Abstract: The interior of a vacuum chamber is maintained at a specified pressure by introducing a specified gas into the vacuum chamber having a plasma trap provided therein. Simultaneously, therewith, evacuation of the chamber is performed by a pump as an evacuating device, and a high-frequency power of 100 MHz is supplied to a counter electrode by counter-electrode use high-frequency power supply. Thus, uniform plasma is generated within the vacuum chamber, where plasma processing such as etching, deposition, and surface reforming can be carried out uniformly with a substrate placed on a substrate electrode.

Abstract: A plasma processing apparatus including a vacuum chamber, a gas supply unit for supplying gas into the vacuum chamber, an exhausting unit for exhausting the interior of the vacuum chamber, a pressure-regulating valve for controlling the interior of the vacuum chamber to a specified pressure, a substrate electrode for placing thereon a substrate within the vacuum chamber, an antenna provided opposite to the substrate electrode, and a high-frequency power supply capable of supplying to the antenna a high-frequency power having a frequency of 50 MHz to 3 GHz. The plasma processing apparatus also has a dielectric plate sandwiched between the antenna and an inner surface of the vacuum chamber, an antenna cover for covering side surfaces of the antenna and the dielectric plate and a substrate-facing surface of the antenna, a slit cover for covering an exposed surface of the substrate-facing inner surface of the vacuum chamber and fixing the antenna cover to a wall surface of the vacuum chamber.

Abstract: Provided is a membrane with bumps whose variations in shape are minimized to a least extent and which are capable of supporting a micro electrical circuit. The membrane with bumps includes: a plurality of bumps, each of which is made up of a probe and an electrode, with the probe having a diameter which becomes smaller from one end toward another end of the probe, and with the electrode having a diameter which is larger than the diameter of the one end of the probe; and an insulating base where the bumps are positioned at predetermined locations so that the bumps are insulated from each other, wherein the probe is positioned, penetrating the insulating base in a thickness direction, and a metal film is placed between the electrode and the insulating base.

Abstract: Provided is membrane with bumps whose variations in shape are minimized to the least and which are capable of supporting a micro electrical circuit. A membrane with bumps includes: a plurality of bumps, each of which is made up of a probe and an electrode, the probe having a diameter which becomes smaller from one end toward the other end of the probe, and the electrode having a diameter which is larger than the diameter of the one end of the probe; and an insulating base where the bumps are positioned at predetermined locations so that the bumps are insulated from each other, wherein the probe is positioned, penetrating the insulating base in a thickness direction, and a metal film is placed in between the electrode and the insulating base.

Abstract: A plasma processing method for generating plasma in a vacuum chamber and processing a substrate placed on a substrate electrode, the plasma being generated by supplying a high-frequency power having a frequency of 50 MHz to 3 GHz to an antenna provided opposite to the substrate electrode while interior of the vacuum chamber is controlled to a specified pressure by supplying a gas into the vacuum chamber and exhausting the interior of the vacuum chamber, the method includes with a dielectric plate being sandwiched between the antenna and the vacuum chamber and both the antenna and the dielectric plate projecting into the vacuum chamber, controlling plasma distribution on the substrate with an annular and recessed slit provided between the antenna and the vacuum chamber, and processing the substrate in a state where the antenna cover is fixed by making both an inner side face of the slit and the antenna covered with an antenna cover, making a bottom face of the slit covered with a slit cover, supporting the ant

Abstract: A plasma processing method includes introducing a gas into a vacuum chamber through a hole of a dielectric tube attached to a metal body fixed to the vacuum chamber while exhausting from the vacuum chamber to keep the vacuum chamber within a specified pressure. High-frequency power with a frequency ranging from 100 kHz to 3 GHz is applied to a plasma source provided so as to face a substrate mounted on a substrate electrode in the vacuum chamber to generate plasma in the vacuum chamber to perform plasma processing of the substrate.

Abstract: The interior of a vacuum chamber is maintained at a specified pressure by introducing a specified gas into the vacuum chamber having a plasma trap provided therein. Simultaneously, therewith, evacuation of the chamber is performed by a pump as an evacuating device, and a high-frequency power of 100 MHz is supplied to a counter electrode by counter-electrode use high-frequency power supply. Thus, uniform plasma is generated within the vacuum chamber, where plasma processing such as etching, deposition, and surface reforming can be carried out uniformly with a substrate placed on a substrate electrode.

Abstract: A plasma processing method for generating plasma in a vacuum chamber and processing a substrate placed on a substrate electrode, the plasma being generated by supplying a high-frequency power having a frequency of 50 MHz to 3 GHz to an antenna provided opposite to the substrate electrode while interior of the vacuum chamber is controlled to a specified pressure by supplying a gas into the vacuum chamber and exhausting the interior of the vacuum chamber, the method includes with a dielectric plate being sandwiched between the antenna and the vacuum chamber and both the antenna and the dielectric plate projecting into the vacuum chamber, controlling plasma distribution on the substrate with an annular and recessed slit provided between the antenna and the vacuum chamber, and processing the substrate in a state where the antenna cover is fixed by making both an inner side face of the slit and the antenna covered with an antenna cover, making a bottom face of the slit covered with a slit cover, supporting the ant

Abstract: The interior of a vacuum chamber is maintained at a specified pressure by introducing a specified gas into the vacuum chamber having a plasma trap provided therein. Simultaneously, therewith, evacuation of the chamber is performed by a pump as an evacuating device, and a high-frequency power of 100 MHz is supplied to a counter electrode by counter electrode use high-frequency power supply. Thus, uniform plasma is generated within the vacuum chamber, where plasma processing such as etching, deposition, and surface reforming can be carried out uniformly with a substrate placed on a substrate electrode.

Abstract: A plasma processing apparatus includes a vacuum chamber for evacuating gas therefrom, for introducing reaction gas therein, and for generating plasma therein through high frequency power application. A substrate hold stage is set in the vacuum chamber, with the substrate hold stage including a set face having a recessed part, wherein a rear face of a substrate to be subjected to plasma processing is held on the set face.

Abstract: A substrate detection sensor is operatively connected to a door moving mechanism for opening/closing a front door with respect to a sealed container accommodating therein a plurality of substrates. The substrate detection sensor enters the sealed container and detects the substrates successively as it is lowered integrally with the front door, and retracts from the sealed container when all of the substrates have been detected.

Abstract: A plasma processing method for generating plasma in a vacuum chamber and processing a substrate placed on a substrate electrode, the plasma being generated by supplying a high-frequency power having a frequency of 50 MHz to 3 GHz to an antenna provided opposite to the substrate electrode while interior of the vacuum chamber is controlled to a specified pressure by supplying a gas into the vacuum chamber and exhausting the interior of the vacuum chamber, the method includes with a dielectric plate being sandwiched between the antenna and the vacuum chamber and both the antenna and the dielectric plate projecting into the vacuum chamber, controlling plasma distribution on the substrate with an annular and recessed slit provided between the antenna and the vacuum chamber, and processing the substrate in a state where the antenna cover is fixed by making both an inner side face of the slit and the antenna covered with an antenna cover, making a bottom face of the slit covered with a slit cover, supporting the ant

Abstract: It is the object of the invention to provide a substrate dechucking device and a substrate dechucking method for safely dechucking from a substrate holder a substrate which is being held in the substrate holder.

Abstract: A plasma processing method includes introducing a gas into a vacuum chamber through a hole of a dielectric tube attached to a metal body fixed to the vacuum chamber while exhausting from the vacuum chamber to keep the vacuum chamber within a specified pressure, and applying high-frequency power with a frequency ranging from 100 kHz to 3 GHz to a plasma source provided so as to face a substrate mounted on a substrate electrode in the vacuum chamber to generate plasmas in the vacuum chamber to perform plasma processing of the substrate.

Abstract: While interior of a vacuum chamber is maintained to a specified pressure by introducing a specified gas from a gas supply unit into the vacuum chamber and simultaneously performing exhaustion by a pump as an exhauster, a high-frequency power of 100 MHz is supplied by an antenna use high-frequency power supply to an antenna provided so as to project into the vacuum chamber, by which plasma is generated in the vacuum chamber. The vacuum chamber grounded, and separated into a region on one side on which the substrate is present and a region on the other side on which the substrate is absent by a punching metal plate nearly all the peripheral portion of which is grounded.

Abstract: Objects of the present invention are to prolong the life of a sealing portion by using bellows and to prevent the generation of dust and the effect thereof. A support member for positioning is extended to the outside through an opening of a vacuum vessel and bellows connected to the circumference of the opening with a play such that positioning movement can be performed without being in contact with the opening and the bellows, and the support member is received by roller bearings in a bulkhead portion connected to a free end of the bellows and closing the bellows of a bearing support. Necessary rotation is given to the support member from outside via inside and outside magnetic couplings facing each other on the inside and outside of the bulkhead portion, and movement in the X direction perpendicular to the axis is given to the support member from outside by moving the bearing support in the direction perpendicular to the axis with respect to the vacuum vessel.

Abstract: An upper arm 4 and a lower arm 6 of a parallel link system that perform extension and retraction action in the same direction without mutual interference are arranged within a vacuum enclosure 1. Three magnetic couplings are arranged coaxially at three levels, through which extension/retraction action and swivel action of upper and lower arms are effected. Using a cam box having three output shafts driven by a single input shaft to which an arm drive motor is connected, extension/retraction drive and Z axis drive of upper and lower arms are performed, while swiveling action of upper and lower arms is driven by a swivel motor.

Abstract: A substrate detection sensor is operatively connected to a door moving mechanism for opening/closing a front door with respect to a sealed container accommodating therein a plurality of substrates. The substrate detection sensor enters the sealed container and detects the substrates successively as it is lowered integrally with the front door, and retracts from the sealed container when all of the substrates have been detected.

Abstract: Data related to an attractive force between a substrate holder 3 and a substrate 2 is detected when pushing up and releasing the substrate 2 from the substrate holder 3, and when the attractive force is detected to be greater than a predetermined value, the push-up operation is regulated by a controller 18.

Abstract: In processing the surface of a substrate 2 that is held with its under-surface in contact with a substrate holder 3 in a vacuum chamber 1, the temperature of substrate 2 is controlled by supplying a heat-conductive gas between the substrate 2 and substrate holder 3. Supply and evacuation of the heat-conductive gas are effected rapidly at high flow rate from both supply line 18 and evacuation line 19 using bypass lines 17a, 17b, while pressure regulation is effected with a low flow rate.