Abstract: There is provided an LC resonance type oscillation circuit with a wide frequency variable range with a small variation of Q and capable of reducing a chip size due to no external parts required, and a communication semiconductor circuit device (high-frequency IC) having the oscillation circuit. In the LC resonance type oscillation circuit, a capacitance element and a switch element are connected in parallel between both terminals of a secondary side inductance element which is placed facing an inductance element constituting the LC resonance circuit and is connected by mutual induction to the inductance element. It is designed so that an equivalent inductance increases as the capacitance element is connected between the both terminals of the secondary side inductance element in a state where the switch element is turned OFF, and that the equivalent inductance decreases as the both terminals of the secondary side inductance element are short-circuited in a state where the switch element is turned ON.

Abstract: This invention can permanently in the future develop minds and personalities of creatures which were considered in the past to decay and become extinct owing to ageing and death, by transferring minds and personalities of creatures to new clone bodies, with preserving self-identity. This invention is particularly valid in the case that an invalid has little chance of recovery due to serious multiple organ failures, in the case that general prostration or severe senility of the whole body makes urgent organ exchanges ineffective, in the case that it will not be long before an individual moves to new clone bodies on some other grounds, etc. My invention is the repetitive processes of transferring central nervous systems and other systems of individuals and old clone bodies to new clone bodies.

Abstract: In a VTR signal processing circuit, a first reproduced color under signal and a second reproduced color under signal obtained by delaying by one or two horizontal period in synchronism with a predetermined clock signal are supplied to the first and second frequency converter circuits 1 and 2 respectively, a frequency signal having frequency 2n times that of a carrier used in frequency conversion for converting a frequency of the reproduced color under signal into a frequency corresponding to a standard color signal is produced by an oscillator circuit, this oscillation frequency is divided such that it becomes the above mentioned carrier frequency, four carriers having phases 0 degree, 90 degrees, 180 degrees, and 270 degrees respectively are produced, the four carriers are selectively output and supplied to the first and second frequency converter circuits 1 and 2 such that an output signal of the first frequency converter circuit 1 and an output signal of the second frequency converter circuit 2 become in p

Abstract: A plasma processing method in which a high-frequency power is supplied to a processing chamber in which an object to be processed is mounted, thereby producing a plasma in the processing chamber, and the object is processed in an atmosphere of the plasma, wherein the high-frequency power is subjected to modulation by a low-frequency power. In one embodiment a plasma is produced in a processing chamber by using an electric power with a direction of current changed with passing of time, and the object to be processed is processed in an atmosphere of the plasma, wherein a power having a basic frequency is subjected to frequency modulation with a frequency equal to n-times (n=an integer) the basic frequency. In a plasma processing apparatus of the invention, while a process gas is supplied to a processing chamber via a first gas introducing hole formed in an electrode, an object to be processed, which is held on an opposed electrode, is subjected to plasma processing.

Abstract: A method of plasma-processing which includes the step of plasma-processing a matter mounted on a component in a plasma processing vessel by using plasma gases, and the step of introducing an inactive gas into the plasma processing vessel when no plasma process is conducted in the vessel and gases resulted from the previous plasma process remain therein.

Abstract: A plasma etching apparatus for a semiconductor wafer includes a susceptor arranged in a vacuum process chamber. A groove for flowing a heat transfer gas is formed in the mounting surface of the susceptor. The groove includes an annular groove portion formed along the peripheral edge of the mounting surface, and a gas path vertically extending through the susceptor is connected to the annular groove portion. A sheet-like electrostatic chuck is airtightly adhered to the mounting surface of the susceptor to cover the groove. A plurality of through holes are formed in the electrostatic chuck, and these holes are arranged along an above the groove. The heat transfer gas is supplied between the electrostatic chuck and the semiconductor wafer through the gas path, the groove, and the through holes. The heat transfer gas contributes to transfer of cold from a liquid nitrogen source arranged under the susceptor to the wafer.

Abstract: A processing method includes the steps of placing an object to be processed on a susceptor arranged in a hermetic container, preliminarily introducing a small amount of heat transfer medium gas to a gap between the object to be processed and the susceptor while evacuating the gap, introducing the heat transfer medium gas to the gap until a pressure thereof reaches a predetermined value while controlling the pressure thereof by controlling an evacuation amount from the gap, and processing the object to be processed.

Abstract: A substrate processing apparatus comprising a housing section for housing substrates to be processed, a first chamber for performing anisotropic etching treatment, conveyor means for conveying the substrates from the housing section to the first chamber, and a second chamber for performing at least one of isotropic etching treatment and ashing treatment with respect to a substrate which has been subjected to the anisotropic etching treatment in the first chamber. And a method of processing substrates, comprising the steps of performing anisotropic etching treatment in a first chamber with respect to the substrates, and performing at least one of isotropic etching treatment and ashing treatment in a second chamber with respect to the substrates which have been subjected to the anisotropic etching treatment in the first chamber and have been kept unexposed to the atmosphere, the isotropic etching treatment and the ashing treatment being performed simultaneously or in succession.

Abstract: An etching method comprises the steps of setting a substrate to be processed above the surface of a first electrode opposed to a second electrode within a vacuum container, with a clearance formed between the surface of the first electrode and the substrate, supplying a cooling gas to the electrodes with a predetermined flow rate and a pressure, supplying a process gas into the vacuum container, changing the process gas to a plasma, by applying a predetermined electric power across the electrodes, and etching the substrate by means of the plasma of the process gas.

Abstract: An exhaust manifold system is provided for a transverse V-type engine including front and rear banks, each having a plurality of cylinders. The exhaust manifold system includes a front exhaust manifold for conducting the exhaust gas discharged from the cylinders of the front bank to an exhaust pipe, and a rear exhaust manifold for conducting the exhaust gas discharged from the cylinders of the rear bank to the exhaust pipe. This exhaust manifold system may be produced by welding stainless steel pipes for the front exhaust manifold and forming the rear exhaust manifold of cast iron.

Abstract: A plasma etching method including the steps of mounting an object to be processed in a region formed between one electrode and an other electrode, introducing an etching gas into the region, setting an area of the contact surface of the other electrode, which is in contact with the etching gas, to a predetermined value in accordance with a predetermined selection ratio used in etching the object, generating plasma of the etching gas by applying a predetermined electric power between the electrodes after setting the area of the contact surface of the other electrode, which is in contact with the etching gas, to the predetermined value, and etching the object by the plasma.

Abstract: A plasma processing device intended to plasma-process a wafer which is mounted on a mount in the plasma process vessel and clamped at the peripheral rim thereof between a clamping member and the mount. The wafer thus processed can be then handled when it is released from its clamped state. A plate spring is housed like a cantilever in a part of that portion of the clamping member which clamps the wafer relative to the mount, and a free end of the plate spring is projected from a recess which is formed on the underside of the clamping member to house the free end. When the wafer is clamped between the clamping member and the mount, the free end is housed in the recess, but when the wafer is released from its clamped state, the free end is projected from the recess to separate it from the clamping member. The wafer can therefore be left on the mount without adhering to the clamping member.

Abstract: An etching apparatus has a method for stopping the generation of plasma responsive to the detection of poor cooling of a block electrode, which is provided with an electrode, to prevent the electrode from being cracked because of the thermal expansion of both electrodes so as to reduce the times of electrode exchange. The present invention also provides an etching method including a process of controlling the flow rate and pressure of a cooling gas supplied to a clearance between a substrate to be processed and a block electrode on which the substrate is mounted, so as to enable uniform etching to be applied to the substrate.

Abstract: A mounting surface of an electrode for mounting an object to be processed thereon is projected to be a curved surface identical to a curved surface obtained by deforming the object to be processed by a uniform load, and etching of the object to be processed is performed. Etching of the object to be processed can be easily and stably performed, thereby improving yield and productivity.

Abstract: A method is disclosed for feeding a constant amount of filter cake to a dryer thereby producing dried powder having a predetermined moisture content so that materials of uniform quality are fed at a constant rate to the stages subsequent to the dryer in a pelletizing system of the iron and steel industry.

Abstract: A method and apparatus is disclosed for maintaining the uniformity of a mixed dust slurry stored in a basin, the mixture comprising blast furnace dust slurry, steel furnace dust slurry (defined in the specification) and, if necessary, dry dust or filtrated cake and having a relatively high concentration -- 32% by weight or more -- of solids. The mixture in the storage basin is stirred or agitated by injecting gas or the liquid to be used in the mixture itself into the basin. The method and apparatus are utilized as a part of a system for manufacturing reduced pellets from the dust discharged in an iron foundry or steel mill.