Abstract: A dry etching apparatus includes a first electrode provided with means for controlling a temperature of a to-be-etched member, a second electrode disposed facing in parallel to the first electrode, a vacuum container housing the first and second electrodes therein, a device for feeding etching gas into the vacuum container, and a device for impressing a high frequency power between the first and second electrodes. A surface of the first electrode to be in touch with both the to-be-etched member and the etching gas and to which the high frequency power is impressed is coated with an insulating film of volume resistivity .rho. within a range: 1.times.10.sup.8 .OMEGA.cm.ltoreq..rho.<1.times.10.sup.9 .OMEGA.cm.