixed powder comprises a material of the composition Sr.sub.(1-x) Ba.sub.x TiO.sub.3 containing excess Ti to make a final molecular ratio of Ti to Sr.sub.(1-x) Ba.sub.x in the range of 0.95.ltoreq. Sr.sub.(1-x)Ba.sub.x /Ti< 1.00 (where x is in the range of 0< x.ltoreq.

Abstract: The present invention provides a semiconductor-type laminated ceramic capacitor with a grain boundary-insulated structure made of Sr.sub.(1-x) Ca.sub.x TiO.sub.3 as a main component, comprising the functions of a conventional capacitor which absorbs low voltage noises and high frequency noises, and a varistor when high voltage noises and electrostatic charges invade, wherein simultaneous sintering of the materials of ceramic capacitor together with the materials of inner electrodes was made possible in the manufacturing process. Besides, material to be made semiconductive is added to the main component of Sr.sub.(1-x) Ca.sub.x TiO.sub.3 excess in Ti, the materials of Mn-Si, which are converted to MnO.sub.2 and SiO.sub.2 in the sintering process, are also added to the main component.